JP2012015304A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012015304A JP2012015304A JP2010150059A JP2010150059A JP2012015304A JP 2012015304 A JP2012015304 A JP 2012015304A JP 2010150059 A JP2010150059 A JP 2010150059A JP 2010150059 A JP2010150059 A JP 2010150059A JP 2012015304 A JP2012015304 A JP 2012015304A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 59
- 229910002601 GaN Inorganic materials 0.000 description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 49
- 229910002704 AlGaN Inorganic materials 0.000 description 46
- 230000000052 comparative effect Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】本発明は、(111)面から0.1度以下のオフ角度で傾斜した面を主面とするSi基板10と、Si基板10の主面に接して設けられ、(002)面のX線回折におけるロッキングカーブの半値幅が2000sec以下であるAlN層12と、AlN層12上に設けられたGaN系半導体層20と、を備える半導体装置100である。
【選択図】図7
Description
12 AlN層
14 AlGaNバッファ層
16 GaNチャネル層
18 AlGaN電子供給層
20 GaN系半導体層
22 半導体エピ基板
24 ソース電極
26 ドレイン電極
28 ゲート電極
30 ゲート絶縁膜
32 バリア層
100 半導体装置
Claims (6)
- (111)面から0.1度以下のオフ角度で傾斜した面を主面とするSi基板と、
前記Si基板の主面に接して設けられ、(002)面のX線回折におけるロッキングカーブの半値幅が2000sec以下であるAlN層と、
前記AlN層上に設けられたGaN系半導体層と、を備えることを特徴とする半導体装置。 - 前記Si基板の主面は、前記(111)面であることを特徴とする請求項1記載の半導体装置。
- 前記AlN層は、前記(002)面のX線回折におけるロッキングカーブの半値幅が1000sec以下であることを特徴とする請求項1記載の半導体装置。
- 前記AlN層の厚さは、100nm以上であって500nm以下であることを特徴とする請求項1記載の半導体装置。
- 前記GaN半導体層のグレインサイズは、250000μm2以上であることを特徴とする請求項1記載の半導体装置。
- 前記半導体装置は、ゲート電位がゲート絶縁膜を介して印加される構造、ゲート電位がショットキー接合を介して印加される構造、あるいはゲート電界がPN接合を介して印加される構造のいずれかからなることを特徴とする請求項1記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010150059A JP2012015304A (ja) | 2010-06-30 | 2010-06-30 | 半導体装置 |
US13/171,627 US8754419B2 (en) | 2010-06-30 | 2011-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010150059A JP2012015304A (ja) | 2010-06-30 | 2010-06-30 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
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JP2012015304A true JP2012015304A (ja) | 2012-01-19 |
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JP2010150059A Pending JP2012015304A (ja) | 2010-06-30 | 2010-06-30 | 半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US8754419B2 (ja) |
JP (1) | JP2012015304A (ja) |
Cited By (8)
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WO2014010405A1 (ja) * | 2012-07-13 | 2014-01-16 | 株式会社村田製作所 | トランジスタおよびトランジスタの製造方法 |
WO2014103125A1 (ja) * | 2012-12-26 | 2014-07-03 | パナソニック株式会社 | 窒化物半導体装置および窒化物半導体基板 |
EP2797108A1 (en) | 2013-04-25 | 2014-10-29 | Covalent Materials Corporation | Nitride semiconductor substrate |
WO2015005083A1 (ja) * | 2013-07-12 | 2015-01-15 | シャープ株式会社 | 窒化物半導体積層基板、窒化物半導体装置および窒化物半導体積層基板の製造方法 |
JP2015023258A (ja) * | 2013-07-23 | 2015-02-02 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
WO2015115126A1 (ja) * | 2014-01-31 | 2015-08-06 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JP2016195241A (ja) * | 2015-03-31 | 2016-11-17 | クアーズテック株式会社 | 窒化物半導体基板 |
US9530846B2 (en) | 2015-03-31 | 2016-12-27 | Coorstek Kk | Nitride semiconductor substrate |
Families Citing this family (2)
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US9064706B2 (en) * | 2006-11-17 | 2015-06-23 | Sumitomo Electric Industries, Ltd. | Composite of III-nitride crystal on laterally stacked substrates |
KR101901932B1 (ko) * | 2012-11-02 | 2018-09-27 | 엘지전자 주식회사 | 이종 기판, 질화물 반도체 발광 소자 및 그 제조 방법 |
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WO2015115126A1 (ja) * | 2014-01-31 | 2015-08-06 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JP6089122B2 (ja) * | 2014-01-31 | 2017-03-01 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
JPWO2015115126A1 (ja) * | 2014-01-31 | 2017-03-23 | シャープ株式会社 | 窒化物半導体積層体およびその製造方法並びに窒化物半導体装置 |
US9530846B2 (en) | 2015-03-31 | 2016-12-27 | Coorstek Kk | Nitride semiconductor substrate |
JP2016195241A (ja) * | 2015-03-31 | 2016-11-17 | クアーズテック株式会社 | 窒化物半導体基板 |
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