JP5460975B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5460975B2 JP5460975B2 JP2008135282A JP2008135282A JP5460975B2 JP 5460975 B2 JP5460975 B2 JP 5460975B2 JP 2008135282 A JP2008135282 A JP 2008135282A JP 2008135282 A JP2008135282 A JP 2008135282A JP 5460975 B2 JP5460975 B2 JP 5460975B2
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 109
- 238000000034 method Methods 0.000 claims description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 51
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000010409 thin film Substances 0.000 claims description 43
- 229910021332 silicide Inorganic materials 0.000 claims description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 230000003746 surface roughness Effects 0.000 description 21
- 239000012535 impurity Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
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- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
今井聖支、他1名,「29p−ZM−14、Niサリサイドプロセスを用いたn型およびp型SiC同時コンタクト」,第51回応用物理関係連合講演会講演予稿集,社団法人応用物理学会、2004年3月28日、第1分冊、p.437
以下、本発明を図に示す実施形態について説明する。図1に、本実施形態に示すSiC半導体装置の製造方法により製造したプレーナ型MOSFET(縦型パワーMOSFET)の断面図を示す。本デバイスは、例えばインバータに適用すると好適なものである。図1に基づいて縦型パワーMOSFETの構造について説明する。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してシリサイド層111を形成するために用いるレーザ光を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
上記各実施形態では、パワーMOSFETを例に挙げて説明したが、これは単なる一例であり、ダイオードやIGBTなどの他の素子構造を備えたものについても本発明を適用することが可能である。
1a 主表面
1b 裏面
10 ソース電極
11 ドレイン電極
40 保護膜
51 レーザ光
110 金属薄膜
111 シリサイド層
Claims (6)
- 主表面(1a)および当該主表面の反対面である裏面(1b)を有し、単結晶炭化珪素からなる半導体基板(1)を備えた半導体装置の製造方法であって、
前記半導体基板を用意し、当該半導体基板の裏面を研磨することで当該裏面に凹凸を形成する研磨工程と、
前記研磨工程の後、前記半導体基板の裏面上にシリサイドを形成する金属薄膜(110)を形成する金属薄膜形成工程と、
前記金属薄膜形成工程の後、前記金属薄膜にレーザ光(50)を照射することで第1の電極(11)を形成する電極形成工程と、を含み、
前記電極形成工程では、固体レーザにて前記レーザ光(50)を照射すると共に、前記レーザ光(50)の波長を355nmとし、前記レーザ光における光子エネルギー(eV)とレーザ出力(mJ/cm2)の積が、1000(eV・mJ/cm2)以上かつ8000 (eV・mJ/cm2)以下となる範囲のレーザ出力として前記レーザ光の照射を前記金属薄膜にシリサイド層(111)が形成される時間行い、
前記研磨工程では、前記半導体基板の裏面の粗度(Ra)が10nm以上かつ500nm以下となるように前記裏面を研磨することを特徴とする炭化珪素半導体装置の製造方法。 - 前記金属薄膜形成工程では、前記金属薄膜としてNi、Ti、Mo、Wのいずれか1つもしくは複数を含む金属を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記金属薄膜形成工程では、前記金属薄膜の膜厚を10nm以上とすることを特徴とする請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記電極形成工程では、スキャニングもしくはマスキングにより、前記半導体基板の裏面上の金属薄膜部分のみに前記レーザ光(50)を照射することを特徴とする請求項1ないし3のいずれか1つに記載の炭化珪素半導体装置の製造方法。
- 前記半導体基板を用意する工程では、前記半導体基板の主表面側に素子構造が形成され、前記主表面に第2の電極(10)が形成されていると共に、前記裏面に前記第1の電極が形成され、前記第2の電極と前記第1の電極との間の前記素子構造に電流を流してなる縦型の半導体素子のうち、前記半導体基板に前記素子構造を形成すると共に、前記第2の電極を形成した後、前記半導体基板の裏面を研磨することを特徴とする請求項1ないし4のいずれか1つに記載の炭化珪素半導体装置の製造方法。
- 前記半導体基板を用意する工程では、前記第2の電極を形成した後に前記半導体基板の主表面側に当該第2の電極を覆う保護膜(40)を形成することを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。
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Cited By (2)
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WO2017026068A1 (ja) | 2015-08-12 | 2017-02-16 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
US11469303B2 (en) | 2020-01-09 | 2022-10-11 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
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JP2012004185A (ja) * | 2010-06-14 | 2012-01-05 | Denso Corp | 炭化珪素半導体装置の製造方法 |
KR20140099230A (ko) * | 2011-12-02 | 2014-08-11 | 스미토모덴키고교가부시키가이샤 | 반도체 장치의 제조 방법 |
JP5936042B2 (ja) | 2012-03-22 | 2016-06-15 | アイシン精機株式会社 | 半導体装置及びその製造方法 |
JP6089235B2 (ja) * | 2012-03-28 | 2017-03-08 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体素子の製造方法 |
EP2913843A4 (en) | 2012-10-23 | 2016-06-29 | Fuji Electric Co Ltd | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
EP3131112A1 (en) * | 2015-08-12 | 2017-02-15 | Laser Systems and Solutions of Europe | Method for forming an ohmic contact on a back-side surface of a silicon carbide substrate |
CN111373508B (zh) | 2017-11-21 | 2021-12-21 | 美高森美公司 | 用于经减薄的碳化硅器件中欧姆触点的方法和组件 |
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JP3288854B2 (ja) * | 1994-04-28 | 2002-06-04 | 新電元工業株式会社 | 半導体装置の製造方法 |
JP2002231628A (ja) * | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
JP3834589B2 (ja) * | 2001-06-27 | 2006-10-18 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
JP2006041248A (ja) * | 2004-07-28 | 2006-02-09 | Shindengen Electric Mfg Co Ltd | 半導体装置および半導体装置の製造方法 |
KR20080046658A (ko) * | 2005-09-16 | 2008-05-27 | 크리 인코포레이티드 | 실리콘 카바이드 전력 소자들을 그 상에 가지는 반도체웨이퍼들의 가공방법들 |
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Cited By (5)
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WO2017026068A1 (ja) | 2015-08-12 | 2017-02-16 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
JP6165313B2 (ja) * | 2015-08-12 | 2017-07-19 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法 |
JPWO2017026068A1 (ja) * | 2015-08-12 | 2017-08-10 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法 |
US10403497B2 (en) | 2015-08-12 | 2019-09-03 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
US11469303B2 (en) | 2020-01-09 | 2022-10-11 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
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