JP4146829B2 - 結晶製造装置 - Google Patents
結晶製造装置 Download PDFInfo
- Publication number
- JP4146829B2 JP4146829B2 JP2004334865A JP2004334865A JP4146829B2 JP 4146829 B2 JP4146829 B2 JP 4146829B2 JP 2004334865 A JP2004334865 A JP 2004334865A JP 2004334865 A JP2004334865 A JP 2004334865A JP 4146829 B2 JP4146829 B2 JP 4146829B2
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- JP
- Japan
- Prior art keywords
- crystal
- crucible
- seed crystal
- seed
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
2,12,22,32 原料、原料溶液
3,13,23,33 結晶、成長結晶
4,14,24,34 種子結晶
5,15,25,35 炉内温度分布
6 発熱体
7,17 欠陥
Claims (1)
- 炉内に保持されたるつぼ内に種子結晶を配置し、前記るつぼ内に充填された原料溶液を加熱溶解し、前記るつぼの下方より上方に向かって、前記原料溶液を徐冷することにより結晶成長させる結晶製造装置において、
前記種子結晶の欠陥が成長する結晶の外周部を伝播するように、前記種子結晶は、前記るつぼの中心軸から離れた位置に配置されていることを特徴とする結晶製造装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004334865A JP4146829B2 (ja) | 2004-11-18 | 2004-11-18 | 結晶製造装置 |
Applications Claiming Priority (1)
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JP2004334865A JP4146829B2 (ja) | 2004-11-18 | 2004-11-18 | 結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006143516A JP2006143516A (ja) | 2006-06-08 |
JP4146829B2 true JP4146829B2 (ja) | 2008-09-10 |
Family
ID=36623634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004334865A Expired - Fee Related JP4146829B2 (ja) | 2004-11-18 | 2004-11-18 | 結晶製造装置 |
Country Status (1)
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JP (1) | JP4146829B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7023458B2 (ja) * | 2017-08-14 | 2022-02-22 | 住友金属鉱山株式会社 | 単結晶育成方法 |
DE102019208389A1 (de) * | 2019-06-07 | 2020-12-10 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von Restspannungs- und versetzungsfreien AIII-BV-Substratwafern |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107997A (ja) * | 1982-12-06 | 1984-06-22 | Natl Inst For Res In Inorg Mater | 無機複合酸化物の単結晶育成法 |
JPS60118692A (ja) * | 1983-11-30 | 1985-06-26 | Hitachi Cable Ltd | 単結晶の製造方法 |
JPH0751477B2 (ja) * | 1986-12-26 | 1995-06-05 | 浜松ホトニクス株式会社 | 単結晶育成方法 |
JPH01164790A (ja) * | 1987-12-18 | 1989-06-28 | Hitachi Cable Ltd | 半導体単結晶の製造方法 |
JPH0431387A (ja) * | 1990-05-28 | 1992-02-03 | Kyushu Electron Metal Co Ltd | 単結晶育成方法 |
JP3391503B2 (ja) * | 1993-04-13 | 2003-03-31 | 同和鉱業株式会社 | 縦型ボート法による化合物半導体単結晶の製造方法 |
JPH07157390A (ja) * | 1993-12-02 | 1995-06-20 | Fujitsu Ltd | 単結晶製造方法 |
JPH07277880A (ja) * | 1994-04-05 | 1995-10-24 | Hitachi Metals Ltd | 酸化物単結晶およびその製造方法 |
JP2002348195A (ja) * | 2001-03-19 | 2002-12-04 | Asahi Techno Glass Corp | ニオブ酸カリウム単結晶の単分域化処理方法 |
-
2004
- 2004-11-18 JP JP2004334865A patent/JP4146829B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006143516A (ja) | 2006-06-08 |
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