TWI638043B - 矽晶圓洗劑與清洗矽晶圓的方法 - Google Patents
矽晶圓洗劑與清洗矽晶圓的方法 Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
- 239000006210 lotion Substances 0.000 claims abstract description 31
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 24
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 24
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims abstract description 18
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims abstract description 16
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000001510 limonene Nutrition 0.000 claims abstract description 9
- 229940087305 limonene Drugs 0.000 claims abstract description 9
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims abstract description 8
- 235000017557 sodium bicarbonate Nutrition 0.000 claims abstract description 8
- 210000003298 dental enamel Anatomy 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 3
- 235000011118 potassium hydroxide Nutrition 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 36
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- 229910052707 ruthenium Inorganic materials 0.000 description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- -1 swarf Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
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- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/02—Inorganic compounds ; Elemental compounds
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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Abstract
本發明提出一種矽晶圓洗劑與一種清洗矽晶圓的方法。所述矽晶圓洗劑主要由1wt%～3wt%的檸檬酸、2.5wt%～5wt%的碳酸氫鈉、檸檬烯、氫氧化鉀以及水組成。使用所述矽晶圓洗劑清洗矽晶圓能提升清潔效率。
Description
本發明是有關於一種矽晶圓的清洗技術，且特別是有關於一種矽晶圓洗劑與清洗矽晶圓的方法。
矽晶圓是目前用於各種技術的基板的主要材料之一，例如太陽能電池用矽晶圓。
太陽能電池用矽晶圓的製作是將矽晶棒利用線鋸(wire saw)的方式進行切割。然而，矽晶棒在透過上述線鋸技術進行切割加工後，矽晶圓表面會殘留大量的切削產物(如冷卻液、矽切屑、金屬等)，隨加工時間拉長將會形成氧化物促進團聚現象發生，造成後續清洗加工成本上升。
而且，矽晶圓表面除了有切削產物需去除外，也會有油污殘留，因此亟需尋求一種適合的洗劑，以便有效率地清潔矽晶圓。
本發明提供一種矽晶圓洗劑，能提升對矽晶圓的清潔效率。
本發明提供一種清洗矽晶圓的方法，可在常溫下清洗矽晶圓且清潔效率佳。
本發明的矽晶圓洗劑，主要由以下成分組成：1wt%～3 wt%的檸檬酸、2.5wt%～5 wt%的碳酸氫鈉、檸檬烯、氫氧化鉀以及溶劑。
在本發明的一實施例中，上述的檸檬烯的含量為0.2wt%～1 wt%。
在本發明的一實施例中，上述的氫氧化鉀的含量為0.25wt%～0.75 wt%。
在本發明的一實施例中，上述的矽晶圓洗劑的pH值在10以下。
在本發明的一實施例中，上述的矽晶圓洗劑的pH值為7.0~10.0。
在本發明的一實施例中，上述的溶劑可為水。
本發明的清洗矽晶圓的方法則是將矽晶圓在常溫下浸泡至上述之矽晶圓洗劑。
在本發明的另一實施例中，上述的浸泡時間為600秒～1200秒。
基於上述，本發明藉由具有特定成分與具有特定比例範圍的成分來構成矽晶圓洗劑，因此能達到在常溫且有效率地清潔矽晶圓的效果。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
以下，將詳細描述本發明的實施例。然而，這些實施例為例示性，且本發明揭露不限於此。
在本發明的一實施例中，矽晶圓洗劑主要是由以下成分組成：1wt%～3 wt%的檸檬酸、2.5wt%～5 wt%的碳酸氫鈉(sodium bicarbonate)、檸檬烯、氫氧化鉀以及溶劑。上述檸檬酸會與上述碳酸氫鈉(俗稱「小蘇打」)產生檸檬酸鈉，且所產生的檸檬酸鈉會解離為檸檬酸根，由於檸檬酸根可與金屬或矽的表面電子發生類似螯合的假性結合，所以能有效地從矽晶圓表面將切削產物移除。如以微米級或次微米級的矽切屑為例，原本3D分子構成的矽會因為其中的Si原子被檸檬酸根抓走，而導致3D分子崩解。至於矽晶圓洗劑中的氫氧化鉀可使上述微米級(或次微米級)的矽進一步被縮小而更容易崩解，其中氫氧化鉀的含量例如在0.25wt%～0.75 wt%之間。由於本實施例是使用特定配比的檸檬酸與碳酸氫鈉，與直接使用檸檬酸鈉作為成分之一的洗劑相比，本實施例可依據需求環境條件(以酸鹼度定義)製作調整兩者比例，所以自由度相對較高，並可藉此加強緩衝溶液特質，控制環境pH變化幅度，且本實施例不受溶解度影響溶液製備速度。相較之下，檸檬酸鈉在溶於水時需要藉由加溫才能加速溶解。至於矽晶圓洗劑中的檸檬烯則具有去除長碳鏈分子(即油污)的功效，其中檸檬烯的含量例如在0.2wt%～1 wt%之間。在本實施例中，矽晶圓洗劑的pH值例如在10.0以下，如7.0~10.0。
在本發明的實施例中，上述矽晶圓洗劑中的溶劑，例如水，且水的種類還可以分為去離子水及RO水；如以清潔效果而言，較佳的溶劑是去離子水。
本發明用於清洗矽晶圓的方法，如圖1所示。將多個矽晶圓100以支撐架102固定，並使矽晶圓100在常溫下浸泡至清洗槽104內的矽晶圓洗劑106。所述矽晶圓洗劑106即為前一實施例中的矽晶圓洗劑。而且，上述的浸泡時間可在600秒～1200秒之間，但本發明並不限於此。
以下利用實驗來驗證本發明的功效，但本發明並不侷限於以下的內容。
〈實驗例〉
首先，製備由1wt%～3 wt%的檸檬酸、2.5wt%～5 wt%的碳酸氫鈉、0.25wt%～0.75 wt%的氫氧化鉀、0.2wt%～1 wt%的檸檬烯以及水構成的矽晶圓洗劑。然後於常溫(如25°C)下將線鋸後的晶圓放置入矽晶圓洗劑內600秒。
〈對照例〉
使用市售非離子型界面活性劑作為洗劑，在與實驗例相同的條件下進行清潔矽晶圓。
〈清潔效率比較〉
分別將實驗例與對照例中清潔後的矽晶圓切割成25個切片，然後目測觀察每一個切片中油污面積的比例。如果油污面積在單一切片面積的50%以上算做1；如果油污面積的比例小於單一切片面積的50%算做0，再去計算油膜殘留的面積百分比。
結果得到實驗例的油膜殘留面積為50%；也就是說，實驗例沒有油膜殘留的面積百分比為50%。
對照例得到的油膜殘留面積是70%；也就是說，沒有油膜殘留的面積百分比為30%。
因此，實驗例的結果與對照例的結果相比，清潔效果提升了67% (即50%/30%=1.67)。
綜上所述，本發明藉由具有特定成分與具有特定比例範圍的成分(如檸檬酸與碳酸氫鈉)來構成矽晶圓洗劑，因此能達到在常溫且有效率地清潔矽晶圓的效果。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100：矽晶圓 102：支撐架 104：清洗槽 106：矽晶圓洗劑
圖1是依照本發明的一實施例的一種清洗矽晶圓的示意圖。
Claims (8)
- 一種矽晶圓洗劑，主要由以下成分組成： 1wt%～3 wt%的檸檬酸； 2.5wt%～5 wt%的碳酸氫鈉； 檸檬烯； 氫氧化鉀；以及 溶劑。
- 如申請專利範圍第1項所述的矽晶圓洗劑，其中所述檸檬烯的含量為0.2wt%～1 wt%。
- 如申請專利範圍第1項所述的矽晶圓洗劑，其中所述氫氧化鉀的含量為0.25wt%～0.75 wt%。
- 如申請專利範圍第1項所述的矽晶圓洗劑，其中所述矽晶圓洗劑的pH值在10以下。
- 如申請專利範圍第4項所述的矽晶圓洗劑，其中所述矽晶圓洗劑的pH值為7.0~10.0。
- 如申請專利範圍第1項所述的矽晶圓洗劑，其中所述溶劑包括水。
- 一種清洗矽晶圓的方法，包括 將矽晶圓在常溫下浸泡至如申請專利範圍第1至6項中任一項所述之矽晶圓洗劑。
- 如申請專利範圍第7項所述的清洗矽晶圓的方法，其中所述浸泡的時間為600秒～1200秒。
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| TW106109528A TWI638043B (zh) | 2017-03-22 | 2017-03-22 | 矽晶圓洗劑與清洗矽晶圓的方法 |
| CN201711268777.6A CN108624423A (zh) | 2017-03-22 | 2017-12-05 | 硅晶圆洗剂与清洗硅晶圆的方法 |
| US15/867,743 US20180273880A1 (en) | 2017-03-22 | 2018-01-11 | Silicon wafer cleaner and method for cleaning silicon wafer |
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| US8092628B2 (en) * | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
| CN102477358B (zh) * | 2010-11-29 | 2014-03-19 | 江苏协鑫硅材料科技发展有限公司 | 硅片清洗剂 |
| CN102403251B (zh) * | 2011-11-30 | 2013-09-11 | 合肥晶澳太阳能科技有限公司 | 一种晶体硅片预清洗液及其预清洗工艺 |
| CN103272796B (zh) * | 2013-05-23 | 2015-08-05 | 浙江中晶科技股份有限公司 | 一种高洁净度单晶硅研磨片的清洗方法 |
| CN103589521A (zh) * | 2013-10-31 | 2014-02-19 | 合肥中南光电有限公司 | 一种去除硅片表面污斑的水基清洗剂及其制备方法 |
| CN103952246A (zh) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | 一种用于太阳能硅片制造的清洗液 |
| CN105505643A (zh) * | 2015-12-23 | 2016-04-20 | 电子科技大学 | 一种硅片清洗剂及硅片清洗方法 |
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| US20060174912A1 (en) * | 2005-02-08 | 2006-08-10 | Ramin Emami | Wafer cleaning solution for cobalt electroless application |
| WO2007049435A1 (ja) * | 2005-10-26 | 2007-05-03 | Shin-Etsu Handotai Co., Ltd. | 半導体ウエーハの製造方法及び半導体ウエーハの洗浄方法 |
| CN103571664A (zh) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | 一种环保太阳能硅片清洗剂及其制备方法 |
| CN103571647A (zh) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | 一种太阳能级硅片水基清洗剂及其制备方法 |
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| CN108624423A (zh) | 2018-10-09 |
| US20180273880A1 (en) | 2018-09-27 |
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