JP5134575B2 - マルチ−チャンバーシステムで半導体素子を製造する方法 - Google Patents
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- 235000012431 wafers Nutrition 0.000 claims description 238
- 238000012546 transfer Methods 0.000 claims description 196
- 230000008569 process Effects 0.000 claims description 156
- 238000005530 etching Methods 0.000 claims description 29
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Description
図1に示すように、従来の半導体素子製造用エッチング設備の集中型マルチチャンバーシステムは、中央に6角柱型の中央チャンバー16が設置され、中央チャンバー16の側面にそれぞれ工程が行われる4つの工程チャンバー15が連結される構成である。中央チャンバー16とそれぞれの工程チャンバー15の間には、ぞれぞれウェハの選択的な出入が自由である図示しない多数個のゲートが設置される。そのゲートを通じ中央チャンバー16に設置されたチャンバー内移送装置14がウェハを選択的にそれぞれの工程チャンバー15にローディング及びアンローディングすることが可能である。
従って、必要な工程チャンバーの個数が増加すると、前述のような集中型マルチチャンバーシステムをさらに一つ追加して設置するようになる。
従って、マルチチャンバーシステムの工程チャンバの個数を増やす方法が多角度から考えられた。
これは本実施例が半導体製造ライン内に設置される一例であって、本実施例が製造ライン内に設置される場合、多様な形態の適用が可能であることを示している。
10 集中型マルチチャンバーシステム
11、41 カセット
12、42 カセットステージ
13、43 ロードロックチャンバー
14、44 チャンバー内移送装置
15、45 工程チャンバー
16 中央チャンバー
17 連結ロードロックチャンバー
20 他工程設備
40 直列型マルチチャンバーシステム
46、47、48、49、50、51 ゲート
52 ウェハ移送装置
53 真空吸着移送アーム
54 移送アーム
60 第1カセットステージ
62 第1ウェハ移送装置
70 第2カセットステージ
72 第2ウェハ移送装置
w、W 設備幅
Claims (11)
- 長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーと分離されたカセットステージ上に第1ウェハを提供する段階と、
前記第1ウェハを前記カセットステージからロードロックチャンバーに前記長方形のウェハ移送チャンバーに位置する移送メカニズムによって移送するが、前記ロードロックチャンバーは、前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置され、前記長方形のウェハ移送チャンバーは前記カセットステージと前記ロードロックチャンバーとの間で大気圧環境で前記第1ウェハの移送のための空間を提供し、前記長方形のウェハ移送チャンバーと前記ロードロックチャンバーとの間に形成されたゲートは選択的に開閉され前記第1ウェハの通過を許容する段階と、
前記ロードロックチャンバーに真空圧を提供する段階と、
前記第1ウェハを前記ロードロックチャンバーに配置された移送アームを用いて前記ロードロックチャンバーから前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置され前記ロードロックチャンバーに連結した多数個の工程チャンバーのうち1つの工程チャンバーに直接的に移送するが、前記ロードロックチャンバーは前記移送アームを移動させるための内部移送装置を含み、前記ロードロックチャンバーと前記多数個の工程チャンバーのうち前記1つの工程チャンバーとの間に形成されたゲートは選択的に開閉され前記第1ウェハの通過を許容する段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーに高真空圧を提供する段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーで前記第1ウェハを加工する段階と、
を含み、
前記ロードロックチャンバーは前記長方形のウェハ移送チャンバーから移送された多数個の前記第1ウェハを収容するように構成されたことを特徴とするマルチ−チャンバーシステムで半導体素子を製造する方法。 - 前記長方形のウェハ移送チャンバーを通じて前記移送メカニズムによって第2ウェハを前記カセットステージから前記ロードロックチャンバーに移送させる段階を更に含むが、前記長方形のウェハ移送チャンバーは前記カセットステージと前記ロードロックチャンバーとの間で大気圧環境で前記第2ウェハの移送のための空間を提供し、前記第1及び第2
ウェハは前記長方形のウェハ移送チャンバーを同時に移送されることを特徴とする請求項
1記載のマルチ−チャンバーシステムで半導体素子を製造する方法。 - 前記第1ウェハを加工する段階は、前記第1ウェハをエッチングするか、またはアッシングする段階を含むことを特徴とする請求項1記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
- 長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーと分離されたカセットステージ上に第1及び第2ウェハを提供する段階と、
前記第1ウェハを前記カセットステージからロードロックチャンバーに前記長方形のウェハ移送チャンバーに位置する移送メカニズムによって移送するが、前記ロードロックチャンバーは前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置され、前記長方形のウェハ移送チャンバーは前記カセットステージと前記ロードロックチャンバーとの間で大気圧環境で前記第1ウェハの移送のための空間を提供し、前記長方形のウェハ移送チャンバーと前記ロードロックチャンバーとの間に形成されたゲートは選択的に開閉され前記第1ウェハの通過を許容する段階と、
前記長方形のウェハ移送チャンバーを通じて前記移送メカニズムによって前記第2ウェハを前記カセットステージから前記ロードロックチャンバーに移送するが、前記長方形のウエハー移送チャンバーは前記カセットステージと前記ロードロックチャンバーとの間で大気圧環境で前記第2ウェハの移送のための空間を提供し、前記長方形のウェハ移送チャンバーと前記ロードロックチャンバーとの間に形成されたゲートは選択的に開閉され前記第2ウェハの通過を許容し、前記第1及び第2ウェハは前記長方形のウェハ移送チャンバーを同時に移送される段階と、
前記ロードロックチャンバーに真空圧を提供する段階と、
前記第1ウェハを前記ロードロックチャンバーに配置された移送アームを用いて前記ロードロックチャンバーから前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置され前記ロードロックチャンバーに連結した多数個の工程チャンバーのうち1つの工程チャンバーに直接的に移送するが、前記ロードロックチャンバーは前記移送アームを移動させるための内部移送装置を含み、前記ロードロックチャンバーと前記多数個の工程チャンバーのうち前記1つの工程チャンバーとの間に形成されたゲートは選択的に開閉され前記第1ウェハの通過を許容する段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーに高真空圧を提供する段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーで前記第1ウェハをエッチングする段階と、
を含み、
前記ロードロックチャンバーは前記第1及び第2ウェハを収容するように構成されたことを特徴とするマルチ−チャンバーシステムで半導体素子を製造する方法。 - 長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置されたロードロックチャンバーに連結した多数個の工程チャンバーのうち1つの工程チャンバーで真空圧下で第1ウェハをエッチングする段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーの一辺上に形成された第1ゲートを通じて前記ロードロックチャンバーに配置される移送アームによって前記第1ウェハを前記1つの工程チャンバーから前記ロードロックチャンバーに移送するが、前記ロードロックチャンバーは多数個の前記第1ウェハを収容するように構成され、前記移送アームを移動させるための内部移送装置を含む段階と、
前記第1ウェハを前記ロードロックチャンバーから前記長方形のウェハ移送チャンバーに位置する移送メカニズムによって前記長方形のウェハ移送チャンバーを通過して大気圧環境で移送するが、前記多数個の工程チャンバーは前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置され、前記長方形のウェハ移送チャンバーは前記第1ウェハの移送のための空間を提供する段階と、
を含むことを特徴とするマルチ−チャンバーシステムで半導体素子を製造する方法。 - カセットステージ上に第1ウェハを提供する段階と、
前記カセットステージから分離され隣接した長方形のウェハ移送チャンバーを大気圧環境に維持するが、前記長方形のウェハ移送チャンバーは前記第1ウェハの移送のための空間を提供する段階と、
前記第1ウェハを前記長方形のウェハ移送チャンバーを通じて前記長方形の移送チャンバーに位置する移送メカニズムによって前記カセットステージから前記長方形のウェハ移送チャンバーに隣接したロードロックチャンバーに移送するが、前記ロードロックチャンバーは前記長方形のウェハ移送チャンバーの長辺に沿って配置される段階と、
前記ロードロックチャンバーに低真空圧を提供する段階と、
前記第1ウェハを前記ロードロックチャンバーに設置された移送アームを用いて前記ロードロックチャンバーから前記ロードロックチャンバーに連結した多数個の工程チャンバーのうち1つの工程チャンバーに直接的に移送するが、前記多数個の工程チャンバーは前記長方形のウェハ移送チャンバーと隣接して前記長方形のウェハ移送チャンバーの長辺に沿って配置される段階と、
前記多数個の工程チャンバーのうち前記1つの工程チャンバーで前記第1ウェハをエッチングする段階と、
前記第1ウェハを前記多数個の工程チャンバーのうち前記1つの工程チャンバーから前記ロードロックチャンバーに前記移送アームを使用して移送する段階と、
前記第1ウェハを前記ロードロックチャンバーから前記移送メカニズムによって前記長方形のウェハ移送チャンバーを通じて大気圧環境で移送する段階と、
を含み、
前記ロードロックチャンバーは多数個の前記第1ウェハを収容するように構成されたことを特徴とするマルチ−チャンバーシステムで半導体素子を製造する方法。 - 前記第1ウェハをエッチングする前に、前記多数個の工程チャンバーのうち前記1つの工程チャンバーに高真空圧を提供する段階を更に含むことを特徴とする請求項6記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
- 前記長方形のウェハ移送チャンバーを通じて前記移送メカニズムによって第2ウェハを前記カセットステージから前記ロードロックチャンバーに移送させる段階を更に含むが、前記長方形のウェハ移送チャンバーは、前記カセットステージと前記ロードロックチャンバーとの間で大気圧環境で前記第2ウェハの移送のための空間を提供し、前記第1及び第2ウェハは前記長方形のウェハ移送チャンバーを同時に移送されることを特徴とする請求項6記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
- 前記第1ウェハは、前記長方形のウェハ移送チャンバーから真空吸着された状態で移送されることを特徴とする請求項1、5、及び6のうち何れか一項に記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
- 前記第1及び第2ウェハは、前記長方形のウェハ移送チャンバーから真空吸着された状態で移送されることを特徴とする請求項4記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
- 前記長方形のウェハ移送チャンバーの互いに向かい合う両側の長辺に沿って各長辺ごとに前記ロードロックチャンバー及び前記多数個の工程チャンバーを設置し、1つのロードロックチャンバーの両側に一組の工程チャンバーを配置し、前記1つのロードロックチャンバーと前記一組の工程チャンバーとの間で前記第1ウェハを移送するとき、前記長方形のウェハ移送チャンバーの長さ方向と平行した方向に移送することを特徴とする請求項1、4、5、及び6のうち何れか一項に記載のマルチ−チャンバーシステムで半導体素子を製造する方法。
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- 1998-10-22 TW TW087117504A patent/TW502284B/zh active
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1999
- 1999-01-18 DE DE19901426A patent/DE19901426B4/de not_active Expired - Lifetime
- 1999-01-18 DE DE19964479A patent/DE19964479B4/de not_active Expired - Lifetime
- 1999-01-26 US US09/237,229 patent/US6503365B1/en not_active Expired - Lifetime
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2002
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2005
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2006
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2009
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- 2009-04-17 US US12/425,426 patent/US20090203211A1/en not_active Abandoned
- 2009-07-30 US US12/512,106 patent/US7776226B2/en not_active Expired - Fee Related
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DE19901426A1 (de) | 1999-11-04 |
JP5491579B2 (ja) | 2014-05-14 |
US20050236092A1 (en) | 2005-10-27 |
US6930050B2 (en) | 2005-08-16 |
JP2012186506A (ja) | 2012-09-27 |
JP2009147368A (ja) | 2009-07-02 |
US20090203211A1 (en) | 2009-08-13 |
DE19964479B4 (de) | 2011-03-31 |
JPH11307614A (ja) | 1999-11-05 |
US7776226B2 (en) | 2010-08-17 |
KR100265287B1 (ko) | 2000-10-02 |
TW502284B (en) | 2002-09-11 |
JP2007036284A (ja) | 2007-02-08 |
DE19901426B4 (de) | 2008-04-03 |
KR19990080759A (ko) | 1999-11-15 |
US20030073323A1 (en) | 2003-04-17 |
US20090291558A1 (en) | 2009-11-26 |
US6503365B1 (en) | 2003-01-07 |
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