KR100753322B1 - 결정 제조 방법 및 장치 - Google Patents
결정 제조 방법 및 장치 Download PDFInfo
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- KR100753322B1 KR100753322B1 KR1020067004839A KR20067004839A KR100753322B1 KR 100753322 B1 KR100753322 B1 KR 100753322B1 KR 1020067004839 A KR1020067004839 A KR 1020067004839A KR 20067004839 A KR20067004839 A KR 20067004839A KR 100753322 B1 KR100753322 B1 KR 100753322B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (15)
- 로 내에 유지된 도가니 내의 원료를 가열 액화하고, 상기 도가니의 하방부터 상방을 향하여, 상기 원료를 서냉함에 의해 결정 성장시키는 결정 제조 방법에 있어서,상기 도가니가 유지된 로 내의 상하 방향의 온도 분포에 있어서, 하방에 결정화 온도보다 낮은 저온 영역과, 그 상방에 결정화 온도보다 높은 고온 영역을 포함하도록 가열 히터를 조정하고,상기 도가니의 상방에 설치된 원료 공급 장치로부터 공급되는 보급 원료를, 상기 고온 영역과 같은 온도로 가열하여 상기 도가니에 공급하는 것을 특징으로 하는 결정 제조 방법
- 제 1항에 있어서,상기 고온 영역의 온도는, 소킹 온도(soaking temperature)인 것을 특징으로 하는 결정 제조 방법.
- 제 1항에 있어서,상기 고온 영역의 온도는, 과가열 처리 온도인 것을 특징으로 하는 결정 제조 방법.
- 제 1항에 있어서,상기 결정의 주성분은, 주기율표 Ia족과 Va족의 산화물 또는 탄산염으로 구성되어 있고, Ia족은 리튬, 칼륨이고, Va족은 니오붐, 탄탈의 적어도 하나를 포함하는 것을 특징으로 하는 결정 제조 방법.
- 제 1항에 있어서,상기 결정의 주성분은, 주기율표 Ia족 Va족의 산화물 또는 탄산염으로 구성되어 있고, Ia족은 리튬, 칼륨이고, Va족은 니오붐, 탄탈의 적어도 하나를 포함하고, 첨가 불순물로서 주기율표 Ia, Ⅱa족의 하나 또는 복수종을 포함하는 것을 특징으로 하는 결정 제조 방법.
- 로 내에 유지된 도가니 내의 원료를 가열 액화하고, 상기 도가니의 하방부터 상방을 향하여, 상기 원료를 서냉함에 의해 결정을 성장시키는 결정 제조 장치에 있어서,보급 원료를 공급하는 원료 공급 장치와,상기 도가니의 상방에 설치되고, 상기 원료 공급 장치로부터 공급되는 상기 보급 원료를 액화하고, 액체로서 도가니에 낙하시키는 반사판을 구비한 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 반사판은, 상방으로부터 하방을 향하여 좁아지는 깔때기 형상이고, 저부에, 상기 액체 원료를 도가니에 낙하시킬 수 있는 낙하구가 마련되어 있는 것을 특징으로 하는 결정 제조 장치.
- 제 7항에 있어서,상기 반사판은, 깔때기 형상의 내면에 외연(外緣)으로부터 상기 낙하구를 향하여 복수의 홈을 가지며, 상기 보급 원료가 일정 시간 표면에 유지되어 있도록 한 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 반사판은, 하방을 향하여 넓어지는 나팔 형상인 것을 특징으로 하는 결정 제조 장치.
- 제 9항에 있어서,상기 반사판은, 나팔 형상의 외면에, 중심으로부터 외연을 향하여 복수의 홈을 가지며, 상기 보급 원료가 일정 시간 표면에 유지되어 있도록 한 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 반사판은, 상기 도가니와는 독립적으로 이동할 수 있도록 구성되어 있 는 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 반사판은, 가열 히터를 포함하는 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 원료 공급 장치는, 조성이 다른 복수의 보급 원료마다 설치되고, 해당 보급 원료의 각각의 공급량을 조정할 수 있는 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 결정의 주성분은, 주기율표 Ia족과 Va족의 산화물 또는 탄산염으로 구성되어 있고, Ia족은 리튬, 칼륨이고, Va족은 니오붐, 탄탈의 적어도 하나를 포함하는 것을 특징으로 하는 결정 제조 장치.
- 제 6항에 있어서,상기 결정의 주성분은, 주기율표 Ia족과 Va족의 산화물 또는 탄산염으로 구성되어 있고, Ia족은 리튬, 칼륨이고, Va족은 니오붐, 탄탈의 적어도 하나를 포함하고, 첨가 불순물로서 주기율표 Ia, Ⅱa족의 하나 또는 복수종을 포함하는 것을 특징으로 하는 결정 제조 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004174699 | 2004-06-11 | ||
JPJP-P-2004-00174699 | 2004-06-11 | ||
PCT/JP2005/010719 WO2005121416A1 (ja) | 2004-06-11 | 2005-06-10 | 結晶製造方法および装置 |
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KR20060088538A KR20060088538A (ko) | 2006-08-04 |
KR100753322B1 true KR100753322B1 (ko) | 2007-08-29 |
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KR1020067004839A KR100753322B1 (ko) | 2004-06-11 | 2005-06-10 | 결정 제조 방법 및 장치 |
Country Status (6)
Country | Link |
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US (1) | US7591895B2 (ko) |
EP (1) | EP1757716B1 (ko) |
JP (1) | JP4255972B2 (ko) |
KR (1) | KR100753322B1 (ko) |
CN (1) | CN100570018C (ko) |
WO (1) | WO2005121416A1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4916425B2 (ja) * | 2007-12-04 | 2012-04-11 | 日本電信電話株式会社 | 結晶成長方法およびその装置 |
EP2072645B2 (en) † | 2007-12-19 | 2014-12-24 | Schott AG | Method for producing a monocrystalline or polycrystalline semiconductor material |
CN101736401B (zh) * | 2008-11-10 | 2013-07-24 | Axt公司 | 锗晶体生长的方法和装置 |
JP5446241B2 (ja) * | 2008-12-18 | 2014-03-19 | 国立大学法人信州大学 | 融液組成制御一方向凝固結晶成長装置および結晶成長方法 |
CN102359926B (zh) * | 2011-09-09 | 2013-01-02 | 苏州浩波科技股份有限公司 | 安赛蜜结块周期的测算方法 |
KR101484961B1 (ko) * | 2014-08-08 | 2015-01-22 | 한국기계연구원 | 생체 영감의 표면 구조를 갖는 수지상 3차원 나노 구조체 및 그 제조 방법 |
JP2019006657A (ja) * | 2017-06-28 | 2019-01-17 | 日本電信電話株式会社 | 単結晶成長方法及び単結晶成長装置 |
CN109629003B (zh) * | 2018-12-29 | 2021-05-28 | 珠海鼎泰芯源晶体有限公司 | 一种低浓度p型磷化铟单晶的制备方法 |
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US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
JPS61236681A (ja) | 1985-04-13 | 1986-10-21 | Tohoku Metal Ind Ltd | 単結晶の製造方法及び製造装置 |
JPS6259593A (ja) | 1985-09-09 | 1987-03-16 | Tohoku Metal Ind Ltd | 単結晶製造方法 |
JPS6296387A (ja) | 1985-10-22 | 1987-05-02 | Tohoku Metal Ind Ltd | 単結晶の製造方法 |
JPS62191488A (ja) | 1986-02-17 | 1987-08-21 | Sanyo Electric Co Ltd | 単結晶製造装置 |
US5290395A (en) * | 1990-07-26 | 1994-03-01 | Sumitomo Electric Industries, Ltd. | Method of and apparatus for preparing single crystal |
US5342475A (en) * | 1991-06-07 | 1994-08-30 | The Furukawa Electric Co., Ltd. | Method of growing single crystal of compound semiconductor |
US5785898A (en) * | 1993-04-21 | 1998-07-28 | California Institute Of Technology | Potassium lithium tantalate niobate photorefractive crystals |
US5788764A (en) * | 1995-01-19 | 1998-08-04 | Hoya Corporation | KTP solid solution single crystals and process for the production thereof |
JPH111388A (ja) | 1997-06-10 | 1999-01-06 | Kawatetsu Mining Co Ltd | 単結晶成長方法及び装置 |
WO1999063132A1 (fr) | 1998-05-29 | 1999-12-09 | Toyo Communication Equipement Co., Ltd. | Dispositif et procede servant a fabriquer des monocristaux et monocristal |
KR20020081369A (ko) * | 2000-12-28 | 2002-10-26 | 신에쯔 한도타이 가부시키가이샤 | 단결정 육성방법 및 단결정 육성장치 |
US6673330B1 (en) * | 1999-03-26 | 2004-01-06 | National Institute For Research In Inorganic Materials | Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal |
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Publication number | Priority date | Publication date | Assignee | Title |
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US4521272A (en) * | 1981-01-05 | 1985-06-04 | At&T Technologies, Inc. | Method for forming and growing a single crystal of a semiconductor compound |
JPH06157185A (ja) * | 1992-09-25 | 1994-06-03 | Furukawa Electric Co Ltd:The | 化合物半導体単結晶の成長方法 |
JPH0867592A (ja) * | 1994-08-31 | 1996-03-12 | Sony Corp | Mn−Zn系フェライト単結晶及びMn−Zn系フェライト単結晶の製造方法 |
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2005
- 2005-06-10 KR KR1020067004839A patent/KR100753322B1/ko active IP Right Grant
- 2005-06-10 CN CNB2005800008661A patent/CN100570018C/zh not_active Expired - Fee Related
- 2005-06-10 JP JP2006514595A patent/JP4255972B2/ja active Active
- 2005-06-10 WO PCT/JP2005/010719 patent/WO2005121416A1/ja not_active Application Discontinuation
- 2005-06-10 US US10/571,887 patent/US7591895B2/en active Active
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JPH111388A (ja) | 1997-06-10 | 1999-01-06 | Kawatetsu Mining Co Ltd | 単結晶成長方法及び装置 |
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Also Published As
Publication number | Publication date |
---|---|
CN1842619A (zh) | 2006-10-04 |
EP1757716A1 (en) | 2007-02-28 |
KR20060088538A (ko) | 2006-08-04 |
JPWO2005121416A1 (ja) | 2008-04-10 |
JP4255972B2 (ja) | 2009-04-22 |
WO2005121416A1 (ja) | 2005-12-22 |
EP1757716A4 (en) | 2010-09-15 |
CN100570018C (zh) | 2009-12-16 |
US20080271666A1 (en) | 2008-11-06 |
EP1757716B1 (en) | 2016-08-17 |
US7591895B2 (en) | 2009-09-22 |
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