CN104488071B - 基板处理装置以及器件制造方法 - Google Patents
基板处理装置以及器件制造方法 Download PDFInfo
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- CN104488071B CN104488071B CN201380038134.6A CN201380038134A CN104488071B CN 104488071 B CN104488071 B CN 104488071B CN 201380038134 A CN201380038134 A CN 201380038134A CN 104488071 B CN104488071 B CN 104488071B
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Classifications
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Spray Control Apparatus (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Nozzles (AREA)
- Electroluminescent Light Sources (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Special Spraying Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710368364.9A CN107256824A (zh) | 2012-05-24 | 2013-05-23 | 器件制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-118617 | 2012-05-24 | ||
JP2012118617 | 2012-05-24 | ||
PCT/JP2013/064381 WO2013176222A1 (ja) | 2012-05-24 | 2013-05-23 | 基板処理装置、及びデバイス製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710368364.9A Division CN107256824A (zh) | 2012-05-24 | 2013-05-23 | 器件制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN104488071A CN104488071A (zh) | 2015-04-01 |
CN104488071B true CN104488071B (zh) | 2017-10-13 |
Family
ID=49623903
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201380038134.6A Active CN104488071B (zh) | 2012-05-24 | 2013-05-23 | 基板处理装置以及器件制造方法 |
CN201710368364.9A Pending CN107256824A (zh) | 2012-05-24 | 2013-05-23 | 器件制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710368364.9A Pending CN107256824A (zh) | 2012-05-24 | 2013-05-23 | 器件制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (6) | JP6264285B2 (ko) |
KR (5) | KR102057813B1 (ko) |
CN (2) | CN104488071B (ko) |
WO (1) | WO2013176222A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102057813B1 (ko) * | 2012-05-24 | 2019-12-19 | 가부시키가이샤 니콘 | 미스트 성막장치 |
TWI762439B (zh) * | 2015-02-18 | 2022-05-01 | 日商尼康股份有限公司 | 薄膜製造裝置、及薄膜製造方法 |
KR101653347B1 (ko) * | 2015-11-27 | 2016-09-01 | 한국기계연구원 | 유연기판에 코팅용 용액을 코팅하는 장치 |
JP6666779B2 (ja) * | 2016-04-11 | 2020-03-18 | 株式会社小森コーポレーション | 電子デバイス製造装置 |
CN109414718A (zh) * | 2016-07-11 | 2019-03-01 | 东芝三菱电机产业***株式会社 | 雾滴涂布成膜装置及雾滴涂布成膜方法 |
CN106827786B (zh) * | 2017-02-16 | 2019-04-05 | 中国科学技术大学 | 一种非接触式连续辊动装置 |
CN111491746B (zh) | 2017-12-22 | 2022-04-29 | 富士胶片株式会社 | 成膜方法 |
WO2019234917A1 (ja) * | 2018-06-08 | 2019-12-12 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
CN112752616B (zh) | 2018-08-01 | 2023-07-14 | 株式会社尼康 | 雾发生装置以及雾成膜方法和雾成膜装置 |
JP7293955B2 (ja) * | 2019-08-01 | 2023-06-20 | 凸版印刷株式会社 | パターン形成方法およびパターン形成装置 |
CN110588186B (zh) * | 2019-08-07 | 2020-07-10 | 华中科技大学 | 一种喷墨打印柔性显示器件制造***及方法 |
JP7446854B2 (ja) * | 2020-03-02 | 2024-03-11 | 住友重機械工業株式会社 | インク塗布装置、インク塗布装置の制御装置、及びインク塗布方法 |
JP2023100212A (ja) * | 2022-01-05 | 2023-07-18 | 信越化学工業株式会社 | 成膜装置および成膜方法 |
CN217181402U (zh) * | 2022-01-14 | 2022-08-12 | 宁德时代新能源科技股份有限公司 | 一种基材处理的设备 |
WO2023234118A1 (ja) * | 2022-06-03 | 2023-12-07 | 東洋紡株式会社 | 光電変換素子及びその製造方法 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0298955A (ja) * | 1988-10-06 | 1990-04-11 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2743566B2 (ja) * | 1990-09-21 | 1998-04-22 | 日立電線株式会社 | エッチングにより微細パターンを形成する方法 |
JP3286002B2 (ja) * | 1993-03-25 | 2002-05-27 | オリンパス光学工業株式会社 | 薄膜形成装置 |
JP3879312B2 (ja) * | 1999-03-31 | 2007-02-14 | セイコーエプソン株式会社 | 膜の形成方法、及びデバイスの製造方法 |
US6304999B1 (en) * | 2000-10-23 | 2001-10-16 | Advanced Micro Devices, Inc. | Method and apparatus for embedded process control framework in tool systems |
JP2002356780A (ja) * | 2001-05-30 | 2002-12-13 | Sekisui Chem Co Ltd | 常圧プラズマ処理法における膜厚制御方法 |
JP2003077782A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2003257866A (ja) * | 2002-03-05 | 2003-09-12 | Nippon Soda Co Ltd | 薄膜パターンの製造方法 |
JP3951044B2 (ja) * | 2002-03-13 | 2007-08-01 | セイコーエプソン株式会社 | 成膜方法、並びにその方法を用いて製造したデバイス |
JP2003290709A (ja) * | 2002-03-29 | 2003-10-14 | Fuji Photo Film Co Ltd | マット形成装置及び平版印刷版の製造方法 |
JP4014142B2 (ja) * | 2002-05-02 | 2007-11-28 | 独立行政法人科学技術振興機構 | 光分解性シランカップリング剤 |
JP2004076076A (ja) * | 2002-08-14 | 2004-03-11 | Konica Minolta Holdings Inc | 大気圧プラズマ処理装置及び大気圧プラズマ処理方法 |
JP4892973B2 (ja) * | 2003-02-18 | 2012-03-07 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ素子の製造方法 |
JP4244686B2 (ja) * | 2003-04-18 | 2009-03-25 | セイコーエプソン株式会社 | パターン形成方法 |
JP3941066B2 (ja) * | 2003-09-11 | 2007-07-04 | 俊次 村野 | ライン状均一吐出装置、霧化装置、薄膜形成装置、パターン形成装置、三次元造形装置および洗浄装置。 |
JP4387775B2 (ja) * | 2003-11-25 | 2009-12-24 | 株式会社リコー | 有機薄膜の形成方法及びその形成装置 |
JP5124760B2 (ja) * | 2004-04-19 | 2013-01-23 | 静雄 藤田 | 成膜方法及び成膜装置 |
JP4946860B2 (ja) * | 2005-02-17 | 2012-06-06 | コニカミノルタホールディングス株式会社 | ガスバリアフィルム及びその製造方法、並びに該ガスバリアフィルムを用いた、有機el素子用樹脂基材、有機el素子 |
JP2006253216A (ja) * | 2005-03-08 | 2006-09-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2007206552A (ja) * | 2006-02-03 | 2007-08-16 | Asahi Glass Co Ltd | 光処理基材の製造方法 |
JP2008050321A (ja) * | 2006-08-28 | 2008-03-06 | Univ Kanagawa | 光分解性カップリング剤 |
JP2008094647A (ja) * | 2006-10-10 | 2008-04-24 | Fujikura Ltd | 成膜装置 |
JP5177617B2 (ja) * | 2006-12-25 | 2013-04-03 | 独立行政法人産業技術総合研究所 | 酸化シリコン薄膜形成装置 |
WO2008129819A1 (ja) | 2007-04-13 | 2008-10-30 | Nikon Corporation | 表示素子の製造方法、表示素子の製造装置、及び表示素子 |
JP4637872B2 (ja) * | 2007-06-12 | 2011-02-23 | シャープ株式会社 | 配線構造およびその製造方法 |
JPWO2009031423A1 (ja) * | 2007-09-03 | 2010-12-09 | コニカミノルタホールディングス株式会社 | 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ |
JP2009065012A (ja) * | 2007-09-07 | 2009-03-26 | Konica Minolta Holdings Inc | 薄膜トランジスタ |
KR20110028473A (ko) * | 2008-06-30 | 2011-03-18 | 가부시키가이샤 니콘 | 표시 소자의 제조 방법 및 제조 장치, 박막 트랜지스터의 제조 방법 및 제조 장치, 및 회로 형성 장치 |
JP2010258206A (ja) * | 2009-04-24 | 2010-11-11 | Konica Minolta Holdings Inc | 金属酸化物半導体の製造方法、金属酸化物半導体及びこれを用いた半導体素子、薄膜トランジスタ |
JP5534552B2 (ja) * | 2009-05-20 | 2014-07-02 | 株式会社ニコン | パターン形成装置、パターン形成方法、デバイス製造装置、及びデバイス製造方法 |
JP5360571B2 (ja) * | 2009-08-12 | 2013-12-04 | 株式会社ニコン | 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム |
WO2011102053A1 (ja) * | 2010-02-18 | 2011-08-25 | 富士電機ホールディングス株式会社 | 成膜装置及び成膜方法、並びに薄膜太陽電池の製造装置及び製造方法 |
JP2011181591A (ja) * | 2010-02-26 | 2011-09-15 | Sumitomo Chemical Co Ltd | 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法 |
CN102782580B (zh) * | 2010-02-26 | 2015-04-22 | 株式会社尼康 | 图案形成方法 |
JP5273074B2 (ja) * | 2010-03-19 | 2013-08-28 | コニカミノルタ株式会社 | バリアフィルムの製造方法 |
WO2011126132A1 (ja) * | 2010-04-09 | 2011-10-13 | 株式会社ニコン | 基板処理装置 |
JP5573521B2 (ja) * | 2010-09-09 | 2014-08-20 | セイコーエプソン株式会社 | 液体吐出装置及び液体吐出方法 |
KR102057813B1 (ko) * | 2012-05-24 | 2019-12-19 | 가부시키가이샤 니콘 | 미스트 성막장치 |
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