JP4815905B2 - 半導体装置およびその製造方法 - Google Patents
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Description
以下、本発明の第1実施形態について図を参照して説明する。
上記実施形態では、半導体素子としてトレンチゲート構造を有するFS型のIGBTを例に説明したが、表面裏面に金属膜(電極)を備える半導体素子であれば、適応可能であり、半導体素子としてパワーMOS等の縦型パワー素子を採用しても構わない。また、半導体素子のゲート構造においては、上記実施形態で示されたトレンチゲート構造の他に、例えばプレーナー構造、コンケーブ構造等、Tゲート構造、Iゲート構造等のどの構造であっても構わない。
4…リード端子、5…樹脂、6…ゲートワイヤ、7…はんだ、
10…シリコン基板(N−型ドリフト層)、17…層間絶縁膜、
17a…コンタクトホール、18…第1表面電極、18a…凹部、
25…第2表面電極、26、28、33…メッキ層、31…第1裏面電極、
32…第2裏面電極。
Claims (6)
- 半導体素子が形成された半導体基板(10)と、
前記半導体基板の表面に形成されると共に、一部が開口したコンタクトホール(17a)が複数備えられた層間絶縁膜(17)と、
前記層間絶縁膜と前記コンタクトホールとを覆うように形成された第1表面電極(18)、および前記第1表面電極の表面に形成された第2表面電極(25)と、
前記半導体基板の裏面に形成された第1裏面電極(31)、および前記第1裏面電極の表面に形成され、前記第2表面電極と同じ材質の第2裏面電極(32)と、を有し、
前記第1裏面電極の表面はでこぼこになっていると共に、前記第1表面電極の表面に前記コンタクトホールの形状に応じた凹部(18a)が複数設けられることで、前記第1表面電極の表面積と前記第1裏面電極との表面積が同じにされており、
前記第2表面電極および前記第2裏面電極は、前記第1表面電極および前記第1裏面電極の表面それぞれに同時に形成されてなることを特徴とする半導体装置。 - 前記第2表面電極および前記第2裏面電極は、湿式めっきの方法によりそれぞれ同時に形成されたものであることを特徴とする請求項1に記載の半導体装置。
- 半導体素子が形成された半導体基板(10)と、
前記半導体基板の表面に形成されると共に、前記半導体基板の一部が露出するようにコンタクトホール(17a)が複数備えられた層間絶縁膜(17)と、
前記層間絶縁膜と前記コンタクトホールとを覆うように形成された第1表面電極(18)、および前記第1表面電極の表面に形成された第2表面電極(25)と、
前記半導体基板の裏面に形成された第1裏面電極(31)、および前記第1裏面電極の表面に形成され、前記第2表面電極と同じ材質の第2裏面電極(32)と、を有する半導体装置の製造方法であって、
半導体素子が形成された半導体基板を用意し、この半導体基板の表面に、前記半導体基板の表面のうち一部が露出する前記コンタクトホールを複数備えた前記層間絶縁膜を形成する工程と、
前記層間絶縁膜および前記コンタクトホールを覆うように金属膜(40)を形成する工程と、
前記金属膜をパターニングして第1表面電極(18)を形成する工程と、
前記第1表面電極を熱処理して、この第1表面電極の表面に前記コンタクトホールの形状に応じた凹部(18a)を複数形成する工程と、
前記半導体基板の裏面に第1裏面電極(31)を形成する工程と、
熱処理されて緻密化されている前記第1表面電極と緻密化されていない前記第1裏面電極を同時に湿式エッチングすることにより、前記第1表面電極のでこぼこを激しくせずに、前記凹部によってでこぼこになっている前記第1表面電極と表面積が同じになるように、前記第1裏面電極の表面を溶融させてでこぼこに形成する工程と、
前記第1表面電極の表面に第2表面電極(25)を、前記第1裏面電極の表面に前記第2表面電極と同じ材質の第2裏面電極(32)を、それぞれ同時に形成する工程と、を含んでいることを特徴とする半導体装置の製造方法。 - 前記第2表面電極および前記第2裏面電極を同時に形成する工程では、湿式めっきの方法により前記第2表面電極および前記第2裏面電極を同時形成することを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記第1裏面電極の表面をエッチングする工程では、前記第1表面電極の表面も前記第1裏面電極と同時にエッチングすることを特徴とする請求項3または4に記載の半導体装置の製造方法。
- 前記半導体基板を用意する工程では、FZ法で育成されたFZ結晶を半導体基板として用意することを特徴とする請求項3ないし5のいずれか1つに記載の半導体装置の製造方法。
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JP2008305948A (ja) * | 2007-06-07 | 2008-12-18 | Denso Corp | 半導体装置およびその製造方法 |
JP4600936B2 (ja) | 2007-06-20 | 2010-12-22 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2009164510A (ja) * | 2008-01-10 | 2009-07-23 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
JP5483906B2 (ja) * | 2009-03-04 | 2014-05-07 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5707709B2 (ja) * | 2009-03-23 | 2015-04-30 | 富士電機株式会社 | 半導体装置の製造方法 |
WO2011004469A1 (ja) | 2009-07-08 | 2011-01-13 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2013098228A (ja) * | 2011-10-28 | 2013-05-20 | Denso Corp | 半導体装置およびその製造方法 |
WO2014156791A1 (ja) | 2013-03-29 | 2014-10-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2016067414A1 (ja) * | 2014-10-30 | 2016-05-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
DE112016001606T5 (de) * | 2015-04-06 | 2017-12-21 | Mitsubishi Electric Corporation | Halbleiterelement und Verfahren zu dessen Herstellung |
JP6264334B2 (ja) * | 2015-07-21 | 2018-01-24 | トヨタ自動車株式会社 | 半導体装置 |
JP6524003B2 (ja) | 2016-03-17 | 2019-06-05 | 東芝メモリ株式会社 | 半導体装置 |
JP6579989B2 (ja) * | 2016-04-05 | 2019-09-25 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017204570A (ja) * | 2016-05-11 | 2017-11-16 | 株式会社デンソー | 半導体装置 |
JP2019038136A (ja) * | 2017-08-23 | 2019-03-14 | 住友金属鉱山株式会社 | 両面金属積層板及びその製造方法 |
WO2019103028A1 (ja) | 2017-11-22 | 2019-05-31 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7229330B2 (ja) * | 2018-01-19 | 2023-02-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US11195803B2 (en) | 2018-03-08 | 2021-12-07 | Mitsubishi Electric Corporation | Semiconductor element, semiconductor device, power conversion device, and method of manufacturing semiconductor element |
DE112019007188T5 (de) * | 2019-04-11 | 2022-03-31 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandlereinheit |
JP2021007182A (ja) * | 2020-10-19 | 2021-01-21 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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JPS5627926A (en) * | 1979-08-16 | 1981-03-18 | Mitsubishi Electric Corp | Electrode formation of semiconductor device |
JPS61234041A (ja) * | 1985-04-09 | 1986-10-18 | Tdk Corp | 半導体装置及びその製造方法 |
JP3208319B2 (ja) * | 1996-03-14 | 2001-09-10 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2003086787A (ja) * | 2001-09-13 | 2003-03-20 | Hitachi Ltd | 半導体装置とその製造方法 |
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