JP5792699B2 - ウェーハーの一時的接着用の環状オレフィン組成物 - Google Patents
ウェーハーの一時的接着用の環状オレフィン組成物 Download PDFInfo
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- JP5792699B2 JP5792699B2 JP2012196932A JP2012196932A JP5792699B2 JP 5792699 B2 JP5792699 B2 JP 5792699B2 JP 2012196932 A JP2012196932 A JP 2012196932A JP 2012196932 A JP2012196932 A JP 2012196932A JP 5792699 B2 JP5792699 B2 JP 5792699B2
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- cycloolefin copolymer
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- 239000000203 mixture Substances 0.000 title claims description 98
- 235000012431 wafers Nutrition 0.000 title claims description 64
- -1 Cyclic olefin Chemical class 0.000 title description 16
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 73
- 229920001577 copolymer Polymers 0.000 claims description 50
- 239000000853 adhesive Substances 0.000 claims description 37
- 230000001070 adhesive effect Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 37
- 239000002904 solvent Substances 0.000 claims description 27
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 11
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 150000001298 alcohols Chemical class 0.000 claims description 6
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims description 5
- 125000003172 aldehyde group Chemical group 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- 150000002825 nitriles Chemical class 0.000 claims description 4
- 150000001925 cycloalkenes Chemical class 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims 2
- 125000001033 ether group Chemical group 0.000 claims 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 29
- 239000000126 substance Substances 0.000 description 26
- 229920005989 resin Polymers 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 20
- XMGQYMWWDOXHJM-JTQLQIEISA-N (+)-α-limonene Chemical compound CC(=C)[C@@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-JTQLQIEISA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 239000003963 antioxidant agent Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- 230000003078 antioxidant effect Effects 0.000 description 10
- 239000004615 ingredient Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 238000002411 thermogravimetry Methods 0.000 description 9
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 8
- 239000002530 phenolic antioxidant Substances 0.000 description 8
- 238000009472 formulation Methods 0.000 description 7
- XRBCRPZXSCBRTK-UHFFFAOYSA-N phosphonous acid Chemical compound OPO XRBCRPZXSCBRTK-UHFFFAOYSA-N 0.000 description 7
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013032 Hydrocarbon resin Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- GGBJHURWWWLEQH-UHFFFAOYSA-N butylcyclohexane Chemical compound CCCCC1CCCCC1 GGBJHURWWWLEQH-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229920006270 hydrocarbon resin Polymers 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 125000001118 alkylidene group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 3
- 239000004914 cyclooctane Substances 0.000 description 3
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- FZSPYHREEHYLCB-UHFFFAOYSA-N 1-tert-butyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C(C)(C)C)=C1 FZSPYHREEHYLCB-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Chemical group 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- HYPABJGVBDSCIT-UPHRSURJSA-N cyclododecene Chemical compound C1CCCCC\C=C/CCCC1 HYPABJGVBDSCIT-UPHRSURJSA-N 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical class CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000004344 phenylpropyl group Chemical group 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MVETVBHSYIYRCX-UHFFFAOYSA-I [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O MVETVBHSYIYRCX-UHFFFAOYSA-I 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229920006271 aliphatic hydrocarbon resin Polymers 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 101150059062 apln gene Proteins 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012933 kinetic analysis Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 150000002848 norbornenes Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003097 polyterpenes Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical compound C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- MAFQBSQRZKWGGE-UHFFFAOYSA-N trimethoxy-[2-[4-(2-trimethoxysilylethyl)phenyl]ethyl]silane Chemical compound CO[Si](OC)(OC)CCC1=CC=C(CC[Si](OC)(OC)OC)C=C1 MAFQBSQRZKWGGE-UHFFFAOYSA-N 0.000 description 1
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/08—Copolymers of ethene
- C09J123/0807—Copolymers of ethene with unsaturated hydrocarbons only containing more than three carbon atoms
- C09J123/0815—Copolymers of ethene with aliphatic 1-olefins
- C09J123/0823—Copolymers of ethene with aliphatic cyclic olefins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
- C08G2261/332—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/40—Polymerisation processes
- C08G2261/41—Organometallic coupling reactions
- C08G2261/418—Ring opening metathesis polymerisation [ROMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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Description
(I)
それぞれの R1 および R2は個別に −H、およびアルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい)から成る群から選択され、さらに
それぞれの R3 は個別に −H、置換または非置換アリール基類(C6〜C18 アリール類が好ましい)、アルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい)、シクロアルキル基類(C3〜C30 シクロアルキル類が好ましく、C3〜C18 シクロアルキル類がより好ましい)、アラルキル基類(C6〜C30 アラルキル類が好ましく、ベンジル、フェネチル、およびフェニルプロピル、等のような C6〜C18 アラルキル基類がより好ましい)、エステル基類、エーテル基類、アセチル基類、アルコール類(C1〜C10 アルコール類が好ましい)、アルデヒド基類、ケトン類、ニトリル類、およびこれらの組合せ、
ならびに
(II)
----- は1重または2重結合;および
それぞれの R4は個別に −H およびアルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい);から成る群から選択される。
この独創的な組成物はシクロオレフィン共重合体および全ての他の添加成分を溶媒系と共に、好ましくは室温から約150℃で、約1〜72時間の間、単に混合することで形成される。
この実施例では、シクロオレフィン共重合体および低分子量COC樹脂を含む調合物が作られた。幾つかの調合物には酸化防止剤が加えられた。
この手順では、1.2グラムのエテン−ノルボルネン共重合体(TOPASTM 5010、Tg 110℃;TOPAS Advanced Polymers 社、ケンタッキー州フロレンスから入手)を6グラムのD−リモネン(Florida Chemical 社)内に 2.8グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM、Mw 8000、Mw/Mn 2.0)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、0.75グラムのエテン−ノルボルネン共重合体(TOPASTM 8007、Tg 78℃)および 3.25グラムの低分子量 COC(TOPASTM Toner TM)を 6グラムのD−リモネン内に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順については、1.519グラムのエテン−ノルボルネン共重合体(TOPASTM 5013、Tg134℃)を 5.92グラムのD−リモネン内に 2.48グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、1.2グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)を 5.92グラムの D−リモネン内に 2.81グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順においては、2.365グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 1.635グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、開環重合により準備した 2.2グラムの水素化ノルボルネンをベースとした共重合体(ZEONORTM1060、Tg 100℃;Zeon Chemicals 社、ケンタッキー州ルイズビルから入手)および 1.8グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)を 5.92グラムの シクロオクタン(Aldrich、ウィスコンシン州ミルウォーキー)内に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この実施例では、種々の粘着付与剤と共にブレンドしたシクロオレフィン共重合体を含む調合物を作った。実施例1のように、幾つかの調合物には酸化防止剤が加えられた。
この手順では、0.83グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)を 5.92グラムの D−リモネン内に 3.17グラムの水素化炭化水素樹脂(REGALITETM R1125; Eastman Chemical社、テネシー州キングスポートから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順については、0.7グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)および 3.3グラムのスチレン化テルペン樹脂(ZONATACTM NG98;Arizona Chemical社、フロリダ州ジャクソンビルから入手)を 5.92グラムの D−リモネン内に 0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、1.9グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 2.1グラムの脂環式炭化水素樹脂(ARKONTM P−140; Arakawa Chemical USA 社、イリノイ州シカゴから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。
この手順においては、2.42グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 1.58グラムの脂環式炭化水素樹脂(PLASTOLYNTM R−1140; Arakawa Chemical USA 社、イリノイ州シカゴから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
上の実施例1および2で準備された調合物を種々の基板ウェーハー上にスピンコートした。焼成して溶媒を気化させさらに接着組成物を再流動化した後、第2ウェーハーをそれぞれの塗布済みウェーハーに圧力をかけて接着した。接着組成物を用いた一時的なウェーハー接着の代表的な手順が図2に説明してある。接着したウェーハーについて機械的強度、熱安定性、および耐薬品性について試験した。ウェーハーは容認できる温度で手動によりこれらを脇に滑らせることにより剥離について試験した。剥離の後、溶媒すすぎおよびスピンを用いて接着組成物の残渣をきれいにした。
Claims (6)
- 溶媒系に溶解または分散されたシクロオレフィン共重合体を含む接着組成物を第1基板のアクティブ面にスピンコートによって塗布することで、接着層を形成させること;および
前記接着層を介して第1および第2基板を一緒に接着させること
を含む、ウェーハーを接着する方法であって、
前記接着組成物が、溶媒系に溶解または分散された、第一のシクロオレフィン共重合体および第二のシクロオレフィン共重合体を含み(ただし、該接着組成物中には粘着付与剤は存在していない)、その際、該第一のシクロオレフィン共重合体が75℃から160℃のガラス転移点(Tg)を有し、該第二のシクロオレフィン共重合体が50℃から70℃のガラス転移点(Tg)および50000ダルトン未満の重量平均分子量を有し、かつ該接着組成物が350℃までは熱安定性を有し、
第1基板が、背面および少なくとも1つのアクティブ部位および複数の微細構造地物から構成されるアクティブ面を有し、前記第2基板が前記接着層に接着される接着面を有し、かつ
前記微細構造地物が前記第1基板の背面から離れた端面をそれぞれ呈し、少なくとも一つの端面は他の前記端面よりも第1基板の背面からより遠くにあり、前記のより遠い端面が前記背面に本質的に平行な面を規定し、かつ前記接着層が、前記の面から前記第2基板上の接着面までの厚みが均一であるように塗布されることを特徴とする、ウェーハーを接着する方法。 - 前記第1基板が、アクティブウェーハーである、請求項1に記載の方法。
- 前記接着組成物が、微細構造地物の内部および上に流れる、請求項1または2に記載の方法。
- 前記接着層が、前記の面から前記第2基板上の接着面までの厚さが20%未満で変動するように塗布される、請求項1から3までのいずれか1項に記載の方法。
- 前記第一のシクロオレフィン共重合体が下記からなる群から選択されるシクロオレフィンの重合により形成される請求項1から4までのいずれか1項に記載の方法:
ここで;
それぞれの R1 および R2 は個別に −H、およびアルキル基類から成る群から選択され;および
それぞれの R3 は個別に、−H、置換または非置換アリール基類、アルキル基類、シクロアルキル基類、アラルキル基類、エステル基類、エーテル基類、アセチル基類、アルコール類、アルデヒド基類、ケトン類、ニトリル類、およびこれらの組合せから成る群から選択される。 - 前記第一のシクロオレフィン共重合体が、下記(I)ならびに(II)からなる群から選択される反復モノマーを含む請求項1から4までのいずれか1項に記載の方法:
(I)
ここで:
それぞれの R1 および R2 は個別に −H、およびアルキル基類から成る群から選択され;および
それぞれの R3 は個別に、−H、置換または非置換アリール基類、アルキル基類、シクロアルキル基類、アラルキル基類、エステル基類、エーテル基類、アセチル基類、アルコール類、アルデヒド基類、ケトン類、ニトリル類、およびこれらの組合せ;ならびに
(II)
-----は1重または2重結合;および
それぞれの R4 は個別に −Hおよびアルキル基類;から成る群から選択される。
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US8092628B2 (en) * | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
US8771927B2 (en) * | 2009-04-15 | 2014-07-08 | Brewer Science Inc. | Acid-etch resistant, protective coatings |
JP5308524B2 (ja) * | 2009-06-11 | 2013-10-09 | 東京応化工業株式会社 | 接着剤組成物 |
JP5619481B2 (ja) | 2010-06-15 | 2014-11-05 | 東京応化工業株式会社 | 接着剤組成物 |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
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JP5681502B2 (ja) | 2010-09-30 | 2015-03-11 | 東京応化工業株式会社 | 接着剤組成物 |
FR2967058B1 (fr) * | 2010-11-05 | 2013-10-04 | Oreal | Composition cosmetique et procede de recourbement des fibres keratiniques |
JP5729097B2 (ja) * | 2011-04-07 | 2015-06-03 | Jsr株式会社 | 基材の処理方法、仮固定材および電子部品 |
WO2013006865A2 (en) | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Methods of transferring device wafers or layers between carrier substrates and other surfaces |
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TWI494398B (zh) | 2015-08-01 |
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US20120291938A1 (en) | 2012-11-22 |
KR101705915B1 (ko) | 2017-02-10 |
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WO2010051212A3 (en) | 2010-07-08 |
US8771442B2 (en) | 2014-07-08 |
EP2623573B1 (en) | 2020-03-25 |
KR20120115579A (ko) | 2012-10-18 |
KR101717807B1 (ko) | 2017-03-17 |
CN103021807A (zh) | 2013-04-03 |
WO2010051212A2 (en) | 2010-05-06 |
KR20110089861A (ko) | 2011-08-09 |
SG185250A1 (en) | 2012-11-29 |
EP2362970B1 (en) | 2019-04-10 |
EP2623573B9 (en) | 2020-07-29 |
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