JP4744101B2 - 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 - Google Patents
多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 Download PDFInfo
- Publication number
- JP4744101B2 JP4744101B2 JP2004179789A JP2004179789A JP4744101B2 JP 4744101 B2 JP4744101 B2 JP 4744101B2 JP 2004179789 A JP2004179789 A JP 2004179789A JP 2004179789 A JP2004179789 A JP 2004179789A JP 4744101 B2 JP4744101 B2 JP 4744101B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- region
- forming
- field plate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 13
- 210000000746 body region Anatomy 0.000 claims description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 118
- 239000004065 semiconductor Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical compound OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Description
基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層をエッチングして、第一及び第二の側壁部があるメサを規定する一対の離間した溝部を形成し、
各溝部を部分的に充填するとともに第一及び第二の側壁部をカバーする誘電体層を各溝部に形成し、
溝部の残りの部分を導電材料で充填して、基板及びエピタキシャル層から絶縁された第一及び第二のフィールドプレート部材を形成する、
ことを具備することを特徴とする。
基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
エピタキシャル層内に第一の導電型でエピタキシャル層の上面に配置されたソース領域、および第一の導電型とは異なる第二の導電型のボディ領域を形成し、
エピタキシャル層に第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、
第一及び第二の側壁部をカバーする誘電体層を各溝部に形成し、
メサから絶縁された導電材料からなるフィールドプレート部材を溝部に形成し、そして、
メサ内で絶縁ゲート部材の近傍でボディ領域を通るチャネルが規定されるように、各フィールドプレート部材とメサとの間に絶縁ゲート部材を形成する、
ことを具備することを特徴とする。
第一の方向とされた複数の平行に配列されたドリフト領域を形成することを含み、当該ドリフト領域のそれぞれは、絶縁層と導電層が交互に配置された第一の導電型にドーピングされた半導体層を含み、当該導電層は前記ドーピングされた半導体層から前記絶縁層によって絶縁されており、前記導電層は高電圧トランジスタのフィールドプレート部材を含んでおり、
第一の導電型であるソース領域、第一の導電型とは異なる第二の導電型で、ソース領域をドリフト領域から分離するボディ領域を形成することを含み、そして、
ボディ領域内のソース領域とドリフト領域の間にチャネルを規定する絶縁ゲートをボディ領域近傍に形成する、
ことを含むことを特徴とする。
ソース領域に接続されたソース電極を形成する、
ことを含むことができる。
Claims (30)
- 基板上に第一の導電型でエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するよう前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーする第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域を形成すると共に、第一の導電型と反対の第二の導電型のボディ領域を形成し、前記ボディ領域は、ソース領域を前記メサの下部から分離し、メサの前記下部は、ドリフト領域を備えており、
前記フィールドプレート部材の各々と前記メサとの間の誘電体層内に埋め込まれ且つ前記メサとの間でゲート絶縁層が設けられるゲート部材であって、前記上面からドリフト領域の上部の深さまで垂直に延びているゲート部材を形成し、
ソース領域、ゲート部材、フィールドプレート部材とそれぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成する
ことを具備し、
チャネル領域が、前記ゲート部材に横方向に隣接して前記ボディ領域の一部内に定められている、縦型高電圧トランジスタを作製する方法。 - 第一の導電型はn型である、請求項1に記載の方法。
- 前記ドリフト領域を、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項1に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項1に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるように形成する、請求項1に記載の方法。
- 前記誘電体層は二酸化ケイ素からなる、請求項1に記載の方法。
- 前記誘電体層のそれぞれは、横方向の幅がメサの横方向の幅よりも大きい、請求項1に記載の方法。
- 基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層に、第一の導電型で前記エピタキシャル層の上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、
エピタキシャル層に、第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、前記ボディ領域は、ソース領域を前記メサの下部から分離し、メサの前記下部は、ドリフト領域を備えており、
前記第一及び第二の側壁部それぞれの上に、メサの横方向の幅よりも大きな横方向の幅を有する誘電体層を形成し、
前記溝部に、誘電体層によってメサから絶縁された導電性材料からなる複数のフィールドプレート部材を形成し、
フィールドプレート部材の各々と前記メサとの間の誘電体層に埋め込まれ且つ前記メサとの間でゲート絶縁層が設けられる複数のゲート部材であり、各ゲート部材が前記上面からボディ領域の下のメサの下部の深さまで垂直に延びているゲート部材を形成し、チャネル領域が、前記ボディ領域を横切って前記ゲート部材の横方向近傍に規定されており、前記チャネル領域がソース領域からドリフト領域の頂部の深さまで延びており、
ソース領域、ゲート部材、フィールドプレート部材とそれぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成する、
ことを具備する高電圧縦型トランジスタを作製する方法。 - 第一の導電型はn型である、請求項8に記載の方法。
- 前記ドリフト領域を、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項8に記載の方法。
- 前記ドリフト領域のドーピング濃度を、基板近くに比べて上面近くの方が低くなるよう形成する、請求項8に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項8に記載の方法。
- フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるように、誘電体層及びフィールドプレート部材を形成する、請求項8に記載の方法。
- メサの横方向の幅を、溝部の深さの20%よりも小さくする、請求項8に記載の方法。
- 前記誘電体層は二酸化ケイ素からなる、請求項8に記載の方法。
- 基板上に第一の導電型のエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するように前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーするとともに、それぞれがメサの横方向の幅よりも大きな横方向の幅を有する第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、前記ボディ領域は前記メサの下部から前記ソース領域を分離しており、前記下部がドリフト領域から成り、
そして
前記第一と第二の誘電体層内に埋め込まれていて且つ前記メサとの間でゲート絶縁層が設けられる前記ボディ領域の横方向近傍に位置するゲート部材であって、前記上面から前記ボディ領域の下の深さまで垂直に延びるゲート部材を形成し、
ソース領域、ゲート部材、フィールドプレート部材それぞれと接続するソース電極、ゲート電極、フィールドプレート電極を形成する
ことを具備する、縦型高電圧トランジスタを作製する方法。 - 第一の導電型はn型である、請求項16に記載の方法。
- 前記ドリフト領域を、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項16に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項16に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてメサの上面近くの方が狭くなるように形成する、請求項16に記載の方法。
- 基板上に、第一の導電型のエピタキシャル層を形成し、
幅、高さ、第一及び第二の側壁部、及び上面を有し、メサを規定するために前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーする第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域を形成すると共に、第一の導電型と反対の第二の導電型のボディ領域を形成し、前記ボディ領域は前記メサの下部からソース領域を分離し、前記下部はドリフト領域から成り、
前記ボディ領域の横方向近傍に、それぞれ第一及び第二誘電体層内に埋め込まれ且つ前記メサとの間でゲート絶縁層が設けられる第一及び第二のゲート部材であって、第一のゲート部材は第一のフィールドプレート部材と前記メサとの間に、第二のゲート部材は第二のフィールドプレート部材と前記メサとの間に設置され、各ゲート部材が上面からボディ領域の下の深さまで垂直に延びている、第一及び第二のゲート部材を形成する、
ことを具備する縦型高電圧トランジスタを作製する方法。 - 前記ドリフト領域を、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項21に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてメサの上面近くの方が狭くなるように形成する、請求項21に記載の方法。
- 基板上に第一の導電型のエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するよう、前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーする第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によって前記メサの第一及び第二の側壁部からそれぞれ絶縁されている導電性材料の第一及び第二のフィールドプレート部材であって、メサの第一及び第二の側壁部に対してそれぞれ平行に形成され、各々が第一及び第二の側壁部からメサの横方向の幅よりも大きな横方向の間隔だけ分離した第一及び第二のフィールドプレート部材を形成し、
ソース領域とボディ領域をメサに形成し、前記ソース領域が第一の導電型を有し、且つ前記メサの上面に設置されており、前記ボディ領域が、前記第一の導電型とは反対の第二の導電型を有し、前記ボディ領域が、前記ソース領域を前記メサの下部から分離し、前記下部が拡張ドレイン領域から成り、そして
前記ボディ領域の横方向近傍に第一及び第二の誘電体層内に埋め込まれ且つ前記メサとの間でゲート絶縁層が設けられるゲート部材を形成し、前記ゲート部材が頂部からボディ領域下の深さまで垂直に延びており、
ソース領域と接続するソース電極及び基板と接続するドレイン電極を形成する
ことを含む縦型高電圧トランジスタを作製する方法。 - 前記ドリフト領域を、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項24に記載の方法。
- 基板上に、第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層に、第一の導電型で前記エピタキシャル層の上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、
エピタキシャル層に、第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、前記メサが、前記溝の深さの20%よりも狭い横方向幅を有し、前記ボディ領域の下の前記メサの下部がドリフト領域から成り、
前記第一及び第二の側壁部それぞれを覆って誘電体層を形成し、前記誘電体層が前記メサの横方向幅よりも大きい横方向幅を有しており、
前記溝部に、誘電体層によってメサから絶縁された導電性材料からなるフィールドプレート部材を形成し、
メサ内をボディ領域から横切ってゲート部材の横方向近傍にチャネル領域が規定されるように、フィールドプレート部材とメサとの間の誘電体層内に埋め込まれ且つ前記メサとの間でゲート絶縁層が設けられるゲート部材を形成し、前記ゲート部材が、前記上面の近くから前記ドリフト領域の上部の深さまで垂直に延びていることを含む縦型高電圧トランジスタを作製する方法。 - さらに、ソース領域、ゲート部材、フィールドプレート部材とそれぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成することを含む、請求項26に記載の方法。
- 前記ドリフト領域を、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項26に記載の方法。
- 前記ドリフト領域のドーピング濃度を、基板近くに比べて上面近くの方が低くなるよう形成する、請求項26に記載の方法。
- 前記誘電体層及びフィールドプレート部材を、フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるよう形成する、請求項26に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/948,879 US6635544B2 (en) | 2001-09-07 | 2001-09-07 | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US09/948879 | 2001-09-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002258264A Division JP4284428B2 (ja) | 2001-09-07 | 2002-07-31 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011067774A Division JP5419913B2 (ja) | 2001-09-07 | 2011-03-25 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004312037A JP2004312037A (ja) | 2004-11-04 |
JP4744101B2 true JP4744101B2 (ja) | 2011-08-10 |
Family
ID=25488349
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002258264A Expired - Fee Related JP4284428B2 (ja) | 2001-09-07 | 2002-07-31 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
JP2004179789A Expired - Fee Related JP4744101B2 (ja) | 2001-09-07 | 2004-06-17 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
JP2011067774A Expired - Fee Related JP5419913B2 (ja) | 2001-09-07 | 2011-03-25 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002258264A Expired - Fee Related JP4284428B2 (ja) | 2001-09-07 | 2002-07-31 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011067774A Expired - Fee Related JP5419913B2 (ja) | 2001-09-07 | 2011-03-25 | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 |
Country Status (3)
Country | Link |
---|---|
US (8) | US6635544B2 (ja) |
EP (5) | EP2264747A3 (ja) |
JP (3) | JP4284428B2 (ja) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6555873B2 (en) | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US7786533B2 (en) | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
DE10161125C1 (de) * | 2001-12-12 | 2003-07-31 | Infineon Technologies Ag | Halbleiterbauelement mit optimierter Stromdichte |
DE10313712B4 (de) * | 2003-03-27 | 2008-04-03 | Infineon Technologies Ag | Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen |
US6865093B2 (en) | 2003-05-27 | 2005-03-08 | Power Integrations, Inc. | Electronic circuit control element with tap element |
US20050208769A1 (en) * | 2004-03-19 | 2005-09-22 | Manish Sharma | Semiconductor structure |
US7400014B2 (en) | 2004-04-20 | 2008-07-15 | International Rectifier Corporation | ACCUFET with schottky source contact |
US7482654B2 (en) * | 2004-04-20 | 2009-01-27 | International Rectifier Corporation | MOSgated power semiconductor device with source field electrode |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
DE102004063946B4 (de) | 2004-05-19 | 2018-03-22 | Infineon Technologies Ag | Transistoranordnungen mit einer in einem Trennungstrench angeordneten Elektrode |
US7268395B2 (en) | 2004-06-04 | 2007-09-11 | International Rectifier Corporation | Deep trench super switch device |
DE112005001434B4 (de) | 2004-06-25 | 2018-06-07 | International Rectifier Corporation | MOS-gatterverknüpftes Leistungshalbleiter-Bauelement mit Source-Feldelektrode |
US7002398B2 (en) | 2004-07-08 | 2006-02-21 | Power Integrations, Inc. | Method and apparatus for controlling a circuit with a high voltage sense device |
US7087959B2 (en) * | 2004-08-18 | 2006-08-08 | Agere Systems Inc. | Metal-oxide-semiconductor device having an enhanced shielding structure |
US7135748B2 (en) * | 2004-10-26 | 2006-11-14 | Power Integrations, Inc. | Integrated circuit with multi-length output transistor segment |
JP4984398B2 (ja) * | 2005-02-04 | 2012-07-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102005014743B4 (de) * | 2005-03-31 | 2013-12-05 | Infineon Technologies Austria Ag | MOS-Feldplattentrench-Transistoreinrichtung |
GB0508407D0 (en) * | 2005-04-26 | 2005-06-01 | Ami Semiconductor Belgium Bvba | Alignment of trench for MOS |
US20060255401A1 (en) * | 2005-05-11 | 2006-11-16 | Yang Robert K | Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures |
US20070012983A1 (en) * | 2005-07-15 | 2007-01-18 | Yang Robert K | Terminations for semiconductor devices with floating vertical series capacitive structures |
DE102005052734B4 (de) * | 2005-10-06 | 2012-02-23 | Infineon Technologies Ag | Halbleiterstruktur, Verfahren zum Betreiben einer Halbleiterstruktur und Verfahren zum Herstellen einer Halbleiterstruktur |
JP5070751B2 (ja) * | 2006-01-31 | 2012-11-14 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US7554153B2 (en) * | 2006-03-07 | 2009-06-30 | International Rectifier Corporation | Power semiconductor device |
US7381618B2 (en) * | 2006-10-03 | 2008-06-03 | Power Integrations, Inc. | Gate etch process for a high-voltage FET |
US8093621B2 (en) | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
JP4601603B2 (ja) * | 2006-12-27 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | パワーmisfet、半導体装置およびdc/dcコンバータ |
JP5298432B2 (ja) * | 2007-01-31 | 2013-09-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US7859037B2 (en) | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
US8653583B2 (en) | 2007-02-16 | 2014-02-18 | Power Integrations, Inc. | Sensing FET integrated with a high-voltage transistor |
US7557406B2 (en) * | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
US7595523B2 (en) * | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
US8159024B2 (en) * | 2007-04-20 | 2012-04-17 | Rensselaer Polytechnic Institute | High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance |
US7875962B2 (en) * | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
US8129815B2 (en) | 2009-08-20 | 2012-03-06 | Power Integrations, Inc | High-voltage transistor device with integrated resistor |
US7816759B2 (en) * | 2008-01-09 | 2010-10-19 | Infineon Technologies Ag | Integrated circuit including isolation regions substantially through substrate |
US7772651B2 (en) * | 2008-01-11 | 2010-08-10 | International Business Machines Corporation | Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits |
US7786535B2 (en) * | 2008-01-11 | 2010-08-31 | International Business Machines Corporation | Design structures for high-voltage integrated circuits |
US7790543B2 (en) * | 2008-01-11 | 2010-09-07 | International Business Machines Corporation | Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures |
US7790524B2 (en) * | 2008-01-11 | 2010-09-07 | International Business Machines Corporation | Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures |
WO2009110229A1 (ja) * | 2008-03-07 | 2009-09-11 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US7804124B2 (en) * | 2008-05-09 | 2010-09-28 | International Business Machines Corporation | Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory |
US7700428B2 (en) * | 2008-05-09 | 2010-04-20 | International Business Machines Corporation | Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory |
US7671408B2 (en) * | 2008-07-09 | 2010-03-02 | Texas Instruments Incorporated | Vertical drain extended MOSFET transistor with vertical trench field plate |
TWI385802B (zh) * | 2008-09-08 | 2013-02-11 | Niko Semiconductor Co Ltd | 高壓金氧半導體元件及其製作方法 |
US7964912B2 (en) | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US8044459B2 (en) | 2008-11-10 | 2011-10-25 | Infineon Technologies Austria Ag | Semiconductor device with trench field plate including first and second semiconductor materials |
US7871882B2 (en) * | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US8169022B2 (en) * | 2009-06-19 | 2012-05-01 | Ss Sc Ip, Llc | Vertical junction field effect transistors and diodes having graded doped regions and methods of making |
US8115457B2 (en) | 2009-07-31 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus for implementing a power converter input terminal voltage discharge circuit |
US8207455B2 (en) * | 2009-07-31 | 2012-06-26 | Power Integrations, Inc. | Power semiconductor package with bottom surface protrusions |
US8207577B2 (en) * | 2009-09-29 | 2012-06-26 | Power Integrations, Inc. | High-voltage transistor structure with reduced gate capacitance |
US7893754B1 (en) | 2009-10-02 | 2011-02-22 | Power Integrations, Inc. | Temperature independent reference circuit |
US8634218B2 (en) * | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
JP5452195B2 (ja) * | 2009-12-03 | 2014-03-26 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
US8310845B2 (en) * | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
US8305826B2 (en) | 2010-05-07 | 2012-11-06 | Power Integrations, Inc. | Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit |
US8164125B2 (en) | 2010-05-07 | 2012-04-24 | Power Integrations, Inc. | Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit |
US7932738B1 (en) | 2010-05-07 | 2011-04-26 | Power Integrations, Inc. | Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit |
CN102254796B (zh) * | 2010-05-20 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | 形成交替排列的p型和n型半导体薄层的方法 |
US8497203B2 (en) | 2010-08-13 | 2013-07-30 | International Business Machines Corporation | Semiconductor structures and methods of manufacture |
US7977742B1 (en) | 2010-08-20 | 2011-07-12 | Monolithic Power Systems, Inc. | Trench-gate MOSFET with capacitively depleted drift region |
US8313995B2 (en) * | 2011-01-13 | 2012-11-20 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor device |
CN102184944B (zh) * | 2011-04-29 | 2013-01-02 | 南京邮电大学 | 一种横向功率器件的结终端结构 |
US8643135B2 (en) * | 2011-05-31 | 2014-02-04 | Alpha And Omega Semiconductor Incorporated | Edge termination configurations for high voltage semiconductor power devices |
US8803225B2 (en) * | 2012-01-12 | 2014-08-12 | Tsinghua University | Tunneling field effect transistor having a lightly doped buried layer |
US8723178B2 (en) | 2012-01-20 | 2014-05-13 | Monolithic Power Systems, Inc. | Integrated field effect transistors with high voltage drain sensing |
JP5461599B2 (ja) * | 2012-02-15 | 2014-04-02 | 三菱電機株式会社 | 電力用半導体装置 |
US8941188B2 (en) * | 2012-03-26 | 2015-01-27 | Infineon Technologies Austria Ag | Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body |
US8653600B2 (en) | 2012-06-01 | 2014-02-18 | Power Integrations, Inc. | High-voltage monolithic schottky device structure |
JP5609950B2 (ja) * | 2012-11-12 | 2014-10-22 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US9455621B2 (en) | 2013-08-28 | 2016-09-27 | Power Integrations, Inc. | Controller IC with zero-crossing detector and capacitor discharge switching element |
US9111766B2 (en) * | 2013-09-24 | 2015-08-18 | Infineon Technologies Austria Ag | Transistor device with a field electrode |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
KR101832864B1 (ko) | 2013-11-06 | 2018-02-27 | 와트 퓨얼 셀 코퍼레이션 | 기체 반응 매질 플로우 관리용 매니폴드를 가지는 화학 반응기 |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
CN106463508A (zh) | 2014-04-01 | 2017-02-22 | 英派尔科技开发有限公司 | 具有闪络保护的垂直晶体管 |
US9537001B2 (en) | 2014-07-30 | 2017-01-03 | Fairchild Semiconductor Corporation | Reduction of degradation due to hot carrier injection |
US9406750B2 (en) | 2014-11-19 | 2016-08-02 | Empire Technology Development Llc | Output capacitance reduction in power transistors |
JP2016171268A (ja) | 2015-03-16 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
US9667154B2 (en) | 2015-09-18 | 2017-05-30 | Power Integrations, Inc. | Demand-controlled, low standby power linear shunt regulator |
US9602009B1 (en) | 2015-12-08 | 2017-03-21 | Power Integrations, Inc. | Low voltage, closed loop controlled energy storage circuit |
US9629218B1 (en) | 2015-12-28 | 2017-04-18 | Power Integrations, Inc. | Thermal protection for LED bleeder in fault condition |
US10205024B2 (en) * | 2016-02-05 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure having field plate and associated fabricating method |
DE102016104757B4 (de) * | 2016-03-15 | 2021-12-02 | Infineon Technologies Austria Ag | Halbleitertransistor und Verfahren zum Bilden des Halbleitertransistors |
US10490548B2 (en) | 2016-04-08 | 2019-11-26 | Power Integrations, Inc. | Integrated resistor for semiconductor device |
US9786784B1 (en) | 2016-05-27 | 2017-10-10 | Samsung Electronics Co., Ltd. | Vertical field effect transistor and method of fabricating the same |
CN106328718B (zh) * | 2016-11-04 | 2024-06-25 | 南京涟沫动漫文化传播有限公司 | 一种台面二极管 |
US10135357B1 (en) | 2017-09-07 | 2018-11-20 | Power Integrations, Inc. | Threshold detection with tap |
US11189689B2 (en) * | 2017-10-05 | 2021-11-30 | Mitsubishi Electric Corporation | Semiconductor device including an active region that includes a switchable current path |
CN109346524B (zh) * | 2018-09-30 | 2020-06-02 | 重庆大学 | 一种具有阶梯浓度多晶硅侧墙结构的超结vdmos器件 |
EP3905335A1 (en) * | 2020-04-28 | 2021-11-03 | Infineon Technologies AG | Group iii nitride-based transistor device |
CN113690301B (zh) * | 2020-05-18 | 2024-01-26 | 华润微电子(重庆)有限公司 | 半导体器件及其制备方法 |
CN115050816B (zh) * | 2022-08-12 | 2022-10-21 | 无锡新洁能股份有限公司 | 一种高速平面栅功率器件及其制造方法 |
Family Cites Families (186)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638867A (en) | 1979-09-07 | 1981-04-14 | Hitachi Ltd | Insulated gate type field effect transistor |
US4343015A (en) * | 1980-05-14 | 1982-08-03 | General Electric Company | Vertical channel field effect transistor |
JPS5712557A (en) | 1980-06-25 | 1982-01-22 | Sanyo Electric Co Ltd | High dielectric resisting mos transistor |
JPS5710975A (en) | 1980-06-25 | 1982-01-20 | Sanyo Electric Co Ltd | High dielectric strength high transistor |
JPS5712558A (en) | 1980-06-25 | 1982-01-22 | Sanyo Electric Co Ltd | Mos transistor having high withstand voltage |
GB2089119A (en) | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
US4626879A (en) | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
US4738936A (en) | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
US4626789A (en) | 1983-08-19 | 1986-12-02 | Hitachi, Ltd. | Demodulating circuit for data signal |
JPS6064471A (ja) | 1983-09-19 | 1985-04-13 | Nec Corp | 高電圧絶縁ゲ−ト型電界効果トランジスタ |
US4531173A (en) | 1983-11-02 | 1985-07-23 | Motorola, Inc. | Protective power foldback circuit for a power semiconductor |
US4618541A (en) | 1984-12-21 | 1986-10-21 | Advanced Micro Devices, Inc. | Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article |
JPS61168253A (ja) * | 1985-01-19 | 1986-07-29 | Sharp Corp | 高耐圧mos電界効果半導体装置 |
US4665426A (en) | 1985-02-01 | 1987-05-12 | Advanced Micro Devices, Inc. | EPROM with ultraviolet radiation transparent silicon nitride passivation layer |
US4667173A (en) * | 1985-08-29 | 1987-05-19 | Kabushiki Kaisha Toshiba | Line filter |
US4963951A (en) | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
US4764800A (en) | 1986-05-07 | 1988-08-16 | Advanced Micro Devices, Inc. | Seal structure for an integrated circuit |
US4769685A (en) | 1986-10-27 | 1988-09-06 | General Motors Corporation | Recessed-gate junction-MOS field effect transistor |
US4796070A (en) * | 1987-01-15 | 1989-01-03 | General Electric Company | Lateral charge control semiconductor device and method of fabrication |
US5010024A (en) | 1987-03-04 | 1991-04-23 | Advanced Micro Devices, Inc. | Passivation for integrated circuit structures |
US4811075A (en) | 1987-04-24 | 1989-03-07 | Power Integrations, Inc. | High voltage MOS transistors |
US4890144A (en) * | 1987-09-14 | 1989-12-26 | Motorola, Inc. | Integrated circuit trench cell |
US5362711A (en) * | 1987-09-21 | 1994-11-08 | Kanegafuchi Chemical Industry Co., Ltd. | Method for producing single crystal superconducting LnA2 Cu3 O7-x films |
JPH0734471B2 (ja) * | 1987-09-24 | 1995-04-12 | 三菱電機株式会社 | 電界効果型半導体装置 |
EP0308612B1 (en) | 1987-09-24 | 1994-10-12 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor and manufacturing method thereof |
JPH01112764A (ja) | 1987-10-27 | 1989-05-01 | Nec Corp | 半導体装置 |
US4926074A (en) | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
US4939566A (en) | 1987-10-30 | 1990-07-03 | North American Philips Corporation | Semiconductor switch with parallel DMOS and IGT |
US4890146A (en) | 1987-12-16 | 1989-12-26 | Siliconix Incorporated | High voltage level shift semiconductor device |
US4922327A (en) | 1987-12-24 | 1990-05-01 | University Of Toronto Innovations Foundation | Semiconductor LDMOS device with upper and lower passages |
EP0325379B1 (en) | 1988-01-14 | 1997-03-19 | Kabushiki Kaisha Toshiba | Value determining method for line filter and its components |
US4929987A (en) | 1988-02-01 | 1990-05-29 | General Instrument Corporation | Method for setting the threshold voltage of a power mosfet |
US5025296A (en) | 1988-02-29 | 1991-06-18 | Motorola, Inc. | Center tapped FET |
US5283201A (en) * | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
JPH0775260B2 (ja) | 1988-06-01 | 1995-08-09 | 株式会社日立製作所 | 半導体装置 |
US5237193A (en) | 1988-06-24 | 1993-08-17 | Siliconix Incorporated | Lightly doped drain MOSFET with reduced on-resistance |
DE68926384T2 (de) | 1988-11-29 | 1996-10-10 | Toshiba Kawasaki Kk | Lateraler Leitfähigkeitsmodulations-MOSFET |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
US5179362A (en) * | 1989-12-15 | 1993-01-12 | Kabushiki Kaisha Toshiba | Power line filter |
US5008794A (en) | 1989-12-21 | 1991-04-16 | Power Integrations, Inc. | Regulated flyback converter with spike suppressing coupled inductors |
JP2877408B2 (ja) | 1990-01-12 | 1999-03-31 | 株式会社東芝 | 導電変調型mosfet |
JP2597412B2 (ja) | 1990-03-20 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5040045A (en) | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
US5126807A (en) * | 1990-06-13 | 1992-06-30 | Kabushiki Kaisha Toshiba | Vertical MOS transistor and its production method |
US5242845A (en) * | 1990-06-13 | 1993-09-07 | Kabushiki Kaisha Toshiba | Method of production of vertical MOS transistor |
JP2599493B2 (ja) | 1990-08-27 | 1997-04-09 | 松下電子工業株式会社 | 半導体装置 |
JP2991753B2 (ja) | 1990-08-27 | 1999-12-20 | 松下電子工業株式会社 | 半導体装置及びその製造方法 |
US5072268A (en) | 1991-03-12 | 1991-12-10 | Power Integrations, Inc. | MOS gated bipolar transistor |
US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5146298A (en) | 1991-08-16 | 1992-09-08 | Eklund Klas H | Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor |
US5164891A (en) | 1991-08-21 | 1992-11-17 | Power Integrations, Inc. | Low noise voltage regulator and method using a gated single ended oscillator |
US5258636A (en) | 1991-12-12 | 1993-11-02 | Power Integrations, Inc. | Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes |
US5270264A (en) | 1991-12-20 | 1993-12-14 | Intel Corporation | Process for filling submicron spaces with dielectric |
US5744851A (en) * | 1992-01-27 | 1998-04-28 | Harris Corporation | Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions |
US5285367A (en) | 1992-02-07 | 1994-02-08 | Power Integrations, Inc. | Linear load circuit to control switching power supplies under minimum load conditions |
JP3435173B2 (ja) | 1992-07-10 | 2003-08-11 | 株式会社日立製作所 | 半導体装置 |
US5294824A (en) * | 1992-07-31 | 1994-03-15 | Motorola, Inc. | High voltage transistor having reduced on-resistance |
US5285369A (en) * | 1992-09-01 | 1994-02-08 | Power Integrations, Inc. | Switched mode power supply integrated circuit with start-up self-biasing |
US5323044A (en) | 1992-10-02 | 1994-06-21 | Power Integrations, Inc. | Bi-directional MOSFET switch |
DE4237110A1 (de) | 1992-11-03 | 1994-05-05 | Willi Waelte Elektronik Ingeni | Hydraulische Bremse für Fahrräder |
US5326711A (en) * | 1993-01-04 | 1994-07-05 | Texas Instruments Incorporated | High performance high voltage vertical transistor and method of fabrication |
JP3076468B2 (ja) | 1993-01-26 | 2000-08-14 | 松下電子工業株式会社 | 半導体装置 |
US5274259A (en) | 1993-02-01 | 1993-12-28 | Power Integrations, Inc. | High voltage transistor |
US5313082A (en) | 1993-02-16 | 1994-05-17 | Power Integrations, Inc. | High voltage MOS transistor with a low on-resistance |
DE4309764C2 (de) | 1993-03-25 | 1997-01-30 | Siemens Ag | Leistungs-MOSFET |
US5349225A (en) | 1993-04-12 | 1994-09-20 | Texas Instruments Incorporated | Field effect transistor with a lightly doped drain |
JP3198200B2 (ja) * | 1993-04-30 | 2001-08-13 | 株式会社東芝 | 縦型mosトランジスタの製造方法 |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
DE69322963T2 (de) | 1993-09-17 | 1999-06-24 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Eine integrierte Vorrichtung mit einem bipolaren Transistor und einem MOSFET Transistor in Emittorschaltungsanordnung |
US5523604A (en) | 1994-05-13 | 1996-06-04 | International Rectifier Corporation | Amorphous silicon layer for top surface of semiconductor device |
CN1040814C (zh) | 1994-07-20 | 1998-11-18 | 电子科技大学 | 一种用于半导体器件的表面耐压区 |
US5494853A (en) | 1994-07-25 | 1996-02-27 | United Microelectronics Corporation | Method to solve holes in passivation by metal layout |
US5521105A (en) | 1994-08-12 | 1996-05-28 | United Microelectronics Corporation | Method of forming counter-doped island in power MOSFET |
US5581100A (en) * | 1994-08-30 | 1996-12-03 | International Rectifier Corporation | Trench depletion MOSFET |
US6075259A (en) | 1994-11-14 | 2000-06-13 | North Carolina State University | Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages |
US5550405A (en) | 1994-12-21 | 1996-08-27 | Advanced Micro Devices, Incorporated | Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS |
US5656543A (en) | 1995-02-03 | 1997-08-12 | National Semiconductor Corporation | Fabrication of integrated circuits with borderless vias |
EP0726603B1 (en) * | 1995-02-10 | 1999-04-21 | SILICONIX Incorporated | Trenched field effect transistor with PN depletion barrier |
JP3291958B2 (ja) * | 1995-02-21 | 2002-06-17 | 富士電機株式会社 | バックソースmosfet |
US5670828A (en) | 1995-02-21 | 1997-09-23 | Advanced Micro Devices, Inc. | Tunneling technology for reducing intra-conductive layer capacitance |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US5661322A (en) | 1995-06-02 | 1997-08-26 | Siliconix Incorporated | Bidirectional blocking accumulation-mode trench power MOSFET |
US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
US5659201A (en) | 1995-06-05 | 1997-08-19 | Advanced Micro Devices, Inc. | High conductivity interconnection line |
KR100188096B1 (ko) | 1995-09-14 | 1999-06-01 | 김광호 | 반도체 장치 및 그 제조 방법 |
US5637898A (en) | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
US6097063A (en) | 1996-01-22 | 2000-08-01 | Fuji Electric Co., Ltd. | Semiconductor device having a plurality of parallel drift regions |
JPH09266311A (ja) * | 1996-01-22 | 1997-10-07 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
DE59711481D1 (de) | 1996-02-05 | 2004-05-06 | Infineon Technologies Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
DE19611045C1 (de) * | 1996-03-20 | 1997-05-22 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
EP2043158B1 (en) * | 1996-07-19 | 2013-05-15 | SILICONIX Incorporated | Trench DMOS transistor with trench bottom implant |
US5841166A (en) * | 1996-09-10 | 1998-11-24 | Spectrian, Inc. | Lateral DMOS transistor for RF/microwave applications |
US6207994B1 (en) | 1996-11-05 | 2001-03-27 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
US6168983B1 (en) | 1996-11-05 | 2001-01-02 | Power Integrations, Inc. | Method of making a high-voltage transistor with multiple lateral conduction layers |
US6639277B2 (en) | 1996-11-05 | 2003-10-28 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
KR100228331B1 (ko) | 1996-12-30 | 1999-11-01 | 김영환 | 반도체 소자의 삼중웰 제조 방법 |
JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
EP0856887B1 (en) * | 1997-01-31 | 2004-04-28 | SGS-THOMSON MICROELECTRONICS S.r.l. | Process for forming a morphological edge structure to seal integrated electronic devices, and corresponding device |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
JP3393544B2 (ja) | 1997-02-26 | 2003-04-07 | シャープ株式会社 | 半導体装置の製造方法 |
US6133607A (en) * | 1997-05-22 | 2000-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5869875A (en) * | 1997-06-10 | 1999-02-09 | Spectrian | Lateral diffused MOS transistor with trench source contact |
US6054752A (en) * | 1997-06-30 | 2000-04-25 | Denso Corporation | Semiconductor device |
JPH1197645A (ja) | 1997-09-19 | 1999-04-09 | Nec Corp | 半導体記憶装置 |
US6194283B1 (en) * | 1997-10-29 | 2001-02-27 | Advanced Micro Devices, Inc. | High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers |
US6316807B1 (en) * | 1997-12-05 | 2001-11-13 | Naoto Fujishima | Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same |
US5988833A (en) | 1997-12-15 | 1999-11-23 | Ruud Lighting, Inc. | Adaptable directional floodlight |
EP0965145B1 (en) | 1997-12-24 | 2011-09-21 | Nxp B.V. | A high voltage thin film transistor with improved on-state characteristics and method for making same |
KR100429506B1 (ko) * | 1998-04-18 | 2004-11-20 | 삼성전자주식회사 | 통신시스템의 채널부호/복호장치 및 방법 |
US6362064B2 (en) * | 1998-04-21 | 2002-03-26 | National Semiconductor Corporation | Elimination of walkout in high voltage trench isolated devices |
DE19818300C1 (de) | 1998-04-23 | 1999-07-22 | Siemens Ag | Lateraler Hochvolt-Seitenwandtransistor |
JP3211771B2 (ja) | 1998-05-26 | 2001-09-25 | 日本電気株式会社 | 音声送受信装置 |
DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
DE19854915C2 (de) | 1998-11-27 | 2002-09-05 | Infineon Technologies Ag | MOS-Feldeffekttransistor mit Hilfselektrode |
DE19905421B4 (de) * | 1999-02-10 | 2005-07-28 | Semikron Elektronik Gmbh | Leistungshalbleiterbauelement mit reduzierter Millerkapazität |
US6084277A (en) * | 1999-02-18 | 2000-07-04 | Power Integrations, Inc. | Lateral power MOSFET with improved gate design |
JP2000252465A (ja) | 1999-03-03 | 2000-09-14 | Sony Corp | 半導体装置およびその製造方法 |
US6973140B2 (en) * | 1999-03-05 | 2005-12-06 | Ipr Licensing, Inc. | Maximizing data rate by adjusting codes and code rates in CDMA system |
US6785323B1 (en) * | 1999-11-22 | 2004-08-31 | Ipr Licensing, Inc. | Variable rate coding for forward link |
JP2000260778A (ja) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP2000349288A (ja) | 1999-06-09 | 2000-12-15 | Fuji Electric Co Ltd | 縦型mosfet |
GB9917099D0 (en) | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
DE19935442C1 (de) * | 1999-07-28 | 2000-12-21 | Siemens Ag | Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors |
JP3971062B2 (ja) * | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
US6365932B1 (en) | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
US6127703A (en) * | 1999-08-31 | 2000-10-03 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region |
JP3704007B2 (ja) * | 1999-09-14 | 2005-10-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
EP1111687B1 (en) | 1999-12-22 | 2011-06-22 | Panasonic Electric Works Co., Ltd. | MOS semiconductor device |
US6489653B2 (en) | 1999-12-27 | 2002-12-03 | Kabushiki Kaisha Toshiba | Lateral high-breakdown-voltage transistor |
GB0003185D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | An insulated gate field effect device |
US6312993B1 (en) * | 2000-02-29 | 2001-11-06 | General Semiconductor, Inc. | High speed trench DMOS |
DE10014660C2 (de) * | 2000-03-24 | 2002-08-29 | Infineon Technologies Ag | Halbleiteranordnung mit einer durch einen Hohlraum von einer Driftstrecke getrennten Trenchelektrode |
US6781194B2 (en) | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
JP4528460B2 (ja) | 2000-06-30 | 2010-08-18 | 株式会社東芝 | 半導体素子 |
JP3908455B2 (ja) * | 2000-10-18 | 2007-04-25 | ユニ・チャーム株式会社 | 使い捨てのパンツ型おむつ |
CA2360031C (en) | 2000-10-30 | 2006-06-20 | Thomas & Betts International, Inc. | Capacitive test point voltage and phasing detector |
US6586833B2 (en) * | 2000-11-16 | 2003-07-01 | Silicon Semiconductor Corporation | Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines |
US6468847B1 (en) | 2000-11-27 | 2002-10-22 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6768171B2 (en) | 2000-11-27 | 2004-07-27 | Power Integrations, Inc. | High-voltage transistor with JFET conduction channels |
US6509220B2 (en) | 2000-11-27 | 2003-01-21 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6424007B1 (en) | 2001-01-24 | 2002-07-23 | Power Integrations, Inc. | High-voltage transistor with buried conduction layer |
US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
TW543146B (en) | 2001-03-09 | 2003-07-21 | Fairchild Semiconductor | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
EP2381480A1 (en) | 2001-04-04 | 2011-10-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a drain layer |
JP4198469B2 (ja) * | 2001-04-11 | 2008-12-17 | シリコン・セミコンダクター・コーポレイション | パワーデバイスとその製造方法 |
US6853033B2 (en) * | 2001-06-05 | 2005-02-08 | National University Of Singapore | Power MOSFET having enhanced breakdown voltage |
JP4421144B2 (ja) | 2001-06-29 | 2010-02-24 | 株式会社東芝 | 半導体装置 |
US6683344B2 (en) * | 2001-09-07 | 2004-01-27 | Ixys Corporation | Rugged and fast power MOSFET and IGBT |
US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US7786533B2 (en) | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
US6555873B2 (en) | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US6555883B1 (en) | 2001-10-29 | 2003-04-29 | Power Integrations, Inc. | Lateral power MOSFET for high switching speeds |
US6552597B1 (en) * | 2001-11-02 | 2003-04-22 | Power Integrations, Inc. | Integrated circuit with closely coupled high voltage output and offline transistor pair |
US6738277B2 (en) * | 2001-11-27 | 2004-05-18 | Power Integrations, Inc. | Method and apparatus for balancing active capacitor leakage current |
DE10214151B4 (de) * | 2002-03-28 | 2007-04-05 | Infineon Technologies Ag | Halbleiterbauelement mit erhöhter Durchbruchspannung im Randbereich |
US6583663B1 (en) | 2002-04-22 | 2003-06-24 | Power Integrations, Inc. | Power integrated circuit with distributed gate driver |
JP4107877B2 (ja) | 2002-05-16 | 2008-06-25 | セイコーインスツル株式会社 | 半導体不揮発性メモリ装置 |
JP2004022700A (ja) * | 2002-06-14 | 2004-01-22 | Sanyo Electric Co Ltd | 半導体装置 |
US6865093B2 (en) | 2003-05-27 | 2005-03-08 | Power Integrations, Inc. | Electronic circuit control element with tap element |
US6990729B2 (en) * | 2003-09-05 | 2006-01-31 | Harris Corporation | Method for forming an inductor |
US7183610B2 (en) | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
KR100629263B1 (ko) * | 2004-07-23 | 2006-09-29 | 삼성전자주식회사 | 리세스된 게이트 전극을 갖는 모스 트랜지스터 및 그제조방법 |
JP4333519B2 (ja) * | 2004-08-18 | 2009-09-16 | サンケン電気株式会社 | スイッチング電源装置 |
US20060086974A1 (en) | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
US7135748B2 (en) | 2004-10-26 | 2006-11-14 | Power Integrations, Inc. | Integrated circuit with multi-length output transistor segment |
US7436039B2 (en) | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
JP4791094B2 (ja) * | 2005-07-05 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 電源回路 |
US7355831B2 (en) * | 2005-09-15 | 2008-04-08 | Gm Global Technology Operations, Inc. | Y-capacitance fault current discharge compensation for HVDC systems |
US7381618B2 (en) | 2006-10-03 | 2008-06-03 | Power Integrations, Inc. | Gate etch process for a high-voltage FET |
US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
US7939853B2 (en) | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
US7875962B2 (en) | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
US7964912B2 (en) | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US7893754B1 (en) | 2009-10-02 | 2011-02-22 | Power Integrations, Inc. | Temperature independent reference circuit |
BR112014023690B1 (pt) | 2012-03-29 | 2021-04-13 | Borealis Ag | Composição polimérica compreendendo copolímero de propileno e elastômero à base de estireno, película e recipiente obtidos da composição |
-
2001
- 2001-09-07 US US09/948,879 patent/US6635544B2/en not_active Expired - Lifetime
-
2002
- 2002-07-31 JP JP2002258264A patent/JP4284428B2/ja not_active Expired - Fee Related
- 2002-08-16 EP EP10184810A patent/EP2264747A3/en not_active Withdrawn
- 2002-08-16 EP EP10184815A patent/EP2270843A3/en not_active Withdrawn
- 2002-08-16 EP EP10184211A patent/EP2264746A3/en not_active Withdrawn
- 2002-08-16 EP EP02255737A patent/EP1291907A3/en not_active Withdrawn
- 2002-08-16 EP EP04078373A patent/EP1536464A3/en not_active Ceased
- 2002-10-22 US US10/278,551 patent/US6750105B2/en not_active Expired - Lifetime
- 2002-10-22 US US10/278,432 patent/US6667213B2/en not_active Expired - Lifetime
-
2003
- 2003-11-25 US US10/722,792 patent/US6838346B2/en not_active Expired - Fee Related
-
2004
- 2004-06-17 JP JP2004179789A patent/JP4744101B2/ja not_active Expired - Fee Related
- 2004-12-23 US US11/021,933 patent/US7253042B2/en not_active Expired - Fee Related
-
2007
- 2007-05-29 US US11/807,531 patent/US7745291B2/en not_active Expired - Fee Related
-
2009
- 2009-04-18 US US12/386,392 patent/US7998817B2/en not_active Expired - Fee Related
-
2011
- 2011-03-25 JP JP2011067774A patent/JP5419913B2/ja not_active Expired - Fee Related
- 2011-08-12 US US13/136,843 patent/US8940605B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1291907A2 (en) | 2003-03-12 |
US20030057524A1 (en) | 2003-03-27 |
US6838346B2 (en) | 2005-01-04 |
US7998817B2 (en) | 2011-08-16 |
EP1536464A2 (en) | 2005-06-01 |
US6635544B2 (en) | 2003-10-21 |
US6750105B2 (en) | 2004-06-15 |
US20050104121A1 (en) | 2005-05-19 |
EP1291907A3 (en) | 2004-02-04 |
US6667213B2 (en) | 2003-12-23 |
US8940605B2 (en) | 2015-01-27 |
EP1536464A3 (en) | 2008-08-06 |
EP2270843A2 (en) | 2011-01-05 |
JP5419913B2 (ja) | 2014-02-19 |
US7253042B2 (en) | 2007-08-07 |
EP2264746A3 (en) | 2011-01-26 |
JP4284428B2 (ja) | 2009-06-24 |
JP2004312037A (ja) | 2004-11-04 |
US20030060001A1 (en) | 2003-03-27 |
JP2003204064A (ja) | 2003-07-18 |
US20070293002A1 (en) | 2007-12-20 |
EP2264747A2 (en) | 2010-12-22 |
US20030049930A1 (en) | 2003-03-13 |
US20040082122A1 (en) | 2004-04-29 |
US20090233407A1 (en) | 2009-09-17 |
EP2264747A3 (en) | 2011-02-02 |
US20120015491A1 (en) | 2012-01-19 |
EP2264746A2 (en) | 2010-12-22 |
US7745291B2 (en) | 2010-06-29 |
JP2011159987A (ja) | 2011-08-18 |
EP2270843A3 (en) | 2011-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4744101B2 (ja) | 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 | |
JP5354808B2 (ja) | 基板上に高電圧トランジスタを作製する方法 | |
JP5403747B2 (ja) | 多層拡張ドレイン構造を有する高電圧縦型トランジスタ | |
US7459366B2 (en) | High-voltage vertical transistor with a multi-gradient drain doping profile |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071105 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080205 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080208 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080304 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080623 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081016 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081204 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20090114 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20090220 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110325 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110510 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |