JP5956209B2 - 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 - Google Patents
金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 222
- 238000000137 annealing Methods 0.000 title claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 117
- 229910052751 metal Inorganic materials 0.000 claims description 110
- 239000002184 metal Substances 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 109
- 239000000463 material Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000005224 laser annealing Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000014509 gene expression Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004380 Cholic acid Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910002650 Ni-SiC Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本出願は、「Laser Annealing of Ohmic Contacts to SiC」と題され、2003年8月14日出願の米国特許仮出願番号60/495,189、および「Laser Annealing of Ohmic Contacts to SiC」と題され、2003年8月15日出願の米国特許仮出願番号60/495,284の利益を主張する。また、上記の出願は、共に本出願と共通の譲受人を持ち、その全体をここに参照して組み込むものとする。
本発明による一部の態様においては、半導体素子用のオーミックコンタクトの形成方法は、炭化珪素(SiC)層上に金属を形成し、この金属とSiC層とをレーザアニーリングして金属とSiC層との界面部に金属−SiC材を形成することを含むことができる。この金属−SiC材の一部を除去して、SiC層をパターンに従って露出し、半導体素子上に少なくとも1つのオーミックコンタクトを設けることができる。
Claims (10)
- 半導体素子のオーミックコンタクトを形成する方法であって、減少させた厚さの炭化ケイ素(SiC)基板を供給するため、SiC基板を薄くして、前記基板の上部の一部を除去し、前記半導体素子の順方向電圧を低下させる、ステップと、
パターンに従って前記減少させた厚さのSiC基板上にフォトレジストを形成して、前記減少させた厚さのSiC基板の複数の第1の部分であって前記減少させた厚さのSiC基板上のそれぞれのコンタクトの箇所に対応した前記複数の第1の部分を露出し、かつ前記減少させた厚さのSiC基板の複数の第2の部分を被覆するステップと、
前記減少させた厚さのSiC基板の前記第1の部分と前記フォトレジストの上に金属を供給するステップと、
前記金属及び前記フォトレジストの上方にマスクを供給するステップであって、前記マスクは前記それぞれのコンタクトの箇所に対応した複数の開口部を含むステップと、
前記複数の開口部を通してレーザ光を入射させて、前記それぞれのコンタクトの箇所にオーミックコンタクトを供給する金属−炭化ケイ素(SiC)材を形成するエネルギーレベルで前記それぞれのコンタクトの箇所の前記金属と前記減少させた厚さのSiC基板をレーザアニーリングするステップと、
を有する前記半導体素子のオーミックコンタクトを形成する方法。 - 請求項1に記載の方法において、前記それぞれのコンタクトの箇所が前記金属と前記減少させた厚さのSiC基板との複数の第1の界面部を含み、
前記レーザアニーリングするステップは、
前記マスクの前記複数の開口部を通して、前記金属の前記複数の第1の界面部に前記レーザ光を入射させ、前記第2の部分に対向した前記マスクで前記レーザ光を遮蔽するステップを含むことを特徴とする方法。 - 前記減少させた厚さのSiC基板上の前記それぞれのコンタクトの箇所に複数のオーミックコンタクトが残るように、前記金属を前記複数の第2の部分から除去するステップをさらに含むことを特徴とする請求項2に記載の方法。
- 前記金属−SiC材が残るように、前記第2の部分の前記フォトレジストから前記金属を除去するステップと、
前記金属−SiC材上にオーバーレイを形成するステップと、
前記第2の部分から前記フォトレジストを除去するステップと
をさらに有することを特徴とする請求項1に記載の方法。 - 前記金属−SiC材上および前記フォトレジスト上にオーバーレイを形成するステップと、
前記第2の部分から前記フォトレジストを除去するステップと
をさらに有することを特徴とする請求項1に記載の方法。 - 前記フォトレジストと、その上の前記金属とをリフトオフして、前記金属−SiC材を残すステップと、
前記金属−SiC材上にオーバーレイを形成するステップと
をさらに有することを特徴とする請求項1に記載の方法。 - 前記減少させた厚さのSiC基板をダイシングするステップを更に有することを特徴とする請求項1に記載の方法。
- 前記レーザアニーリングするステップは、それぞれが10−3ohm・cm2未満の固有コンタクト抵抗を有する複数のオーミックコンタクトを形成するため、前記減少させた厚さのSiC基板のバンドギャップを超えるエネルギーレベルでレーザアニーリングするステップを含むことを特徴とする請求項1に記載の方法。
- 前記レーザアニーリングするステップは、それぞれが10−4ohm・cm2未満の固有コンタクト抵抗を有する複数のオーミックコンタクトを形成するため、前記減少させた厚さのSiC基板のバンドギャップを超えるエネルギーレベルでレーザアニーリングするステップを含むことを特徴とする請求項1に記載の方法。
- 前記半導体素子は傾斜した部分および垂直部分を有する側壁を含むことを特徴とする請求項1に記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49518903P | 2003-08-14 | 2003-08-14 | |
US60/495,189 | 2003-08-14 | ||
US49528403P | 2003-08-15 | 2003-08-15 | |
US60/495,284 | 2003-08-15 | ||
US10/916,113 US20050104072A1 (en) | 2003-08-14 | 2004-08-11 | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US10/916,113 | 2004-08-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006523380A Division JP2007534143A (ja) | 2003-08-14 | 2004-08-12 | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012114480A JP2012114480A (ja) | 2012-06-14 |
JP5956209B2 true JP5956209B2 (ja) | 2016-07-27 |
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JP2006523380A Pending JP2007534143A (ja) | 2003-08-14 | 2004-08-12 | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
JP2012065612A Active JP5956209B2 (ja) | 2003-08-14 | 2012-03-22 | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
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JP2006523380A Pending JP2007534143A (ja) | 2003-08-14 | 2004-08-12 | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20050104072A1 (ja) |
EP (2) | EP3522204B1 (ja) |
JP (2) | JP2007534143A (ja) |
KR (1) | KR20060057609A (ja) |
CA (1) | CA2535723A1 (ja) |
MY (1) | MY169522A (ja) |
TW (1) | TWI402997B (ja) |
WO (1) | WO2005020308A1 (ja) |
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2004
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- 2004-08-12 JP JP2006523380A patent/JP2007534143A/ja active Pending
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- 2004-08-12 KR KR1020067002928A patent/KR20060057609A/ko not_active Application Discontinuation
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- 2004-08-12 WO PCT/US2004/026210 patent/WO2005020308A1/en active Application Filing
- 2004-08-12 CA CA002535723A patent/CA2535723A1/en not_active Abandoned
- 2004-08-13 TW TW093124406A patent/TWI402997B/zh active
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2012
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EP1661170B1 (en) | 2019-04-03 |
MY169522A (en) | 2019-04-22 |
US20120164765A1 (en) | 2012-06-28 |
JP2007534143A (ja) | 2007-11-22 |
KR20060057609A (ko) | 2006-05-26 |
WO2005020308A1 (en) | 2005-03-03 |
US9608166B2 (en) | 2017-03-28 |
TW200509423A (en) | 2005-03-01 |
EP3522204A3 (en) | 2019-08-21 |
TWI402997B (zh) | 2013-07-21 |
CA2535723A1 (en) | 2005-03-03 |
EP3522204A2 (en) | 2019-08-07 |
EP3522204B1 (en) | 2020-07-29 |
EP1661170A1 (en) | 2006-05-31 |
JP2012114480A (ja) | 2012-06-14 |
US20050104072A1 (en) | 2005-05-19 |
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