TWI331228B - Laser beam delivery system and method thereof, and laser lift-off method - Google Patents
Laser beam delivery system and method thereof, and laser lift-off method Download PDFInfo
- Publication number
- TWI331228B TWI331228B TW096103424A TW96103424A TWI331228B TW I331228 B TWI331228 B TW I331228B TW 096103424 A TW096103424 A TW 096103424A TW 96103424 A TW96103424 A TW 96103424A TW I331228 B TWI331228 B TW I331228B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser beam
- fly
- laser
- small
- delivery system
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 53
- 229910052594 sapphire Inorganic materials 0.000 claims description 42
- 239000010980 sapphire Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 35
- 229910002601 GaN Inorganic materials 0.000 claims description 32
- 238000005286 illumination Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Laser Beam Processing (AREA)
Description
1331228 4 , 九、發明說明: 【發明所屬之技術領域】 本發明是關於一種雷射光束傳遞系統及其方法,尤其 • 關於將一薄摸由一基板中分隔開之雷射光束傳遞系統及 • 其方法,更特別地,一雷射光束傳遞系統和其方法可應用 於雷射剝離技術(LLO,Laser Lift-Off)中,雷射剝離技 術係為製k 垂直型發光二極體(LED)不可獲缺的步驟之 •【先前技術】 一般來說,準分子雷射裝置在處理材料上有各種不同 之應用,例如,可精確處理和分隔兩互相結合之不同材 料。近來,因為準分子雷射光束的穩定性和負载量已改 善,因此使用範圍逐漸擴大至包括加工半導體材料,而 且,特別地,包括將一個薄膜由一晶元中分隔出來,以製 造一裝置。分隔出之薄膜有許多不同種類,包括複合半導 體、銅、銘、金和聚合物等等。為了分隔不同的薄^,雷 射光束具有例如是目標能密度、目標能均句性,以及目 曝光範圍等實質要素。 $ 以下將根據雷射剥離技術解釋習知技藝和本發明,帝 射剝離技術係為製造一垂直型發光二極體必需步驟"之田 -,然而,本發明領域並不限制於雷射剝離技二 體係為將電流轉換為光線的半導 體裝置。當活化層的電子掉回價帶時, 守 活化層的電子由半導體之價帶橫越對應‘隙’ TW3624PA/ OP06-QM-002-TW-00 5 I3·312?8 而活化,所發出的光波長和顏色取決於該帶隙能,且因帶 隙能係為與材料有關的其中一個特性,因此光波長和顏色 亦受半導體材料影響。 -發光二極體可發出不同範圍的有色光,例如是紅 光’綠光,監光和黃光。然而,發光二極體有一單色光源 之限制。某些狀況下發光二極體必須發出包含紅光、綠光 和藍光三種光之白光。舉例來說,一液晶顯示器之背光單 元必須發出白光。通常,白光由白熱燈泡或是一個螢光燈 所提供。雖然白熾燈泡較為便宜,但其壽命很短且發光效 率低。然而使用壽命有限為乡光燈的缺點,但比白熾燈泡 效率為高。此外,螢光燈需要一額外相當大、重,且較貴 的零件’例如是一穩壓器。 藉由使紅光、綠光和藍光等發光二極體之設置彼此接 近,以及藉由使每個發光二極體發出適當比例的光,以製 造白光發光二極體之一光源。然而,因為具有對應帶隙之 Φ 一適當晶體製造上的困難,所以不容易製造藍光發光二極 體。尤其,不易將一優良品質之藍光發光二極體與像是 Inp、GaAs和Gap等複合半導體聚合為一體。 除了上述的困難之外,基於氮化鎵(GaN)之一藍光發 光二極體於1994年引進市場後,已於商業上使用。氮化 鎵(GaN)藍光發光二極體科技正快速發展,使其發先率超 越白光燈泡和螢光燈泡之照明領域。 同時,如果基於InP、GaAs或是Gap的發光二極體, 因為這些類型的半導體層可於一導電基質上生長,因此難 TW3624PA/ QP06-QM-002-TW-00 6 i3?1228 以製造具有正負極接合的一垂直型發光二極體。然而,若 是基於氮化鎵(GaN)的發光二極體,一非傳導性藍寶石 (Alz〇3)基板用以減少晶體缺陷,這缺陷可於氮化鎵 晶膜生長過程中發生,且因為藍寶石為非傳導性物質,因 此上層頂部表面有第一和第二電極之水平型發光二極體 已經漸漸被採用。 圖1A和圖1B顯示習知技藝之垂直型發光二極體結構 之不意圖。 圖1A顯不習知技藝之垂直型發光二極體之一橫切面 圖。參照第1A圖,一藍寶石基板1〇上連續地形成一 n型 氮化嫁層GaNU、有多種量子井之-活化層12、Ρ型氮化 鎵層13和一透明傳導層14。然後,透明傳導層14之特定 部位上形成一第一電極15。 再者,光阻劑圖形(圖中未顯示)形成於包括第一電 極15之透明傳導層14上,因此,沒有形成第一電極15 鲁之透明傳導層14的其它零件之一部份沒有覆蓋光阻劑圖 形。透明傳導層14、P型氮化鎵層13,和活化層12都使 用光阻劑圖形作為光罩而選擇性地蝕刻。此時,n型氮化 鎵層11之一部分輕微地蝕刻。濕式蝕刻較乾式蝕刻為佳, 因為氮化鎵層不容易蝕刻。 一因此,該光阻劑圖形經由一去除製程而移除,且一竿 二電極16形成於11_(^]^層n之顯露部分之上。 如圖1B所示,圖⑶為習知技藝之發光二極管頂視 圖口為第电極管15和第二電極管16都需要以金屬絲 TW3624PA/ OP06-QM-002-TW-00 7 1331228 • f 而結合^所以發光二極管之晶片需足夠大以保護該電極 區,該晶片作為一晶圓片每單位輸出增加的一個障礙。此 ' 外,封裝製程中複雜的金屬絲結合增加生產上的花費。 • 再者,因為藍寶石基板不具傳導性,因此很難發出靜 電而增加產生較差裝置之可能性以及減低裝置之有效 性。此外,因為藍寶石之熱導性較低,因此當發光二極管 作用時,對於高輸出功率之發光二極管,藍寶石不容易散 發熱放射的特性限制發光二極體的高電流。 • 為解決因為水平發光二極體的限制和缺點,垂直型發 光二極體,尤其是不具藍寶石基板的垂直型發光二極體被廣泛地 研究。 - 假使垂直型發光二極體不具一藍寶石基板,氮化鎵磊 - 晶層在一藍寶石基板上形成,且一金屬支撐層形成於該磊 晶層。因為藍寶石層脫離§亥县晶層後’遙晶層可能由此金 屬支撐層所支撐,所以將藍寶石層與該表層分離是可行 的。一般來說,一雷射剝離(LLO)技術係用以將該藍寶石 ®層與該蟲晶層分離。 雷射剝離技術的基礎理論為,具有帶隙之材料對於 低於該帶隙能量的光為可透性,但吸收高於該帶隙能量的 光。例如,波長為248nm之KrF氪氟準分子雷射光束,和 波長為193nm的就氟JrF準分子雷射光束,有氮化鎵之大 約3.3eV之帶隙和藍寶石之大約10.OeV之帶隙兩者間的 能量,這些準分子雷射光束穿透該藍寶石基板,而被吸收 到氮化鎵磊晶層内。所以,該穿透藍寶石基板之準分子雷 TW3624PA/ OP06-QM-002-TW-00 8 射光束加熱且溶解界面之磊晶層,因 + 晶層分離出來。 將藍寳石基板由蟲 基於如何照射具有複數個發光二 射剝離技術大體上被分為兩群,掃^ 5體裝置的晶圓,雷 若使用掃描方法,則有一部分法和脈衝方法。 射,重複照射的部份可能發生斷裂或:可避免地重複性照 避免發生此問題,較佳地係採用脈I疋破裂的現象。爲了 一雷射光束脈衝施加於一單元照射P方法。亦即是需要將 射區域,且施加一雷射光束脈街於;域移動到下一個照 ,然後重複這些步驟,直到晶圓的敕—個照射區域 雖然脈衝方法以被採用,然目標區域都被照射。 狀和大小準確地對應單元照射區f要—光束點,就形 元照射區域以外的-部分,料光束點照射該單 ===斷裂或是破裂。另-方面,若 照純域,職寶石基板無 法元王由氮化錄蟲晶層分離出來。 即使-光束點之大小和形狀完全對應該單元照射區 域’若是能量強度沒有均勻地分布該光束點的整個區域, 則上述的問題仍會發生。也就是,如同第2圖所示,因為 原本雷射光束截面的能量強度依照高斯定律,該原本雷射 光束在中心部位有較高的能量強度,且在周圍部分有較低 的能量。因此,若雷射光束的能量強度足夠大,以確保藍 寶石基板由單元照射區域之周園部份的氮化鎵磊晶層分 離出來,則單元照射區域的中心部位可能產生缺陷。另一 TW3624PA/ OP06-QM-002-TW-00 9 1331228 ^ * 方面’若雷射光束的能量強度很低,以防止單元照射區域 之中心部位產生缺陷,則藍寶石基板無法由單元照射區域 周圍部份的氮化鎵磊晶層分離出來。總而言之,使用沒有 對產量有任何不良影響的原始雷射光束,相較於所有發光 一極體裝置的數目’產量指的是可能由一晶圓製造出之優 良品質之發光二極體裝置數目。 因此’如第3A圖到第3C圖中所示,一光束均質機 φ ι〇0被用以提昇光束點之能量強度的均勻性。習知技藝之 光束均質機100包括第一複眼微透鏡11〇和第二複眼微透 鏡12〇,以及用以重疊複數個離子束之一聚光透鏡13〇, 該第一和第二複眼微透鏡用以將雷射光束由一雷射光束 源刀離成複數個小離子束(未顯示),且用以調整小離子光 束之分散角。然而,習知技藝之第一複眼微透鏡11〇和第 一複眼微透鏡12〇為圓柱型。圓柱型複眼微透鏡11()係由 兩個互相結合的板111和112所組成,其中,每一個板ill φ寿I12係由複數個相互排成平行直線之圓柱型透鏡組成, 且其中板111之圓柱型透鏡係垂直於另一板112,因此 形成複數個小透鏡。 對圓柱型複眼微透鏡11〇和12〇,作為一複眼微透鏡 之小透鏡大小之距大約為5毫米,且因為複眼透鏡的結 構,在疋長度内,小透鏡不易縮小。因此,如同第3D 圖所示,增加有效小透鏡數目係受一限制,有效小透鏡為 雷射光束實際穿透過,因此要增加由雷射光束分散的小光 束也是受到限制的。所以,因為圓柱型複眼微透鏡小光束 TW3624PA/ OP06-QM-002-TW-00 10 1331228BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a laser beam delivery system and method thereof, and more particularly to a laser beam delivery system for separating a thin touch from a substrate and • The method, and more particularly, a laser beam delivery system and method thereof can be applied to laser lift-off technology (LLO, Laser Lift-Off), which is a k-type vertical light-emitting diode (LED) Indispensable steps • [Prior Art] In general, excimer laser devices have a variety of applications in processing materials, for example, to precisely process and separate two different materials that are combined with each other. Recently, since the stability and load of the excimer laser beam have been improved, the range of use has been gradually expanded to include processing semiconductor materials, and, in particular, including separating a film from a wafer to fabricate a device. There are many different types of films that are separated, including composite semiconductors, copper, ingots, gold, and polymers. In order to separate the different thin films, the laser beam has substantial elements such as target energy density, target energy uniformity, and target exposure range. The following will explain the conventional art and the present invention according to the laser stripping technique, which is a necessary step for manufacturing a vertical type light-emitting diode. However, the field of the invention is not limited to laser stripping. The second system is a semiconductor device that converts current into light. When the electrons of the active layer fall back to the valence band, the electrons of the sustaining layer are activated by the valence band of the semiconductor across the corresponding 'gap' TW3624PA/ OP06-QM-002-TW-00 5 I3·312?8. The wavelength and color of the light depend on the bandgap energy, and because the bandgap energy is one of the properties associated with the material, the wavelength and color of the light are also affected by the semiconductor material. - Light-emitting diodes emit different ranges of colored light, such as red light, green light, and light and yellow light. However, the light-emitting diode has a limitation of a monochromatic light source. In some cases, the light-emitting diode must emit white light containing three types of light: red, green, and blue. For example, a backlight unit of a liquid crystal display must emit white light. Usually, white light is provided by an incandescent light bulb or a fluorescent light. Although incandescent bulbs are relatively inexpensive, they have a short life span and low luminous efficiency. However, the limited service life is a disadvantage of the township light, but it is more efficient than the incandescent light bulb. In addition, fluorescent lamps require an additional relatively large, heavy, and expensive part, such as a voltage regulator. One of the white light-emitting diodes is fabricated by bringing the light-emitting diodes such as red, green, and blue light into close proximity to each other, and by causing each of the light-emitting diodes to emit an appropriate proportion of light. However, it is not easy to manufacture a blue light-emitting diode because of the difficulty in manufacturing a proper crystal with a corresponding band gap. In particular, it is difficult to polymerize a good-quality blue light-emitting diode with a composite semiconductor such as Inp, GaAs, and Gap. In addition to the above difficulties, a blue light-emitting diode based on gallium nitride (GaN) has been commercially used since it was introduced to the market in 1994. Gallium nitride (GaN) blue light-emitting diode technology is rapidly evolving, making it a leader in the field of white light bulbs and fluorescent bulbs. Meanwhile, if a light-emitting diode based on InP, GaAs or Gap is used, since these types of semiconductor layers can be grown on a conductive substrate, it is difficult to manufacture TW3624PA/QP06-QM-002-TW-00 6 i3?1228 with A vertical type light emitting diode in which the positive and negative electrodes are joined. However, if a gallium nitride (GaN)-based light-emitting diode, a non-conductive sapphire (Alz〇3) substrate is used to reduce crystal defects, this defect can occur during the growth of the gallium nitride film, and because sapphire As a non-conductive substance, a horizontal type light-emitting diode having first and second electrodes on the top surface of the upper layer has been gradually adopted. 1A and 1B show a schematic view of a vertical type light emitting diode structure of the prior art. Fig. 1A shows a cross-sectional view of one of the vertical type light-emitting diodes of the prior art. Referring to Fig. 1A, an n-type nitrided layer of Ganu, a plurality of quantum well-activated layers 12, a germanium-type gallium nitride layer 13 and a transparent conductive layer 14 are successively formed on a sapphire substrate. Then, a first electrode 15 is formed on a specific portion of the transparent conductive layer 14. Further, a photoresist pattern (not shown) is formed on the transparent conductive layer 14 including the first electrode 15, and therefore, part of other parts of the transparent conductive layer 14 which is not formed of the first electrode 15 is not covered. Photoresist pattern. The transparent conductive layer 14, the P-type gallium nitride layer 13, and the active layer 12 are selectively etched using a photoresist pattern as a mask. At this time, a portion of the n-type gallium nitride layer 11 is slightly etched. Wet etching is preferred over dry etching because the gallium nitride layer is not easily etched. Therefore, the photoresist pattern is removed through a removal process, and a second electrode 16 is formed on the exposed portion of the layer 11 n. As shown in FIG. 1B, the figure (3) is a conventional technique. The top view of the LED is that the electrode tube 15 and the second electrode tube 16 need to be combined with the wire TW3624PA/OP06-QM-002-TW-00 7 1331228 • f. Therefore, the chip of the LED should be large enough to protect. In this electrode region, the wafer acts as an obstacle to the increase in output per unit of wafer. In addition, the complicated wire bonding in the packaging process increases the production cost. • Furthermore, since the sapphire substrate is not conductive, it is very It is difficult to generate static electricity to increase the possibility of producing poor devices and to reduce the effectiveness of the device. In addition, because sapphire has low thermal conductivity, sapphire does not easily emit heat radiation for high output power LEDs when LEDs are used. The characteristics limit the high current of the light-emitting diode. • To solve the limitations and disadvantages of the horizontal light-emitting diode, the vertical light-emitting diode, especially without the sapphire substrate Straight light emitting diodes have been extensively studied. - If the vertical type light emitting diode does not have a sapphire substrate, a gallium nitride epitaxial layer is formed on a sapphire substrate, and a metal supporting layer is formed on the epitaxial layer. Since the sapphire layer is removed from the §Haixian layer, the telecrystal layer may be supported by the metal support layer, so it is feasible to separate the sapphire layer from the surface layer. In general, a laser lift-off (LLO) technique is used. Separating the sapphire® layer from the worm layer. The basic theory of laser stripping technology is that a material with a band gap is permeable to light below the band gap energy, but absorbs light above the band gap energy. For example, a KrF 氪fluoroexcimer laser beam with a wavelength of 248 nm, and a fluorine-based JrF excimer laser beam with a wavelength of 193 nm, a band gap of about 3.3 eV for gallium nitride and a band of about 10. OeV for sapphire. The energy between the two, the excimer laser beam penetrates the sapphire substrate and is absorbed into the gallium nitride epitaxial layer. Therefore, the excimer laser TW3624PA/ OP06-QM-002- penetrates the sapphire substrate. TW-00 8 beam is heated and The epitaxial layer of the interface is separated by the + crystal layer. The sapphire substrate is generally divided into two groups based on how the illuminating technique has multiple luminescent stripping techniques, and the wafer of the 5 device is scanned. When using the scanning method, there are some methods and pulse methods. The part that is repeatedly irradiated may be broken or may be avoided repeatedly to avoid this problem, preferably by the phenomenon of pulse I疋 rupture. The beam pulse is applied to a unit illumination P method, that is, the area to be irradiated is applied, and a laser beam is applied to the field; the field is moved to the next picture, and then the steps are repeated until the area of the wafer is irradiated Although the pulse method is employed, the target area is illuminated. The shape and size correspond exactly to the unit illumination area f-beam point, and the part of the beam is irradiated to the single part ===break or crack. On the other hand, if the pure domain is used, the gemstone substrate can not be separated from the nitrided crystal layer. Even if the size and shape of the beam spot completely correspond to the unit illumination area, the above problem still occurs if the energy intensity does not uniformly distribute the entire area of the beam spot. That is, as shown in Fig. 2, since the energy intensity of the original laser beam section is Gauss's law, the original laser beam has a higher energy intensity at the center portion and a lower energy in the surrounding portion. Therefore, if the energy intensity of the laser beam is sufficiently large to ensure that the sapphire substrate is separated by the gallium nitride epitaxial layer of the peripheral portion of the unit irradiation region, defects may occur in the central portion of the unit irradiation region. Another TW3624PA/ OP06-QM-002-TW-00 9 1331228 ^ * Aspect 'If the energy intensity of the laser beam is low to prevent defects in the center of the unit illumination area, the sapphire substrate cannot be illuminated by the unit. The gallium nitride epitaxial layer is separated. In summary, the use of an original laser beam that does not have any adverse effect on throughput, compared to the number of all light-emitting diode devices, yields the number of light-emitting diode devices that may be manufactured from a single wafer. Therefore, as shown in Figs. 3A to 3C, a beam homogenizer φ ι 〇 0 is used to increase the uniformity of the energy intensity of the beam spot. The beam homogenizer 100 of the prior art includes a first compound eye microlens 11 〇 and a second compound eye microlens 12 〇, and a concentrating lens 13 重叠 for overlapping a plurality of ion beams, the first and second compound eye microlenses The laser beam is used to separate the laser beam from a laser beam source into a plurality of small ion beams (not shown) and to adjust the dispersion angle of the small ion beam. However, the first compound eye microlens 11 〇 and the first compound eye microlens 12 习 of the prior art are cylindrical. The cylindrical compound-eye microlens 11 () is composed of two mutually combined plates 111 and 112, wherein each plate ill φ I12 is composed of a plurality of cylindrical lenses arranged in parallel with each other, and wherein the plate 111 The cylindrical lens is perpendicular to the other plate 112, thus forming a plurality of lenslets. For the cylindrical compound-eye microlenses 11 〇 and 12 〇, the distance of the lenslets as a compound-eye microlens is about 5 mm, and because of the structure of the fly-eye lens, the lenslets are not easily reduced in the length of the cymbal. Therefore, as shown in Fig. 3D, increasing the number of effective lenslets is limited by the fact that the effective lenslets actually penetrate the laser beam, and therefore it is also limited to increase the small beam dispersed by the laser beam. Therefore, because the cylindrical compound eye microlens small beam TW3624PA/ OP06-QM-002-TW-00 10 1331228
I ,目增加之限制’良好均勾的光束點之能量強度難以獲 =,也因此相較於可能有一晶圓所製造之所有發光二極體 :置之數目’亦即是產量,良好品質之發光二極體數目將 党到不利的影響。 、 、同¥,為了增加有效小透鏡的數目,藉由位於雷射光 束源和光束均質機100間之光束擴散望遠鏡(βΕΤ)(圖中未 ’’、、貝不),雷射光束之截面大小可能被擴大,並且採用尺寸 鲁足以接收已擴大雷射光束之圓柱型複眼微透鏡。然而,因 為^個系統大小的限制,能量強度均句性仍受到限制。此 外’因為必須同時使用光束擴散望遠鏡,製造整個雷射光 束傳遞系統的複雜性增加,以及生產成本也增加。此外, 糸統之光束傳送減低,因為雷射光束必須穿透一額外光學 元件’也就疋光束擴散望遠鏡。 再者,以光束傳送而言,圓柱型複眼微透鏡η〇和 120有-個主要的問題’因為雷射光束無法穿透介於圓柱 •型透鏡間介面之圓柱型複眼微透鏡,且一圓柱型複眼微透 鏡包括兩層,此兩層係為使雷射光束可以穿透之光學元 件。結果,代表原始光束穿透整個系統及傳送到晶圓之大 小的光束傳送小’因此,每單位時間之發光二極體產量明 顯地受到限制。 【發明内容】 本發明之一雷射光束傳遞系統和其方法,以及一雷射 剝離方法’用以大量排除習知技藝之限制或缺點所造成之 TW3624PA/ OP06-QM-002-TW-00 11 1331228 一個或多個問題 曼點係提供一番射光走值、膝么 其方法,以及—雷射_ 束傳遞糸统和 式,使得所有光束點交At曰 〜田、離方法之配置方 尤末點之能量強度 i万 工產量也顯著地提高。 ΊΊ〖生増加,且因此加 本發明之另-優點在於提供I. The limit of the increase of the target is that it is difficult to obtain the energy intensity of the beam point of the good hook, and therefore, compared with all the light-emitting diodes that may be fabricated by one wafer: the number of 'is the yield, good quality The number of light-emitting diodes will have an adverse effect on the party. , in addition to ¥, in order to increase the number of effective lenslets, by the beam diffusing telescope (βΕΤ) between the laser beam source and the beam homogenizer 100 (not in the figure, not in the figure), the cross section of the laser beam The size may be enlarged and a cylindrical compound eye microlens of sufficient size to receive the expanded laser beam is used. However, due to the limitation of system size, the energy intensity is still limited. In addition, because of the necessity to use a beam-diffusing telescope at the same time, the complexity of manufacturing the entire laser beam delivery system is increased, and the production cost is also increased. In addition, the beam transmission of the system is reduced because the laser beam must penetrate an additional optical component, which is the beam diverging telescope. Furthermore, in terms of beam transmission, the cylindrical compound-eye microlens η〇 and 120 have a major problem 'because the laser beam cannot penetrate the cylindrical compound-eye microlens between the cylindrical lens type interface, and a cylinder The type compound eye microlens comprises two layers, which are optical elements that allow the laser beam to penetrate. As a result, the light beam representing the size of the original beam passing through the entire system and being transferred to the wafer is small. Therefore, the output of the light-emitting diode per unit time is significantly limited. SUMMARY OF THE INVENTION A laser beam delivery system and method thereof, and a laser stripping method are used to substantially eliminate the limitations or disadvantages of the prior art. TW3624PA/OP06-QM-002-TW-00 11 1331228 One or more problems The man point system provides a certain method of light, the method of the knee, and the method of the laser beam transmission system, so that all the beam points are connected to the At曰~ field and the method of the method. The energy intensity of the point i is also significantly increased. ΊΊ 増 増 ,, and thus add another aspect of the invention - the advantage is that
束穿料,制此提高每-單彳瑪·方 本七明之另-優點在於提供一雷射光束傳^里。 其方法,以及-雷射_方法,該雷射剝離方法之、配^ 式係使得生產過程簡化,生產成本減少,且因此 發光一極體市場的競爭力得以提升。 -在 本發明其它的優點和特徵將於下列實施例中提出, 某種程度上,由實施例可以更明顯易懂。 且 專利說明書所指出之結構和所附圖*,本^明=及 它優點將可以實現與達成。 π °其 為了達成上述優點以及符合本發明之目標,提出一 射光束傳遞系統。雷射光束傳遞系統包括:一雷射光束― 源、-光束均質機、-光罩,以及—影像透鏡,其中該 射光束源用以發射雷射光束’該光束均質機具—微透鏡型 之複眼透鏡,以提升雷射光束能量強度的均勻度,,該光 罩用以遮蓋雷射光束一截面之一周圍區域,且於一焦點平 面穿透該光束均質機,以及該影像透鏡用以使雷射光束照 射在一目標之一單元輻射區域。 TW3624PA/ OP06-QM-002-TW-00 12 1331228 本發明之另一方面提供傳遞雷射光束之一方法,該方 法包括:發射準分子雷射光束、用一微透鏡型複眼透鏡, 將已發射之準分子雷射光束區分為複數個小光束、使該複 數個小光束部分重疊,因此製造出均質的雷射光束,遮蓋 該均質化之雷射光束的一周圍區域,以及使遮蓋住的均質 化雷射光束作用於目標上。The beam is woven, and this is improved. Each of the 彳 · · 方 方 七 - - - - - - - - - - - - - - - - - 优点The method, and the laser method, the laser stripping method, the production system is simplified, the production cost is reduced, and thus the competitiveness of the light-emitting body market is improved. Other advantages and features of the present invention will be set forth in the following examples, which may be more apparent from the examples. And the structure and drawings shown in the patent specification, and the advantages thereof, can be achieved and achieved. π ° In order to achieve the above advantages and to meet the objectives of the present invention, a beam delivery system is proposed. The laser beam delivery system comprises: a laser beam - a source, a beam homogenizer, a reticle, and an image lens, wherein the beam source is used to emit a laser beam - the beam homogenizer - a microlens type compound eye a lens for accommodating the uniformity of the energy intensity of the laser beam, the reticle covering the area around one of the sections of the laser beam, and penetrating the beam homogenizer at a focal plane, and the image lens is used to make the beam The beam of light is illuminated in a unit radiation area of a target. TW3624PA/ OP06-QM-002-TW-00 12 1331228 Another aspect of the invention provides a method of transmitting a laser beam, the method comprising: emitting a quasi-molecular laser beam, using a microlens type fly-eye lens, to emit The excimer laser beam is divided into a plurality of small beams, and the plurality of small beams are partially overlapped, thereby producing a homogeneous laser beam, covering a surrounding area of the homogenized laser beam, and homogenizing the cover The laser beam acts on the target.
本發明之另一方面提供一雷射剝離方方法,該方法包 括:於一藍寶石基板上形成一氮化鎵磊晶層、發射準分子 雷射光束、藉由一微透鏡型複眼透鏡,將已發射之準7分子 ,射光束分為複數個小光束、使該複數個小光束部分重 疊’因此製造出均質的雷射光束、遮蓋一均質化雷:光束 之周圍區域、使已遮蓋均質化的雷射光束作用於該藍寶石 ==雷射區域’以及嶋石基板由該咖Another aspect of the present invention provides a laser stripping method comprising: forming a gallium nitride epitaxial layer on a sapphire substrate, emitting a pseudo-molecular laser beam, and using a microlens type fly-eye lens The emission is 7 molecules, the beam is divided into a plurality of small beams, and the plurality of small beams are partially overlapped. Thus, a homogeneous laser beam is produced, and a homogenized lightning beam is covered: the surrounding area of the beam, and the covered area is homogenized. The laser beam acts on the sapphire == laser area 'and the vermiculite substrate from the coffee
TW3624PA/ OP06-QM-002-TW-00 1331228TW3624PA/ OP06-QM-002-TW-00 1331228
I 【實施方式】 參考資料將於本發明之一實施例中詳細描述,且於下 列附圖描緣其例子。 可以瞭解的是,除了以下描述以及說明的之外,一雷 射光束傳遞系統更包括任意的光學元件,例如是,一反射 鏡,亦在本發明範圍内。 第4A圖至第4G圖為依照本發明一垂直型發光二極體 鲁之一組裝方法之剖面圖。 參照第4A圖,數個連續的層30包括一氮化鎵緩衝層 31、一 N型氮化鎵層32、具有一多量子井之一 InGaN/GaN/AlGalnN活化層33,以及一 P型氮化鎵層34, 藉由一傳統半導體科技,使其相繼地形成於一藍寶石基板 20上,例如金屬氧化化學氣相沉積法(M〇CVD,Metal 〇xide[Embodiment] The reference material will be described in detail in an embodiment of the present invention, and an example thereof will be described in the following drawings. It will be appreciated that in addition to the following description and illustration, a laser beam delivery system further includes any optical component, such as a mirror, which is also within the scope of the invention. 4A to 4G are cross-sectional views showing an assembly method of a vertical type light emitting diode according to the present invention. Referring to FIG. 4A, a plurality of successive layers 30 include a gallium nitride buffer layer 31, an N-type gallium nitride layer 32, an InGaN/GaN/AlGalnN active layer 33 having a multi-quantum well, and a P-type nitrogen. The gallium layer 34 is successively formed on a sapphire substrate 20 by a conventional semiconductor technology, such as metal oxide chemical vapor deposition (M〇CVD, Metal 〇xide).
Chemical Vapor Deposition)和分子束磊晶(MBE,Chemical Vapor Deposition) and molecular beam epitaxy (MBE,
Molecular Beam Epitaxy)。若是一氮化鎵薄膜直接形成 φ 於一藍寶石(A1203) (001)基板上’晶格之不連貫性可能不利 於薄膜的表面均勻性。因此,較令人滿意的則是首先形成 一緩衝層31,然後形成氮化鎵基層於該緩衝層31上。通 常’該藍寶石基板20之厚度大約330 // m至40 // m。整個 連續之氮化鎵基層30的厚度小於大約5/zm。 如同第4B圖所示,複數個溝渠40形成於連續之氮化 嫁基層30a上且穿過氮化錄基層30a。這些溝渠可延伸 至藍寶石基板20a於一預定的深度,以避免任何的缺陷, 除此以外,這些缺陷可發生於將藍寶石基板2〇a由氣化錄 TW3624PA/ OP06-QM-002-TW-00 14 1331228 基層30a分離出之其後的步驟中。該溝渠4〇用以界定個 別的發光二極體裝置,以及輔助一後續晶片分離步驟。每 一個別的發光二極體半導體較有利地為—大 f 之方形物。該溝渠40較有利的係窄,且延伸的深 度大於5#m,延伸至該藍寶石基板2〇a。 因為藍寶石基板20和氮化鎵基層3〇的硬度,溝渠 4〇的形成較有利的係使用反應性離子蝕刻系雷Molecular Beam Epitaxy). If a gallium nitride film directly forms φ on a sapphire (A1203) (001) substrate, the lattice inconsistency may be detrimental to the surface uniformity of the film. Therefore, it is more desirable to first form a buffer layer 31 and then form a gallium nitride based layer on the buffer layer 31. Typically, the sapphire substrate 20 has a thickness of about 330 // m to 40 // m. The thickness of the entire continuous gallium nitride based layer 30 is less than about 5/zm. As shown in Fig. 4B, a plurality of trenches 40 are formed on the continuous nitrided graft layer 30a and through the nitride substrate 30a. These trenches may extend to the sapphire substrate 20a at a predetermined depth to avoid any defects. In addition, these defects may occur in the sapphire substrate 2A by gasification recorded TW3624PA/OP06-QM-002-TW-00 14 1331228 The base layer 30a is separated from the subsequent steps. The trench 4 is used to define individual light emitting diode devices and to assist in a subsequent wafer separation step. Each of the other light-emitting diode semiconductors is advantageously a square of - large f. The trench 40 is advantageously narrower and extends deeper than 5#m to the sapphire substrate 2〇a. Because of the hardness of the sapphire substrate 20 and the gallium nitride base layer 3, the formation of the trench 4 is more advantageous by using a reactive ion etching system.
應輕合電装反應式離子#刻(1〔? RIE)。因為第一步驟係 為形成該溝渠40,因此一光阻劑(圖中未顯示)旋轉塗佈於 氮化鎵基層30上,然後’藉使用_及顯影技術圖案化。 顯影之後,電感應耦合電漿反應式離子蝕刻(IcpRi 過程’以光阻顯形作為-光罩,而選择性地# 基層30和藍寶石基板20,因此形成該溝渠4〇。 #照第4C @ ’㈣渠40形成後’係於該氮 3〇a和藍寶石基板20a的整個上表面,形成一導^基層It should be lightly combined with the electric reaction type ion #1 (? RIE). Since the first step is to form the trench 40, a photoresist (not shown) is spin-coated on the gallium nitride based layer 30 and then patterned by use and development techniques. After development, an inductively coupled plasma reactive ion etch (IcpRi process 'shows as a photoresist as a mask, and selectively #base 30 and sapphire substrate 20, thus forming the trench 4〇. #照第4C @ '(4) After the formation of the canal 40 is formed on the entire upper surface of the nitrogen 3〇a and the sapphire substrate 20a, forming a conductive base layer
50。因此,溝渠40内充滿導電支持層5〇。雖4 =層 層5〇可Μ由任何的非金屬物質組成,例如切^ 其有優㈣傳導性。但是,藉由使賴理蒸氣沉積法 學蒸氣沉積法或者fit 具有良好導 成,例如是銅金和鋁。 nΜ 可能進〜步形成 ,以加強兩者間 一層(圖中未顯示),包括Cr或金, 於氮化鎵基層30a和導電支持層5〇之間 的黏著性》 參照第4D圖,依照本發明 之雷射光束傳遞系統50. Therefore, the trench 40 is filled with a conductive support layer 5〇. Although 4 = layer 5 〇 can be composed of any non-metallic substance, for example, it has excellent (four) conductivity. However, it is well-formed by the Lai vapor deposition method vapor deposition method or fit, such as copper gold and aluminum. nΜ may be formed in a step to strengthen a layer between the two (not shown), including Cr or gold, adhesion between the gallium nitride base layer 30a and the conductive support layer 5〇. Referring to FIG. 4D, according to this Invented laser beam delivery system
TW3624PA/ OP06-QM-002-TW-00 丄叫228 、 =持層5G域後’當真空墊塊使藍寶石基板2Qa偏離 鎵基層30a時,將雷射光束照射在藍寶石基板上,使 ‘ 件該藍寶石基板20a由氮化铉其馬如八祕,从 .A u匕鎵基層30a分離出。該過程將 於以下詳細說明。 如同第4E圖所*,相對於導電支持層5〇之氮化鎵基 層30a之較低表面’係由氣化氫清洗,然後磨光,以使表 面光滑。 鲁 參照第4F圖,複數個接觸層60形成於氮化鎵基層 3〇a無遮蔽的表面上。每一接觸層6〇包括一界面層μ和 一接觸墊62,界面層61直接接觸該氮化鎵基層3〇a,且 接觸墊62位於界面層61之上。較令人滿意的是該界面層 61含有鈦元素或是鋁元素,並且該接觸墊含有Cr和Au元 - 素。 複數個接觸層6 0形成後,進行一切成小方塊的步驟 以將第4圖中的結構區分成個別的發光二極體裝置。這分 _ 割小方塊步驟可藉由不同的機制或是使用不同的化學方 法進行。第4圖顯示一發光二極體裝置的最終產物。 上述的步驟中,將藍寶石基板20a由氮化鎵基層30a 分離出的過程可以有效率的藉由本發明之雷射光束傳遞 系統所達成,關於此步驟之詳細說明可參照下文之第5圖 至第8圖。 第5圖為依照本發明一雷射光束傳遞系統之一示意 圖。 參照第5圖,本發明中之雷射光束傳遞系統包括一雷 TW3624PA/ 〇P〇6-QM.〇〇2-TW-00 16 1331228 射光束源210。因為波長為248nm之KrF準分子雷射光束, 和波長為193mn的ArF準分子雷射光束有一能量,該处旦 介於氮化鎵之3· 3eV帶間隙和藍寶石之丨〇. 〇eV帶間^b里 分子雷㈣束穿透藍寶石基板2Qa但是被吸收在氣 =鎵基層30a内。因此’兩種雷射光束都可當作本發明之 :雷射光束源210。然而’ KrF準分子雷射光束比二F準 ,子雷射光綠好,因為ArF準分切射光束可能 少被吸收於藍寶石基板20a内。 *雷射光束源210以脈衝波方式發出雷射光束。該雷射 光束之脈衝波能量可藉由種不同的衰減器(圖中未:田 精確地調整。 ‘ 大致上,因為由雷射光束源210發出之雷射光束之截 面的能量強度依照高斯分佈,因此提升光束點之能量強产 3句性是必要的。在此雷射総之—個截㈣義為^ 运射光束前進方向垂直的方向作切割所出現之戴面^ :束傳遞系統2〇°使用一光東均質機以提升能量 =:二=得雷射光束之整個截面之能量強度 曲線為均㈣’其中雷射光束於焦點 220。詳細結構及其功能描述如p i如束均質機 如同第5圖所示,為了調整光束均質機2 面間的距離,焦點平面上,已穿 “一占十 f、’則本發^ f射光束傳遞系統_更可包括 位於先束均質機⑽和焦點平面之間的—像 本發明之雷射光束傳遞系統咖更包括焦點;面之。 TW3624PA/ OP06-QM-002-TW-00 γη 1331228 光罩240,該焦點平面之位置藉由像場透鏡mo調整, 因此穿透光束均質;220之雷射*束截面的周圍於焦點平 面被遮蔽住。因此,被遮蔽的雷射光束之整個截面有完整 均勻的能量強度。 被遮蔽之雷射光束透過一成像透鏡25〇,照射到一晶 圓300之一單元照射區域。一旦晶圓3〇〇的整個表面依序 地被照射,則藍寶石基板20a由氮化鎵基層3〇a分離出。 第6A到6C係依照本發明之一光束均質機22〇之一透 籲視圖’一頂視圖和一側視圖。 依照本發明之一實施例,光束均質機22〇包括微透鏡 型之一第一複眼透鏡221、一第二複眼透鏡222和一聚光 透鏡223,其中第一複眼透鏡221係將雷射光源21〇發射 出雷射光束分割成複數個小光束,第二複眼透鏡222係用 以5周整複數個小光束之分散角,而聚光透鏡223則用以部 刀重童複數個小光束分散角被調整,因此,雷射光束之截 _ 面在焦點平面有均勻的能量強度曲線。 亦即是,本發明之光束均質機22〇係使用微透鏡型複 眼透鏡221和222。一微透鏡型複眼透鏡指的是有複數個 小透鏡的一單石透鏡,並且,透過使用半導體蝕刻步驟, 形成一透鏡板上排列成二維模式的小透鏡,以製造該微透 鏡型複眼透鏡。 因此,微透鏡型複眼透鏡221和222之小透鏡間沒有 界面’且相較於習知技藝之圓柱型複眼透鏡11〇和12〇之 光束穿透率’因為雷射光束的損失發生在介面,所以有較 TW3624PA/ OP06-QM-002-TW-00 18 1331228 « 1 高光束穿透率。純於f知技藝,因為使錄少,的光學元 件’因此本發明f射光束傳❹、統之整減束穿透率更加 提升。TW3624PA/ OP06-QM-002-TW-00 丄 228, = after holding the 5G domain, 'When the vacuum pad makes the sapphire substrate 2Qa deviate from the gallium base layer 30a, the laser beam is irradiated onto the sapphire substrate, so that The sapphire substrate 20a is separated from the .A u 匕 gallium base layer 30a by a tantalum nitride. This process will be described in detail below. As in Fig. 4E, the lower surface ' of the gallium nitride based layer 30a with respect to the conductive support layer 5 is cleaned by vaporized hydrogen and then polished to smooth the surface. Referring to Fig. 4F, a plurality of contact layers 60 are formed on the unmasked surface of the gallium nitride based layer 3?a. Each of the contact layers 6A includes an interfacial layer μ and a contact pad 62, the interfacial layer 61 directly contacts the gallium nitride based layer 3A, and the contact pad 62 is positioned over the interfacial layer 61. It is more desirable that the interface layer 61 contains a titanium element or an aluminum element, and the contact pad contains Cr and Au-based elements. After the plurality of contact layers 60 are formed, the steps of dividing into small squares are performed to separate the structures in Fig. 4 into individual light emitting diode devices. This _ dicing step can be performed by different mechanisms or using different chemical methods. Figure 4 shows the final product of a light emitting diode device. In the above steps, the process of separating the sapphire substrate 20a from the gallium nitride base layer 30a can be efficiently achieved by the laser beam delivery system of the present invention. For a detailed description of this step, refer to FIG. 5 to 8 picture. Figure 5 is a schematic illustration of a laser beam delivery system in accordance with the present invention. Referring to Fig. 5, the laser beam delivery system of the present invention comprises a Ray TW3624PA/〇P〇6-QM.〇〇2-TW-00 16 1331228 beam source 210. Because the KrF excimer laser beam with a wavelength of 248 nm and the ArF excimer laser beam with a wavelength of 193 nm have an energy, it is between the 3·3eV band gap of GaN and the sapphire. 〇eV band The molecular beam (4) beam penetrates the sapphire substrate 2Qa but is absorbed in the gas=gallium base layer 30a. Thus, both laser beams can be considered as the laser beam source 210 of the present invention. However, the KrF excimer laser beam is better than the two-F quasi-sub-field laser beam because the ArF quasi-split beam may be less absorbed in the sapphire substrate 20a. * The laser beam source 210 emits a laser beam in a pulse wave manner. The pulse wave energy of the laser beam can be adjusted by a different attenuator (the picture is not: the field is precisely adjusted. 'Substantially, because the energy intensity of the cross section of the laser beam emitted by the laser beam source 210 is Gaussian. Therefore, it is necessary to increase the energy of the beam point to produce three sentences. In this case, the laser beam is cut by the direction of the vertical direction of the beam. 〇°Using a light east homogenizer to boost energy=:2=The energy intensity curve of the entire section of the laser beam is (4) where the laser beam is at the focus 220. The detailed structure and its functional description are as pi as beam homogenizer As shown in Fig. 5, in order to adjust the distance between the planes of the beam homogenizer 2, the focus plane has been worn by "one ten ten," then the local beam emission system _ can include the first beam homogenizer (10) Between the focal plane and the focal plane - the laser beam delivery system of the present invention includes a focus; TW3624PA / OP06-QM-002-TW-00 γη 1331228 reticle 240, the position of the focal plane by the image field The lens mo is adjusted, so the light is transmitted Homogenization; the circumference of the beam* beam is shielded from the focal plane. Therefore, the entire section of the shielded laser beam has a complete and uniform energy intensity. The shielded laser beam is transmitted through an imaging lens 25 Going to a unit irradiation area of one wafer 300. Once the entire surface of the wafer 3 is sequentially irradiated, the sapphire substrate 20a is separated by the gallium nitride base layer 3A. 6A to 6C are in accordance with the present invention. A beam homogenizer 22 permeable view 'a top view and a side view. According to an embodiment of the invention, the beam homogenizer 22 includes a microlens type one of the first fly-eye lens 221 and a second fly-eye lens 222 and a concentrating lens 223, wherein the first fly-eye lens 221 splits the laser beam 21 〇 emitted by the laser beam into a plurality of small beams, and the second fly-eye lens 222 is used to spread the plurality of small beams in 5 weeks. The concentrating lens 223 is used to adjust the plurality of small beam dispersion angles of the knives, so that the intercepting surface of the laser beam has a uniform energy intensity curve at the focal plane. That is, the beam of the present invention. Homogenizer 2 2 〇 is a microlens type fly-eye lens 221 and 222. A microlens type fly-eye lens refers to a single stone lens having a plurality of small lenses, and is formed into a lens plate by using a semiconductor etching step. The lens of the mode is used to manufacture the microlens type fly-eye lens. Therefore, there is no interface between the lenslets of the microlens type fly-eye lenses 221 and 222, and the beam of the cylindrical type fly-eye lens 11〇 and 12〇 is compared with the prior art. The penetration rate 'because the loss of the laser beam occurs at the interface, so there is more than TW3624PA/ OP06-QM-002-TW-00 18 1331228 « 1 high beam penetration rate. Purely knowing the skill, because the recording is less, The optical element 'is therefore the transmissive beam of the present invention, and the uniform beam reduction rate is further improved.
根據本發明’因為微透鏡型複眼透鏡221和222係 用半導體仙步㈣製造,糾,以節距(piteh)代表小 透鏡的尺寸’可以縮小到幾百㈣.因此,如同第6D圖所 示’相較於習知技藝之圓柱型複眼透鏡110和120,本發 明之複眼透鏡221# 222具有雷射光束真正穿過之較有^ 的小透鏡’且因此可以將雷射光束分割成較多的小光束。 因此,如第7圖和第8圖所示,本發明之光束均質機 220係可大幅提升雷射光束截面能量強度的均句性,遠 過習知技藝之光束均質機1〇〇。 。 雖然本發明之複眼透鏡221和222節距之縮小可提升 雷射光束能量強度的均句性,但是若—小透鏡之節距太 小’則小魏H變得太短,讀於無法在 調整光束的大小,其中,胁平面上之複數料光 繼f:參,圖’詳細地,以下的公式應= 足夕彰:邛刀重瓦的小光束,且於焦點平面可有一定程度大 fLAi<a<fLA1 + fLA2 隹:中日LA1 良和-U分別為第一和第二複眼透鏡221和222 之… 為弟一和第二複眼透鏡221和222間的距離。 TW3624PA/ OP06-QM-002-TW-00 19 1331228 ———[(/L41+D-a] 截面的大小係與成比例。(其中, f*FL為聚光鏡223之焦距。)因為透鏡221 ’ 222和223之每 一個焦距皆不變,因此雷射光束焦點平面的截面大小係由 a決定,亦即是決定於第一複眼透鏡221和第二複眼透鏡 222間的距離。 若是小透鏡的焦距太短,因為a必須符合以上的公 式,則a之可調整範圍則有所限制,且因此^射光束截面 大小只能在一限度内調整。因此’考量焦點平面雷射光束 之大小以及能量強度均勻性’第一複眼透鏡221和第二複 眼透鏡222之節距必須最佳化。根據本發明之最佳實施 例’第一複眼透鏡和第二複眼透鏡中都具有〇. 5到2 〇ηπι 範圍的節距。 如同上述’習知技藝之圓柱型複眼透鏡11〇必需遠) 於微透鏡型複眼透鏡221 ’以將雷射光束分割成與微=舍 型複眼透鏡221有相同數目之小光束。再者,圓柱型目 透鏡110的每一小透鏡都必須增加一額外光學元件,,51 是於雷射光源和圓柱型複眼透鏡11〇之間增加一光束 望遠鏡。因為本發明之光束均質機22〇不需要這樣的 擴展望遠鏡,可因此減化製造此系統的步驟、減少生^ 本,以及增加在發光二極體市場的競爭力。此外,片 發明之系統比習知技藝使用較少的光學元件,使雷 可以通過,所以提昇整個光束穿透率,以及 ^ 4 TW3624PA/ OP06-QM-002-TW-00 2〇 寸間 1331228 量也因此增加。 依照本發明之一實施例,原始KrF準分子雷射光束截 面係為長10nm寬23nm之一長方形。因為第一複眼透鏡221 之每一個小透鏡有一 1. 〇15nm之節距,所以透過第一複眼 透鏡221,雷射光束被分割成大約230個小光束。 依照本發明之一實施例,第一和第二複眼透鏡221和 222都為長15nm寬30nm之一長方形。另一方面,依照本 發明之另一實施例,每一個複眼透鏡皆是具有一水平長度 春和一垂直長度之一長方形,每一複眼透鏡之水平長度和垂 直長度的比率,與雷射光源發出之雷射光束截面之水平長 度及垂直長度的比率相同。 同時,如第5圖所示,雖然聚光鏡223和焦點平面間 的距離頁透過像場透鏡230調整,然而,為了說明方便起 見,第6C圖中省略像場透鏡230。 穿透本發明光束均質機220之雷射光束的焦點平 面’有一大約為正方形的截面,並且,整個截面之能量強 度有大幅提升的均勻性,然而,與其它區域相比,戴面周 圍區域有較低的能量強度。因此,一光罩240裝置於焦點 平面,以遮蔽周圍區域,使得只有大約百分之八十的雷射 光束可能是有效的光束。 被遮蔽的雷射光束通過一成像透鏡250,照射到一晶 圓300的一單元照射區域。一但晶圓300的整個表面依序 被照射到’則藍寶石基板2〇a係由氮化鎵基層30a分離出。 雷射剝離技術為製造一垂直型發光二極體一不可缺 TW3624PA/ OP06-QM-002-TW-00 21 1331228According to the present invention, 'because the microlens type fly-eye lenses 221 and 222 are manufactured by the semiconductor fairy step (four), the pitch can be reduced to several hundred (four) by the pitch (piteh). Therefore, as shown in Fig. 6D 'The fly-eye lens 221# 222 of the present invention has a smaller lenslet that the laser beam actually passes through than the cylindrical fly-eye lenses 110 and 120 of the prior art, and thus can divide the laser beam into more Small beam of light. Therefore, as shown in Figs. 7 and 8, the beam homogenizer 220 of the present invention can greatly improve the uniformity of the energy intensity of the laser beam section, which is far superior to the conventional beam homogenizer. . Although the reduction of the pitch of the fly-eye lenses 221 and 222 of the present invention can improve the uniformity of the energy intensity of the laser beam, if the pitch of the lenslet is too small, the small Wei H becomes too short to be read. The size of the beam, where the complex light on the flank plane follows the f: reference, the graph 'detailedly, the following formula should be = 足夕彰: the small beam of the shovel heavy tile, and the focal plane can be somewhat large fLAi<; a < fLA1 + fLA2 隹: Chinese and Japanese LA1 Lianghe-U are the distance between the first and second fly-eye lenses 221 and 222, respectively, and the distance between the second and second fly-eye lenses 221 and 222. TW3624PA/ OP06-QM-002-TW-00 19 1331228 ———[(/L41+Da] The size of the cross section is proportional to (where f*FL is the focal length of the condenser 223.) because the lens 221 '222 and Each focal length of 223 is constant, so the cross-sectional size of the focal plane of the laser beam is determined by a, that is, the distance between the first fly-eye lens 221 and the second fly-eye lens 222. If the focal length of the lenslet is too short Since a must conform to the above formula, the adjustable range of a is limited, and therefore the beam cross-section size can only be adjusted within a certain limit. Therefore, the size of the focal plane laser beam and the uniformity of energy intensity are considered. The pitch of the first fly-eye lens 221 and the second fly-eye lens 222 must be optimized. According to a preferred embodiment of the present invention, both the first fly-eye lens and the second fly-eye lens have a range of 到. 5 to 2 〇ηπι The pitch is as long as the above-mentioned 'cylinder type fly-eye lens 11' is required to be far away from the microlens type fly-eye lens 221' to divide the laser beam into the same number of small beams as the micro-type compound eye lens 221. Furthermore, each of the lenslets of the cylindrical lens 110 must be provided with an additional optical element, and 51 is a beam telescope added between the laser source and the cylindrical fly-eye lens 11〇. Since the beam homogenizer 22 of the present invention does not require such an extended telescope, the steps of manufacturing the system can be reduced, the cost of the system can be reduced, and the competitiveness in the market of the light-emitting diodes can be increased. In addition, the system of the invention of the invention uses fewer optical components than the prior art, so that the lightning can pass, so the overall beam penetration rate is improved, and the amount of 1331228 is 2 TW3624PA/ OP06-QM-002-TW-00 It also increased. In accordance with an embodiment of the present invention, the original KrF excimer laser beam section is a rectangle having a length of 10 nm and a width of 23 nm. Since each of the small lenses of the first fly-eye lens 221 has a pitch of 〇15 nm, the laser beam is split into about 230 small beams through the first fly-eye lens 221. According to an embodiment of the present invention, the first and second fly-eye lenses 221 and 222 are each a rectangle having a length of 15 nm and a width of 30 nm. In another aspect, in accordance with another embodiment of the present invention, each of the fly-eye lenses has a rectangular shape having a horizontal length of spring and a vertical length, and a ratio of a horizontal length to a vertical length of each of the fly-eye lenses is emitted from the laser source. The ratio of the horizontal length to the vertical length of the laser beam section is the same. Meanwhile, as shown in Fig. 5, although the distance sheet between the condensing mirror 223 and the focal plane is adjusted by the field lens 230, the field lens 230 is omitted in Fig. 6C for convenience of explanation. The focal plane 'through the laser beam passing through the beam homogenizer 220 of the present invention has an approximately square cross section, and the energy intensity of the entire section has a substantially improved uniformity. However, compared with other regions, the area around the wearing surface has Lower energy intensity. Thus, a reticle 240 is placed in the focal plane to shield the surrounding area such that only about eighty percent of the laser beam may be an effective beam. The shaded laser beam is directed through an imaging lens 250 to a unit illumination area of a wafer 300. Once the entire surface of the wafer 300 is sequentially irradiated, the sapphire substrate 2〇a is separated by the gallium nitride base layer 30a. Laser stripping technology is indispensable for the manufacture of a vertical LED. TW3624PA/ OP06-QM-002-TW-00 21 1331228
I I 的技術,雖然雷射剝離技術觀點都已用來說明習知技藝和 本發明,但是本發明之雷射光束傳遞系統及其方法並不侷 限於雷射剝離技術,而可以應用於其它半導體製造步驟, 尤其是分離一晶圓上的一薄膜,以製造一裝置。根據本發 明,各種不同的薄膜,例如是,一複合半導體、銅、鋁、 金、聚合物等等都可被分離。 如上所述,依照本發明,整個光束點之能量強度的均 勻性增加,且因此加工產量也明顯地增加。此外,光束穿 • 透率增加,並且每單位時間產量也增加。另外,生產步驟 簡化、生產成本降低,且提高其在發光二極體市場的競爭 力。 綜上所述,雖然本發明已以一較佳實施例揭露如上, 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者,在不脫離本發明之精神和範圍内,當可作各種 之更動與潤飾。因此,本發明之保護範圍當視後附之申請 專利範圍所界定者為準。 TW3624PA/ OP06-QM-002-TW-00 22 1331228 【圖式簡單說明】 第1A圖繪示習知技藝一水平型發光二極體之一剖面 圖。 第1B圖繪示習知技藝一水平型發光二極體之一頂視 圖。 第2圖繪示一原始雷射光束之截面的能量強度曲線 圖。 第3A圖至第3C圖分別為習知技藝之一光束均質機之 ® 一透視圖、一頂視圖和一側視圖。 第3D圖繪示習知技藝之一光束均質機中所使用的一 圓柱型複眼透鏡的有效小透鏡。 第4A圖至4G圖顯示一垂直型發光二極體之組裝方法 之剖面圖。 第5圖為依照本發明一雷射光束傳遞系統之一示意 圖。 第6A圖至第6C圖為依照本發明一光束均質機的一透 ®視圖-頂視圖和-側視圖。 第6D繪示依照本發明一光束均質機中所使用一微透 鏡型複眼透鏡之有效小透鏡。 第7圖之照片及圖表顯示習知技藝雷射光束截面能 亮強度曲線圖,該雷射光束係於焦點平面通過一光罩。 第8圖之照片及圖表顯示依照本發明藝雷射光束截 面能亮強度曲線圖,該雷射光束係於焦點平面通過一光 罩。 TW3624PA/ QP06-QM-002-TW-00 23 1331228 【主要元件符號說明】 2 0 :餐賀石基板 30 :連續氮化鎵基層 31 :氮化鎵緩衝層 32 : N型氮化鎵層 33 :活化層 34 : P型氮化鎵層 40 :溝渠 50 :導電支持層 60 :接觸層 61 :界面層 62 :接觸墊 100 :習知技藝之光束均質機100 110,120 :圓柱型複眼微透鏡 200 :雷射光束傳遞系統 210 :雷射光源 220 :光束均質機 221 :第一複眼透鏡 222 :第二複眼透鏡 223 :聚光透鏡 24 TW3624PA/ OP06-QM-002-TW-00 1331228 i » :像場透鏡 :光罩 :成像透鏡 :晶圓 TW3624PA/ QP06-QM-002-TW-00 25The technology of II, although the laser stripping technology has been used to illustrate the prior art and the present invention, the laser beam delivery system and method of the present invention are not limited to laser stripping technology, but can be applied to other semiconductor manufacturing. The step, in particular, is to separate a film on a wafer to make a device. In accordance with the present invention, various films, such as a composite semiconductor, copper, aluminum, gold, polymers, and the like, can be separated. As described above, according to the present invention, the uniformity of the energy intensity of the entire beam spot is increased, and thus the processing yield is also remarkably increased. In addition, the beam penetration rate increases and the yield per unit time increases. In addition, production steps are simplified, production costs are reduced, and their competitiveness in the market for light-emitting diodes is increased. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. TW3624PA/ OP06-QM-002-TW-00 22 1331228 [Simple Description of the Drawing] Fig. 1A is a cross-sectional view showing a horizontal type of light-emitting diode of the prior art. Fig. 1B is a top plan view showing a horizontal type of light-emitting diode of the prior art. Figure 2 is a graph showing the energy intensity of a section of an original laser beam. Figures 3A through 3C are respectively a perspective view, a top view and a side view of a beam homogenizer of the prior art. Fig. 3D is a diagram showing an effective lenslet of a cylindrical fly-eye lens used in a beam homogenizer of the prior art. 4A to 4G are cross-sectional views showing a method of assembling a vertical type light emitting diode. Figure 5 is a schematic illustration of a laser beam delivery system in accordance with the present invention. 6A through 6C are a perspective view - a top view and a side view of a beam homogenizer in accordance with the present invention. Fig. 6D shows an effective lenslet of a microlens type fly-eye lens used in a beam homogenizer according to the present invention. The photographs and graphs of Fig. 7 show a graph of the intensity of the cross section of a conventional laser beam, which is passed through a mask at the focal plane. The photographs and graphs of Fig. 8 show a plot of the intensity of the cross-section of the laser beam in accordance with the present invention, which is passed through a reticle at the focal plane. TW3624PA/ QP06-QM-002-TW-00 23 1331228 [Description of main component symbols] 2 0 : Rare stone substrate 30: continuous gallium nitride base layer 31: gallium nitride buffer layer 32: N-type gallium nitride layer 33: Activation layer 34: P-type gallium nitride layer 40: trench 50: conductive support layer 60: contact layer 61: interface layer 62: contact pad 100: a conventional beam homogenizer 100 110, 120: cylindrical compound-eye microlens 200 : Laser beam delivery system 210 : Laser source 220 : Beam homogenizer 221 : First fly-eye lens 222 : Second fly-eye lens 223 : Condenser lens 24 TW3624PA / OP06-QM-002-TW-00 1331228 i » : Image Field Lens: Photomask: Imaging Lens: Wafer TW3624PA/ QP06-QM-002-TW-00 25
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