JP5804046B2 - 液浸露光装置、液浸露光方法及びデバイス製造方法 - Google Patents
液浸露光装置、液浸露光方法及びデバイス製造方法 Download PDFInfo
- Publication number
- JP5804046B2 JP5804046B2 JP2013272925A JP2013272925A JP5804046B2 JP 5804046 B2 JP5804046 B2 JP 5804046B2 JP 2013272925 A JP2013272925 A JP 2013272925A JP 2013272925 A JP2013272925 A JP 2013272925A JP 5804046 B2 JP5804046 B2 JP 5804046B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- substrate
- immersion exposure
- immersion
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本願は、2004年6月9日に出願された特願2004−171115号に基づき優先権を主張し、その内容をここに援用する。
また、露光を行う際には、解像度と同様に焦点深度(DOF)も重要となる。解像度R、及び焦点深度δはそれぞれ以下の式で表される。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
成分)よりも大きくなる可能性もあるが、例えばArFエキシマレーザを露光光とし、1/4程度の縮小倍率の投影光学系PLを使って、25nmより大きいライン・アンド・スペースパターンを基板P上に露光するような場合には、S偏光成分(TE偏光成分)の回折光がP偏光成分(TM偏光成分)の回折光よりも多くマスクMから射出されるので、投影光学系PLの開口数NAが0.9〜1.3のように大きい場合でも高い解像性能を得ることができる。
レーム部材を用いて機械的に床(大地)に逃がしてもよい。
Claims (41)
- 投影光学系を介して露光光を基板に照射する液浸露光装置において、
露光光が通過する開口と、液体供給口と、前記基板の表面が対向するように配置された液体回収口とを有するノズル部材を備え、
前記液体供給口からの液体供給と、前記液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成し、
前記基板は、前記液浸領域を介して露光され、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
前記液体供給口は、前記基板の表面が対向するように設けられ、
前記液体回収口が前記液体供給口を囲むように、前記液体回収口と前記液体供給口とが前記ノズル部材に設けられている液浸露光装置。 - 前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測する計測装置をさらに備える請求項1に記載の液浸露光装置。
- 投影光学系を介して露光光を基板に照射する液浸露光装置において、
露光光が通過する開口と、液体供給口と、前記基板の表面が対向するように配置された液体回収口とを有するノズル部材を備え、
前記液体供給口からの液体供給と、前記液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成し、
前記基板は、前記液浸領域を介して露光され、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
当該液浸露光装置は、前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測する計測装置をさらに備え、
前記計測装置は、パーティクルカウンタを含む液浸露光装置。 - 前記計測装置は、前記液体供給口から供給される前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測する請求項2または3記載の液浸露光装置。
- 前記計測装置は、前記液体回収口から回収された前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測する請求項2または3記載の液浸露光装置。
- 前記計測装置は、比抵抗計を含む請求項2〜5のいずれか一項に記載の液浸露光装置。
- 投影光学系を介して露光光を基板に照射する液浸露光装置において、
露光光が通過する開口と、液体供給口と、前記基板の表面が対向するように配置された液体回収口とを有するノズル部材を備え、
前記液体供給口からの液体供給と、前記液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成し、
前記基板は、前記液浸領域を介して露光され、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
当該液浸露光装置は、前記液浸露光用液体中の異物の量を計測するパーティクルカウンタをさらに備える液浸露光装置。 - 投影光学系を介して露光光を基板に照射する液浸露光装置において、
露光光が通過する開口と、液体供給口と、前記基板の表面が対向するように配置された液体回収口とを有するノズル部材を備え、
前記液体供給口からの液体供給と、前記液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成し、
前記基板は、前記液浸領域を介して露光され、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
当該液浸露光装置は、前記液浸露光用液体の流路に接続されたパーティクルカウンタをさらに備える液浸露光装置。 - 前記機能液は、前記機能液と接触する部材の静電気の発生を防止する請求項1〜8のいずれか一項に記載の液浸露光装置。
- 前記機能液は、前記機能液と接触する部材の除電を行う請求項1〜9のいずれか一項に記載の液浸露光装置。
- 前記機能液と接触する部材は、前記ノズル部材、前記ノズル部材に接続する流路形成部材、前記投影光学系のうち最も像面側の光学素子、及び前記基板を保持して移動可能な基板ステージのうち少なくともいずれか一つを含む請求項9又は10記載の液浸露光装置。
- 前記機能液は、前記基板ステージの上面と接触する請求項11に記載の液浸露光装置。
- 前記基板上のアライメントマークを検出する第1アライメント系を備え、
前記基板ステージには、前記第1アライメント系で検出される基準マークを有する基準部材が設けられ、
計測処理において、前記基準部材上に液浸領域が形成される請求項11または12記載の液浸露光装置。 - 前記基板ステージには、光計測部が設けられ、
計測処理において、前記光計測部上に液浸領域が形成される請求項11〜13のいずれか一項に記載の液浸露光装置。 - 前記光計測部を用いた計測処理は、空間像計測を含む請求項14記載の液浸露光装置。
- 前記光計測部を用いた計測処理は、照度計測を含む請求項14又は15記載の液浸露光装置。
- 前記液浸露光用液体の比抵抗値を計測する比抵抗計をさらに備える請求項1、7、8のいずれか一項に記載の液浸露光装置。
- 前記液浸露光用液体の流路に接続された比抵抗計をさらに備える請求項1、7、8のいずれか一項に記載の液浸露光装置。
- 前記ノズル部材は、前記投影光学系の先端部を囲むように配置されている請求項3、7、8のいずれか一項に記載の液浸露光装置。
- 請求項1〜19のいずれか一項に記載の液浸露光装置を用いて基板を露光することと、
露光された前記基板を処理することと、
を含むデバイス製造方法。 - 投影光学系を介して露光光を基板に照射する液浸露光方法において、
露光光が通過する開口を有するノズル部材の液体供給口からの液体供給と、前記基板の表面が対向するように前記ノズル部材に配置された液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成することと、
前記液浸領域を介して前記基板を露光することと、を含み、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
前記基板の表面が対向するように前記ノズル部材に設けられた前記液体供給口から液体供給、および前記液体供給口を囲むように前記ノズル部材に設けられた前記液体回収口から液体回収を行いながら前記液浸領域を形成する液浸露光方法。 - 前記ノズル部材は、前記投影光学系の先端部を囲むように配置されている請求項21記載の液浸露光方法。
- 前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測することをさらに含む請求項21または22記載の液浸露光方法。
- 投影光学系を介して露光光を基板に照射する液浸露光方法において、
露光光が通過する開口を有するノズル部材の液体供給口からの液体供給と、前記基板の表面が対向するように前記ノズル部材に配置された液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成することと、
前記液浸領域を介して前記基板を露光することと、
前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方を計測すること、を含み、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水であり、
前記計測は、パーティクルカウンタを用いて行われる液浸露光方法。 - 前記計測は、前記液体供給口から供給される前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方の計測を含む請求項23または24記載の液浸露光方法。
- 前記計測は、前記液体回収口から回収された前記液浸露光用液体の性質及び成分のうち少なくともいずれか一方の計測を含む請求項23または24記載の液浸露光方法。
- 前記計測は、比抵抗計を用いて行われる請求項23〜26のいずれか一項記載の液浸露光方法。
- 投影光学系を介して露光光を基板に照射する液浸露光方法において、
露光光が通過する開口を有するノズル部材の液体供給口からの液体供給と、前記基板の表面が対向するように前記ノズル部材に配置された液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸露光用液体で液浸領域を形成することと、
前記液浸領域を介して前記基板を露光することと、
前記液浸露光用液体中の異物の量を計測すること、を含み、
前記液浸露光用液体として機能液が用いられ、
前記機能液が炭酸ガス水である液浸露光方法。 - 前記計測は、前記液浸露光用液体の流路に接続されたパーティクルカウンタを用いて行われる請求項28記載の液浸露光方法。
- 前記機能液は、前記機能液と接触する部材の静電気の発生を防止する請求項21〜29のいずれか一項記載の液浸露光方法。
- 前記機能液は、前記機能液と接触する部材の除電を行う請求項21〜30のいずれか一項記載の液浸露光方法。
- 前記機能液と接触する部材は、前記ノズル部材、前記ノズル部材に接続する流路形成部材、前記投影光学系のうち最も像面側の光学素子、及び前記基板を保持して移動可能な基板ステージのうち少なくともいずれか一つを含む請求項21〜31のいずれか一項記載の液浸露光方法。
- 前記機能液は、前記基板ステージの上面と接触する請求項32に記載の液浸露光方法。
- 前記基板ステージには、基準マークを有する基準部材が設けられ、
前記基準マークは、前記基板上のアライメントマークを検出する第1アライメント系で検出され、
計測処理において、前記基準部材上に液浸領域が形成される請求項32又は33記載の液浸露光方法。 - 前記計測処理の結果に基づいて前記基板のアライメントが行われる請求項34記載の液浸露光方法。
- 計測処理において、前記基板ステージに設けられた光計測部上に液浸領域が形成される請求項32〜35のいずれか一項記載の液浸露光方法。
- 前記光計測部を用いた計測処理は、空間像計測を含む請求項36記載の液浸露光方法。
- 前記光計測部を用いた計測処理は、照度計測を含む請求項36又は37記載の液浸露光方法。
- 前記液浸露光用液体の比抵抗値を計測することをさらに含む請求項21、22、28、29のいずれか一項に記載の液浸露光方法。
- 前記計測は、前記液浸露光用液体の流路に接続された比抵抗計を用いて行われる請求項39記載の液浸露光方法。
- 請求項21〜40のいずれか一項に記載の液浸露光方法を用いて基板を露光することと、
露光された前記基板を処理することと、
を含むデバイス製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013272925A JP5804046B2 (ja) | 2004-06-09 | 2013-12-27 | 液浸露光装置、液浸露光方法及びデバイス製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004171115 | 2004-06-09 | ||
JP2004171115 | 2004-06-09 | ||
JP2013272925A JP5804046B2 (ja) | 2004-06-09 | 2013-12-27 | 液浸露光装置、液浸露光方法及びデバイス製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012083218A Division JP5573878B2 (ja) | 2004-06-09 | 2012-03-30 | 露光装置及びデバイス製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014228342A Division JP5904258B2 (ja) | 2004-06-09 | 2014-11-10 | 液浸露光装置及びそのメンテナンス方法並びにデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014060459A JP2014060459A (ja) | 2014-04-03 |
JP5804046B2 true JP5804046B2 (ja) | 2015-11-04 |
Family
ID=35503354
Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006514514A Expired - Fee Related JP4760708B2 (ja) | 2004-06-09 | 2005-06-07 | 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法 |
JP2006274332A Expired - Fee Related JP4665883B2 (ja) | 2004-06-09 | 2006-10-05 | 露光装置及び露光方法、メンテナンス方法、デバイス製造方法 |
JP2008164527A Expired - Fee Related JP4666014B2 (ja) | 2004-06-09 | 2008-06-24 | 露光装置、メンテナンス方法、及びデバイス製造方法 |
JP2010026922A Expired - Fee Related JP5056866B2 (ja) | 2004-06-09 | 2010-02-09 | 露光装置、デバイス製造方法、及び洗浄方法 |
JP2011089245A Expired - Fee Related JP5170279B2 (ja) | 2004-06-09 | 2011-04-13 | 露光装置及び洗浄方法 |
JP2012083218A Expired - Fee Related JP5573878B2 (ja) | 2004-06-09 | 2012-03-30 | 露光装置及びデバイス製造方法 |
JP2013272925A Expired - Fee Related JP5804046B2 (ja) | 2004-06-09 | 2013-12-27 | 液浸露光装置、液浸露光方法及びデバイス製造方法 |
JP2014228342A Active JP5904258B2 (ja) | 2004-06-09 | 2014-11-10 | 液浸露光装置及びそのメンテナンス方法並びにデバイス製造方法 |
JP2015189284A Expired - Fee Related JP6288025B2 (ja) | 2004-06-09 | 2015-09-28 | 露光装置及び露光方法並びにデバイス製造方法 |
JP2016216513A Active JP6319402B2 (ja) | 2004-06-09 | 2016-11-04 | 露光装置、デバイス製造方法及び露光方法 |
JP2017069847A Expired - Fee Related JP6308316B2 (ja) | 2004-06-09 | 2017-03-31 | 露光装置、デバイス製造方法及び露光方法 |
JP2017237927A Ceased JP2018036677A (ja) | 2004-06-09 | 2017-12-12 | 露光装置及びデバイス製造方法 |
Family Applications Before (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006514514A Expired - Fee Related JP4760708B2 (ja) | 2004-06-09 | 2005-06-07 | 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法 |
JP2006274332A Expired - Fee Related JP4665883B2 (ja) | 2004-06-09 | 2006-10-05 | 露光装置及び露光方法、メンテナンス方法、デバイス製造方法 |
JP2008164527A Expired - Fee Related JP4666014B2 (ja) | 2004-06-09 | 2008-06-24 | 露光装置、メンテナンス方法、及びデバイス製造方法 |
JP2010026922A Expired - Fee Related JP5056866B2 (ja) | 2004-06-09 | 2010-02-09 | 露光装置、デバイス製造方法、及び洗浄方法 |
JP2011089245A Expired - Fee Related JP5170279B2 (ja) | 2004-06-09 | 2011-04-13 | 露光装置及び洗浄方法 |
JP2012083218A Expired - Fee Related JP5573878B2 (ja) | 2004-06-09 | 2012-03-30 | 露光装置及びデバイス製造方法 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014228342A Active JP5904258B2 (ja) | 2004-06-09 | 2014-11-10 | 液浸露光装置及びそのメンテナンス方法並びにデバイス製造方法 |
JP2015189284A Expired - Fee Related JP6288025B2 (ja) | 2004-06-09 | 2015-09-28 | 露光装置及び露光方法並びにデバイス製造方法 |
JP2016216513A Active JP6319402B2 (ja) | 2004-06-09 | 2016-11-04 | 露光装置、デバイス製造方法及び露光方法 |
JP2017069847A Expired - Fee Related JP6308316B2 (ja) | 2004-06-09 | 2017-03-31 | 露光装置、デバイス製造方法及び露光方法 |
JP2017237927A Ceased JP2018036677A (ja) | 2004-06-09 | 2017-12-12 | 露光装置及びデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US8520184B2 (ja) |
EP (3) | EP2966670B1 (ja) |
JP (12) | JP4760708B2 (ja) |
KR (9) | KR101512884B1 (ja) |
CN (8) | CN101776850B (ja) |
HK (5) | HK1101294A1 (ja) |
TW (7) | TWI417669B (ja) |
WO (1) | WO2005122218A1 (ja) |
Families Citing this family (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
TWI518742B (zh) | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101945638B1 (ko) * | 2004-02-04 | 2019-02-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2966670B1 (en) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1783822A4 (en) * | 2004-06-21 | 2009-07-15 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE DEVICE ELEMENT CLEANING METHOD, EXPOSURE DEVICE MAINTENANCE METHOD, MAINTENANCE DEVICE, AND DEVICE MANUFACTURING METHOD |
JP2006032750A (ja) * | 2004-07-20 | 2006-02-02 | Canon Inc | 液浸型投影露光装置、及びデバイス製造方法 |
US7385670B2 (en) | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
TW200628995A (en) * | 2004-10-13 | 2006-08-16 | Nikon Corp | Exposure device, exposure method, and device manufacturing method |
TW200625026A (en) * | 2004-12-06 | 2006-07-16 | Nikon Corp | Substrate processing method, method of exposure, exposure device and device manufacturing method |
JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1873816A4 (en) * | 2005-04-18 | 2010-11-24 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENTS MANUFACTURING METHOD |
KR101466533B1 (ko) | 2005-04-25 | 2014-11-27 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 액체 공급 방법 |
KR101479392B1 (ko) | 2005-04-28 | 2015-01-05 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
EP1965414A4 (en) | 2005-12-06 | 2010-08-25 | Nikon Corp | EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
US7405417B2 (en) * | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
WO2007086316A1 (ja) * | 2006-01-26 | 2007-08-02 | Nikon Corporation | 重ね合わせ管理方法及び装置、処理装置、測定装置及び露光装置、デバイス製造システム及びデバイス製造方法、並びにプログラム及び情報記録媒体 |
WO2007088872A1 (ja) * | 2006-02-03 | 2007-08-09 | Nikon Corporation | 基板処理方法、基板処理システム、プログラム及び記録媒体 |
JP2007227543A (ja) * | 2006-02-22 | 2007-09-06 | Toshiba Corp | 液浸光学装置、洗浄方法及び液浸露光方法 |
EP1995768A4 (en) | 2006-03-13 | 2013-02-06 | Nikon Corp | EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
US7602471B2 (en) * | 2006-05-17 | 2009-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for particle monitoring in immersion lithography |
CN102298274A (zh) * | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
CN101385125B (zh) * | 2006-05-22 | 2011-04-13 | 株式会社尼康 | 曝光方法及装置、维修方法、以及组件制造方法 |
CN102156389A (zh) | 2006-05-23 | 2011-08-17 | 株式会社尼康 | 维修方法、曝光方法及装置、以及组件制造方法 |
JP5245825B2 (ja) | 2006-06-30 | 2013-07-24 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
CN100541713C (zh) * | 2006-07-18 | 2009-09-16 | 东京毅力科创株式会社 | 高折射率液体循环***、图案形成装置以及图案形成方法 |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
KR101523388B1 (ko) * | 2006-08-30 | 2015-05-27 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재 |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5029611B2 (ja) | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
KR100830586B1 (ko) * | 2006-12-12 | 2008-05-21 | 삼성전자주식회사 | 기판을 노광하는 장치 및 방법 |
US20080198347A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Immersion exposure apparatus and method of manufacturing device |
JP4366407B2 (ja) * | 2007-02-16 | 2009-11-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7763869B2 (en) * | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
JP4992558B2 (ja) * | 2007-06-04 | 2012-08-08 | 株式会社ニコン | 液浸露光装置、デバイス製造方法、及び評価方法 |
JP2008311372A (ja) * | 2007-06-13 | 2008-12-25 | Nomura Micro Sci Co Ltd | 超純水中の溶存窒素の測定方法及び溶存窒素測定装置 |
JP5031459B2 (ja) * | 2007-06-27 | 2012-09-19 | 株式会社アルバック | 粗微移動装置及びそれを備えた液体供給装置 |
JP4490459B2 (ja) | 2007-06-29 | 2010-06-23 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP5018277B2 (ja) * | 2007-07-02 | 2012-09-05 | 株式会社ニコン | 露光装置、デバイス製造方法、及びクリーニング方法 |
US7817241B2 (en) * | 2007-07-05 | 2010-10-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101923356B1 (ko) * | 2007-07-18 | 2018-11-28 | 가부시키가이샤 니콘 | 계측 방법, 스테이지 장치, 및 노광 장치 |
US20090025753A1 (en) * | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US9025126B2 (en) | 2007-07-31 | 2015-05-05 | Nikon Corporation | Exposure apparatus adjusting method, exposure apparatus, and device fabricating method |
US20090040482A1 (en) * | 2007-08-10 | 2009-02-12 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
JP2009071193A (ja) * | 2007-09-14 | 2009-04-02 | Canon Inc | 露光装置及びデバイスの製造方法 |
NL1035942A1 (nl) | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
SG151198A1 (en) | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
NL1036273A1 (nl) | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
US8654306B2 (en) * | 2008-04-14 | 2014-02-18 | Nikon Corporation | Exposure apparatus, cleaning method, and device fabricating method |
TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
US8435723B2 (en) * | 2008-09-11 | 2013-05-07 | Nikon Corporation | Pattern forming method and device production method |
JP2010098172A (ja) * | 2008-10-17 | 2010-04-30 | Canon Inc | 液体回収装置、露光装置及びデバイス製造方法 |
JPWO2010050240A1 (ja) * | 2008-10-31 | 2012-03-29 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
JP5245740B2 (ja) * | 2008-11-13 | 2013-07-24 | 株式会社ニコン | 露光装置及び露光方法 |
NL2003820A (en) * | 2008-12-22 | 2010-06-23 | Asml Netherlands Bv | Fluid handling structure, table, lithographic apparatus, immersion lithographic apparatus, and device manufacturing methods. |
JP5482784B2 (ja) | 2009-03-10 | 2014-05-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
JP5453878B2 (ja) * | 2009-03-31 | 2014-03-26 | 栗田工業株式会社 | 超純水製造設備及び超純水のモニタリング方法 |
WO2010117047A1 (ja) | 2009-04-10 | 2010-10-14 | 株式会社ニコン | 光学材料、光学素子、及びその製造方法 |
NL2004540A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
US20110001945A1 (en) | 2009-07-01 | 2011-01-06 | Masayuki Shiraishi | Projection optical system, exposure apparatus, and assembly method thereof |
US20110199591A1 (en) * | 2009-10-14 | 2011-08-18 | Nikon Corporation | Exposure apparatus, exposing method, maintenance method and device fabricating method |
KR101733257B1 (ko) | 2009-11-05 | 2017-05-24 | 가부시키가이샤 니콘 | 포커스 테스트 마스크, 포커스 계측 방법, 노광 장치, 및 노광 방법 |
KR101774607B1 (ko) | 2010-02-03 | 2017-09-04 | 가부시키가이샤 니콘 | 조명 광학 장치, 조명 방법, 및 노광 방법 및 장치 |
JP5131312B2 (ja) * | 2010-04-26 | 2013-01-30 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
WO2012011512A1 (ja) * | 2010-07-20 | 2012-01-26 | 株式会社ニコン | 露光方法、露光装置および洗浄方法 |
US20120019803A1 (en) * | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
US8795953B2 (en) * | 2010-09-14 | 2014-08-05 | Nikon Corporation | Pattern forming method and method for producing device |
JP5862895B2 (ja) | 2010-09-22 | 2016-02-16 | 株式会社ニコン | 空間光変調器、露光装置、及びデバイス製造方法 |
WO2012043497A1 (ja) | 2010-09-27 | 2012-04-05 | 株式会社ニコン | 空間光変調器の駆動方法、露光用パターンの生成方法、並びに露光方法及び装置 |
JP2012080007A (ja) * | 2010-10-05 | 2012-04-19 | Nikon Corp | 露光装置、メンテナンス方法、及びデバイス製造方法 |
WO2012060410A1 (ja) * | 2010-11-02 | 2012-05-10 | 株式会社ニコン | 液体供給装置、液体供給方法、管理装置、管理方法、露光装置、露光方法、デバイス製造システム、デバイス製造方法、プログラム、及び記録媒体 |
US10120283B2 (en) | 2011-06-06 | 2018-11-06 | Nikon Corporation | Illumination method, illumination optical device, and exposure device |
US10317346B2 (en) | 2011-09-02 | 2019-06-11 | Nikon Corporation | Method and device for inspecting spatial light modulator, and exposure method and device |
JP6120001B2 (ja) | 2011-10-24 | 2017-04-26 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
US9919939B2 (en) | 2011-12-06 | 2018-03-20 | Delta Faucet Company | Ozone distribution in a faucet |
WO2013108560A1 (ja) | 2012-01-18 | 2013-07-25 | 株式会社ニコン | 空間光変調器の駆動方法、露光用パターンの生成方法、並びに露光方法及び装置 |
JP2012195606A (ja) * | 2012-06-13 | 2012-10-11 | Nikon Corp | 露光装置、デバイス製造方法、及びクリーニング方法 |
CN107219721B (zh) | 2012-07-10 | 2020-08-21 | 株式会社尼康 | 标记形成方法和器件制造方法 |
WO2014010593A1 (ja) | 2012-07-10 | 2014-01-16 | 株式会社ニコン | マーク及びその形成方法、並びに露光装置 |
ITMI20121541A1 (it) * | 2012-09-18 | 2014-03-19 | Saati Spa | Metodo per la realizzazione di tessuti in monofilo sintetico, parzialmente metallizzati, per applicazioni estetiche o di marcatura. |
WO2014061760A1 (ja) | 2012-10-19 | 2014-04-24 | 株式会社ニコン | パターン形成方法及びデバイス製造方法 |
US10274835B2 (en) | 2012-12-20 | 2019-04-30 | Nikon Corporation | Evaluation method and device, processing method, and exposure system |
TWI672788B (zh) | 2013-03-27 | 2019-09-21 | 日商尼康股份有限公司 | 標記形成方法、標記檢測方法、及元件製造方法 |
JP6333039B2 (ja) | 2013-05-16 | 2018-05-30 | キヤノン株式会社 | インプリント装置、デバイス製造方法およびインプリント方法 |
JP6315904B2 (ja) * | 2013-06-28 | 2018-04-25 | キヤノン株式会社 | インプリント方法、インプリント装置及びデバイスの製造方法 |
JP6306377B2 (ja) * | 2014-03-11 | 2018-04-04 | 株式会社Screenホールディングス | 描画方法および描画装置 |
TWI639064B (zh) * | 2014-04-01 | 2018-10-21 | 日商尼康股份有限公司 | 基板處理裝置及元件製造方法 |
CN104035288A (zh) * | 2014-06-05 | 2014-09-10 | 浙江大学 | 用于浸没式光刻机中的负压环境下的连续气液分离装置 |
CN105793960B (zh) * | 2014-06-12 | 2018-09-11 | 富士电机株式会社 | 杂质添加装置、杂质添加方法以及半导体元件的制造方法 |
CN105983552B (zh) * | 2015-02-15 | 2019-12-24 | 盛美半导体设备(上海)有限公司 | 一种防掉落的半导体清洗装置 |
JP6468041B2 (ja) * | 2015-04-13 | 2019-02-13 | 富士電機株式会社 | 不純物導入装置、不純物導入方法及び半導体素子の製造方法 |
US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
CN107241545A (zh) * | 2016-03-29 | 2017-10-10 | 齐发光电股份有限公司 | 对焦方法及对焦装置 |
JP6399037B2 (ja) | 2016-05-18 | 2018-10-03 | 横河電機株式会社 | 対物レンズユニット及び液浸顕微鏡 |
CN108535963B (zh) * | 2017-03-03 | 2021-04-02 | 中芯国际集成电路制造(上海)有限公司 | 边缘曝光装置、晶圆结构及其形成方法 |
CN108983552B (zh) * | 2017-05-31 | 2020-01-24 | 上海微电子装备(集团)股份有限公司 | 一种移入移出机构及光刻机工件台移入移出装置 |
CN107255907B (zh) * | 2017-08-17 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种补偿装置、曝光装置及曝光补偿方法 |
US11086239B2 (en) * | 2018-04-16 | 2021-08-10 | Asml Netherlands B.V. | Cleaning device and method of cleaning |
WO2024037801A1 (en) * | 2022-08-19 | 2024-02-22 | Asml Netherlands B.V. | A conditioning system, arrangement and method |
Family Cites Families (312)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US677257A (en) * | 1900-01-16 | 1901-06-25 | Daniel c oliver | Mechanism for the manufacture of buffer-wheels, &c. |
US3139101A (en) | 1962-07-23 | 1964-06-30 | Gen Motors Corp | Sonic surface cleaner |
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6197918A (ja) | 1984-10-19 | 1986-05-16 | Hitachi Ltd | X線露光装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPH0782981B2 (ja) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | 投影露光方法及び装置 |
JPH0695511B2 (ja) | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
WO1988004582A1 (en) * | 1986-12-18 | 1988-06-30 | Eastman Kodak Company | Ultrasonic cleaning method and apparatus |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPS6463099A (en) | 1987-09-01 | 1989-03-09 | Kyoritsu Yuki Co Ltd | Method for caking sludge |
JPH047417A (ja) | 1990-04-24 | 1992-01-10 | Fujibayashi Concrete Kogyo Kk | 重力式プレキャスト擁壁 |
JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH05100182A (ja) | 1991-10-11 | 1993-04-23 | Nikon Corp | レーザトラツプ集塵装置及び集塵方法 |
JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
JPH06459A (ja) | 1992-06-19 | 1994-01-11 | T H I Syst Kk | 洗浄乾燥方法とその装置 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH06181157A (ja) | 1992-12-15 | 1994-06-28 | Nikon Corp | 低発塵性の装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
JP3613288B2 (ja) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | 露光装置用のクリーニング装置 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JP3647100B2 (ja) | 1995-01-12 | 2005-05-11 | キヤノン株式会社 | 検査装置およびこれを用いた露光装置やデバイス生産方法 |
JPH08195375A (ja) | 1995-01-17 | 1996-07-30 | Sony Corp | 回転乾燥方法および回転乾燥装置 |
US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6297871B1 (en) | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
US5798838A (en) | 1996-02-28 | 1998-08-25 | Nikon Corporation | Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH10116760A (ja) | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
US6033478A (en) | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
DE69738910D1 (de) | 1996-11-28 | 2008-09-25 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
JP3626504B2 (ja) | 1997-03-10 | 2005-03-09 | アーエスエム リソグラフィ ベスローテン フェンノートシャップ | 2個の物品ホルダを有する位置決め装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
EP0874283B1 (en) | 1997-04-23 | 2003-09-03 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
US6268904B1 (en) | 1997-04-23 | 2001-07-31 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US6503711B1 (en) | 1997-06-18 | 2003-01-07 | Ulrich J. Krull | Nucleic acid biosensor diagnostics |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
US5980647A (en) | 1997-07-15 | 1999-11-09 | International Business Machines Corporation | Metal removal cleaning process and apparatus |
US6085764A (en) | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
JP3445120B2 (ja) | 1997-09-30 | 2003-09-08 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
WO1999027568A1 (fr) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
JPH11162831A (ja) | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
JPH11283903A (ja) | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
JPH11166990A (ja) | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
JPH11191525A (ja) | 1997-12-26 | 1999-07-13 | Nikon Corp | 投影露光装置 |
JP4207240B2 (ja) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法 |
US5913981A (en) * | 1998-03-05 | 1999-06-22 | Micron Technology, Inc. | Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
US5958143A (en) * | 1998-04-28 | 1999-09-28 | The Regents Of The University Of California | Cleaning process for EUV optical substrates |
US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000091207A (ja) | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
JP2000097616A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 干渉計 |
JP3690569B2 (ja) * | 1998-11-20 | 2005-08-31 | 大日本インキ化学工業株式会社 | 超純水の比抵抗調整装置及び調整方法 |
JP2000311933A (ja) | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
JP2000354835A (ja) | 1999-06-15 | 2000-12-26 | Toshiba Corp | 超音波洗浄処理方法及びその装置 |
JP2001013677A (ja) | 1999-06-28 | 2001-01-19 | Shin Etsu Chem Co Ltd | ペリクル収納容器の洗浄方法 |
US6459672B1 (en) | 1999-09-28 | 2002-10-01 | Sony Corporation | Optical head and optical disc device |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
US6496259B2 (en) | 1999-12-28 | 2002-12-17 | Robert John Barish | Optical device providing relative alignment |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US6421932B2 (en) | 2000-02-14 | 2002-07-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
HU225403B1 (en) * | 2000-03-13 | 2006-11-28 | Andras Dr Boerzsoenyi | Method and apparatus for calibration of flowmeter of liquid flowing in canal |
JP3996730B2 (ja) | 2000-03-31 | 2007-10-24 | 株式会社日立製作所 | 半導体部品の製造方法 |
US6466365B1 (en) | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
JP2001291855A (ja) | 2000-04-08 | 2001-10-19 | Takashi Miura | 固体撮像素子 |
JP3531914B2 (ja) | 2000-04-14 | 2004-05-31 | キヤノン株式会社 | 光学装置、露光装置及びデバイス製造方法 |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
CN1327888A (zh) * | 2000-06-09 | 2001-12-26 | 株式会社平间理化研究所 | 基板表面处理装置 |
US6446365B1 (en) | 2000-09-15 | 2002-09-10 | Vermeer Manufacturing Company | Nozzle mount for soft excavation |
JP3840388B2 (ja) | 2000-09-25 | 2006-11-01 | 東京エレクトロン株式会社 | 基板処理装置 |
KR100798769B1 (ko) * | 2000-09-25 | 2008-01-29 | 동경 엘렉트론 주식회사 | 기판 처리장치 |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002289514A (ja) * | 2000-12-22 | 2002-10-04 | Nikon Corp | 露光装置及び露光方法 |
KR100555930B1 (ko) | 2001-01-19 | 2006-03-03 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 디바이스 제조방법 및 그 디바이스 |
CN1491427A (zh) | 2001-02-06 | 2004-04-21 | ������������ʽ���� | 曝光装置、曝光法和器件制造法 |
TW550635B (en) * | 2001-03-09 | 2003-09-01 | Toshiba Corp | Manufacturing system of electronic devices |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10123027B4 (de) | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
JP2002336804A (ja) | 2001-05-15 | 2002-11-26 | Nikon Corp | 光学部品の洗浄方法及び露光装置 |
DE60232568D1 (de) * | 2001-07-09 | 2009-07-23 | Canon Kk | Belichtungsapparat |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US7145671B2 (en) | 2001-08-16 | 2006-12-05 | Hewlett-Packard Development Company, L.P. | Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer |
JP2003124089A (ja) | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
EP1313337A1 (de) | 2001-11-15 | 2003-05-21 | Siemens Aktiengesellschaft | Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren |
EP1329773A3 (en) | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Lithographic apparatus, apparatus cleaning method, and device manufacturing method |
EP1480258A4 (en) * | 2002-01-29 | 2005-11-09 | Nikon Corp | EXPOSURE DEVICE AND EXPOSURE METHOD |
DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
US7154676B2 (en) | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
WO2003077034A2 (en) * | 2002-03-06 | 2003-09-18 | E.I. Du Pont De Nemours And Company | Fluorine-containing compounds with high transparency in the vacuum ultraviolet |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
JP2003317472A (ja) * | 2002-04-17 | 2003-11-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
US20030200996A1 (en) * | 2002-04-30 | 2003-10-30 | Hiatt William Mark | Method and system for cleaning a wafer chuck |
KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
US6853794B2 (en) | 2002-07-02 | 2005-02-08 | Lightel Technologies Inc. | Apparatus for cleaning optical fiber connectors and fiber optic parts |
US6696731B2 (en) * | 2002-07-26 | 2004-02-24 | Micrel, Inc. | ESD protection device for enhancing reliability and for providing control of ESD trigger voltage |
US20040021061A1 (en) | 2002-07-30 | 2004-02-05 | Frederik Bijkerk | Photodiode, charged-coupled device and method for the production |
JP2004071855A (ja) * | 2002-08-07 | 2004-03-04 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
JP3922637B2 (ja) | 2002-08-30 | 2007-05-30 | 本田技研工業株式会社 | サイドエアバッグシステム |
TW559895B (en) * | 2002-09-27 | 2003-11-01 | Taiwan Semiconductor Mfg | Exposure system and exposure method thereof |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
CN1245668C (zh) * | 2002-10-14 | 2006-03-15 | 台湾积体电路制造股份有限公司 | 曝光***及其曝光方法 |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
EP1420302A1 (en) * | 2002-11-18 | 2004-05-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1424599B1 (en) * | 2002-11-29 | 2008-03-12 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4525062B2 (ja) * | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR20130010039A (ko) | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
USRE48515E1 (en) | 2002-12-19 | 2021-04-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP2004007417A (ja) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | 情報提供システム |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
SG10201604762UA (en) | 2003-04-10 | 2016-08-30 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
KR101409565B1 (ko) | 2003-04-10 | 2014-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004090577A2 (en) | 2003-04-11 | 2004-10-21 | Nikon Corporation | Maintaining immersion fluid under a lithographic projection lens |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1480065A3 (en) | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TWI518742B (zh) | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
KR20060009956A (ko) * | 2003-05-28 | 2006-02-01 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
JP2004356356A (ja) * | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
WO2005006417A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US20050021372A1 (en) * | 2003-07-25 | 2005-01-27 | Dimagi, Inc. | Interactive motivation systems and methods for self-care compliance |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
KR101599649B1 (ko) * | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7370659B2 (en) | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
JP2005072404A (ja) * | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
JP4333281B2 (ja) * | 2003-08-28 | 2009-09-16 | 株式会社ニコン | 液浸光学系及び液体媒体並びに露光装置 |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
KR101477850B1 (ko) | 2003-08-29 | 2014-12-30 | 가부시키가이샤 니콘 | 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법 |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4305095B2 (ja) * | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
KR101380989B1 (ko) | 2003-08-29 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
EP1667211B1 (en) | 2003-09-26 | 2015-09-09 | Nikon Corporation | Projection exposure apparatus, cleaning and maintenance methods for a projection exposure apparatus, and method of producing a device |
KR101443001B1 (ko) * | 2003-09-29 | 2014-09-22 | 가부시키가이샤 니콘 | 투영 노광 장치, 투영 노광 방법 및 디바이스 제조 방법 |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
EP1524558A1 (en) * | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
KR101547037B1 (ko) | 2003-12-15 | 2015-08-24 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US7292315B2 (en) * | 2003-12-19 | 2007-11-06 | Asml Masktools B.V. | Optimized polarization illumination |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7145641B2 (en) | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
DE602004027162D1 (de) * | 2004-01-05 | 2010-06-24 | Nippon Kogaku Kk | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101288187B1 (ko) | 2004-01-14 | 2013-07-19 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
KR20070039869A (ko) | 2004-02-03 | 2007-04-13 | 브루스 더블유. 스미스 | 용액을 사용한 포토리소그래피 방법 및 관련 시스템 |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7557900B2 (en) | 2004-02-10 | 2009-07-07 | Nikon Corporation | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
WO2005081067A1 (en) | 2004-02-13 | 2005-09-01 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
JP2005236047A (ja) * | 2004-02-19 | 2005-09-02 | Canon Inc | 露光装置及び方法 |
KR101106497B1 (ko) | 2004-02-20 | 2012-01-20 | 가부시키가이샤 니콘 | 노광 장치, 공급 방법 및 회수 방법, 노광 방법, 및디바이스 제조 방법 |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20160085375A (ko) | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像***的图像质量的*** |
US7123348B2 (en) * | 2004-06-08 | 2006-10-17 | Asml Netherlands B.V | Lithographic apparatus and method utilizing dose control |
EP2966670B1 (en) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP2006024692A (ja) * | 2004-07-07 | 2006-01-26 | Toshiba Corp | レジストパターン形成方法 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006024819A (ja) * | 2004-07-09 | 2006-01-26 | Renesas Technology Corp | 液浸露光装置、及び電子デバイスの製造方法 |
US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
FR2877604B3 (fr) * | 2004-11-10 | 2007-04-06 | Erca Formseal Sa | Procede de fabrication de recipients par thermoformage et de mise en place de banderoles de decor sur ces recipients. |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006062065A1 (ja) | 2004-12-06 | 2006-06-15 | Nikon Corporation | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
US7248334B2 (en) | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7262422B2 (en) | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7522295B2 (en) * | 2006-11-07 | 2009-04-21 | Tokyo Electron Limited | Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer |
US20090025753A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
US7822906B2 (en) * | 2007-07-30 | 2010-10-26 | Via Technologies, Inc. | Data flush methods |
JP4672763B2 (ja) * | 2008-09-16 | 2011-04-20 | 株式会社東芝 | レジストパターン形成方法 |
-
2005
- 2005-06-07 EP EP15166205.3A patent/EP2966670B1/en not_active Not-in-force
- 2005-06-07 KR KR1020127003719A patent/KR101512884B1/ko active IP Right Grant
- 2005-06-07 US US11/570,219 patent/US8520184B2/en not_active Expired - Fee Related
- 2005-06-07 KR KR1020127000370A patent/KR101422964B1/ko active IP Right Grant
- 2005-06-07 EP EP16204702.1A patent/EP3203498A1/en not_active Withdrawn
- 2005-06-07 JP JP2006514514A patent/JP4760708B2/ja not_active Expired - Fee Related
- 2005-06-07 CN CN2010101278158A patent/CN101776850B/zh not_active Expired - Fee Related
- 2005-06-07 KR KR1020077000539A patent/KR101162128B1/ko active IP Right Grant
- 2005-06-07 CN CN201610366219.2A patent/CN105911821B/zh not_active Expired - Fee Related
- 2005-06-07 KR KR1020177003247A patent/KR20170016532A/ko active IP Right Grant
- 2005-06-07 KR KR1020157010305A patent/KR101747662B1/ko active IP Right Grant
- 2005-06-07 KR KR1020137023317A patent/KR101440746B1/ko active IP Right Grant
- 2005-06-07 KR KR1020147025197A patent/KR101561796B1/ko active IP Right Grant
- 2005-06-07 WO PCT/JP2005/010412 patent/WO2005122218A1/ja active Application Filing
- 2005-06-07 CN CN201310051383.0A patent/CN103439863B/zh not_active Expired - Fee Related
- 2005-06-07 CN CN201810156462.0A patent/CN108490741A/zh active Pending
- 2005-06-07 CN CN2010101278020A patent/CN101819386B/zh not_active Expired - Fee Related
- 2005-06-07 CN CN201310395481.6A patent/CN103605262B/zh not_active Expired - Fee Related
- 2005-06-07 EP EP05749073.2A patent/EP1783821B1/en not_active Not-in-force
- 2005-06-07 CN CN2005800183590A patent/CN101095213B/zh not_active Expired - Fee Related
- 2005-06-07 KR KR1020137023316A patent/KR101421915B1/ko active IP Right Grant
- 2005-06-07 KR KR1020127025606A patent/KR101433496B1/ko active IP Right Grant
- 2005-06-07 CN CN201510891261.1A patent/CN105467775B/zh not_active Expired - Fee Related
- 2005-06-09 TW TW094118981A patent/TWI417669B/zh not_active IP Right Cessation
- 2005-06-09 TW TW106132273A patent/TW201802619A/zh unknown
- 2005-06-09 TW TW101109466A patent/TWI495960B/zh not_active IP Right Cessation
- 2005-06-09 TW TW105117356A patent/TWI613529B/zh not_active IP Right Cessation
- 2005-06-09 TW TW102131792A patent/TWI584076B/zh not_active IP Right Cessation
- 2005-06-09 TW TW102131788A patent/TWI547767B/zh not_active IP Right Cessation
- 2005-06-09 TW TW100136677A patent/TWI483086B/zh not_active IP Right Cessation
-
2006
- 2006-10-05 JP JP2006274332A patent/JP4665883B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-22 US US11/767,441 patent/US8525971B2/en not_active Expired - Fee Related
- 2007-08-23 HK HK07109175.1A patent/HK1101294A1/xx not_active IP Right Cessation
-
2008
- 2008-06-06 US US12/134,950 patent/US8704997B2/en not_active Expired - Fee Related
- 2008-06-24 JP JP2008164527A patent/JP4666014B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-09 JP JP2010026922A patent/JP5056866B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-13 JP JP2011089245A patent/JP5170279B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012083218A patent/JP5573878B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-25 US US13/950,338 patent/US9645505B2/en not_active Expired - Fee Related
- 2013-12-27 JP JP2013272925A patent/JP5804046B2/ja not_active Expired - Fee Related
-
2014
- 2014-02-07 HK HK14101137.6A patent/HK1189400A1/zh not_active IP Right Cessation
- 2014-06-27 HK HK14106529.1A patent/HK1193656A1/zh not_active IP Right Cessation
- 2014-11-10 JP JP2014228342A patent/JP5904258B2/ja active Active
-
2015
- 2015-09-28 JP JP2015189284A patent/JP6288025B2/ja not_active Expired - Fee Related
-
2016
- 2016-03-30 HK HK16103657.0A patent/HK1215755A1/zh not_active IP Right Cessation
- 2016-07-21 HK HK16108786.3A patent/HK1221289A1/zh not_active IP Right Cessation
- 2016-11-04 JP JP2016216513A patent/JP6319402B2/ja active Active
-
2017
- 2017-03-31 JP JP2017069847A patent/JP6308316B2/ja not_active Expired - Fee Related
- 2017-05-03 US US15/585,664 patent/US20170235238A1/en not_active Abandoned
- 2017-12-12 JP JP2017237927A patent/JP2018036677A/ja not_active Ceased
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6308316B2 (ja) | 露光装置、デバイス製造方法及び露光方法 | |
WO2006062188A1 (ja) | 露光装置、露光方法及びデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140127 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140127 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140903 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140909 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141110 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20141110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150303 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150427 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150817 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5804046 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |