JP5172330B2 - 半導体デバイスおよびその製造方法 - Google Patents
半導体デバイスおよびその製造方法 Download PDFInfo
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- JP5172330B2 JP5172330B2 JP2007510745A JP2007510745A JP5172330B2 JP 5172330 B2 JP5172330 B2 JP 5172330B2 JP 2007510745 A JP2007510745 A JP 2007510745A JP 2007510745 A JP2007510745 A JP 2007510745A JP 5172330 B2 JP5172330 B2 JP 5172330B2
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- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000002019 doping agent Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 40
- 230000007246 mechanism Effects 0.000 claims description 21
- 230000003071 parasitic effect Effects 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
更に、前記カソードがオーミック領域と、前記オーミック領域だけの垂直側面のまわりに前記オーミック領域を取り囲む誘電絶縁領域とを含み、前記オーミック領域と誘電絶縁領域とが、前記カソードの頂部部分に配置され、更に、前記オーミック領域が、オーミック接触のために適当なヘビードープ領域を有し、前記アノードが、前記アノードの頂部部分に配置されたオーミック領域を更に含み、前記オーミック領域が、オーミック接触のために適当なヘビードープ領域を有し、前記伝導絶縁機構の側面から前記伝導絶縁機構を取り囲むトレンチ誘電絶縁領域を更に有し、前記トレンチ誘電絶縁領域が、前記基板内に下がるように前記伝導絶縁機構の表面から延びることを特徴とする。
図におけるエレメントは簡略化されており、正確なスケールで図示されていないことは、当業者には理解されるであろう。例えば、図におけるいくつかのエレメントの寸法は、本発明の実施形態の理解の向上を助けるために、他のエレメントに対して誇張されている。
ある実施形態では、電界酸化膜層(field oxide layer)が、誘電層19を形成するのに用いられる。酸化物は、使用されうる可能性のある一例としての誘電材料に過ぎない。他の如何なる適当な誘電材料をも使用することができ得る。
Claims (6)
- 第1の伝導タイプの基板と、
前記第1の伝導タイプのアノードとを有し、
前記アノードが、
前記基板上に横たわるエピタキシャル層からなる低ドーパント濃度の第2の部分と、
前記エピタキシャル層に形成された高ドーパント濃度の第1の部分と、
前記エピタキシャル層に形成された中間のドーパント濃度の第3の部分と、
前記第1の部分に形成され第1の部分よりもドーパント濃度が高いオーミック
接触を作る領域とからなり、
前記エピタキシャル層に形成された前記第1の伝導タイプとは異なる第2の伝導タイプのカソードとを有し、
前記第3の部分はカソードと隣接して配設され、アノード/カソード接合インターフェースを形成し、
前記第2の伝導タイプの伝導絶縁機構とを有し、
前記伝導絶縁機構が、埋設層と、前記埋設層と電気的に結合する伝導垂直部分と含み、
前記埋設層が、前記基板と前記エピタキシャル層との間に配置されるとともに、前記第3の部分と隣接して配置され、
前記伝導垂直部分が、前記アノード及びカソードの領域の側面から前記アノード及びカソードの領域を取り囲み、
前記伝導絶縁機構が、前記基板との接合を形成し、前記伝導絶縁機構が、前記カソード、前記第3の部分、前記埋設層から構成される垂直NPN、および、前記第3の部分、前記埋設層、前記基板から構成される垂直PNP領域によって形成される寄生トランジスタから生じる前記基板内に注入される寄生電流の量を低減させるように電気的にバイアスをかけられ、
前記オーミック接触を作る領域と、前記伝導絶縁機構の伝導垂直部分の頂部との間の前記エピタキシャル層中に配置された誘電絶縁領域と、
を有することを特徴とする半導体デバイス。 - 前記伝導垂直部分が、前記領域の表面から、埋設層まで下がるように延びる、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記伝導垂直部分の幅が、垂直NPN及び垂直PNP領域によって形成される寄生トランジスタから生じる基板内に注入される寄生電流の量を制御することを特徴とする、請求項2に記載の半導体デバイス。
- 伝導垂直部分が、基板の寄生電流を実質的に除去するように選択されたことを特徴とする請求項3に記載の半導体デバイス。
- 前記伝導絶縁機構が、前記アノードと前記カソードの一方に電気的に接続されたことを特徴とする請求項4に記載の半導体デバイス。
- 複数のドーパント濃度が、高ドーパント濃度、低ドーパント濃度、及び、中間のドーパント濃度の別々の部分を含み、
前記高ドーパント濃度が、2×1017乃至5×1017のオーダーであり、前記低ドーパント濃度が、1×1015乃至5×1015のオーダーであり、前記中間のドーパント濃度が、2×1016乃至5×1016のオーダーであることを特徴とする請求項5に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/836,170 US7095092B2 (en) | 2004-04-30 | 2004-04-30 | Semiconductor device and method of forming the same |
US10/836,170 | 2004-04-30 | ||
PCT/US2005/011276 WO2005111817A2 (en) | 2004-04-30 | 2005-04-06 | Semiconductor device and method of forming the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007535812A JP2007535812A (ja) | 2007-12-06 |
JP2007535812A5 JP2007535812A5 (ja) | 2008-05-22 |
JP5172330B2 true JP5172330B2 (ja) | 2013-03-27 |
Family
ID=35187641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007510745A Expired - Fee Related JP5172330B2 (ja) | 2004-04-30 | 2005-04-06 | 半導体デバイスおよびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7095092B2 (ja) |
EP (1) | EP1756949A4 (ja) |
JP (1) | JP5172330B2 (ja) |
CN (1) | CN1947258A (ja) |
TW (1) | TWI364057B (ja) |
WO (1) | WO2005111817A2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US7525779B2 (en) * | 2004-08-30 | 2009-04-28 | Zi-Ping Chen | Diode strings and electrostatic discharge protection circuits |
TWI233688B (en) * | 2004-08-30 | 2005-06-01 | Ind Tech Res Inst | Diode structure with low substrate leakage current and applications thereof |
US7439584B2 (en) * | 2005-05-19 | 2008-10-21 | Freescale Semiconductor, Inc. | Structure and method for RESURF LDMOSFET with a current diverter |
US7466006B2 (en) * | 2005-05-19 | 2008-12-16 | Freescale Semiconductor, Inc. | Structure and method for RESURF diodes with a current diverter |
US7180158B2 (en) * | 2005-06-02 | 2007-02-20 | Freescale Semiconductor, Inc. | Semiconductor device and method of manufacture |
CN101331612B (zh) * | 2005-12-19 | 2012-12-19 | Nxp股份有限公司 | 集成高压二极管及制造方法 |
US20070200136A1 (en) * | 2006-02-28 | 2007-08-30 | Ronghua Zhu | Isolated zener diodes |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
JP4459213B2 (ja) * | 2006-11-07 | 2010-04-28 | 日本テキサス・インスツルメンツ株式会社 | サイリスタの駆動方法 |
US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
JP5534298B2 (ja) * | 2009-06-16 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8198703B2 (en) * | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
TWI405250B (zh) * | 2010-04-13 | 2013-08-11 | Richtek Technology Corp | 半導體元件雜質濃度分布控制方法與相關半導體元件 |
US8278710B2 (en) | 2010-07-23 | 2012-10-02 | Freescale Semiconductor, Inc. | Guard ring integrated LDMOS |
JP5711646B2 (ja) * | 2010-11-16 | 2015-05-07 | 株式会社豊田中央研究所 | ダイオード |
US8629513B2 (en) * | 2011-01-14 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | HV interconnection solution using floating conductors |
JP5898473B2 (ja) * | 2011-11-28 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9231120B2 (en) * | 2012-06-29 | 2016-01-05 | Freescale Semiconductor, Inc. | Schottky diode with leakage current control structures |
US9059008B2 (en) * | 2012-10-19 | 2015-06-16 | Freescale Semiconductor, Inc. | Resurf high voltage diode |
JP6120586B2 (ja) * | 2013-01-25 | 2017-04-26 | ローム株式会社 | nチャネル二重拡散MOS型トランジスタおよび半導体複合素子 |
JP2014203851A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
US9601607B2 (en) * | 2013-11-27 | 2017-03-21 | Qualcomm Incorporated | Dual mode transistor |
US9425266B2 (en) * | 2014-10-13 | 2016-08-23 | Semiconductor Components Industries, Llc | Integrated floating diode structure and method therefor |
CN106653835A (zh) * | 2015-11-04 | 2017-05-10 | 苏州同冠微电子有限公司 | 一种igbt结构及其背面制造方法 |
US9748330B2 (en) | 2016-01-11 | 2017-08-29 | Semiconductor Component Industries, Llc | Semiconductor device having self-isolating bulk substrate and method therefor |
US10026728B1 (en) | 2017-04-26 | 2018-07-17 | Semiconductor Components Industries, Llc | Semiconductor device having biasing structure for self-isolating buried layer and method therefor |
US10224323B2 (en) | 2017-08-04 | 2019-03-05 | Semiconductor Components Industries, Llc | Isolation structure for semiconductor device having self-biasing buried layer and method therefor |
US20200194581A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor device and method for forming the same |
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EP0314399A3 (en) * | 1987-10-30 | 1989-08-30 | Precision Monolithics Inc. | Buried zener diode and method of forming the same |
US5414292A (en) * | 1993-05-26 | 1995-05-09 | Siliconix Incorporated | Junction-isolated floating diode |
EP0700089A1 (en) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit |
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TW417307B (en) * | 1998-09-23 | 2001-01-01 | Koninkl Philips Electronics Nv | Semiconductor device |
JP3275850B2 (ja) * | 1998-10-09 | 2002-04-22 | 日本電気株式会社 | 高耐圧ダイオードとその製造方法 |
JP4065104B2 (ja) * | 2000-12-25 | 2008-03-19 | 三洋電機株式会社 | 半導体集積回路装置およびその製造方法 |
JP2002203956A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP4074074B2 (ja) * | 2001-09-17 | 2008-04-09 | 株式会社東芝 | 半導体装置 |
JP4067346B2 (ja) * | 2002-06-25 | 2008-03-26 | 三洋電機株式会社 | 半導体集積回路装置 |
-
2004
- 2004-04-30 US US10/836,170 patent/US7095092B2/en active Active
-
2005
- 2005-04-06 EP EP05732887A patent/EP1756949A4/en not_active Withdrawn
- 2005-04-06 CN CNA2005800134293A patent/CN1947258A/zh active Pending
- 2005-04-06 JP JP2007510745A patent/JP5172330B2/ja not_active Expired - Fee Related
- 2005-04-06 WO PCT/US2005/011276 patent/WO2005111817A2/en active Application Filing
- 2005-04-28 TW TW094113757A patent/TWI364057B/zh not_active IP Right Cessation
-
2006
- 2006-06-27 US US11/426,815 patent/US7476593B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1756949A4 (en) | 2009-07-08 |
US20050245020A1 (en) | 2005-11-03 |
TW200609995A (en) | 2006-03-16 |
WO2005111817A2 (en) | 2005-11-24 |
US20060244081A1 (en) | 2006-11-02 |
WO2005111817A3 (en) | 2006-04-20 |
CN1947258A (zh) | 2007-04-11 |
EP1756949A2 (en) | 2007-02-28 |
US7095092B2 (en) | 2006-08-22 |
TWI364057B (en) | 2012-05-11 |
JP2007535812A (ja) | 2007-12-06 |
US7476593B2 (en) | 2009-01-13 |
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