CN104488071B - 基板处理装置以及器件制造方法 - Google Patents

基板处理装置以及器件制造方法 Download PDF

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Publication number
CN104488071B
CN104488071B CN201380038134.6A CN201380038134A CN104488071B CN 104488071 B CN104488071 B CN 104488071B CN 201380038134 A CN201380038134 A CN 201380038134A CN 104488071 B CN104488071 B CN 104488071B
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substrate
functional layer
pattern
lyophily
lyophobicity
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CN104488071A (zh
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奈良圭
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Nikon Corp
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Nikon Corp
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02554Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Spray Control Apparatus (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Nozzles (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Special Spraying Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN201380038134.6A 2012-05-24 2013-05-23 基板处理装置以及器件制造方法 Active CN104488071B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710368364.9A CN107256824A (zh) 2012-05-24 2013-05-23 器件制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-118617 2012-05-24
JP2012118617 2012-05-24
PCT/JP2013/064381 WO2013176222A1 (ja) 2012-05-24 2013-05-23 基板処理装置、及びデバイス製造方法

Related Child Applications (1)

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CN201710368364.9A Division CN107256824A (zh) 2012-05-24 2013-05-23 器件制造方法

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CN104488071A CN104488071A (zh) 2015-04-01
CN104488071B true CN104488071B (zh) 2017-10-13

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JP (6) JP6264285B2 (ko)
KR (5) KR102057813B1 (ko)
CN (2) CN104488071B (ko)
WO (1) WO2013176222A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102057813B1 (ko) * 2012-05-24 2019-12-19 가부시키가이샤 니콘 미스트 성막장치
TWI762439B (zh) * 2015-02-18 2022-05-01 日商尼康股份有限公司 薄膜製造裝置、及薄膜製造方法
KR101653347B1 (ko) * 2015-11-27 2016-09-01 한국기계연구원 유연기판에 코팅용 용액을 코팅하는 장치
JP6666779B2 (ja) * 2016-04-11 2020-03-18 株式会社小森コーポレーション 電子デバイス製造装置
CN109414718A (zh) * 2016-07-11 2019-03-01 东芝三菱电机产业***株式会社 雾滴涂布成膜装置及雾滴涂布成膜方法
CN106827786B (zh) * 2017-02-16 2019-04-05 中国科学技术大学 一种非接触式连续辊动装置
CN111491746B (zh) 2017-12-22 2022-04-29 富士胶片株式会社 成膜方法
WO2019234917A1 (ja) * 2018-06-08 2019-12-12 東芝三菱電機産業システム株式会社 成膜装置
CN112752616B (zh) 2018-08-01 2023-07-14 株式会社尼康 雾发生装置以及雾成膜方法和雾成膜装置
JP7293955B2 (ja) * 2019-08-01 2023-06-20 凸版印刷株式会社 パターン形成方法およびパターン形成装置
CN110588186B (zh) * 2019-08-07 2020-07-10 华中科技大学 一种喷墨打印柔性显示器件制造***及方法
JP7446854B2 (ja) * 2020-03-02 2024-03-11 住友重機械工業株式会社 インク塗布装置、インク塗布装置の制御装置、及びインク塗布方法
JP2023100212A (ja) * 2022-01-05 2023-07-18 信越化学工業株式会社 成膜装置および成膜方法
CN217181402U (zh) * 2022-01-14 2022-08-12 宁德时代新能源科技股份有限公司 一种基材处理的设备
WO2023234118A1 (ja) * 2022-06-03 2023-12-07 東洋紡株式会社 光電変換素子及びその製造方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0298955A (ja) * 1988-10-06 1990-04-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2743566B2 (ja) * 1990-09-21 1998-04-22 日立電線株式会社 エッチングにより微細パターンを形成する方法
JP3286002B2 (ja) * 1993-03-25 2002-05-27 オリンパス光学工業株式会社 薄膜形成装置
JP3879312B2 (ja) * 1999-03-31 2007-02-14 セイコーエプソン株式会社 膜の形成方法、及びデバイスの製造方法
US6304999B1 (en) * 2000-10-23 2001-10-16 Advanced Micro Devices, Inc. Method and apparatus for embedded process control framework in tool systems
JP2002356780A (ja) * 2001-05-30 2002-12-13 Sekisui Chem Co Ltd 常圧プラズマ処理法における膜厚制御方法
JP2003077782A (ja) * 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP2003257866A (ja) * 2002-03-05 2003-09-12 Nippon Soda Co Ltd 薄膜パターンの製造方法
JP3951044B2 (ja) * 2002-03-13 2007-08-01 セイコーエプソン株式会社 成膜方法、並びにその方法を用いて製造したデバイス
JP2003290709A (ja) * 2002-03-29 2003-10-14 Fuji Photo Film Co Ltd マット形成装置及び平版印刷版の製造方法
JP4014142B2 (ja) * 2002-05-02 2007-11-28 独立行政法人科学技術振興機構 光分解性シランカップリング剤
JP2004076076A (ja) * 2002-08-14 2004-03-11 Konica Minolta Holdings Inc 大気圧プラズマ処理装置及び大気圧プラズマ処理方法
JP4892973B2 (ja) * 2003-02-18 2012-03-07 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ素子の製造方法
JP4244686B2 (ja) * 2003-04-18 2009-03-25 セイコーエプソン株式会社 パターン形成方法
JP3941066B2 (ja) * 2003-09-11 2007-07-04 俊次 村野 ライン状均一吐出装置、霧化装置、薄膜形成装置、パターン形成装置、三次元造形装置および洗浄装置。
JP4387775B2 (ja) * 2003-11-25 2009-12-24 株式会社リコー 有機薄膜の形成方法及びその形成装置
JP5124760B2 (ja) * 2004-04-19 2013-01-23 静雄 藤田 成膜方法及び成膜装置
JP4946860B2 (ja) * 2005-02-17 2012-06-06 コニカミノルタホールディングス株式会社 ガスバリアフィルム及びその製造方法、並びに該ガスバリアフィルムを用いた、有機el素子用樹脂基材、有機el素子
JP2006253216A (ja) * 2005-03-08 2006-09-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007206552A (ja) * 2006-02-03 2007-08-16 Asahi Glass Co Ltd 光処理基材の製造方法
JP2008050321A (ja) * 2006-08-28 2008-03-06 Univ Kanagawa 光分解性カップリング剤
JP2008094647A (ja) * 2006-10-10 2008-04-24 Fujikura Ltd 成膜装置
JP5177617B2 (ja) * 2006-12-25 2013-04-03 独立行政法人産業技術総合研究所 酸化シリコン薄膜形成装置
WO2008129819A1 (ja) 2007-04-13 2008-10-30 Nikon Corporation 表示素子の製造方法、表示素子の製造装置、及び表示素子
JP4637872B2 (ja) * 2007-06-12 2011-02-23 シャープ株式会社 配線構造およびその製造方法
JPWO2009031423A1 (ja) * 2007-09-03 2010-12-09 コニカミノルタホールディングス株式会社 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ
JP2009065012A (ja) * 2007-09-07 2009-03-26 Konica Minolta Holdings Inc 薄膜トランジスタ
KR20110028473A (ko) * 2008-06-30 2011-03-18 가부시키가이샤 니콘 표시 소자의 제조 방법 및 제조 장치, 박막 트랜지스터의 제조 방법 및 제조 장치, 및 회로 형성 장치
JP2010258206A (ja) * 2009-04-24 2010-11-11 Konica Minolta Holdings Inc 金属酸化物半導体の製造方法、金属酸化物半導体及びこれを用いた半導体素子、薄膜トランジスタ
JP5534552B2 (ja) * 2009-05-20 2014-07-02 株式会社ニコン パターン形成装置、パターン形成方法、デバイス製造装置、及びデバイス製造方法
JP5360571B2 (ja) * 2009-08-12 2013-12-04 株式会社ニコン 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム
WO2011102053A1 (ja) * 2010-02-18 2011-08-25 富士電機ホールディングス株式会社 成膜装置及び成膜方法、並びに薄膜太陽電池の製造装置及び製造方法
JP2011181591A (ja) * 2010-02-26 2011-09-15 Sumitomo Chemical Co Ltd 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法
CN102782580B (zh) * 2010-02-26 2015-04-22 株式会社尼康 图案形成方法
JP5273074B2 (ja) * 2010-03-19 2013-08-28 コニカミノルタ株式会社 バリアフィルムの製造方法
WO2011126132A1 (ja) * 2010-04-09 2011-10-13 株式会社ニコン 基板処理装置
JP5573521B2 (ja) * 2010-09-09 2014-08-20 セイコーエプソン株式会社 液体吐出装置及び液体吐出方法
KR102057813B1 (ko) * 2012-05-24 2019-12-19 가부시키가이샤 니콘 미스트 성막장치

Also Published As

Publication number Publication date
KR101967589B1 (ko) 2019-04-09
WO2013176222A1 (ja) 2013-11-28
CN107256824A (zh) 2017-10-17
CN104488071A (zh) 2015-04-01
JP2020074411A (ja) 2020-05-14
JP2019023354A (ja) 2019-02-14
JP6424940B2 (ja) 2018-11-21
KR102314386B1 (ko) 2021-10-19
JP6428896B2 (ja) 2018-11-28
KR101823728B1 (ko) 2018-01-30
JP6264285B2 (ja) 2018-01-24
KR20190039609A (ko) 2019-04-12
JP2018067717A (ja) 2018-04-26
JP6638792B2 (ja) 2020-01-29
KR20180006489A (ko) 2018-01-17
JP2018076591A (ja) 2018-05-17
KR102057813B1 (ko) 2019-12-19
KR20200105981A (ko) 2020-09-09
KR20150016947A (ko) 2015-02-13
JP7222416B2 (ja) 2023-02-15
JPWO2013176222A1 (ja) 2016-01-14
JP2022020691A (ja) 2022-02-01
KR20190141027A (ko) 2019-12-20

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