JP6024075B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 230000000052 comparative effect Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 GaN Chemical compound 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/2003—Nitride compounds
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Junction Field-Effect Transistors (AREA)
Description
原料ガス:NH3(アンモニア)、TMA(トリメチルアルミニウム)
成長温度:1100℃
膜厚 :300nm
次いで、AlN層12上にAlGaN層14を成膜する。成膜条件は以下である。AlN層12とAlGaN層14とによりバッファ層16が形成される。
原料ガス :NH3、TMA、TMG(トリメチルガリウム)
成長温度 :1100℃
Al組成比:50%
膜厚 :100nm
原料ガス :NH3、TMG
成長温度 :1050℃
成長圧力 :100torr
成長速度 :1.0μm/hour
V/III比:2000
膜厚 :300nm
原料ガス :NH3、TMG
成長温度 :1050℃
成長圧力 :100torr
成長速度 :1.0μm/hour
V/III比:10000
膜厚 :700nm
原料ガス :NH3、TMA、TMG
Al組成比:20%
膜厚 :20nm
次いで、AlGaN電子供給層24上にGaNキャップ層28を成膜する。成膜条件は以下である。
原料ガス:NH3、TMG
膜厚 :2nm
原料ガス:NH3、TMA
成長温度:1100℃
膜厚 :300nm
次いで、AlN層42上にAlGaN層44を成膜する。成膜条件は以下である。AlN層42とAlGaN層44によりバッファ層46が形成される。
原料ガス :NH3、TMA、TMG
成長温度 :1100℃
Al組成比:50%
膜厚 :100nm
原料ガス :NH3、TMG
成長温度 :1050℃
成長圧力 :100torr
成長速度 :1.0μm/hour
V/III比:10000
膜厚 :1000nm
原料ガス :NH3、TMA、TMG
Al組成比:20%
膜厚 :20nm
次いで、AlGaN電子供給層50上にGaNキャップ層54を成膜する。成膜条件は以下である。
原料ガス:NH3、TMG
膜厚 :2nm
次いで、GaNキャップ層54上に、例えば蒸着法およびリフトオフ法を用いて、ソース電極56、ドレイン電極58、およびゲート電極60を形成する。以上により、比較例1に係る半導体装置が完成する。
12 AlN層
14 AlGaN層
16 バッファ層
18 第1のGaN層
20 第2のGaN層
22 GaN層
24 AlGaN電子供給層
26 チャネル層
28 GaNキャップ層
30 ソース電極
32 ドレイン電極
34 ゲート電極
40 シリコン基板
42 AlN層
44 AlGaN層
46 バッファ層
48 GaN層
50 AlGaN電子供給層
52 チャネル層
54 GaNキャップ層
56 ソース電極
58 ドレイン電極
60 ゲート電極
Claims (4)
- シリコン基板上に、AlN層と前記AlN層上に設けられたAlGaN層とからなるバッファ層を形成する工程と、
前記バッファ層上にMOCVD法によって炭素がドーピングされた第1のGaN層を形成する工程と、
前記第1のGaN層の上面に接してMOCVD法によって第2のGaN層を形成する工程と、
前記第2のGaN層上に、GaNよりもバンドギャップが大きい電子供給層を形成する工程と、を有し、
前記第1のGaN層を形成する工程のV/III比は、前記第2のGaN層を形成する工程のV/III比よりも低く、
前記第2のGaN層の厚さは、前記第1のGaN層の厚さよりも厚く、
前記第1のGaN層の厚さは、500nm以下であることを特徴とする半導体装置の製造方法。 - 前記第1のGaN層と前記第2のGaN層とを、NH3とTMGとを原料ガスに用いたMOCVD法によって形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第1のGaN層を形成する工程のNH3分圧は、前記第2のGaN層を形成する工程のNH3分圧よりも低いことを特徴とする請求項2記載の半導体装置の製造方法。
- 前記第2のGaN層に含まれる炭素の濃度は、1.0×1017Atoms/cm3以下であることを特徴とする請求項1から3のいずれか一項記載の半導体装置の製造方法。
Priority Applications (2)
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JP2010171914A JP6024075B2 (ja) | 2010-07-30 | 2010-07-30 | 半導体装置およびその製造方法 |
US13/194,217 US20120025202A1 (en) | 2010-07-30 | 2011-07-29 | Semiconductor device and method for fabricating the same |
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JP2010171914A JP6024075B2 (ja) | 2010-07-30 | 2010-07-30 | 半導体装置およびその製造方法 |
Publications (2)
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JP2012033703A JP2012033703A (ja) | 2012-02-16 |
JP6024075B2 true JP6024075B2 (ja) | 2016-11-09 |
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US (1) | US20120025202A1 (ja) |
JP (1) | JP6024075B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013197357A (ja) * | 2012-03-21 | 2013-09-30 | Hitachi Cable Ltd | 窒化物半導体デバイス及びその製造方法 |
JP6015053B2 (ja) * | 2012-03-26 | 2016-10-26 | 富士通株式会社 | 半導体装置の製造方法及び窒化物半導体結晶の製造方法 |
JP6151487B2 (ja) | 2012-07-10 | 2017-06-21 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5765861B2 (ja) * | 2012-08-27 | 2015-08-19 | コバレントマテリアル株式会社 | 窒化物半導体層の分析方法及びこれを用いた窒化物半導体基板の製造方法 |
CN203800053U (zh) * | 2013-10-30 | 2014-08-27 | 英飞凌科技奥地利有限公司 | 半导体器件及包括该半导体器件的集成装置 |
JP2015192026A (ja) * | 2014-03-28 | 2015-11-02 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6249868B2 (ja) * | 2014-04-18 | 2017-12-20 | サンケン電気株式会社 | 半導体基板及び半導体素子 |
JP6547581B2 (ja) * | 2015-10-22 | 2019-07-24 | 三菱電機株式会社 | 半導体装置 |
JP6233476B2 (ja) * | 2016-09-07 | 2017-11-22 | 富士通株式会社 | 化合物半導体装置 |
CN108695385B (zh) * | 2018-07-17 | 2024-04-05 | 中山市华南理工大学现代产业技术研究院 | 一种基于Si衬底的GaN基射频器件外延结构及其制造方法 |
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US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
SG135924A1 (en) * | 2003-04-02 | 2007-10-29 | Sumitomo Electric Industries | Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate |
JP4514584B2 (ja) * | 2004-11-16 | 2010-07-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2006269862A (ja) * | 2005-03-25 | 2006-10-05 | Oki Electric Ind Co Ltd | 半導体装置形成用ウエハ、その製造方法、および電界効果型トランジスタ |
US7326971B2 (en) * | 2005-06-08 | 2008-02-05 | Cree, Inc. | Gallium nitride based high-electron mobility devices |
JP5064824B2 (ja) * | 2006-02-20 | 2012-10-31 | 古河電気工業株式会社 | 半導体素子 |
JP2008244036A (ja) * | 2007-03-27 | 2008-10-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結晶および半導体装置 |
JP2010123725A (ja) * | 2008-11-19 | 2010-06-03 | Sanken Electric Co Ltd | 化合物半導体基板及び該化合物半導体基板を用いた半導体装置 |
JP4677499B2 (ja) * | 2008-12-15 | 2011-04-27 | Dowaエレクトロニクス株式会社 | 電子デバイス用エピタキシャル基板およびその製造方法 |
US8742459B2 (en) * | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
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2010
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