CN101331612B - 集成高压二极管及制造方法 - Google Patents
集成高压二极管及制造方法 Download PDFInfo
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- CN101331612B CN101331612B CN2006800476774A CN200680047677A CN101331612B CN 101331612 B CN101331612 B CN 101331612B CN 2006800476774 A CN2006800476774 A CN 2006800476774A CN 200680047677 A CN200680047677 A CN 200680047677A CN 101331612 B CN101331612 B CN 101331612B
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- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000002955 isolation Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 21
- 230000005516 deep trap Effects 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 239000007943 implant Substances 0.000 abstract 4
- 230000005684 electric field Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000007762 Ficus drupacea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001936 parietal effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75153205P | 2005-12-19 | 2005-12-19 | |
US60/751,532 | 2005-12-19 | ||
PCT/IB2006/054780 WO2007072304A2 (en) | 2005-12-19 | 2006-12-12 | Integrated high voltage diode and manufacturing method therefof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101331612A CN101331612A (zh) | 2008-12-24 |
CN101331612B true CN101331612B (zh) | 2012-12-19 |
Family
ID=38008302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800476774A Active CN101331612B (zh) | 2005-12-19 | 2006-12-12 | 集成高压二极管及制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7659584B2 (zh) |
EP (1) | EP1966829A2 (zh) |
JP (1) | JP2009520349A (zh) |
KR (1) | KR101086564B1 (zh) |
CN (1) | CN101331612B (zh) |
TW (1) | TW200742093A (zh) |
WO (1) | WO2007072304A2 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103811560A (zh) * | 2012-11-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | 钳位二极管及其版图结构和其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614421A (en) * | 1994-03-11 | 1997-03-25 | United Microelectronics Corp. | Method of fabricating junction termination extension structure for high-voltage diode devices |
CN1542906A (zh) * | 2003-02-27 | 2004-11-03 | ����ʿ�뵼������˾ | 制造合并型半导体装置的方法 |
US6967380B2 (en) * | 2002-04-19 | 2005-11-22 | International Business Machines Corporation | CMOS device having retrograde n-well and p-well |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2826182A1 (fr) * | 2001-06-15 | 2002-12-20 | St Microelectronics Sa | Circuit integre de type cmos a tenue en tension elevee |
US7095092B2 (en) * | 2004-04-30 | 2006-08-22 | Freescale Semiconductor, Inc. | Semiconductor device and method of forming the same |
CN101180738B (zh) * | 2005-03-31 | 2012-05-02 | Nxp股份有限公司 | 不对称高电压器件和制造方法 |
EP1966828A1 (en) * | 2005-12-19 | 2008-09-10 | Nxp B.V. | Asymmetrical field-effect semiconductor device with sti region |
-
2006
- 2006-12-12 EP EP06842458A patent/EP1966829A2/en not_active Ceased
- 2006-12-12 JP JP2008545225A patent/JP2009520349A/ja not_active Withdrawn
- 2006-12-12 WO PCT/IB2006/054780 patent/WO2007072304A2/en active Application Filing
- 2006-12-12 CN CN2006800476774A patent/CN101331612B/zh active Active
- 2006-12-12 KR KR1020087017530A patent/KR101086564B1/ko not_active IP Right Cessation
- 2006-12-12 US US12/158,108 patent/US7659584B2/en active Active
- 2006-12-15 TW TW095147117A patent/TW200742093A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614421A (en) * | 1994-03-11 | 1997-03-25 | United Microelectronics Corp. | Method of fabricating junction termination extension structure for high-voltage diode devices |
US6967380B2 (en) * | 2002-04-19 | 2005-11-22 | International Business Machines Corporation | CMOS device having retrograde n-well and p-well |
CN1542906A (zh) * | 2003-02-27 | 2004-11-03 | ����ʿ�뵼������˾ | 制造合并型半导体装置的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7659584B2 (en) | 2010-02-09 |
EP1966829A2 (en) | 2008-09-10 |
WO2007072304A3 (en) | 2007-10-18 |
TW200742093A (en) | 2007-11-01 |
US20080265327A1 (en) | 2008-10-30 |
KR20080080389A (ko) | 2008-09-03 |
KR101086564B1 (ko) | 2011-11-23 |
CN101331612A (zh) | 2008-12-24 |
JP2009520349A (ja) | 2009-05-21 |
WO2007072304A2 (en) | 2007-06-28 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161012 Address after: Holland Ian Deho Finn Patentee after: Naizhiya Co., Ltd. Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161230 Address after: Holland high tech Park 60 Eindhoven Patentee after: NXP BV Address before: Holland Ian Deho Finn Patentee before: Naizhiya Co., Ltd. |