JP5622500B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5622500B2 JP5622500B2 JP2010207621A JP2010207621A JP5622500B2 JP 5622500 B2 JP5622500 B2 JP 5622500B2 JP 2010207621 A JP2010207621 A JP 2010207621A JP 2010207621 A JP2010207621 A JP 2010207621A JP 5622500 B2 JP5622500 B2 JP 5622500B2
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- oxide semiconductor
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Description
本実施の形態では、論理回路の一形態について説明する。
本実施の形態では、本発明の一態様のシフトレジスタについて説明する。なお、一例として上記実施の形態1の図3に示す順序論理回路を単位とする別の順序論理回路を説明する。
本実施の形態では、実施の形態1で例示した本発明の一態様の組み合わせ論理回路に、第4の端子により閾値の制御が可能なトランジスタを適用した回路構成について図16及び図17を用いて説明する。
本実施の形態では、上記実施の形態とは異なる構成のトランジスタを用いた論理回路について説明する。
本実施の形態では、論理回路の作製方法について説明する。なお、本実施の形態では、一例として、図10に示す論理回路の作製方法について説明する。
本実施の形態では、上記実施の形態に示した論理回路を適用可能なデバイスの一例として表示装置について説明する。
本実施の形態では、上記実施の形態6に示した表示装置の一例として液晶表示装置について説明する。
本実施の形態では、上記実施の形態6に示した表示装置の一例として発光表示装置について説明する。また、本実施の形態では、一例としてエレクトロルミネッセンスを発光素子として利用した発光表示装置について説明する。
本実施の形態では、上記実施の形態6に示す表示装置の一例として電子ペーパについて説明する。
本実施の形態では、上記実施の形態6における表示装置の一形態としてシステムオンパネル型の表示装置について説明する。
上記実施の形態6乃至実施の形態10に示す表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 トランジスタ
103 電源線
104 電源線
105 ノード
106 トランジスタ
107 トランジスタ
108 容量素子
109 容量素子
110 ノード
111 トランジスタ
113 トランジスタ
114 ノード
115 ノード
125 ノード
200 基板
202 ゲート絶縁層
203 コンタクトホール
207 酸化物絶縁膜
208 保護絶縁層
210 基板
211a ゲート電極
211b ゲート電極
212 ゲート絶縁層
212a ゲート電極
213 酸化物半導体層
213a 酸化物半導体層
213b 酸化物半導体層
213c 酸化物半導体層
214a 酸化物半導体層
214b 酸化物半導体層
214c 酸化物半導体層
214d 酸化物半導体層
215 電極
215a 電極
215b 電極
215c 電極
216 電極
217 電極
223a 酸化物半導体層
223b 酸化物半導体層
251 トランジスタ
252 トランジスタ
321 トランジスタ
322 トランジスタ
323 トランジスタ
324 電源線
325 電源線
326 ノード
580 基板
581 TFT
584 絶縁層
585 絶縁層
587 電極
588 電極
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填剤
596 基板
701 画素部
702 走査線駆動回路
703 信号線駆動回路
704 画素
803 走査線駆動回路
804 走査線
805 信号線
821 トランジスタ
822 液晶素子
823 容量素子
851 トランジスタ
852 容量素子
853 トランジスタ
854 発光素子
855 走査線
856 信号線
900 シフトレジスタ
901 レベルシフタ
902 バッファ
903 シフトレジスタ
904 ラッチ回路
905 ラッチ回路
906 レベルシフタ
907 バッファ
1121 インバータ
1122 インバータ
1123 インバータ
2000 基板
2001 ゲート電極
2002 絶縁膜
2003 酸化物半導体層
2004a 酸化物半導体層
2004b 酸化物半導体層
2005a 電極
2005b 電極
2007 保護絶縁層
2008 電極
2020 電極
2022 電極
2023 電極
2024 電極
2028 電極
2029 電極
2050 端子
2051 端子
2052 ゲート絶縁層
2053 接続電極
2054 保護絶縁膜
2055 透明導電膜
2056 電極
2070 TFT
2111 ゲート電極
2112 ゲート電極
2131 酸化物半導体層
2132 酸化物半導体層
2141a 酸化物半導体層
2141b 酸化物半導体層
2142a 酸化物半導体層
2142b 酸化物半導体層
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
3011 論理回路
3012 論理回路
3013 論理回路
3111 トランジスタ
3112 トランジスタ
3113 トランジスタ
3121A インバータ
3121B インバータ
3121C インバータ
3122A インバータ
3122B インバータ
3122C インバータ
3123A インバータ
3123B インバータ
3123C インバータ
3131 トランジスタ
3131B インバータ
3132 トランジスタ
3133 トランジスタ
3140 NAND回路
3141 NAND回路
3142 NAND回路
3143 NAND回路
3171 ノード
3172 ノード
3173 ノード
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 TFT
4011 TFT
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極
4031 対向電極
4032 絶縁層
4035 スペーサ
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 TFT
4510 TFT
4511 発光素子
4512 電界発光層
4513 電極
4515 接続端子電極
4516 端子電極
4517 電極
4518a FPC
4519 異方性導電膜
4520 隔壁
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9000 携帯電話機
9001 筐体
9002 表示部
9003 操作ボタン
9004 外部接続ポート
9005 スピーカ
9006 マイク
9400 通信装置
9401 筐体
9402 操作ボタン
9403 外部入力端子
9404 マイク
9405 スピーカ
9406 発光部
9410 表示装置
9411 筐体
9412 表示部
9413 操作ボタン
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 入力手段(操作キー)
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (1)
- 第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタは、第1の酸化物半導体層と、第1のゲート電極と、第1のソース電極と、第1のドレイン電極と、を有し、
前記第2のトランジスタは、第2の酸化物半導体層と、第2のゲート電極と、第2のソース電極と、第2のドレイン電極と、を有し、
前記第1の酸化物半導体層は、絶縁層を介して前記第1のゲート電極と重なる領域を有し、
前記第2の酸化物半導体層は、前記絶縁層を介して前記第2のゲート電極と重なる領域を有し、
前記絶縁層は、前記第1の酸化物半導体層の下方、及び、前記第2の酸化物半導体層の下方に設けられ、
前記第1のソース電極は、前記第1の酸化物半導体層の上方に設けられ、
前記第1のドレイン電極は、前記第1の酸化物半導体層の上方に設けられ、
前記第2のソース電極は、前記第2の酸化物半導体層の上方に設けられ、
前記第2のドレイン電極は、前記第2の酸化物半導体層の上方に設けられ、
酸化物絶縁層は、前記第1のソース電極上方、前記第1のドレイン電極上方、前記第2のソース電極上方、及び、前記第2のドレイン電極上方に設けられ、
前記第1の酸化物半導体層は、第1の領域と、第2の領域と、第3の領域と、第4の領域と、第5の領域と、第6の領域と、を有し、
前記第3の領域は、前記第1のソース電極と重なり、
前記第4の領域は、前記第1のドレイン電極と重なり、
前記第5の領域は、前記第3の領域の下方に設けられ、
前記第6の領域は、前記第4の領域の下方に設けられ、
前記第3の領域の導電率及び前記第4の領域の導電率は、前記第5の領域の導電率及び前記第6の領域の導電率よりも高く、
前記第1の領域は、前記第3の領域と前記第4の領域との間に設けられ、
前記第1の領域は、前記酸化物絶縁層と接し、
前記第2の領域は、前記第1の領域の下方に設けられ、
前記第1の領域の抵抗率は、前記第2の領域の抵抗率よりも高く、
前記第2の酸化物半導体層は、第7の領域と、第8の領域と、第9の領域と、第10の領域と、第11の領域と、を有し、
前記第8の領域は、前記第2のソース電極と重なり、
前記第9の領域は、前記第2のドレイン電極と重なり、
前記第10の領域は、前記第8の領域の下方に設けられ、
前記第11の領域は、前記第9の領域の下方に設けられ、
前記第8の領域の導電率及び前記第9の領域の導電率は、前記第10の領域の導電率及び前記第11の領域の導電率よりも高く、
前記第7の領域は、前記第8の領域と前記第9の領域との間に設けられ、
前記第7の領域は、前記酸化物絶縁層と接し、
前記第7の領域の抵抗率は、前記第2の領域の抵抗率よりも高く、
前記第1の酸化物半導体層の膜厚は、前記第2の酸化物半導体層の膜厚よりも厚いことを特徴とする半導体装置。
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---|---|---|---|---|
JP5676945B2 (ja) * | 2010-07-08 | 2015-02-25 | キヤノン株式会社 | 電子装置、電子装置の素子分離方法、電子装置の製造方法、及び電子装置を備えた表示装置 |
KR101426515B1 (ko) * | 2010-09-15 | 2014-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
TWI568181B (zh) * | 2011-05-06 | 2017-01-21 | 半導體能源研究所股份有限公司 | 邏輯電路及半導體裝置 |
KR101874144B1 (ko) | 2011-05-06 | 2018-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
KR101952570B1 (ko) * | 2011-05-13 | 2019-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI536502B (zh) | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
US8709889B2 (en) * | 2011-05-19 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and manufacturing method thereof |
US8779799B2 (en) | 2011-05-19 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit |
KR102093909B1 (ko) * | 2011-05-19 | 2020-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 및 회로의 구동 방법 |
TWI559683B (zh) * | 2011-05-20 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體積體電路 |
US8508256B2 (en) | 2011-05-20 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
JP5951351B2 (ja) | 2011-05-20 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 加算器及び全加算器 |
JP6013680B2 (ja) * | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI534956B (zh) * | 2011-05-27 | 2016-05-21 | 半導體能源研究所股份有限公司 | 調整電路及驅動調整電路之方法 |
US8952377B2 (en) * | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2013084333A (ja) * | 2011-09-28 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | シフトレジスタ回路 |
TWI452553B (zh) | 2011-12-30 | 2014-09-11 | Au Optronics Corp | 製作可撓式顯示裝置之方法 |
US8988152B2 (en) * | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5946318B2 (ja) * | 2012-05-02 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2013180040A1 (en) * | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9135182B2 (en) | 2012-06-01 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Central processing unit and driving method thereof |
US9625764B2 (en) * | 2012-08-28 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
KR102046996B1 (ko) | 2012-10-16 | 2019-11-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
CN104823283B (zh) * | 2012-11-30 | 2018-04-27 | 株式会社半导体能源研究所 | 半导体装置 |
JP6406926B2 (ja) * | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102040011B1 (ko) * | 2013-12-26 | 2019-11-05 | 엘지디스플레이 주식회사 | 디스플레이 장치의 정전기 방지 장치와 이의 제조 방법 |
JP6615490B2 (ja) | 2014-05-29 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
TWI699897B (zh) | 2014-11-21 | 2020-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
KR20160087024A (ko) * | 2015-01-12 | 2016-07-21 | 삼성디스플레이 주식회사 | 박막트랜지스터 및 그의 제조방법 |
US10163948B2 (en) * | 2015-07-23 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
JP6864456B2 (ja) * | 2015-10-15 | 2021-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN106486499B (zh) * | 2015-10-29 | 2019-08-06 | 陆磊 | 一种电路结构及制造方法和显示器面板 |
KR102652999B1 (ko) * | 2016-04-26 | 2024-04-01 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치 |
WO2017187301A1 (en) * | 2016-04-28 | 2017-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
CN105957872A (zh) * | 2016-07-18 | 2016-09-21 | 京东方科技集团股份有限公司 | 阵列基板的制作方法、阵列基板及显示装置 |
TWI610283B (zh) * | 2016-12-23 | 2018-01-01 | 友達光電股份有限公司 | 顯示裝置 |
US10211825B2 (en) * | 2017-06-07 | 2019-02-19 | Globalfoundries Inc. | Circuits having a switch with back-gate bias |
EP3621119A1 (en) * | 2018-09-04 | 2020-03-11 | Murata Manufacturing Co., Ltd. | Method for forming an electronic product comprising two capacitors having different dielectric thicknesses, and corresponding electronic product |
CN110473503B (zh) * | 2019-08-22 | 2021-03-02 | 武汉天马微电子有限公司 | 一种像素电路、显示面板和显示装置 |
CN113078112B (zh) * | 2021-03-29 | 2023-03-31 | 电子科技大学 | 一种氧化物基耗尽型负载反相器的制备方法 |
Family Cites Families (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01194351A (ja) * | 1988-01-29 | 1989-08-04 | Hitachi Ltd | 薄膜半導体装置 |
EP0445535B1 (en) | 1990-02-06 | 1995-02-01 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
JP2814319B2 (ja) * | 1991-08-29 | 1998-10-22 | 株式会社日立製作所 | 液晶表示装置及びその製造方法 |
JP2572003B2 (ja) | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
US5949397A (en) | 1994-08-16 | 1999-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Peripheral driver circuit of Liquid crystal electro-optical device |
JP4598009B2 (ja) * | 1994-08-16 | 2010-12-15 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置の周辺駆動回路 |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
US5847410A (en) | 1995-11-24 | 1998-12-08 | Semiconductor Energy Laboratory Co. | Semiconductor electro-optical device |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP2001284592A (ja) | 2000-03-29 | 2001-10-12 | Sony Corp | 薄膜半導体装置及びその駆動方法 |
US7633471B2 (en) | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
US6828587B2 (en) | 2000-06-19 | 2004-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
US6549071B1 (en) | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
JP4069648B2 (ja) | 2002-03-15 | 2008-04-02 | カシオ計算機株式会社 | 半導体装置および表示駆動装置 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP2003280034A (ja) | 2002-03-20 | 2003-10-02 | Sharp Corp | Tft基板およびそれを用いる液晶表示装置 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP2003309266A (ja) | 2002-04-17 | 2003-10-31 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子の製造方法 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
KR100870522B1 (ko) | 2002-09-17 | 2008-11-26 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4314843B2 (ja) | 2003-03-05 | 2009-08-19 | カシオ計算機株式会社 | 画像読取装置及び個人認証システム |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP2004336010A (ja) * | 2003-04-16 | 2004-11-25 | Seiko Epson Corp | 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
KR101019045B1 (ko) | 2003-11-25 | 2011-03-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US8003449B2 (en) | 2004-11-26 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a reverse staggered thin film transistor |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4981283B2 (ja) * | 2005-09-06 | 2012-07-18 | キヤノン株式会社 | アモルファス酸化物層を用いた薄膜トランジスタ |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
JP5250929B2 (ja) | 2005-11-30 | 2013-07-31 | 凸版印刷株式会社 | トランジスタおよびその製造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP4277874B2 (ja) * | 2006-05-23 | 2009-06-10 | エプソンイメージングデバイス株式会社 | 電気光学装置の製造方法 |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
KR101217555B1 (ko) | 2006-06-28 | 2013-01-02 | 삼성전자주식회사 | 접합 전계 효과 박막 트랜지스터 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP2008124392A (ja) * | 2006-11-15 | 2008-05-29 | Sharp Corp | 半導体装置、その製造方法及び表示装置 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
JP2008171989A (ja) * | 2007-01-11 | 2008-07-24 | Toppan Printing Co Ltd | 電界効果型トランジスタ及びその製造方法 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR101410926B1 (ko) | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR100858088B1 (ko) | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
JP5294651B2 (ja) | 2007-05-18 | 2013-09-18 | キヤノン株式会社 | インバータの作製方法及びインバータ |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
CN101681928B (zh) * | 2007-05-31 | 2012-08-29 | 佳能株式会社 | 使用氧化物半导体的薄膜晶体管的制造方法 |
JPWO2009034953A1 (ja) * | 2007-09-10 | 2010-12-24 | 出光興産株式会社 | 薄膜トランジスタ |
JP2009130209A (ja) * | 2007-11-26 | 2009-06-11 | Fujifilm Corp | 放射線撮像素子 |
JP5213429B2 (ja) * | 2007-12-13 | 2013-06-19 | キヤノン株式会社 | 電界効果型トランジスタ |
CN103258857B (zh) * | 2007-12-13 | 2016-05-11 | 出光兴产株式会社 | 使用了氧化物半导体的场效应晶体管及其制造方法 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP2009200430A (ja) * | 2008-02-25 | 2009-09-03 | Hitachi Displays Ltd | 表示装置とその製造方法 |
TWI469354B (zh) | 2008-07-31 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
CN101714546B (zh) | 2008-10-03 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
KR101435501B1 (ko) | 2008-10-03 | 2014-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR102095625B1 (ko) | 2008-10-24 | 2020-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101631454B1 (ko) | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
KR101432764B1 (ko) | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
KR102025505B1 (ko) | 2008-11-21 | 2019-09-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI540647B (zh) | 2008-12-26 | 2016-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR101034686B1 (ko) * | 2009-01-12 | 2011-05-16 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
JP5558222B2 (ja) * | 2010-06-18 | 2014-07-23 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
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TW201126696A (en) | 2011-08-01 |
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