JP4257844B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4257844B2 JP4257844B2 JP2003374108A JP2003374108A JP4257844B2 JP 4257844 B2 JP4257844 B2 JP 4257844B2 JP 2003374108 A JP2003374108 A JP 2003374108A JP 2003374108 A JP2003374108 A JP 2003374108A JP 4257844 B2 JP4257844 B2 JP 4257844B2
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Description
図1(a)は第1の実施形態に係る半導体装置を示す斜視図である。図1(b)は図1(a)の正面を上下を逆にして示した図であり、図1(c)は図1(a)のA−A線断面図である。なお、これ以降に説明する断面図においては、図を見やすくするためにハッチングは省略している。
第2の実施形態に係る半導体装置の断面を図4(a)に示す。本実施形態においては第1のマーク19aが第1の金属配線21と同時に形成されている。そのため、第1の実施形態に比べて第1のマーク19aの厚みが小さい。それ以外の構成および製造方法、作用効果などについては第1の実施形態と同じである。
第3の実施形態に係る半導体装置の断面を図4(b)に示す。本実施形態においては、第2の実施形態での第1のマーク19aの上に第2の金属配線17と同時に形成される第2のマーク19bが形成されている。このようにすることにより、側面80から露出するマーク部28の形状を複雑にすることができ、マークの個数が少なくても多くの情報を盛り込むことができるようになる。それ以外の構成および製造方法、作用効果などについては第1の実施形態と同じである。
第4の実施形態に係る半導体装置の断面を図5に示す。本実施形態では、第1のマーク19cが、第1の金属配線21を介して素子電極11と電気的に接続されている。つまり、本実施形態は、第1の実施形態において第1の金属配線21が素子領域を越えてスクライブライン18にまで延びるように形成されていて、その延びている第1の金属配線21の上に第1のマーク19cが形成されている。それ以外の構成および製造方法、作用効果などは第1の実施形態と同じである。
第5の実施形態に係る半導体装置の斜視図を図6(c)に示し、その製造工程の一部を断面にて図6(a)、(b)に示す。
図7(a)は第6の実施形態に係る半導体装置を示す斜視図である。図7(b)は図7(a)の正面を上下を逆にして示した図であり、図7(c)は図7(a)のB−B線断面図である。本実施形態は、半導体装置の厚み方向に複数層のマーク部28a,28bを、間に第二絶縁層22を挟んで形成したものである。最初の第1のマーク19aにより形成されたマーク部28aと、この上に第二絶縁層22を載せてさらにその上に第2のマーク33を設けることで形成されたマーク部28bとは、半導体基板10表面からの距離が異なっている。このようにマーク部28a,28bが積み重なって多層化構造となることで、半導体装置の方向及び更に多くの製品情報量(識別情報)を含むマークの形成を可能とするものである。製品情報としては、特にロット番号においては、製造年、製造月、製造週といった内容を含むことが可能となり、より多くの製品情報の表示は更に正確な製品のトレサビリティを確保することが出来る。また、このマークをバーコード方式として用いることもできる。
11 素子電極
12 第一絶縁層
13 薄膜金属層
15 厚膜金属層
17 第2の金属配線
18 スクライブライン
19 第1のマーク
19a 第1のマーク
19b 第1のマーク
19c 第1のマーク
20 ランド
21 第1の金属配線
22 第二絶縁層
23 外部接続端子
26 半導体装置
27 半導体装置の集合体
28 マーク部
28a マーク部
28b マーク部
32 第三絶縁層
33 第2のマーク
40 開口部
45 突出部
80 側面
Claims (11)
- 半導体基板と、
前記半導体基板表面上に形成された素子電極と、
少なくとも前記素子電極上に開口部を設けて前記半導体基板上に形成されている第一絶縁層と、
前記素子電極上から前記第一絶縁層の一部の上に亘って形成された第1の金属配線と、
前記第1の金属配線の一部の表面上に形成された第2の金属配線と、
前記第2の金属配線の表面を除いて前記半導体基板の上方に形成された第二絶縁層と、
前記第二絶縁層から露出した前記第2の金属配線の上に形成された外部接続端子と
を備えた半導体装置であって、
前記半導体基板表面に垂直な前記半導体装置の側面のうち前記第二絶縁層により構成された部分には、金属からなる複数のマーク部が露出しており、該マーク部の上面の少なくとも一部には前記第二絶縁層が形成されている、半導体装置。 - 複数の前記マーク部は、前記半導体装置の製品情報及び方向の少なくとも一方を示す識別記号を構成している、請求項1に記載の半導体装置。
- 前記半導体基板表面は矩形であり、前記マーク部は、互いに平行な2つの前記側面に露出している、請求項1または2に記載の半導体装置。
- 前記側面において前記第二絶縁層が階段形状を有しており、該階段形状の段差部分において前記マーク部の上面の一部がさらに露出している、請求項1から3のいずれか一つに記載の半導体装置。
- 前記マーク部は、前記素子電極に電気的に接続されている、請求項1から4のいずれか一つに記載の半導体装置。
- 一部の前記マーク部と他の前記マーク部の少なくとも一部とは、前記半導体基板表面からの距離が異なっている、請求項1から5のいずれか一つに記載の半導体装置。
- 表面上に素子電極が形成され、ウェハからなる半導体基板の上に第一絶縁層を形成し、前記素子電極上の前記第一絶縁層を除去する工程Sと、
前記素子電極上から前記第一絶縁層上に亘って第1の金属配線を形成する工程TAと、
前記第1の金属配線の一部の表面上に第2の金属配線を形成する工程TBと、
前記半導体基板の素子領域とスクライブラインとにまたがってマーク部となる金属層を形成する工程Uと、
工程TA、TBおよび工程Uの後に、前記第2の金属配線の表面上を除いて前記半導体基板上方全面に第二絶縁層を形成する工程Vと、
前記第2の金属配線の表面上に外部接続端子を形成する工程Wと、
前記半導体基板を前記スクライブラインの位置において切断して個別の半導体装置とする工程Xと
を含む、半導体装置の製造方法。 - 前記工程Uでは、前記工程Xにより個別とされた前記半導体装置の少なくとも一つの切断面に複数の前記マーク部が露出するように前記金属層を形成する、請求項7に記載の半導体装置の製造方法。
- 前記工程TBと前記工程Uとは同時に行われる、請求項7または8に記載の半導体装置の製造方法。
- 前記工程Xは、
前記金属層が露出するまで前記スクライブラインの位置において前記第二絶縁層を第一の幅で切削する工程X1と、
前記第一の幅よりも小さい第二の幅で、前記第一の幅で切削され前記金属層が露出した切削面の中央部を切削して前記半導体基板を切断する工程X2と
を含む、請求項7から9のいずれか一つに記載の半導体装置の製造方法。 - 前記工程Uおよび工程Vにおいて、前記金属層は、間に前記第二絶縁層を挟んで複数層形成される、請求項7から10のいずれか一つに記載の半導体装置の製造方法。
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JP2003374108A JP4257844B2 (ja) | 2003-11-04 | 2003-11-04 | 半導体装置およびその製造方法 |
CNA200410084901XA CN1614771A (zh) | 2003-11-04 | 2004-10-10 | 半导体器件及其制造方法 |
US10/976,914 US20070052106A1 (en) | 2003-11-04 | 2004-11-01 | Semiconductor device and method for fabricating the same |
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US7686222B2 (en) | 2001-07-13 | 2010-03-30 | Hand Held Products, Inc. | Optical reader having a color imager |
US7841532B2 (en) | 1997-10-17 | 2010-11-30 | Hand Held Products, Inc. | Bar code reading device having image processing mode |
US8794522B2 (en) | 2001-05-15 | 2014-08-05 | Hand Held Products, Inc. | Image capture apparatus and method |
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CN100454043C (zh) * | 2005-12-16 | 2009-01-21 | 群康科技(深圳)有限公司 | 增亮膜、背光模组及液晶显示模组 |
JP2008108987A (ja) * | 2006-10-26 | 2008-05-08 | Sharp Corp | 半導体装置並びにこれを用いた表示装置及び電子機器 |
JP4308266B2 (ja) | 2007-01-12 | 2009-08-05 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
JP5078725B2 (ja) | 2008-04-22 | 2012-11-21 | ラピスセミコンダクタ株式会社 | 半導体装置 |
CN102246605B (zh) * | 2008-12-16 | 2013-08-07 | 株式会社村田制作所 | 电路模块 |
JP2010177569A (ja) * | 2009-01-30 | 2010-08-12 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP2011014604A (ja) * | 2009-06-30 | 2011-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US8710630B2 (en) | 2011-07-11 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for marking the orientation of a sawed die |
CN102683173B (zh) * | 2012-03-31 | 2017-03-08 | 上海华虹宏力半导体制造有限公司 | 减少晶圆电弧放电的方法以及集成电路制造方法 |
JP2013229440A (ja) * | 2012-04-25 | 2013-11-07 | Denso Corp | 半導体装置およびその製造に用いられる半導体ウェハ |
JP6369039B2 (ja) * | 2014-02-05 | 2018-08-08 | 日本電気株式会社 | 接続部材、電子部品及び情報表示方法 |
JP6358240B2 (ja) * | 2015-11-19 | 2018-07-18 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
US10276441B2 (en) | 2017-06-30 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protected chip-scale package (CSP) pad structure |
KR20190014993A (ko) * | 2017-08-04 | 2019-02-13 | 에스케이하이닉스 주식회사 | 지시 패턴을 포함하는 반도체 패키지 |
US10535812B2 (en) * | 2017-09-04 | 2020-01-14 | Rohm Co., Ltd. | Semiconductor device |
JP6527269B2 (ja) * | 2018-04-18 | 2019-06-05 | ラピスセミコンダクタ株式会社 | 半導体装置 |
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US5982044A (en) * | 1998-04-24 | 1999-11-09 | Vanguard International Semiconductor Corporation | Alignment pattern and algorithm for photolithographic alignment marks on semiconductor substrates |
JP2000077312A (ja) * | 1998-09-02 | 2000-03-14 | Mitsubishi Electric Corp | 半導体装置 |
JP4132298B2 (ja) * | 1998-10-27 | 2008-08-13 | 株式会社ルネサステクノロジ | 重ね合わせ検査マークを備える半導体装置 |
JP2001144197A (ja) * | 1999-11-11 | 2001-05-25 | Fujitsu Ltd | 半導体装置、半導体装置の製造方法及び試験方法 |
US20040075179A1 (en) * | 2002-10-22 | 2004-04-22 | United Microelectronics Corp | Structural design of alignment mark |
JP4102158B2 (ja) * | 2002-10-24 | 2008-06-18 | 富士通株式会社 | マイクロ構造体の製造方法 |
US7183137B2 (en) * | 2003-12-01 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company | Method for dicing semiconductor wafers |
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- 2004-10-10 CN CNA200410084901XA patent/CN1614771A/zh active Pending
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Cited By (5)
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US7841532B2 (en) | 1997-10-17 | 2010-11-30 | Hand Held Products, Inc. | Bar code reading device having image processing mode |
US8282006B2 (en) | 1997-10-17 | 2012-10-09 | Hand Held Products, Inc. | Imaging device operative for image processing |
US8794522B2 (en) | 2001-05-15 | 2014-08-05 | Hand Held Products, Inc. | Image capture apparatus and method |
US7686222B2 (en) | 2001-07-13 | 2010-03-30 | Hand Held Products, Inc. | Optical reader having a color imager |
US8528818B2 (en) | 2001-07-13 | 2013-09-10 | Hand Held Products, Inc. | Optical reader having an imager |
Also Published As
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TWI241691B (en) | 2005-10-11 |
US20070052106A1 (en) | 2007-03-08 |
CN1614771A (zh) | 2005-05-11 |
TW200516735A (en) | 2005-05-16 |
JP2005142186A (ja) | 2005-06-02 |
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