JP5520337B2 - 広視野角液晶表示装置及びその製造方法 - Google Patents
広視野角液晶表示装置及びその製造方法 Download PDFInfo
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- JP5520337B2 JP5520337B2 JP2012110543A JP2012110543A JP5520337B2 JP 5520337 B2 JP5520337 B2 JP 5520337B2 JP 2012110543 A JP2012110543 A JP 2012110543A JP 2012110543 A JP2012110543 A JP 2012110543A JP 5520337 B2 JP5520337 B2 JP 5520337B2
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- liquid crystal
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 109
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 120
- 230000005540 biological transmission Effects 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 description 53
- 238000000034 method Methods 0.000 description 26
- 230000005684 electric field Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
3、30:液晶分子
4、270:開口部
5:突起
12、22:透明電極
13、23:偏光板
14、24、240:配向膜
15、25:電極
100:液晶層
110:ブラックマトリックス
111、222、333、444:透過軸
120:カラーフィルタ
133、233:補償フィルム
140、240:垂直配向膜
170、171、172:突起パターン
200:画素電極
210:ゲート線
220:ゲート絶縁膜
251:ダイヤモンド型部分
Claims (5)
- 第1基板と、
前記第1基板上に形成されているゲート線と、
前記第1基板上に形成されている画素電極と、
前記第1基板と対向する第2基板と、
前記第2基板上に形成されている共通電極と、
を含み、
前記画素電極と前記共通電極のうちの少なくとも一つは切開パターンを有しており、
前記切開パターンは、
前記ゲート線と実質的に平行な方向に伸びている第1切開部と、
前記ゲート線に対して斜めの方向に伸びている第2切開部と、
前記ゲート線に対して斜めの方向に伸びており、前記第2切開部と異なる方向に伸びている第3切開部と、
を含み、
前記第1切開部の一端は山型形状であって、前記第1切開部の前記一端から他端に向かって前記山型形状に連結される部分から前記他端に行くほど厚さが薄くなり、
前記第2切開部は前記第3切開部と実際的に90度の角度をなすことを特徴とする液晶表示装置。 - 前記第1切開部は、隣接する2本の前記ゲート線の中間に位置し、
前記第2切開部及び前記第3切開部は、前記第1切開部の長手方向を通る直線に対して線対称である、請求項1に記載の液晶表示装置。 - 透過軸が互いに直角となるように配置された2つの偏光板をさらに含み、
前記第2切開部は、前記2つの偏光板のうちの一方の偏光板の透過軸と45度の角度をなし、
前記第3切開部は、前記2つの偏光板のうちの他方の偏光板の透過軸と45度の角度をなす、請求項1または2に記載の液晶表示装置。 - 前記第1切開部の長さは、前記第2切開部及び前記第3切開部の長さより短い、請求項1から3のいずれかに記載の液晶表示装置。
- 前記画素電極が前記切開パターンを有することを特徴とする請求項1から4のいずれかに記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980017734A KR100309918B1 (ko) | 1998-05-16 | 1998-05-16 | 광시야각액정표시장치및그제조방법 |
KR1998P17734 | 1998-05-16 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008302370A Division JP5527962B2 (ja) | 1998-05-16 | 2008-11-27 | 広視野角液晶表示装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012177932A JP2012177932A (ja) | 2012-09-13 |
JP5520337B2 true JP5520337B2 (ja) | 2014-06-11 |
Family
ID=19537419
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13498199A Expired - Fee Related JP4130274B2 (ja) | 1998-05-16 | 1999-05-14 | 広視野角液晶表示装置及びその製造方法 |
JP2008072075A Expired - Lifetime JP4336730B2 (ja) | 1998-05-16 | 2008-03-19 | 広視野角液晶表示装置及びその製造方法 |
JP2008302370A Expired - Lifetime JP5527962B2 (ja) | 1998-05-16 | 2008-11-27 | 広視野角液晶表示装置及びその製造方法 |
JP2012110544A Expired - Fee Related JP5326074B2 (ja) | 1998-05-16 | 2012-05-14 | 広視野角液晶表示装置及びその製造方法 |
JP2012110543A Expired - Lifetime JP5520337B2 (ja) | 1998-05-16 | 2012-05-14 | 広視野角液晶表示装置及びその製造方法 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13498199A Expired - Fee Related JP4130274B2 (ja) | 1998-05-16 | 1999-05-14 | 広視野角液晶表示装置及びその製造方法 |
JP2008072075A Expired - Lifetime JP4336730B2 (ja) | 1998-05-16 | 2008-03-19 | 広視野角液晶表示装置及びその製造方法 |
JP2008302370A Expired - Lifetime JP5527962B2 (ja) | 1998-05-16 | 2008-11-27 | 広視野角液晶表示装置及びその製造方法 |
JP2012110544A Expired - Fee Related JP5326074B2 (ja) | 1998-05-16 | 2012-05-14 | 広視野角液晶表示装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (4) | US6710837B1 (ja) |
JP (5) | JP4130274B2 (ja) |
KR (1) | KR100309918B1 (ja) |
TW (1) | TW584779B (ja) |
Families Citing this family (459)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3966614B2 (ja) | 1997-05-29 | 2007-08-29 | 三星電子株式会社 | 広視野角液晶表示装置 |
TWI271590B (en) * | 1997-06-12 | 2007-01-21 | Sharp Kk | Liquid crystal display device |
KR100309918B1 (ko) * | 1998-05-16 | 2001-12-17 | 윤종용 | 광시야각액정표시장치및그제조방법 |
KR100354904B1 (ko) * | 1998-05-19 | 2002-12-26 | 삼성전자 주식회사 | 광시야각액정표시장치 |
KR100283511B1 (ko) * | 1998-05-20 | 2001-03-02 | 윤종용 | 광시야각 액정 표시장치 |
JP3957430B2 (ja) * | 1998-09-18 | 2007-08-15 | シャープ株式会社 | 液晶表示装置 |
US6879364B1 (en) * | 1998-09-18 | 2005-04-12 | Fujitsu Display Technologies Corporation | Liquid crystal display apparatus having alignment control for brightness and response |
JP3926056B2 (ja) | 1999-03-16 | 2007-06-06 | シャープ株式会社 | 液晶表示装置 |
JP3969887B2 (ja) * | 1999-03-19 | 2007-09-05 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
US6657695B1 (en) * | 1999-06-30 | 2003-12-02 | Samsung Electronics Co., Ltd. | Liquid crystal display wherein pixel electrode having openings and protrusions in the same substrate |
JP4468529B2 (ja) * | 1999-07-09 | 2010-05-26 | シャープ株式会社 | 液晶表示装置 |
JP4401538B2 (ja) * | 1999-07-30 | 2010-01-20 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
US6927824B1 (en) | 1999-09-16 | 2005-08-09 | Fujitsu Display Technologies Corporation | Liquid crystal display device and thin film transistor substrate |
KR100354906B1 (ko) | 1999-10-01 | 2002-09-30 | 삼성전자 주식회사 | 광시야각 액정 표시 장치 |
JP2001142073A (ja) * | 1999-11-05 | 2001-05-25 | Koninkl Philips Electronics Nv | 液晶表示装置 |
KR100606958B1 (ko) * | 2000-01-14 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시소자 |
KR100512071B1 (ko) | 1999-12-09 | 2005-09-02 | 엘지.필립스 엘시디 주식회사 | 광시야각을 갖는 액정표시장치 |
KR100504532B1 (ko) * | 1999-12-28 | 2005-08-03 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시소자 |
KR100587364B1 (ko) * | 2000-01-12 | 2006-06-08 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시소자 |
KR100612995B1 (ko) * | 2000-03-13 | 2006-08-14 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용되는 박막 트랜지스터 기판 |
US6803979B2 (en) * | 2000-04-19 | 2004-10-12 | Lg.Philips Lcd Co., Ltd. | In-plane switching LCD panel with transverse dielectric protrusions |
KR100612994B1 (ko) * | 2000-05-12 | 2006-08-14 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용되는 기판 |
TW573190B (en) * | 2000-08-14 | 2004-01-21 | Samsung Electronics Co Ltd | Liquid crystal display and fabricating method thereof |
KR100345961B1 (en) | 2001-01-12 | 2002-08-01 | Samsung Electronics Co Ltd | Liquid crystal display with wide viewing angle |
US7408605B2 (en) | 2000-09-19 | 2008-08-05 | Samsung Electronics Co., Ltd. | Liquid crystal display panel |
KR100656911B1 (ko) * | 2000-09-19 | 2006-12-12 | 삼성전자주식회사 | 액정 표시 장치용 기판 |
JP3877129B2 (ja) | 2000-09-27 | 2007-02-07 | シャープ株式会社 | 液晶表示装置 |
KR100720093B1 (ko) * | 2000-10-04 | 2007-05-18 | 삼성전자주식회사 | 액정 표시 장치 |
KR100482468B1 (ko) * | 2000-10-10 | 2005-04-14 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 구동 액정 표시 장치 |
TW562976B (en) | 2000-11-27 | 2003-11-21 | Au Optronics Corp | Pixel structure in liquid crystal display |
KR100448045B1 (ko) * | 2000-12-05 | 2004-09-10 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 구동 모드 액정 표시 장치 |
KR100685915B1 (ko) * | 2000-12-13 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정셀의 두께 공차가 큰 액정 프로젝터 |
KR100674237B1 (ko) * | 2000-12-29 | 2007-01-25 | 비오이 하이디스 테크놀로지 주식회사 | 광시야각의 수직배향 액정표시장치 |
TW535966U (en) * | 2001-02-02 | 2003-06-01 | Koninkl Philips Electronics Nv | Display device |
JP4511058B2 (ja) * | 2001-02-06 | 2010-07-28 | シャープ株式会社 | 液晶表示装置及び液晶配向方法 |
KR100507275B1 (ko) * | 2001-03-28 | 2005-08-09 | 비오이 하이디스 테크놀로지 주식회사 | Han모드를 적용한 프린지 필드 구동 모드 액정표시장치 |
US6977704B2 (en) * | 2001-03-30 | 2005-12-20 | Fujitsu Display Technologies Corporation | Liquid crystal display |
KR100717179B1 (ko) * | 2001-03-31 | 2007-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 구동 액정표시장치 제조방법 |
JP4148657B2 (ja) | 2001-04-04 | 2008-09-10 | シャープ株式会社 | 液晶表示装置 |
KR100471397B1 (ko) * | 2001-05-31 | 2005-02-21 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 스위칭 액정표시장치 및 그 제조방법 |
KR100466395B1 (ko) * | 2001-05-31 | 2005-01-13 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터 액정표시장치 |
JP4334166B2 (ja) | 2001-08-01 | 2009-09-30 | シャープ株式会社 | 液晶表示装置及び配向膜の露光装置及び配向膜の処理方法 |
KR100764591B1 (ko) * | 2001-09-28 | 2007-10-08 | 엘지.필립스 엘시디 주식회사 | 필름 전사법에 의한 액정표시장치용 컬러필터 기판 및그의 제조방법 |
US7079210B2 (en) * | 2001-11-22 | 2006-07-18 | Samsung Electronics Co., Ltd. | Liquid crystal display and thin film transistor array panel |
KR100628262B1 (ko) * | 2001-12-13 | 2006-09-27 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시소자 |
JP3974451B2 (ja) | 2002-05-15 | 2007-09-12 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
KR100853778B1 (ko) * | 2002-06-21 | 2008-08-25 | 엘지디스플레이 주식회사 | 멀티도메인 액정표시소자 |
KR100840326B1 (ko) | 2002-06-28 | 2008-06-20 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용되는 박막 트랜지스터 기판 |
KR100880216B1 (ko) * | 2002-06-28 | 2009-01-28 | 엘지디스플레이 주식회사 | 멀티도메인 액정표시소자 |
KR20040008920A (ko) * | 2002-07-19 | 2004-01-31 | 삼성전자주식회사 | 수직 배향형 액정 표시 장치 |
JP4056326B2 (ja) * | 2002-08-30 | 2008-03-05 | シャープ株式会社 | 液晶表示装置 |
US20040075791A1 (en) * | 2002-10-16 | 2004-04-22 | Hong-Da Liu | Wide view angle ultra minimal transflective-type vertically aligned liquid crystal display |
JP4156342B2 (ja) * | 2002-10-31 | 2008-09-24 | シャープ株式会社 | 液晶表示装置 |
TW594234B (en) * | 2002-12-02 | 2004-06-21 | Ind Tech Res Inst | Wide viewing angle LCD device with laterally driven electric field and its manufacturing method |
KR100720450B1 (ko) * | 2002-12-23 | 2007-05-22 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시장치 및 그 제조방법 |
KR100945372B1 (ko) * | 2002-12-31 | 2010-03-08 | 엘지디스플레이 주식회사 | 멀티도메인 액정표시소자 |
JP3900141B2 (ja) * | 2003-03-13 | 2007-04-04 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
KR101023974B1 (ko) * | 2003-05-13 | 2011-03-28 | 삼성전자주식회사 | 액정표시장치 및 이의 제조 방법 |
KR100569718B1 (ko) | 2003-05-20 | 2006-04-10 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
JP3642489B2 (ja) * | 2003-06-11 | 2005-04-27 | シャープ株式会社 | 液晶表示装置 |
JP2005055880A (ja) * | 2003-07-24 | 2005-03-03 | Sharp Corp | 液晶表示装置およびその駆動方法 |
KR100617612B1 (ko) * | 2003-08-26 | 2006-09-01 | 비오이 하이디스 테크놀로지 주식회사 | 에프에프에스 모드 액정표시장치 |
KR100983577B1 (ko) * | 2003-09-05 | 2010-09-27 | 엘지디스플레이 주식회사 | 액정표시소자 |
JP3879727B2 (ja) * | 2003-10-02 | 2007-02-14 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
CN1605916B (zh) | 2003-10-10 | 2010-05-05 | 乐金显示有限公司 | 具有薄膜晶体管阵列基板的液晶显示板及它们的制造方法 |
JP4813050B2 (ja) | 2003-12-03 | 2011-11-09 | 三星電子株式会社 | 表示板及びこれを含む液晶表示装置 |
US7646459B2 (en) * | 2003-12-26 | 2010-01-12 | Sharp Kabushiki Kaisha | Liquid crystal display device |
KR101022560B1 (ko) * | 2003-12-30 | 2011-03-16 | 엘지디스플레이 주식회사 | 광효율 향상 필름 및 이를 이용한 액정표시장치 |
JP2005250361A (ja) * | 2004-03-08 | 2005-09-15 | Sharp Corp | 液晶表示装置 |
TWI317451B (en) * | 2004-03-11 | 2009-11-21 | Au Optronics Corp | Multi-domain vertical alignment liquid crystal display |
JP2005265891A (ja) * | 2004-03-16 | 2005-09-29 | Sharp Corp | 液晶表示装置およびその駆動方法 |
JP4155227B2 (ja) * | 2004-05-07 | 2008-09-24 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
JP4844027B2 (ja) * | 2004-07-16 | 2011-12-21 | カシオ計算機株式会社 | 垂直配向型の液晶表示素子 |
CN100476554C (zh) * | 2004-08-31 | 2009-04-08 | 卡西欧计算机株式会社 | 垂直取向型有源矩阵液晶显示元件 |
JP4372648B2 (ja) | 2004-09-13 | 2009-11-25 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
CN101604087A (zh) * | 2004-09-30 | 2009-12-16 | 卡西欧计算机株式会社 | 垂直取向型有源矩阵液晶显示元件 |
JP2006106101A (ja) * | 2004-09-30 | 2006-04-20 | Sanyo Electric Co Ltd | 液晶表示パネル |
US20060066791A1 (en) * | 2004-09-30 | 2006-03-30 | Casio Computer Co., Ltd. | Vertical alignment active matrix liquid crystal display device |
TWI282002B (en) * | 2004-10-26 | 2007-06-01 | Au Optronics Corp | A multi-domain vertical alignment liquid crystal display device |
KR100719920B1 (ko) * | 2004-11-17 | 2007-05-18 | 비오이 하이디스 테크놀로지 주식회사 | 브이브이에이 모드 액정표시장치 |
JP4639797B2 (ja) * | 2004-12-24 | 2011-02-23 | カシオ計算機株式会社 | 液晶表示素子 |
US8068200B2 (en) * | 2004-12-24 | 2011-11-29 | Casio Computer Co., Ltd. | Vertical alignment liquid crystal display device in which a pixel electrode has slits which divide the pixel electrode into electrode portions |
CN100434987C (zh) * | 2005-01-19 | 2008-11-19 | 友达光电股份有限公司 | 多区域垂直排列液晶显示装置 |
JP4658622B2 (ja) * | 2005-01-19 | 2011-03-23 | シャープ株式会社 | 液晶表示装置用基板及び液晶表示装置 |
KR20060104707A (ko) | 2005-03-31 | 2006-10-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
JP4666398B2 (ja) * | 2005-05-13 | 2011-04-06 | シャープ株式会社 | 液晶表示装置 |
DE102006023993A1 (de) * | 2005-05-23 | 2007-03-08 | Wang, Ran-Hong, Tustin | Polarisationssteuerung für Flüssigkristallanzeigen |
WO2006132369A1 (ja) * | 2005-06-09 | 2006-12-14 | Sharp Kabushiki Kaisha | 液晶表示装置 |
JP4738096B2 (ja) * | 2005-08-18 | 2011-08-03 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置及びその製造方法 |
US7630033B2 (en) * | 2005-09-15 | 2009-12-08 | Hiap L. Ong | Large pixel multi-domain vertical alignment liquid crystal display using fringe fields |
US20070145700A1 (en) * | 2005-10-17 | 2007-06-28 | Richard Ambrose | Method and apparatus for portable container with integrated seat and stabilization mechanism |
KR101264682B1 (ko) * | 2005-12-13 | 2013-05-16 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
TWI357517B (en) * | 2006-01-27 | 2012-02-01 | Au Optronics Corp | Optical compensated bend type lcd |
US20070195251A1 (en) * | 2006-02-22 | 2007-08-23 | Toppoly Optoelectronics Corp. | Systems for displaying images involving alignment liquid crystal displays |
TW200732793A (en) * | 2006-02-23 | 2007-09-01 | Chunghwa Picture Tubes Ltd | Protrusions dispositon of an MVA LCD |
TWI335456B (en) * | 2006-03-24 | 2011-01-01 | Au Optronics Corp | Liquid crystal display |
US20070229744A1 (en) * | 2006-03-29 | 2007-10-04 | Casio Computer Co., Ltd. | Vertically aligned liquid crystal display device |
TWI274212B (en) * | 2006-06-14 | 2007-02-21 | Au Optronics Corp | Liquid crystal display panel and driving method thereof |
CN101517468B (zh) * | 2006-09-22 | 2011-01-19 | 夏普株式会社 | 液晶显示装置 |
JP5217154B2 (ja) * | 2006-11-16 | 2013-06-19 | 凸版印刷株式会社 | カラーフィルタの製造方法及びカラーフィルタ |
KR101319595B1 (ko) * | 2007-03-13 | 2013-10-16 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
US7940359B2 (en) * | 2007-04-25 | 2011-05-10 | Au Optronics Corporation | Liquid crystal display comprising a dielectric layer having a first opening surrounding a patterned structure and exposing a portion of a first pixel electrode and a second pixel electrode formed on the dielectric layer |
US7948596B2 (en) * | 2007-04-25 | 2011-05-24 | Au Optronics Corporation | Multi-domain vertical alignment liquid crystal display |
TWI372279B (en) * | 2007-08-28 | 2012-09-11 | Au Optronics Corp | Liquid crystal display panel and pixel structure |
CN101571654A (zh) * | 2008-04-28 | 2009-11-04 | 上海天马微电子有限公司 | 液晶显示装置 |
KR101460652B1 (ko) * | 2008-05-14 | 2014-11-13 | 삼성디스플레이 주식회사 | 액정표시장치 및 이의 제조 방법 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
TWI381215B (zh) * | 2009-02-26 | 2013-01-01 | Au Optronics Corp | 垂直配向液晶顯示面板 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
TWI390287B (zh) * | 2009-04-21 | 2013-03-21 | Chimei Innolux Corp | 液晶顯示裝置 |
US20120133618A1 (en) * | 2009-07-10 | 2012-05-31 | Naru Usukura | Display device with touch sensor functionality, and light-collecting/blocking film |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
JPWO2011045951A1 (ja) * | 2009-10-16 | 2013-03-04 | シャープ株式会社 | 液晶表示装置 |
KR20120027710A (ko) * | 2010-09-13 | 2012-03-22 | 삼성모바일디스플레이주식회사 | 액정 표시 패널 |
US8466411B2 (en) | 2011-03-03 | 2013-06-18 | Asm Japan K.K. | Calibration method of UV sensor for UV curing |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
EP2734843A2 (en) | 2011-07-18 | 2014-05-28 | President and Fellows of Harvard College | Engineered microbe-targeting molecules and uses thereof |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
JP6003192B2 (ja) * | 2012-04-27 | 2016-10-05 | ソニー株式会社 | 液晶表示装置 |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
KR101944701B1 (ko) * | 2012-09-05 | 2019-02-11 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
CN103744216B (zh) * | 2014-01-02 | 2018-01-05 | 北京京东方光电科技有限公司 | 一种液晶显示面板及其制作方法 |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102633318B1 (ko) | 2017-11-27 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 청정 소형 구역을 포함한 장치 |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
TW202405221A (zh) | 2018-06-27 | 2024-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
TWI751420B (zh) | 2018-06-29 | 2022-01-01 | 荷蘭商Asm知識產權私人控股有限公司 | 薄膜沉積方法 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的***及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
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CN112666759A (zh) * | 2020-12-30 | 2021-04-16 | Tcl华星光电技术有限公司 | 液晶显示面板及曲面显示装置 |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
CN113703231B (zh) * | 2021-08-30 | 2022-12-23 | Tcl华星光电技术有限公司 | 阵列基板及液晶显示面板 |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1462978A (en) | 1974-04-17 | 1977-01-26 | Rank Organisation Ltd | Optical apparatus |
US4385806A (en) * | 1978-06-08 | 1983-05-31 | Fergason James L | Liquid crystal display with improved angle of view and response times |
FR2564605B1 (fr) * | 1984-05-18 | 1987-12-24 | Commissariat Energie Atomique | Cellule a cristal liquide susceptible de presenter une structure homeotrope, a birefringence compensee pour cette structure |
FR2568393B1 (fr) * | 1984-07-26 | 1986-11-14 | Commissariat Energie Atomique | Cellule a cristal liquide nematique faiblement dope par un solute chiral, et du type a birefringence controlee electriquement |
JPS61170778A (ja) * | 1985-01-25 | 1986-08-01 | 日本電気株式会社 | アクテイブマトリツクスカラ−液晶表示パネル |
FR2595156B1 (fr) * | 1986-02-28 | 1988-04-29 | Commissariat Energie Atomique | Cellule a cristal liquide utilisant l'effet de birefringence controlee electriquement et procedes de fabrication de la cellule et d'un milieu uniaxe d'anisotropie optique negative, utilisable dans celle-ci |
US4878742A (en) * | 1986-08-04 | 1989-11-07 | Canon Kabushiki Kaisha | Liquid crystal optical modulator |
JPH01189629A (ja) | 1988-01-26 | 1989-07-28 | Seiko Instr & Electron Ltd | 液晶表示装置およびその製造方法 |
JPH01196020A (ja) | 1988-02-01 | 1989-08-07 | Bio Toron:Kk | プラスチックフィルム基板を有する液晶セル並びに該液晶セルに用いるプラスチックフィルム基板の表面洗浄方法及びその表面処理方法 |
JPH0235416A (ja) | 1988-07-26 | 1990-02-06 | Toshiba Corp | 液晶表示素子 |
JPH02151830A (ja) | 1988-12-05 | 1990-06-11 | Seiko Epson Corp | 液晶電気光学素子 |
JPH02190825A (ja) | 1989-01-20 | 1990-07-26 | Seiko Epson Corp | 液晶電気光学素子 |
JPH0754363B2 (ja) | 1989-07-11 | 1995-06-07 | 凸版印刷株式会社 | カラーフィルタの剥離方法 |
JPH03209220A (ja) | 1990-01-11 | 1991-09-12 | Matsushita Electric Ind Co Ltd | 光学変調素子の製造法 |
JP2507122B2 (ja) | 1990-03-08 | 1996-06-12 | スタンレー電気株式会社 | 液晶表示装置 |
JPH03261914A (ja) | 1990-03-13 | 1991-11-21 | Asahi Glass Co Ltd | 液晶表示素子 |
DE69122908T2 (de) | 1990-06-21 | 1997-02-27 | Matsushita Electric Ind Co Ltd | Anordnung von Lautsprechern im Gehäuse eines Fernsehempfängers |
JPH07104450B2 (ja) * | 1990-10-17 | 1995-11-13 | スタンレー電気株式会社 | 二軸性光学素子とその製造方法 |
JPH0786622B2 (ja) * | 1990-11-02 | 1995-09-20 | スタンレー電気株式会社 | 液晶表示装置 |
JP3047477B2 (ja) | 1991-01-09 | 2000-05-29 | 松下電器産業株式会社 | 液晶表示装置およびそれを用いた投写型表示装置 |
JPH05203933A (ja) | 1992-01-24 | 1993-08-13 | Canon Inc | 強誘電性液晶素子 |
EP0549283B1 (en) * | 1991-12-20 | 1997-07-23 | Fujitsu Limited | Liquid crystal display device with differing alignment domains |
JP3087193B2 (ja) | 1991-12-20 | 2000-09-11 | 富士通株式会社 | 液晶表示装置 |
US5473450A (en) | 1992-04-28 | 1995-12-05 | Sharp Kabushiki Kaisha | Liquid crystal display device with a polymer between liquid crystal regions |
US5309264A (en) * | 1992-04-30 | 1994-05-03 | International Business Machines Corporation | Liquid crystal displays having multi-domain cells |
JP3206133B2 (ja) | 1992-09-07 | 2001-09-04 | 住友化学工業株式会社 | 液晶表示装置 |
JP3108768B2 (ja) | 1992-12-24 | 2000-11-13 | スタンレー電気株式会社 | Tn液晶表示素子 |
JP2921813B2 (ja) | 1993-03-04 | 1999-07-19 | シャープ株式会社 | 液晶表示装置の電極構造 |
JPH06301036A (ja) | 1993-04-12 | 1994-10-28 | Sanyo Electric Co Ltd | 液晶表示装置 |
US5579140A (en) * | 1993-04-22 | 1996-11-26 | Sharp Kabushiki Kaisha | Multiple domain liquid crystal display element and a manufacturing method of the same |
JP2975844B2 (ja) * | 1993-06-24 | 1999-11-10 | 三洋電機株式会社 | 液晶表示装置 |
JP2859093B2 (ja) | 1993-06-28 | 1999-02-17 | 三洋電機株式会社 | 液晶表示装置 |
JPH0720469A (ja) | 1993-06-29 | 1995-01-24 | Tokuo Koma | 液晶表示装置 |
JP3234357B2 (ja) | 1993-07-08 | 2001-12-04 | 三洋電機株式会社 | 液晶表示装置 |
JP3164702B2 (ja) | 1993-07-27 | 2001-05-08 | シャープ株式会社 | 液晶表示装置 |
JP3529434B2 (ja) | 1993-07-27 | 2004-05-24 | 株式会社東芝 | 液晶表示素子 |
TW386169B (en) * | 1993-07-27 | 2000-04-01 | Tokyo Shibaura Electric Co | Liquid crystal display apparatus |
EP0636917B1 (en) | 1993-07-27 | 1998-09-30 | Sharp Kabushiki Kaisha | Liquid crystal display |
JPH0764089A (ja) | 1993-08-31 | 1995-03-10 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP3220827B2 (ja) | 1993-10-07 | 2001-10-22 | コニカ株式会社 | ハロゲン化銀写真感光材料の処理方法 |
JP3071076B2 (ja) | 1993-10-28 | 2000-07-31 | 三洋電機株式会社 | 液晶表示セルの製造方法 |
JPH07147426A (ja) | 1993-11-24 | 1995-06-06 | Nec Corp | 半導体装置 |
JP2972514B2 (ja) | 1993-12-28 | 1999-11-08 | 日本電気株式会社 | 液晶表示装置 |
JPH07199205A (ja) | 1993-12-28 | 1995-08-04 | Toshiba Corp | 液晶表示素子 |
JPH07225389A (ja) | 1994-02-16 | 1995-08-22 | Matsushita Electric Ind Co Ltd | 液晶表示素子とその製造方法 |
JPH07230097A (ja) | 1994-02-18 | 1995-08-29 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP3732242B2 (ja) * | 1994-02-18 | 2006-01-05 | シャープ株式会社 | 液晶表示装置 |
JP2547523B2 (ja) | 1994-04-04 | 1996-10-23 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置及びその製造方法 |
JP3005418B2 (ja) * | 1994-05-18 | 2000-01-31 | 三洋電機株式会社 | 液晶表示装置 |
JPH07318950A (ja) | 1994-05-27 | 1995-12-08 | Sony Corp | 電気光学表示セルのスペーサ形成方法 |
KR100267894B1 (ko) * | 1994-05-31 | 2000-10-16 | 무네유키 가코우 | 광학 보상 시이트 및 액정 디스플레이 |
JP3292591B2 (ja) | 1994-06-03 | 2002-06-17 | 株式会社東芝 | 液晶表示素子 |
JPH086052A (ja) | 1994-06-24 | 1996-01-12 | Dainippon Printing Co Ltd | 液晶光学素子 |
JPH0815714A (ja) | 1994-06-28 | 1996-01-19 | Casio Comput Co Ltd | 液晶表示素子 |
JPH0822023A (ja) | 1994-07-05 | 1996-01-23 | Matsushita Electric Ind Co Ltd | 液晶表示素子とその製造方法 |
JPH0829790A (ja) | 1994-07-18 | 1996-02-02 | Sharp Corp | 液晶表示装置 |
JPH0829812A (ja) | 1994-07-19 | 1996-02-02 | Toshiba Corp | 液晶表示装置 |
JPH0843825A (ja) | 1994-07-27 | 1996-02-16 | Fujitsu Ltd | 液晶表示パネル |
JP3066255B2 (ja) | 1994-08-31 | 2000-07-17 | 三洋電機株式会社 | 液晶表示装置 |
JP3077962B2 (ja) | 1994-09-22 | 2000-08-21 | シャープ株式会社 | 液晶表示素子およびその製造方法 |
JP3081468B2 (ja) | 1994-09-30 | 2000-08-28 | 三洋電機株式会社 | 液晶表示装置 |
JP2951853B2 (ja) | 1994-09-30 | 1999-09-20 | 松下電器産業株式会社 | 液晶表示装置 |
US5673092A (en) * | 1994-10-14 | 1997-09-30 | Sharp Kabushiki Kaisha | Liquid crystal device and method for fabricating the same |
JP3193267B2 (ja) | 1994-10-14 | 2001-07-30 | シャープ株式会社 | 液晶素子およびその製造方法 |
US5986732A (en) * | 1995-01-23 | 1999-11-16 | Asahi Glass Company Ltd. | Color liquid crystal display apparatus |
JPH08220524A (ja) | 1995-02-20 | 1996-08-30 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP3448384B2 (ja) | 1995-02-20 | 2003-09-22 | 三洋電機株式会社 | 液晶表示装置 |
US5831700A (en) * | 1995-05-19 | 1998-11-03 | Kent State University | Polymer stabilized four domain twisted nematic liquid crystal display |
JPH0933882A (ja) | 1995-07-14 | 1997-02-07 | Hitachi Ltd | 液晶表示装置 |
JP3358400B2 (ja) | 1995-08-02 | 2002-12-16 | 東レ株式会社 | カラー液晶表示素子 |
JP3999824B2 (ja) | 1995-08-21 | 2007-10-31 | 東芝電子エンジニアリング株式会社 | 液晶表示素子 |
JPH09120075A (ja) | 1995-08-21 | 1997-05-06 | Toshiba Electron Eng Corp | 液晶表示素子 |
JPH0980447A (ja) * | 1995-09-08 | 1997-03-28 | Toshiba Electron Eng Corp | 液晶表示素子 |
EP0872757A4 (en) * | 1995-09-26 | 1999-11-24 | Chisso Corp | SPREADED HOMEOTROPE, NEMATIC LIQUID CRYSTAL DISPLAY |
JPH09105908A (ja) | 1995-10-09 | 1997-04-22 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
TW454101B (en) * | 1995-10-04 | 2001-09-11 | Hitachi Ltd | In-plane field type liquid crystal display device comprising liquid crystal molecules with more than two different kinds of reorientation directions and its manufacturing method |
JPH09160061A (ja) | 1995-12-08 | 1997-06-20 | Toshiba Corp | 液晶表示素子 |
JPH09304757A (ja) * | 1996-03-11 | 1997-11-28 | Sharp Corp | 液晶表示素子及びその製造方法 |
JP3468986B2 (ja) * | 1996-04-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | アクティブマトリクス回路および表示装置 |
JPH1048634A (ja) | 1996-07-30 | 1998-02-20 | Stanley Electric Co Ltd | 液晶表示セル及びその製造方法 |
JP3949759B2 (ja) * | 1996-10-29 | 2007-07-25 | 東芝電子エンジニアリング株式会社 | カラーフィルタ基板および液晶表示素子 |
US6191836B1 (en) * | 1996-11-07 | 2001-02-20 | Lg Philips Lcd, Co., Ltd. | Method for fabricating a liquid crystal cell |
US6344883B2 (en) | 1996-12-20 | 2002-02-05 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for producing the same |
JP4009344B2 (ja) * | 1997-04-28 | 2007-11-14 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
JP3966614B2 (ja) * | 1997-05-29 | 2007-08-29 | 三星電子株式会社 | 広視野角液晶表示装置 |
US6704083B1 (en) * | 1997-05-30 | 2004-03-09 | Samsung Electronics, Co., Ltd. | Liquid crystal display including polarizing plate having polarizing directions neither parallel nor perpendicular to average alignment direction of molecules |
TWI271590B (en) * | 1997-06-12 | 2007-01-21 | Sharp Kk | Liquid crystal display device |
KR19990001949A (ko) | 1997-06-18 | 1999-01-15 | 윤종용 | 반도체 웨이퍼 고정장치 |
JP3398025B2 (ja) | 1997-10-01 | 2003-04-21 | 三洋電機株式会社 | 液晶表示装置 |
JP3208363B2 (ja) * | 1997-10-01 | 2001-09-10 | 三洋電機株式会社 | 液晶表示装置 |
US5907380A (en) * | 1997-10-30 | 1999-05-25 | International Business Machines Corporation | Liquid crystal cell employing thin wall for pre-tilt control |
KR100309918B1 (ko) * | 1998-05-16 | 2001-12-17 | 윤종용 | 광시야각액정표시장치및그제조방법 |
KR100354904B1 (ko) * | 1998-05-19 | 2002-12-26 | 삼성전자 주식회사 | 광시야각액정표시장치 |
KR100283511B1 (ko) * | 1998-05-20 | 2001-03-02 | 윤종용 | 광시야각 액정 표시장치 |
US6266166B1 (en) * | 1999-03-08 | 2001-07-24 | Dai Nippon Printing Co., Ltd. | Self-adhesive film for hologram formation, dry plate for photographing hologram, and method for image formation using the same |
US6256080B1 (en) * | 1999-06-23 | 2001-07-03 | International Business Machines Corporation | Self-aligned structures for improved wide viewing angle for liquid crystal displays |
KR100354906B1 (ko) * | 1999-10-01 | 2002-09-30 | 삼성전자 주식회사 | 광시야각 액정 표시 장치 |
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JP2008158550A (ja) | 2008-07-10 |
JP4130274B2 (ja) | 2008-08-06 |
JP2012177932A (ja) | 2012-09-13 |
US6954248B2 (en) | 2005-10-11 |
KR19990085360A (ko) | 1999-12-06 |
US6710837B1 (en) | 2004-03-23 |
JP2009075607A (ja) | 2009-04-09 |
US20080079886A1 (en) | 2008-04-03 |
JPH11352489A (ja) | 1999-12-24 |
US7573554B2 (en) | 2009-08-11 |
US20050140887A1 (en) | 2005-06-30 |
TW584779B (en) | 2004-04-21 |
US20040080697A1 (en) | 2004-04-29 |
JP5326074B2 (ja) | 2013-10-30 |
JP5527962B2 (ja) | 2014-06-25 |
JP2012177933A (ja) | 2012-09-13 |
KR100309918B1 (ko) | 2001-12-17 |
JP4336730B2 (ja) | 2009-09-30 |
US7570332B2 (en) | 2009-08-04 |
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EXPY | Cancellation because of completion of term |