JP4791113B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4791113B2 JP4791113B2 JP2005263468A JP2005263468A JP4791113B2 JP 4791113 B2 JP4791113 B2 JP 4791113B2 JP 2005263468 A JP2005263468 A JP 2005263468A JP 2005263468 A JP2005263468 A JP 2005263468A JP 4791113 B2 JP4791113 B2 JP 4791113B2
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- diffusion layer
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- oxide film
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 180
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 240
- 230000015556 catabolic process Effects 0.000 description 35
- 239000000758 substrate Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2 P型の拡散層
3 P型の拡散層
4 P型の拡散層
5 P型の単結晶シリコン基板
7 N型のエピタキシャル層
27 LOCOS酸化膜
28 LOCOS酸化膜
29 コンタクトホール
30 金属層
32 金属層
Claims (6)
- 半導体層と、前記半導体層に形成されているバックゲート領域、ドレイン領域及びソース領域と、前記半導体層上面に形成されているゲート酸化膜と、前記ゲート酸化膜上に形成されているゲート電極と、前記半導体層上面に形成されている絶縁層とを有する半導体装置において、
前記半導体層には、少なくとも前記ソース領域の両側に前記ドレイン領域が配置され、前記ソース領域と前記ドレイン領域間の電流経路となり、直線形状である活性領域と、電流経路とならず、曲線形状である非活性領域とが形成され、前記非活性領域の前記半導体層にはフローティング状態の第1の拡散層が形成され、
前記活性領域及び前記非活性領域にはフローティング状態の第2の拡散層が形成され、
前記非活性領域では、前記第1の拡散層と前記第2の拡散層とがその形成領域を重畳させている領域が、少なくとも、前記絶縁層上面に形成されている金属層と容量結合することを特徴とする半導体装置。 - 前記第2の拡散層は、前記第1の拡散層よりも不純物濃度が低く、且つ、前記第2の拡散層は、前記第1の拡散層よりも外周側へ延在していることを特徴とする請求項1に記載の半導体装置。
- 前記第1の拡散層及び前記第2の拡散層は前記曲線形状に合わせて配置されていることを特徴とする請求項1、請求項2のいずれかに記載の半導体装置。
- 前記非活性領域の半導体層にはフィールド酸化膜が形成され、前記フィールド酸化膜上に配置されたコンタクトホール近傍にはフローティング状態の第3の拡散層が形成され、
前記非活性領域では、前記第2の拡散層と前記第3の拡散層とがその形成領域を重畳させている領域が、少なくとも、前記絶縁層上面に形成されている金属層と容量結合することを特徴とする請求項1に記載の半導体装置。 - 前記第2の拡散層は、前記第3の拡散層よりも不純物濃度が低く、且つ、前記第2の拡散層は、前記第3の拡散層よりも外周側へ延在していることを特徴とする請求項4に記載の半導体装置。
- 前記第3の拡散層は、前記第1の拡散層よりも拡散深さが深いことを特徴とする請求項4に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005263468A JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
US11/516,733 US7652307B2 (en) | 2005-09-12 | 2006-09-07 | Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage |
TW095133192A TW200713580A (en) | 2005-09-12 | 2006-09-08 | Semiconductor devices |
KR1020060087349A KR100749230B1 (ko) | 2005-09-12 | 2006-09-11 | 반도체 장치 |
CNB2006101272193A CN100454580C (zh) | 2005-09-12 | 2006-09-12 | 半导体装置 |
EP06019023A EP1763083B1 (en) | 2005-09-12 | 2006-09-12 | Semiconductor device |
DE602006012106T DE602006012106D1 (de) | 2005-09-12 | 2006-09-12 | Halbleiteranordnung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005263468A JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007080919A JP2007080919A (ja) | 2007-03-29 |
JP4791113B2 true JP4791113B2 (ja) | 2011-10-12 |
Family
ID=37568596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005263468A Expired - Fee Related JP4791113B2 (ja) | 2005-09-12 | 2005-09-12 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7652307B2 (ja) |
EP (1) | EP1763083B1 (ja) |
JP (1) | JP4791113B2 (ja) |
KR (1) | KR100749230B1 (ja) |
CN (1) | CN100454580C (ja) |
DE (1) | DE602006012106D1 (ja) |
TW (1) | TW200713580A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4956351B2 (ja) | 2007-09-28 | 2012-06-20 | オンセミコンダクター・トレーディング・リミテッド | Dmosトランジスタの製造方法 |
KR101418396B1 (ko) * | 2007-11-19 | 2014-07-10 | 페어차일드코리아반도체 주식회사 | 전력 반도체 소자 |
JP5329118B2 (ja) * | 2008-04-21 | 2013-10-30 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Dmosトランジスタ |
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
KR101800371B1 (ko) | 2011-05-27 | 2017-11-23 | 삼성전자주식회사 | 반도체 장치 |
CN102637743B (zh) * | 2012-05-02 | 2015-04-29 | 杭州士兰微电子股份有限公司 | 一种功率器件及其制造方法 |
US9536944B2 (en) * | 2012-12-04 | 2017-01-03 | Denso Corporation | Semiconductor device and method of manufacturing same |
JP2016092032A (ja) * | 2014-10-29 | 2016-05-23 | サンケン電気株式会社 | 半導体装置 |
US20210128629A1 (en) * | 2016-12-28 | 2021-05-06 | Two Cells Co., Ltd. | Repair agent for living tissue damage and method for producing said repair agent |
US11049967B2 (en) * | 2018-11-02 | 2021-06-29 | Texas Instruments Incorporated | DMOS transistor having thick gate oxide and STI and method of fabricating |
KR102291317B1 (ko) * | 2019-07-24 | 2021-08-18 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
KR102233049B1 (ko) | 2019-07-24 | 2021-03-26 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
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US5708287A (en) * | 1995-11-29 | 1998-01-13 | Kabushiki Kaisha Toshiba | Power semiconductor device having an active layer |
JPH1050985A (ja) * | 1996-07-31 | 1998-02-20 | Denso Corp | Mis構造を有する半導体装置 |
JP3473460B2 (ja) * | 1998-11-20 | 2003-12-02 | 富士電機株式会社 | 横型半導体装置 |
KR100332625B1 (ko) * | 1999-11-10 | 2002-04-17 | 곽정소 | 에피층을 이용한 반도체 집적회로의 저항구조 |
KR100535062B1 (ko) * | 2001-06-04 | 2005-12-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 고내압 반도체장치 |
JP2003101017A (ja) * | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2003303961A (ja) | 2002-04-09 | 2003-10-24 | Sanyo Electric Co Ltd | Mos半導体装置 |
JP2005085975A (ja) * | 2003-09-09 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2005093696A (ja) | 2003-09-17 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 横型mosトランジスタ |
US20050145922A1 (en) * | 2003-12-30 | 2005-07-07 | Joseph Farley | EEPROM and flash EEPROM |
JP4839578B2 (ja) * | 2004-04-26 | 2011-12-21 | 富士電機株式会社 | 横形半導体装置 |
-
2005
- 2005-09-12 JP JP2005263468A patent/JP4791113B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-07 US US11/516,733 patent/US7652307B2/en active Active
- 2006-09-08 TW TW095133192A patent/TW200713580A/zh not_active IP Right Cessation
- 2006-09-11 KR KR1020060087349A patent/KR100749230B1/ko not_active IP Right Cessation
- 2006-09-12 CN CNB2006101272193A patent/CN100454580C/zh not_active Expired - Fee Related
- 2006-09-12 EP EP06019023A patent/EP1763083B1/en not_active Expired - Fee Related
- 2006-09-12 DE DE602006012106T patent/DE602006012106D1/de active Active
Also Published As
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TW200713580A (en) | 2007-04-01 |
EP1763083A3 (en) | 2008-05-28 |
US7652307B2 (en) | 2010-01-26 |
US20070057321A1 (en) | 2007-03-15 |
EP1763083B1 (en) | 2010-02-03 |
EP1763083A2 (en) | 2007-03-14 |
TWI315912B (ja) | 2009-10-11 |
CN1933179A (zh) | 2007-03-21 |
DE602006012106D1 (de) | 2010-03-25 |
JP2007080919A (ja) | 2007-03-29 |
CN100454580C (zh) | 2009-01-21 |
KR100749230B1 (ko) | 2007-08-13 |
KR20070030142A (ko) | 2007-03-15 |
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