JP3966332B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP3966332B2 JP3966332B2 JP2005028375A JP2005028375A JP3966332B2 JP 3966332 B2 JP3966332 B2 JP 3966332B2 JP 2005028375 A JP2005028375 A JP 2005028375A JP 2005028375 A JP2005028375 A JP 2005028375A JP 3966332 B2 JP3966332 B2 JP 3966332B2
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- JP
- Japan
- Prior art keywords
- solder
- chip
- substrate
- ball
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- Die Bonding (AREA)
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- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Description
1)max290℃以下での大気中リフロー接続が可能であること〔チップ部品 の耐熱保証温度;290℃〕。
2)2次リフロー(max260℃)で溶けないこと、もしくは溶けてもチップが 動かないこと(高周波特性に影響するため)。
3)2次リフロー時にモジュール内のはんだが再溶融しても、チップ部品 のはんだの体積膨張によるショートがないこと。
また、本発明は、電子部品と基板を接続するはんだとして、表面にSnめっきされたCuボールを有するはんだペーストを用いるものである。
2.Snボール
3.溶融Sn
4.フラックス
5.Snめっき
6.中継基板の端子
7.Au−20Snはんだ
8.ワイヤボンド
9.キャップ
10.接合部
11.外部接続端子
12.印刷パターン
13.素子
14.中継基板
15.抵抗加熱体
16.メタライズ
17.チップ部品
18.Cuパッド
19.基板
20.エッチング
21.溶融はんだ
22.Niめっき
23.Snめっき
24.Ni−Snめっき
25.Siチップ
26.シリコーンゲル
27.Cu−Sn複合はんだ
28.軟らかい樹脂
29.リード
30.Sn−Ag−Cu系Pbフリーはんだ
31.Alフィン
32.フィンとの接合部
33.リードとの接合部
34.バンプ
35.Si基板
36.複合はんだペースト
37.端子
38.端子(Cuパッド)
39.Cu
40.有機材
41.Cuスルーホール導体
42.Ag−Pd導体
43.Al2O3基板
44.厚膜スルーホール導体
45.W−Ni導体
46.Ag−Pt/Ni/Au電極
47.かしめ部
48.樹脂
49.ワイヤボンデイング端子
50.TQFP−LSI
51.リードフレーム
52.熱拡散板
53.タブ
54.導電ペースト
61.キャビテイ
62.スリット
63.半導体装置
64.多数個段取りAl2O3多層セラミック基板
65.スキージ
66.メタルマスク
67.樹脂塗布済み基板
68.高硬度樹脂
69.樹脂圧力
70.はんだ再溶融膨張圧
71.はんだ流れ出し
72.接続端子
73.一括封止部
74.Cu6Sn5
75.部品端子部
76.Pb系はんだ
80.金属ボール(Cuボール)
81.低熱膨張、低剛性樹脂
82.薄膜電極
83.電極端子
84.接触部(金属間化合物)
85.ボール固定用はんだ
86.ワイヤバンピング端子
87.Cu端子
88.Cuめっき
89.ホトレジ
90.ポリイミド絶縁膜
91.Cuバンプ
Claims (9)
- 基板と、前記基板に実装されたチップ部品及び半導体チップとを有する半導体モジュールであって、
前記基板の電極と前記チップ部品とは、
CuボールとSn系はんだとを有する接続材料を用いて、前記Sn系はんだの融点以上であり前記Cuボールの融点以下の温度で接続することにより、
溶融した前記Sn系はんだと前記Cuボールとが反応して形成されたCu6Sn5を含む金属間化合物で接続されていることを特徴とする半導体モジュール。 - 請求項1記載の半導体モジュールであって、
前記金属間化合物は、
さらに前記基板の電極上にメタライズされた金属と、前記接続材料の溶融したSn系はんだとが反応して形成されたものを含むことを特徴とする半導体モジュール。 - 請求項1又は2記載の半導体モジュールであって、
前記Sn系はんだは、Sn、Sn-Cu系はんだ、Sn-Ag系はんだ、Sn-Ag-Cu系はんだのいずれかであることを特徴とする半導体モジュール。 - 請求項1乃至3のいずれかに記載の半導体モジュールであって、
前記チップ部品は、チップ抵抗又はチップコンデンサーであることを特徴とする半導体モジュール。 - 基板と、前記基板に実装されたチップ部品及び半導体チップとを有する半導体モジュールであって、
前記基板の電極と前記チップ部品とは、
Cu粒子と、Cu6Sn5を含む金属間化合物と、
により接続されていることを特徴とする半導体モジュール。 - 請求項5記載の半導体モジュールであって、
前記金属間化合物は更にCu3Snを含むことを特徴とする半導体モジュール。 - 請求項5記載の半導体モジュールであって、
前記Cu粒子の粒径は5μm以上であることを特徴とする半導体モジュール。 - 請求項5乃至7のいずれかに記載の半導体モジュールであって、
前記Cu粒子は、球状、棒状、樹枝状のいずれか、またはこれらを組み合わせたものであることを特徴とする半導体モジュール。 - 請求項5乃至8のいずれかに記載の半導体モジュールであって、
前記チップ部品は、チップ抵抗又はチップコンデンサーであることを特徴とする半導体モジュール。
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KR20030078853A (ko) | 2003-10-08 |
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TWI230104B (en) | 2005-04-01 |
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TWI248842B (en) | 2006-02-11 |
KR20030078854A (ko) | 2003-10-08 |
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US20070031279A1 (en) | 2007-02-08 |
KR100724030B1 (ko) | 2007-06-04 |
KR100428277B1 (ko) | 2004-04-27 |
TWI248384B (en) | 2006-02-01 |
US7075183B2 (en) | 2006-07-11 |
US20020114726A1 (en) | 2002-08-22 |
US20020100986A1 (en) | 2002-08-01 |
JP4788119B2 (ja) | 2011-10-05 |
JP3414388B2 (ja) | 2003-06-09 |
JP3558063B2 (ja) | 2004-08-25 |
KR100724031B1 (ko) | 2007-06-04 |
US8022551B2 (en) | 2011-09-20 |
JP2002254194A (ja) | 2002-09-10 |
US20020171157A1 (en) | 2002-11-21 |
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