TWI232016B - Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure - Google Patents

Abstract

A GaN vertical light emitting device structure and a method of separating a substrate and a thin film thereon in the GaN vertical light emitting device (LED). The structure comprises a metal reflector for reflecting a light. The method comprises the steps: providing a laser array over the substrate wherein a laser light emitted by the laser array may at least partially be transparent to the substrate and its energy may be absorbed by the thin film; irradiating the thin film through the substrate; and then separating the substrate and the thin film.

Description

號 931fn9Qq 五、發明說明（1) 發明所屬之技術領域】 =發：係關於氮化鎵系發光二極體（led 中；：=:於一垂直氮化嫁系發光二極體結構及 『傅甲基材與溥膜分離之方法。 先前技術】 菸氺體發光二極體（LED)之發展已有數十年歷史，且 因ΐ多年來LED的發展方向大致皆在於發光ίί 辛=光效率提升之路上，散熱問題-直為- 之孰I法有效：pi，當發光效率不斷上升之際，若光所生 /、，、; ί有效排除，LED仍將陷於無法正常工作之境。因 在LED發展史中j =升U效率及排除熱為主。 Π:ί= 傳：導熱性不佳之印刷電路板，俾使晶粒 得提^ ^ H藉金屬排除。LED結構内之排熱性亦 M , ^ M. A 石上雖適於成長氮化鎵（GaN)系LED結 ί成：7 1二佳之非導體材料，因此-般常先藉由 i後貼附3以另=構，之後再將其脫離該LED結構，並在 之後貼附以另一導献性赵杜 圖及第- B圖中。由於上基材，其示意說明於第- A 薄膜於直上，冬各/展$ 寶石基材功能僅在形成多層 :ί ΐ: i: ΐ 缚臈皆形成後需予移除，故在此稱 ί?η!:Α”，所示者為-垂直發光元件： 、、产美封W:其* Γ成製造階段中。圖中’首先先以一過 Τ 1 ^ « Γ r 土反成溥膜結構層，薄膜結構包含η型氮 化紅糸層15、主動層14、Ρ型氮化鎵系層13及金屬基材 1232016 案號 93101293No. 931fn9Qq V. Description of the invention (1) The technical field to which the invention belongs] = Hair: about gallium nitride based light emitting diode (led ;: =: in a vertical nitrided light emitting diode structure and "Fu methyl group" Method for separating materials from cymbals. Prior technology] The development of fumes and light emitting diodes (LEDs) has a history of decades, and because of the development direction of LEDs over the years, it is generally about emitting light. On the road, the heat dissipation problem-Straightforward-of the I method is effective: pi, when the luminous efficiency continues to rise, if the light produced by / ,,,;; is effectively eliminated, the LED will still be trapped in a situation where it cannot work properly. In the history of development, j = U efficiency and heat rejection. Π: ί = pass: printed circuit boards with poor thermal conductivity, so that the crystal grains can be improved ^ ^ H is removed by metal. The heat dissipation in the LED structure is also M, ^ M. A Although it is suitable for growing gallium nitride (GaN) LEDs on the stone, it is a non-conducting material with a good quality of 7 1 2. Therefore, it is often common to attach 3 to another structure after i, and then Get rid of the LED structure, and then attach another inductive Zhao Dutu and Figure-B. Due to the upper substrate, its Schematic description of the first-A film on the straight, Dong Ge / Exhibition $ gemstone base function only needs to be removed after forming multiple layers: ΐ i: i: ΐ 臈 臈 are formed, so it is called ί? Η!: Α ", Which is shown-vertical light-emitting element: ,, production of US-made seal W: its * Γ into the manufacturing stage. 'First in the picture, first pass a T 1 ^« rs r soil into a film structure layer, film structure Including n-type red hafnium nitride layer 15, active layer 14, P-type gallium nitride-based layer 13, and metal substrate 1232016 case number 93101293

Λ_I 曰 修正 五、發明說明（2) 11，其一端更有p型電極17形成於該金屬基材11上，因過 渡基材1 6之存在係欲使後續製程有一支撐體，故可於此垂 直發光元件結構完成後移除之，如第一 B圖所示。之後， 將整個垂直發光元件結構1 0加以1 80度翻轉即可得如第一 B 圖之結構，第一 B圖其中，過渡基材16,先予去除，之後一 η型電極18’再製作於η型氮化鎵系層15,上，如此便完成整 個垂直發光元件結構1 0 ’之製造。 再請參閱第一 Β圖，此時整個垂直發光元件結構1 〇，之 上下側得分別貼附以金屬電極1 7’（ ρ型電極）及1 8,（過 電極）’由於整個垂直發光元件結構1〇，之各層無側向結 構’故稱作垂直結構L E D。如此形成之結構不僅得改善上 述排熱問題，其發光面積亦較傳統者為大，因其二電°極皆 不設於結構側向上；因此，側向出射光面積不需減小，且 因透明形式形成於LED結構兩側上而得讓光線穿透。 如第一 C圖所示，其為第一 A圖至第一 β圖移除過渡基材 後之氮化鎵系垂直發光元件結構1〇,，。主動層14，，所發之 光有一部份往p型氮化鎵系層1 3 ”行進，另有一部份往〇型 乳化鍊糸層1 5 (如圖中前頭所示），若η型電極1 β" 一側為 所欲之光出射處’則往ρ型電極1 7π之光形同浪費。 關於上述垂直結構之過渡基材與上方薄膜層間之分 離’現已有數種技術被提出，如先以藍寶石作為基材（過 渡基材）而進行結構各層之形成，該過渡基材與其上方之ρ 塑半導體材料層或η型半導體材料層間製作以一脆性結 構，並藉力使之分離。亦有習用技術以雷射光提供能量而 分離過渡基材與其上方之薄膜，此時該上方薄膜得吸收該Λ_I Amendment V. Description of the invention (2) 11, a p-type electrode 17 is formed on the metal substrate 11 at one end. The existence of the transition substrate 16 is intended to provide a support for subsequent processes, so it can be used here. After the vertical light emitting element structure is completed, it is removed, as shown in FIG. 1B. After that, the entire vertical light-emitting element structure 10 is turned by 80 degrees to obtain the structure as shown in the first B diagram. In the first B diagram, the transition substrate 16 is removed first, and then an n-type electrode 18 ′ is fabricated. On the n-type gallium nitride-based layer 15, the manufacturing of the entire vertical light-emitting element structure 10 'is thus completed. Please refer to FIG. 1B again. At this time, the entire vertical light-emitting element structure is 10, and the upper and lower sides must be attached with metal electrodes 17 ′ (ρ-type electrodes) and 18 (over-electrodes). Structure 10, each layer has no lateral structure, so it is called a vertical structure LED. The structure thus formed not only improves the above-mentioned problem of heat removal, but also has a larger light emitting area than the traditional ones, because the two electric poles are not set on the side of the structure; therefore, the area of lateral light emission does not need to be reduced, and because Transparent forms are formed on both sides of the LED structure to allow light to penetrate. As shown in FIG. 1C, it is a gallium nitride-based vertical light-emitting device structure 10, from the first A to the first β diagrams with the transition substrate removed. For the active layer 14, a part of the emitted light travels toward the p-type gallium nitride-based layer 13 ", and another part goes to the 0-type emulsification chain layer 15 (as shown in the front of the figure). The electrode 1 β " side is where the light exits as desired ', and the light toward the ρ-type electrode 17 7π is wasted. Regarding the separation between the transition substrate of the vertical structure and the upper film layer', several technologies have been proposed. For example, if sapphire is used as the substrate (transition substrate) to form the layers of the structure, the transition substrate and the p-type semiconductor material layer or n-type semiconductor material layer above it are made into a brittle structure and separated by force. There are also conventional techniques that use laser light to provide energy to separate the transition substrate from the film above it. At this time, the upper film must absorb the

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第7頁 1232016 ^ --- 案號931012⑽_年月日____ 五、發明說明（3) 雷射光能量，並因融解而與過渡基材分離，如美國早期公 開專利申請案US20030150843。在該申請案中（請參閱第二 圖）’ 一線狀雷射光2 3對過渡基材2 2上薄膜層2 1進行掃 描’薄膜層2 1吸收雷射光2 3能量後便可因其與基材之接面 2 5處融解而與過渡基材2 2分離，其中過渡基材2 2與薄膜層 2 1在掃描時之移動方向如圖中所示，S為一次掃描時之掃 描區’ Μ為一次掃描之掃描寬度，t為薄膜層2 1之厚度，其 中掃描寬度Μ之值近乎等於或小於厚度t值。Page 7 1232016 ^ --- Case No. 931012⑽_ 年月 日 ____ V. Description of the invention (3) Laser light energy, which is separated from the transition substrate due to melting, such as the US early public patent application US20030150843. In this application (see the second figure) 'a linear laser light 2 3 scans the thin film layer 2 1 on the transition substrate 2 2' the thin film layer 2 1 absorbs the laser light 2 3 energy and can The material interface 25 melts and separates from the transition substrate 22, where the transition direction of the transition substrate 22 and the film layer 21 during scanning is shown in the figure, and S is the scanning area during one scan. Is the scanning width of one scan, and t is the thickness of the thin film layer 21, where the value of the scanning width M is approximately equal to or less than the thickness t.

然而’該篇申請案仍有其技術上之缺點。例如，整層 薄膜在線狀光源掃描過後，薄膜上各處之融解程度已不相 同’因此’在將過渡基材2 2脫離之時，過渡基材2 2與薄膜 層2 1間之各處受剝離力不夠均勻。再者，線狀雷射掃描進 行時有熱應力問題的存在，該不均勻熱應力亦使剝離效果 不盡理想，且有膜層破裂之虞。 鑑於習用氮化鎵系垂直結構發光二極體（LED)元件結構及 其製造方法上的缺點，一種在製造時能避免上述問題之氮 化鎵系垂直發光二極體（LED)之結構及該結構上一基盥 一薄膜分離之方法確有提出的必要。 /、However, this application still has its technical disadvantages. For example, after the entire layer of film is scanned by a linear light source, the degree of melting on the film is not the same. Therefore, when the transition substrate 22 is detached, the transition substrate 22 and the film layer 21 are affected everywhere. The peeling force is not uniform enough. Furthermore, there is a problem of thermal stress during the linear laser scanning. This uneven thermal stress also makes the peeling effect unsatisfactory, and there is a possibility that the film layer is broken. In view of the shortcomings of the conventional GaN-based vertical structure light-emitting diode (LED) element structure and its manufacturing method, a GaN-based vertical light-emitting diode (LED) structure and the It is necessary to put forward a method of separating a substrate and a membrane on the structure. /,

直發 分離Straight hair

本發明之主要目的即在於降低垂 夂4時薄膜與一過渡基材間加以雷射 力及融解程度問題。 目的，本發明之第一態樣在於以一雷射 源，且該雷射陣列照射範圍大小與待融 1232016^ 93101M-, 一 年月曰一修正_ 五、發明說明⑷ 開之薄膜與過渡基材間接觸面近乎相等。 當該雷射陣列之電源一經開啟，陣列中各雷射能量同 時為薄膜面所吸收，薄膜面各處融解程度相當而均勻與過 渡基材分離，且薄膜面不存在熱應力問題而更得均勻脫離 與過渡基材間之貼附。 此外，由於雷射陣列對整個薄膜的照射時間較短，因 此製程時間得以縮短。 本發明之第二態樣為具較佳發光效率之氮化鎵系垂直 發光二極體70件結構，一金屬反射層提供其中以行光反 射，以得較大之光輸出效率。 【實施方式】 針對垂直發光二極體（LED)結構，本發明提出一 效之製造方法。利用該方法，垂直蛀 之過渡基材與其上方薄膜層間得石為材料 程時間。 又均勻分離，且能減少製 請參閱第三圖所示之製程示意圖 34包含過渡基材31及上方之一薄棋：m所示結構 細節並未顯示圖_，其應、包含有‘32’其中溥膜結構之 ^ 、卜 土虱化鎵系層、皂動 層、P型氮化鎵系層及金屬基材等，f 莉 極。該兩材料3丨，3 2需加以分離，分=，之P型電 31上方提供以一雷射陣列33,並藉由離^之//為過渡基材 田％干n 稽由雷射陣列拇祝此旦· 由於雷射陣列佈於整個薄膜層3 2之上方，棱仏此里， 動即可使整個薄膜層32受到照射。在:構34不需移 意適合得均句投射於接面3 5上者，如 lx η陣列、3χ η陣列The main purpose of the present invention is to reduce the problems of the laser force and the degree of melting between the film and a transition substrate at 4 o'clock. Purpose, the first aspect of the present invention is to use a laser source, and the irradiation range of the laser array is about to be melted. 1232016 ^ 93101M-, one year, one month, and one amendment _ V. Description of the invention The contact surfaces between the materials are almost equal. Once the power of the laser array is turned on, the laser energy in the array is absorbed by the film surface at the same time, the melting degree of the film surface is equivalent and separated from the transition substrate uniformly, and the film surface is more uniform without thermal stress. Adhesion between release and transition substrate. In addition, because the laser array has a shorter irradiation time on the entire film, the process time can be shortened. The second aspect of the present invention is a 70-gallium-nitride-type vertical light-emitting diode structure with better luminous efficiency. A metal reflective layer is provided to reflect light in a row to obtain greater light output efficiency. [Embodiment] The present invention proposes an effective manufacturing method for a vertical light emitting diode (LED) structure. Using this method, the material between the transition substrate of the vertical transition and the film layer above it is the material time. It is evenly separated and can reduce the production. Please refer to the process diagram shown in the third figure. 34 includes the transition substrate 31 and a thin chess above it: the structural details shown in m are not shown in the figure, and it should include '32'. Among them, the structure of the gallium membrane, the gallium-based gallium-based layer, the soap layer, the P-type gallium nitride-based layer, and the metal substrate, etc. The two materials 3 丨 and 3 2 need to be separated, and a laser array 33 is provided above the P-type electric 31, and the laser beam array is used as the transition substrate. Since the laser array is arranged above the entire thin film layer 32, the entire thin film layer 32 can be irradiated by moving here. In: the structure 34 does not need to be shifted, so that even sentences are projected on the junction 3 5 such as lx η array and 3χ η array

雷射陣列33雖w lx 3雷射陣列33為之：J眘圖$中 查摘厶馄始6 ^ ^ ^ < o c 1 一八幵/式實可為任 等。 當雷射陣列3 3之電源一開啟，雷射陣列3 3便發射出 量。由於雷射陣列3 3之提供係用於使過渡基材3丨及薄膜 3 2間接面3 5融解，因此雷射陣列之雷射光的波長選擇以 該雷射光能為該接面35吸收並融解、且能穿透基材為原 則’如當該薄膜層32為η型氮化鎵（GaN)系層時，雷射 波長為約3 2 7奈米。 為使過渡基材3 1與薄膜層3 2間接面3 5得均勻吸收雷 陣列33發出之能量，雷射陣列之設計當以能使整個接面 之能量吸收圖案為均勻為原則。 在一實施例中，過渡基材3丨與雷射陣列 一光柵面（數道狹縫之組合，未示於圖中）， 源變成長條狀。當長條狀雷射光投射於過渡 薄膜層3 2上能量吸收模型應以如第四圖所示 如第四圖所示，薄膜層42接面45上有數 案，即1st，2nd...... ·，nth。該等條狀能量吸 lst’2nd……·，nth係由其上方之光柵面之諸 其中每一道條狀區域1st，2nd……·，nth緊密 域1 s t ’ 2 n d ·…·，n t h内能量吸收強度近乎均 區域1st，2nd...... ·，nth之吸收能量強度亦近 在此另當提出的是，該光栅面得以其它光學 要能使投射於薄膜42上之雷射光均勻分佈即 第五圖所不為另一能量吸收強度分佈模 膜層5 2上有複數道吸收圖案，該吸收圖案與 同，此時亦得令薄膜層52表面均勻吸收能量 3 3之間得加 藉以使雷射 基材31上後 者為原則。 道能量吸收 收圖案 縫隙所形成 相接，每一 勻相等，且 乎均勻相等 零件代替， 可。 型實施例， 第四圖者不 而均勻與過 圖 各 〇 只 薄 渡 能 層 使 光 射 35 以 光 1232016 n ----- 案號931〇〗？q) 五、發明說明（6) f ^刀離’當然任何其它能使薄膜層5 2表面均勻吸收之強 X吸收模型實施例皆可為之。 *欲達成均勾分佈的能量吸收強度均勻分佈模型，雷射 ^萬再加以處理方能達成，如上述之加入光柵面；此外， 愛射光之其它特性亦得因加調整而更均勻分佈，如調整各 二之投射焦聚等。總之’最後的薄膜吸收雷射光強度 =松型以儘量近乎第六圖所示者為原則，其中第六圖表 下/膜接面之X軸與y軸上各點之吸收能量強度相同。 八蚀相車父於習用技術’由於本發明投射於薄膜接面之能量 i八均^ ’因此整個薄膜接面上無不均勻熱應力問題’亦 了刀離則雷射照射完成時間點不同引發之分離不均勻問題 、$本發明七出之雷射陣列能量源設計堪為一足以有效 解決習用技術缺點之發明。再者，由於薄膜面上的雷射照 腔不茜如習用技術般以掃描方式為之，而係一次對整個薄 、面進行照射，因此製程時間得以大大縮短。Although the laser array 33 is w lx 3, the laser array 33 is as follows: J Shentu $ zhong Searching for the beginning 6 ^ ^ ^ o c 1 幵 式 / type can be arbitrary. As soon as the power of the laser array 33 is turned on, the laser array 33 emits an amount. Since the laser array 3 3 is provided for melting the transition substrate 3 丨 and the thin film 3 2 and the indirect surface 3 5, the wavelength of the laser light of the laser array is selected to be absorbed and melted by the laser light energy for the interface 35. The principle is that it can penetrate the substrate. For example, when the thin film layer 32 is an n-type gallium nitride (GaN) -based layer, the laser wavelength is about 3 2 7 nm. In order to make the transition substrate 31 and the indirect surface 35 of the thin film layer 3 2 evenly absorb the energy emitted by the laser array 33, the design of the laser array should be based on the principle that the energy absorption pattern of the entire interface is uniform. In one embodiment, the transition substrate 3 and the laser array have a grating surface (a combination of several slits, not shown in the figure), and the source becomes a long strip. When the long laser light is projected on the transition film layer 32, the energy absorption model should be as shown in the fourth figure, as shown in the fourth figure, there are several cases on the interface 45 of the thin film layer, that is, 1st, 2nd ... .. ·, nth. These strip-shaped energy absorptions lst'2nd ... ,, nth are from each of the stripe regions 1st, 2nd ..., the nth compact region 1st '2nd ... The energy absorption intensity is nearly 1st, 2nd ..., and the absorption energy intensity of nth is also here. It is also proposed that the grating surface can make the laser light projected on the film 42 uniform by other optics. The distribution, that is, the fifth figure, is not another energy absorption intensity distribution. There are multiple absorption patterns on the film layer 52. The absorption patterns are the same. At this time, the surface of the thin film layer 52 must be uniformly absorbed between the energy 3 and 3. The principle is to make the latter on the laser base material 31. Track energy absorption closes the pattern formed by the gaps, each one is equal, and the parts are replaced by equal parts. In the embodiment, the fourth picture is not uniform and the picture is too thin. Only a thin layer of energy makes the light radiate 35 to light 1232016 n ----- case number 931〇? q) 5. Description of the invention (6) f ^ knife off 'Of course, any other strong X absorption model embodiment that can uniformly absorb the surface of the film layer 52 can be used. * If you want to achieve a uniform distribution of the energy absorption intensity uniform distribution model, the laser can be processed before it can be achieved, as described above, the grating surface is added; in addition, other characteristics of the laser light must be adjusted to be more uniformly distributed, such as Adjust the focus of each projection. In short, the final film absorbs laser light intensity = the principle of looseness is as close as possible to the one shown in the sixth figure, where the X-axis and the y-axis of the sixth graph have the same absorbed energy intensity at each point on the y-axis. The eclipse phase driver used the conventional technique 'Because the energy projected on the film interface of the present invention is equal to ^', so there is no uneven thermal stress problem on the entire film interface. 'It is also caused by different laser radiation completion time points. The problem of non-uniform separation and the laser array energy source design of the invention can be an invention that can effectively solve the shortcomings of conventional technology. In addition, because the laser cavity on the film surface is not scanned in the conventional way, and the entire thin surface is irradiated at one time, the process time can be greatly shortened.

第11頁 ?〇第七圖所示為本發明之氮化鎵系垂直二極體元件結構 ^ ’該結構包括有多層薄膜結構與p型電極7 7、η型電極 時’ ^中—金屬反射層72製作於其中。當主動層74發光 部部份光往Ρ型氮化鎵系層73行進，金屬反射層72對該 構1光加以反射，使反射光往η型氮化鎵系層7 5—側往結 η /外出射，因此發光效率受到提升。此外，該結構7 0之 成1氮化鎵系層7 5與該ρ型氮化鎵系層7 3之位置可互換，構 發明之另一實施例（未顯示）。至於金屬反射層72之材 者 八j選為與金屬基材71貼附匹配度佳、且反射能力佳 其中鋼鎢合金（CuW)可為金屬基材，此時銀（Ag)、鋁 1232016 案號 93101293 Λ_Ά 曰 修正 五、發明說明（7) (A 1 )、铑（Rh )可為金屬反射層7 2材料。 本發明之基本實施例已詳述於上，熟習該項技術者得 藉由對上述實施例之閱讀及了解而推衍出各種不同實施例 。例如，雷射陣列的大小及所發出的雷射光束數量得加改 變、薄膜接面之強度吸收分佈模型可加改變、光栅面得以 其它光學零件替代、雷射光源與薄膜材料之組合亦得做改 變等。總之，凡得藉由本發明之發明說明輕易推導出之實 施例皆屬於本發明之精神範圍，而該等範圍定義於後述申 請專利範圍一節中。Page 11? The seventh figure shows the structure of the gallium nitride-based vertical diode device of the present invention ^ 'This structure includes a multilayer thin film structure and a p-type electrode 7 7, n-type electrode' ^ Medium-metal reflection A layer 72 is made therein. When a part of the light from the light emitting portion of the active layer 74 travels toward the P-type gallium nitride-based layer 73, the metal reflective layer 72 reflects the light of the structure 1 so that the reflected light is directed toward the n-type gallium nitride-based layer 7 5—side toward the junction η / Outgoing, the luminous efficiency is improved. In addition, the positions of the gallium nitride-based layer 75 of the structure 70 and the p-type gallium nitride-based layer 73 are interchangeable, and another embodiment of the invention (not shown) is constructed. As for the material of the metal reflective layer 72, the eighth j is selected to have a good adhesion with the metal substrate 71, and the reflection ability is good. Among them, the steel tungsten alloy (CuW) can be a metal substrate. At this time, the silver (Ag) and aluminum 1232016 cases No. 93101293 Λ_Ά Amendment V. Description of the invention (7) (A 1), rhodium (Rh) may be the material of the metal reflective layer 7 2. The basic embodiments of the present invention have been described in detail above. Those skilled in the art can derive various embodiments by reading and understanding the above embodiments. For example, the size of the laser array and the number of laser beams emitted can be changed, the intensity absorption distribution model of the film interface can be changed, the grating surface can be replaced by other optical parts, and the combination of the laser light source and the film material can also be made Change etc. In short, any embodiment that can be easily deduced from the invention description of the present invention belongs to the spirit scope of the present invention, and these scopes are defined in the patent application scope section described later.

第12頁 1232016 案號 93101293 年月曰 修正 圖式簡單說明 【圖式簡單說明】 第一 A及一 B圖為一基材與一薄膜層加以分離之習用製程示 意圖； 第一 C圖為習用技術之垂直發光二極體結構示意圖； 第二圖為習用技術對一基材與一薄膜層加以分離之製程示 意圖； 第三圖為本發明中一以雷射陣列分離薄膜與基材之製程實 施例示意圖； 第四圖為本發明中一薄膜層上吸收能量強度之分佈模型實 施例示意圖； 第五圖為本發明中另一薄膜層上吸收能量強度之分佈模型 實施例示意圖； 第六圖為本發明中薄膜接面各點上理想吸收能量強度之分 佈模型示意圖；及 第七圖為本發明之氮化鎵系垂直發光二極體結構之示意 圖。 10 垂直發光元件結構 11 過渡基材 13 p型氮化鎵系層 14 主動層 15 η型氮化鎵系層 1 6 金屬基材 1 0 ’，1 0 ’ ’ 垂直發光元件結構Page 12 1232016 Case No. 93101293 Simple description of the revised drawing [Simplified illustration of the drawing] The first A and B diagrams are schematic diagrams of a conventional process for separating a substrate from a thin film layer; the first C diagram is a conventional technique Schematic diagram of the structure of a vertical light-emitting diode; the second diagram is a schematic diagram of a conventional process for separating a substrate from a thin film layer; the third diagram is an embodiment of a process for separating a film and a substrate by a laser array in the present invention The fourth diagram is a schematic diagram of an embodiment of a distribution model of absorbed energy intensity on a thin film layer in the present invention; the fifth diagram is a schematic diagram of an embodiment of a distribution model of absorbed energy intensity on another thin film layer in the present invention; the sixth diagram is this The schematic diagram of the distribution model of the ideal absorbed energy intensity at each point of the thin film junction in the invention; and the seventh diagram is a schematic diagram of the gallium nitride-based vertical light emitting diode structure of the invention. 10 Vertical light-emitting element structure 11 Transition substrate 13 p-type gallium nitride-based layer 14 Active layer 15 η-type gallium nitride-based layer 1 6 Metal substrate 1 0 ′, 1 0 ’′ Vertical light-emitting element structure

第13頁 1232016 案號 93101293 Λ_ 曰 修正 圖式簡單說明 1 Γ , 1 Γ 13’，13’ 14? , 14J 15’，15’ 16, , 16, 過渡基材 P型氮化鎵系層 主動層 η型氮化鎵系層 金屬基材 1 7，1 7 ’，1 7 ’ ’ ρ型電極 1 8 ’，1 8 ’ ’ η型電極 21 薄膜層 2 2 過渡基材 2 3 雷射光 2 5 接面 31 過渡基材 32 薄膜 33 雷射矩陣光源 35 基材與薄膜層之接面 42 薄膜 4 5 基材與薄膜間接面 52 薄膜 5 5 基材與薄膜間接面 70 氮化鎵系垂直發光二極體結構 71 金屬基材 7 2 金屬反射層 7 3 ρ型氮化鎵系層 7 4 主動層Page 13 1232016 Case No. 93101293 Λ_ Brief description of the modified diagram 1 Γ, 1 Γ 13 ', 13' 14?, 14J 15 ', 15' 16,, 16, Active substrate of P-type GaN-based transition layer η-type gallium nitride-based layer metal substrate 1 7, 17 ', 17' 'ρ-type electrode 1 8', 1 8 '' η-type electrode 21 thin film layer 2 2 transition substrate 2 3 laser light 2 5 contact Surface 31 transition substrate 32 film 33 laser matrix light source 35 interface between substrate and film layer 42 film 4 5 substrate and film indirect surface 52 film 5 5 substrate and film indirect surface 70 gallium nitride-based vertical light emitting diode Body structure 71 metal substrate 7 2 metal reflective layer 7 3 p-type gallium nitride system layer 7 4 active layer

第14頁 1232016 案號 93101293 曰 修正 圖式簡單說明 7 5 η型氮化鎵系層 77 ρ型電極 7 8 η型電極Page 14 1232016 Case No. 93101293 Modification Brief description of the drawing 7 5 η-type gallium nitride-based layer 77 ρ-type electrode 7 8 η-type electrode

第15頁Page 15

Claims (1)

1232016 案號 93101293 曰 修正 六、申請專利範圍 1. 一種分離一 材及一晶體 藍寶石基材 提供一 陣列發出之 為該晶體薄 以該雷 層；及 分開該 2. 如申請專利 二極體元件 中一光栅形 極體陣 其中該 射二 源； 度。 3·如申 二極 中該 膜層 4 _如申 二極 中該 請專利 體元件 照射晶 之接面 請專利 體元件 雷射陣 5. —種分離一 基材之上方 氮化鎵系垂直發光二極體元件中一藍寶石基 薄膜層之方法，其中該晶體薄膜層貼附於該 之上，該方法至少包含下列步驟： 雷射陣列於該藍寶石基材之上方，且該雷射 雷射光得至少部份穿透該藍寶石基材、且能 膜層吸收者； 射陣列透過該藍寶石基材而照射該晶體薄膜 藍寶石基材與該晶體薄膜層。 範圍第1項所述之分離一氮化鎵系垂直發光 中一藍寶石基材及一晶體薄膜層之方法，其 成於該雷射陣列與該藍寶石基材之間，將雷 列的各別光源合成有均勻分佈能力之面光 光栅可與該藍寶石基材平面之邊緣形成一角 範圍第1項所述之分離一氮化鎵系垂直發光 中一藍寶石基材及一晶體薄膜層之方法，其 體薄膜層係照射在該藍寶石基材與該晶體薄 上。 範圍第1項所述之分離一氮化鎵系垂直發光 中一藍寶石基材及一晶體薄膜層之方法，其 列為任意陣列形式之雷射光。 基材與一薄膜層之方法，其中該薄膜位於該 ，該方法至少包含下列步驟：1232016 Case No. 93101293 Amendment VI. Patent Application Scope 1. A separation of a material and a crystalline sapphire substrate to provide an array issued for the crystal thin to the thunder layer; and to separate the 2. As in the application for a patent diode element A grating-shaped polar array in which the two sources of radiation; degrees. 3. · The film layer in Rushen Diode 4 _Please apply for patented body element to irradiate the junction of the crystal in Shen Diode, please patent the body element laser array 5. —A kind of vertical gallium nitride light emitting above a substrate A method for a sapphire-based thin film layer in a diode element, wherein the crystalline thin film layer is attached to the method, the method includes at least the following steps: a laser array is above the sapphire substrate, and the laser light is obtained by Those that at least partially penetrate the sapphire substrate and can be absorbed by the film layer; the radiation array irradiates the crystalline sapphire substrate and the crystalline film layer through the sapphire substrate. The method for separating a sapphire substrate and a crystalline thin film layer in a gallium nitride-based vertical light emitting device described in the first item of the scope is formed between the laser array and the sapphire substrate, and separates the respective light sources of the laser array. A method for synthesizing a surface light grating with uniform distribution ability and forming an angle range with the edge of the plane of the sapphire substrate. The thin film layer is irradiated on the sapphire substrate and the crystal. The method for separating a sapphire substrate and a crystalline thin film layer in a gallium nitride-based vertical light-emitting device described in item 1 of the scope is laser light in an arbitrary array form. A method for a substrate and a thin film layer, wherein the thin film is located on the substrate, the method includes at least the following steps: 第16頁 1232016 案號 93101293 曰 修正 六、申請專利範圍 提供一雷射陣列於該基材之上方，且該雷射陣列發出之 雷射光得至少部份穿透該基材、且能為該薄膜層吸收； 以該雷射陣列透過該基材照射該薄膜層； 分開該基材與該薄膜層； 其中一光柵形成於該雷射陣列與該藍寶石基材之 間，將雷射二極體陣列的各別光源合成有均勻分佈能力 之面光源； 其中該光柵可與該藍寶石基材平面之邊緣形成一角 度。 6. 如申請專利範圍第5項所述之分離一基材與一薄膜層之 方法，其中該薄膜層之吸收係為該基材與該與該薄膜層 之接面上的吸收。 7. 如申請專利範圍第5項所述之分離一基材與一薄膜層之 方法，其中該雷射陣列為任意陣列形式之雷射光。 8. —種氮化鎵系垂直發光元件結構，其包含： 一金屬基材； 一金屬反射層，位於該金屬基材上； 一 Ρ型氮化鎵系層，位於該金屬反射層上； 一主動層，位於該ρ型氮化鎵系層上；及 一 η型氮化鎵系層，位於該主動層上， 其中該Ρ型氮化鎵系層與該η型氮化鎵層之位置可互 換； 其中該金屬基材至少為CuW，而該金屬反射層至少 為 Ag， A1 或 Rh。Page 16 1232016 Case No. 93101293 Amendment VI. The scope of the patent application provides a laser array above the substrate, and the laser light emitted by the laser array at least partially penetrates the substrate and can be the film Layer absorption; irradiating the thin film layer through the substrate with the laser array; separating the substrate from the thin film layer; a grating formed between the laser array and the sapphire substrate, and a laser diode array Each of the light sources has a surface light source with uniform distribution capability; wherein the grating can form an angle with the edge of the plane of the sapphire substrate. 6. The method for separating a substrate and a thin film layer as described in item 5 of the scope of the patent application, wherein the absorption of the thin film layer is the absorption of the substrate and the interface with the thin film layer. 7. The method for separating a substrate and a thin film layer as described in item 5 of the scope of patent application, wherein the laser array is laser light in an arbitrary array form. 8. A gallium nitride-based vertical light-emitting element structure, comprising: a metal substrate; a metal reflective layer on the metal substrate; a P-type gallium nitride-based layer on the metal reflective layer; An active layer on the p-type gallium nitride-based layer; and an n-type gallium nitride-based layer on the active layer, where the position of the p-type gallium nitride-based layer and the n-type gallium nitride layer may be Interchangeable; wherein the metal substrate is at least CuW, and the metal reflective layer is at least Ag, A1 or Rh. 第17頁Page 17