JP5682556B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5682556B2 JP5682556B2 JP2011518619A JP2011518619A JP5682556B2 JP 5682556 B2 JP5682556 B2 JP 5682556B2 JP 2011518619 A JP2011518619 A JP 2011518619A JP 2011518619 A JP2011518619 A JP 2011518619A JP 5682556 B2 JP5682556 B2 JP 5682556B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating film
- mosfet
- layer
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 239000010410 layer Substances 0.000 claims description 158
- 239000011229 interlayer Substances 0.000 claims description 122
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 40
- 239000012535 impurity Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 288
- 229910010271 silicon carbide Inorganic materials 0.000 description 91
- 238000000034 method Methods 0.000 description 75
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 64
- 238000004519 manufacturing process Methods 0.000 description 57
- 239000010936 titanium Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 34
- 230000004888 barrier function Effects 0.000 description 26
- 230000008569 process Effects 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 18
- 238000005275 alloying Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 125000004430 oxygen atom Chemical group O* 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 238000006722 reduction reaction Methods 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
まず、実施の形態1におけるMOSFETについて説明する。図1を参照して、実施の形態1におけるMOSFET100は、炭化珪素(SiC)からなり、導電型がn型(第1導電型)の基板であるn+SiC基板11と、SiCからなり、導電型がn型(第1導電型)の半導体層としてのn−SiC層12と、導電型がp型(第2導電型)の第2導電型領域としての一対のpボディ13と、導電型がn型(第1導電型)の高濃度第1導電型領域としてのn+ソース領域14と、導電型がp型(第2導電型)の高濃度第2導電型領域としてのp+領域18とを備えている。n+SiC基板11は、高濃度のn型不純物(導電型がn型である不純物)、たとえばN(窒素)を含んでいる。
図13を参照して、実施の形態2におけるMOSFET300は、MOSFET100と基本的に同様の構成を備えている。しかしMOSFET300においては、MOSFET100におけるゲート酸化膜15が、SixNyから形成されるゲート絶縁膜150となっている。
図21を参照して、実施の形態3におけるMOSFET400は、MOSFET100と基本的に同様の構成を備えている。しかしMOSFET400においては、層間絶縁膜がSiO2からなる層間絶縁膜21と、SixNyからなる層間絶縁膜210との二重構造となっている。
図28を参照して、実施の形態4におけるMOSFET500は、MOSFET400と基本的に同様の構成を備えている。しかしMOSFET500においては、たとえば上述したMOSFET300と同様に、ゲート酸化膜15の左右方向に関する長さが、ゲート電極17よりも長く、SiO2からなる層間絶縁膜21の左右方向に関する長さに等しくなっている。そして当該ゲート酸化膜15の左右方向の端部はSixNyからなる層間絶縁膜210と接触している。
図35を参照して、実施の形態5におけるMOSFET600は、上述した各実施の形態のMOSFETと基本的に同様の構成を備えている。しかしMOSFET600においては、SixNyからなる層間絶縁膜210の外周を覆うようにバリア層60が配置されている。当該バリア層60は、ソースコンタクト電極16とゲート酸化膜15との間にも配置されている。この点において、MOSFET600は上述した他のMOSFETと異なる。
図41を参照して、実施の形態6におけるMOSFET700は、MOSFET600と基本的に同様の構成を備えている。しかしMOSFET700においては、ソースコンタクト電極16とバリア層60とが不連続となっており、両者の間に間隙32が存在する。この点においてのみ、MOSFET700はMOSFET600と異なる。
ち実施の形態6について、上述しなかった構成や条件、手順や効果などは、全て実施の形態5に順ずる。
実施の形態7におけるMOSFET800は、図44を参照して、基本的にはMOSFET600と同様の態様を備えている。しかしMOSFET800においては、たとえばSixNyからなる層間絶縁膜210の代わりに、SiO2からなる層間絶縁膜21が用いられている。MOSFET800は、以上の点についてのみMOSFET600と異なる。同様に、当実施の形態7におけるMOSFET900は、図45を参照して、基本的にはMOSFET700と同様の態様を備えている。しかしMOSFET900においては、たとえばSixNyからなる層間絶縁膜210の代わりに、SiO2からなる層間絶縁膜21が用いられている。MOSFET900は、以上の点についてのみMOSFET700と異なる。
Claims (3)
- SiC層と、
前記SiC層の主表面上に形成され、Alを含む1つの合金層からなるオーミック電極と、
前記SiC層の前記主表面上において前記オーミック電極と間隔を隔てて配置された他の電極と、
前記オーミック電極と前記他の電極との間に位置し、SiO 2 以外の材質から形成される絶縁層と、
前記SiC層の内部に形成された第1導電型の第1不純物領域および第2導電型の第2不純物領域とを備え、
前記オーミック電極は、前記第1不純物領域および前記第2不純物領域の双方に対してオーミック接合可能であり、
前記オーミック電極は、前記SiC層の主表面に垂直な方向から見て前記第1不純物層および前記第2不純物層の双方にオーバーラップするように形成され、
前記オーミック電極と前記絶縁層とが隣接した状態で1200℃以下の加熱を行った場合での、前記絶縁層における電気抵抗の低下率が5%以下であり、
前記絶縁層における電気抵抗の低下率は、(a−b)/aという計算式により規定され、
aは1200℃以下の加熱を行なう前の絶縁層の電気抵抗値を、bは1200℃以下の加熱を行なった後の絶縁層の電気抵抗値を表示する、半導体装置。 - 前記絶縁層は前記オーミック電極と前記他の電極とを電気的に絶縁するための層間絶縁膜であり、前記層間絶縁膜の少なくとも前記オーミック電極に対向する表面は、窒化珪素または酸窒化珪素からなる、請求項1に記載の半導体装置。
- 前記半導体装置は前記SiC層と前記他の電極との間に厚みが30nm以上100nm以下の極薄絶縁膜をさらに備えており、
前記極薄絶縁膜および前記絶縁層と前記オーミック電極との間に間隙が配置されている、請求項1または請求項2に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011518619A JP5682556B2 (ja) | 2009-10-05 | 2010-07-08 | 半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009231647 | 2009-10-05 | ||
JP2009231647 | 2009-10-05 | ||
PCT/JP2010/061613 WO2011043116A1 (ja) | 2009-10-05 | 2010-07-08 | 半導体装置 |
JP2011518619A JP5682556B2 (ja) | 2009-10-05 | 2010-07-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011043116A1 JPWO2011043116A1 (ja) | 2013-03-04 |
JP5682556B2 true JP5682556B2 (ja) | 2015-03-11 |
Family
ID=43856596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011518619A Expired - Fee Related JP5682556B2 (ja) | 2009-10-05 | 2010-07-08 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8963163B2 (ja) |
EP (1) | EP2487720A4 (ja) |
JP (1) | JP5682556B2 (ja) |
KR (1) | KR20120065962A (ja) |
CN (1) | CN102227812A (ja) |
TW (1) | TW201133835A (ja) |
WO (1) | WO2011043116A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4858791B2 (ja) * | 2009-05-22 | 2012-01-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5728954B2 (ja) * | 2011-01-13 | 2015-06-03 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2013122982A (ja) * | 2011-12-12 | 2013-06-20 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP6261155B2 (ja) * | 2012-02-20 | 2018-01-17 | 富士電機株式会社 | SiC半導体デバイスの製造方法 |
KR101386119B1 (ko) * | 2012-07-26 | 2014-04-21 | 한국전기연구원 | SiC MOSFET의 오믹 접합 형성방법 |
JP2014038899A (ja) * | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
JP6068918B2 (ja) * | 2012-10-15 | 2017-01-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
WO2015052782A1 (ja) * | 2013-10-08 | 2015-04-16 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2016081995A (ja) * | 2014-10-14 | 2016-05-16 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP6690985B2 (ja) * | 2016-02-24 | 2020-04-28 | 株式会社神戸製鋼所 | オーミック電極 |
CN109524456A (zh) * | 2018-11-19 | 2019-03-26 | 中国电子科技集团公司第十三研究所 | 适用于高温的碳化硅欧姆接触制作方法及碳化硅功率器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093742A (ja) * | 2000-09-18 | 2002-03-29 | National Institute Of Advanced Industrial & Technology | オーミック電極構造体、その製造方法、半導体装置及び半導体装置の製造方法 |
JP2008192691A (ja) * | 2007-02-01 | 2008-08-21 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE504916C2 (sv) | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
JPH10173169A (ja) * | 1996-12-16 | 1998-06-26 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4003296B2 (ja) | 1998-06-22 | 2007-11-07 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
JP3952978B2 (ja) * | 2003-03-24 | 2007-08-01 | 日産自動車株式会社 | 炭化珪素半導体素子 |
JP2005276978A (ja) * | 2004-03-24 | 2005-10-06 | Nissan Motor Co Ltd | オーミック電極構造体の製造方法、オーミック電極構造体、半導体装置の製造方法および半導体装置 |
CN101578705B (zh) * | 2007-07-20 | 2012-05-30 | 松下电器产业株式会社 | 碳化硅半导体装置及其制造方法 |
-
2010
- 2010-07-08 US US13/131,163 patent/US8963163B2/en active Active
- 2010-07-08 JP JP2011518619A patent/JP5682556B2/ja not_active Expired - Fee Related
- 2010-07-08 EP EP10821787.8A patent/EP2487720A4/en not_active Withdrawn
- 2010-07-08 KR KR1020117011670A patent/KR20120065962A/ko not_active Application Discontinuation
- 2010-07-08 WO PCT/JP2010/061613 patent/WO2011043116A1/ja active Application Filing
- 2010-07-08 CN CN2010800033467A patent/CN102227812A/zh active Pending
- 2010-07-12 TW TW099122891A patent/TW201133835A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093742A (ja) * | 2000-09-18 | 2002-03-29 | National Institute Of Advanced Industrial & Technology | オーミック電極構造体、その製造方法、半導体装置及び半導体装置の製造方法 |
JP2008192691A (ja) * | 2007-02-01 | 2008-08-21 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8963163B2 (en) | 2015-02-24 |
CN102227812A (zh) | 2011-10-26 |
TW201133835A (en) | 2011-10-01 |
EP2487720A4 (en) | 2014-01-01 |
JPWO2011043116A1 (ja) | 2013-03-04 |
KR20120065962A (ko) | 2012-06-21 |
US20110227096A1 (en) | 2011-09-22 |
WO2011043116A1 (ja) | 2011-04-14 |
EP2487720A1 (en) | 2012-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5682556B2 (ja) | 半導体装置 | |
JP5581642B2 (ja) | 半導体装置の製造方法 | |
JP4858791B2 (ja) | 半導体装置およびその製造方法 | |
JP4291875B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP4965576B2 (ja) | 半導体装置及びその製造方法 | |
JP5745974B2 (ja) | 半導体装置およびその製造方法 | |
JP2007066944A (ja) | 炭化珪素半導体装置及びその製造方法 | |
JP5171363B2 (ja) | 半導体装置の製造方法 | |
JP6295797B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP4501488B2 (ja) | 炭化珪素半導体のオーミック電極及びその製造方法 | |
JP2009043880A (ja) | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 | |
JP3759145B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2014216529A (ja) | 炭化珪素半導体装置の製造方法 | |
JP6500912B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP5460768B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2024080136A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2024039821A (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP6155553B2 (ja) | 炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130723 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140605 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141216 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141229 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5682556 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |