JP6061248B2 - 接合方法及び半導体モジュールの製造方法 - Google Patents
接合方法及び半導体モジュールの製造方法 Download PDFInfo
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- JP6061248B2 JP6061248B2 JP2013074087A JP2013074087A JP6061248B2 JP 6061248 B2 JP6061248 B2 JP 6061248B2 JP 2013074087 A JP2013074087 A JP 2013074087A JP 2013074087 A JP2013074087 A JP 2013074087A JP 6061248 B2 JP6061248 B2 JP 6061248B2
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000002245 particle Substances 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 52
- 239000007767 bonding agent Substances 0.000 claims description 50
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000012071 phase Substances 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 17
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 239000007791 liquid phase Substances 0.000 claims description 6
- 239000002923 metal particle Substances 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 8
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910017755 Cu-Sn Inorganic materials 0.000 description 3
- 229910017927 Cu—Sn Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
X=6.8-1.3Ln(t) (1)
ここで、XはCu粒子の残留粒径(μm)、tはTLPS時間(min)である。
X=X0-1.3Ln(t) (2)
ここで、X0は初期のCu粒子の粒径(または平均値)(μm)である。
2 電極
3 基板
4 電極
10 半導体モジュール
A 接合剤
Claims (7)
- 半導体モジュールにおける半導体チップと基板を接合する方法であって、
前記半導体チップ又は前記基板の接合面に、Cu粒子とSn粒子の金属粒子組成比Sn:CuがSn<25.9at.%である、Cu粒子とSn粒子を含むペースト状の接合剤を塗布する工程と、
前記半導体チップの接合面と前記基板の接合面を前記接合剤を介在して合わせる工程と、
Snの融点より高い温度で加熱し、前記接合剤のCuとSnを遷移的液相焼結させて、前記接合剤をCu6Sn5とCu3Snを含む組成にする工程と、
さらに232℃〜415℃の温度範囲で加熱し前記接合剤のCu6Sn5をCu3Snに変化させて、前記接合剤におけるCu3Snの比率を増やし、Cu 3 Snの単相、或いはCu 3 Sn相とCu粒子の平衡組織とする工程と、を有する、接合方法。 - 前記半導体チップの接合面と前記基板の接合面を合わせる前に、Snの融点より低い温度で加熱し、前記接合剤を仮焼結する工程を、さらに有する、請求項1に記載の接合方法。
- 前記仮焼結する工程では、前記接合剤に含まれるペースト溶媒の沸点よりも低い温度で加熱し、前記ペースト溶媒を揮発させる、請求項2に記載の接合方法。
- 前記Cu粒子と前記Sn粒子は、3μm以下の粒径を有する、請求項1〜3のいずれかに記載の接合方法。
- 前記Cu3Snの比率を増やす工程において、Cu3SnとCu粒子の混合相、或いはCu3Snの単相を形成する、請求項1〜4のいずれかに記載の接合方法。
- 前記半導体チップが複数ある場合に、
各半導体チップに対し、前記接合剤を塗布する工程、前記接合面を合わせる工程及び前記接合剤をCu6Sn5とCu3Snを含む組成にする工程をそれぞれ行い、その後、前記複数の半導体チップに対し、前記Cu3Snの比率を増やす工程を一括して行う、請求項1〜5のいずれかに記載の接合方法。 - 請求項1〜6のいずれかに記載の接合方法を有する、半導体モジュールの製造方法。
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JP2013074087A JP6061248B2 (ja) | 2013-03-29 | 2013-03-29 | 接合方法及び半導体モジュールの製造方法 |
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JP2013074087A JP6061248B2 (ja) | 2013-03-29 | 2013-03-29 | 接合方法及び半導体モジュールの製造方法 |
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JP2014199852A JP2014199852A (ja) | 2014-10-23 |
JP6061248B2 true JP6061248B2 (ja) | 2017-01-18 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11038317B2 (en) | 2018-06-14 | 2021-06-15 | Nichia Corporation | Semiconductor device and method of manufacturing the semiconductor device |
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US10541152B2 (en) | 2014-07-31 | 2020-01-21 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
US10568213B2 (en) | 2014-07-31 | 2020-02-18 | Skyworks Solutions, Inc. | Multilayered transient liquid phase bonding |
JP6287759B2 (ja) | 2014-10-30 | 2018-03-07 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6281468B2 (ja) | 2014-10-30 | 2018-02-21 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6029222B1 (ja) | 2015-07-08 | 2016-11-24 | 有限会社 ナプラ | 金属粒子、ペースト、成形体、及び、積層体 |
WO2017100256A1 (en) * | 2015-12-08 | 2017-06-15 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
JP6721329B2 (ja) * | 2015-12-21 | 2020-07-15 | 三菱電機株式会社 | パワー半導体装置およびその製造方法 |
MY194769A (en) * | 2016-04-28 | 2022-12-15 | Hitachi Chemical Co Ltd | Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device |
KR102121439B1 (ko) * | 2016-10-24 | 2020-06-10 | 주식회사 엘지화학 | 금속 페이스트 및 열전 모듈 |
JP2018113679A (ja) | 2016-12-02 | 2018-07-19 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 基板間のキャビティ内に形成されてビアを含む電子デバイスを製造する方法 |
WO2018105127A1 (ja) * | 2016-12-09 | 2018-06-14 | 日立化成株式会社 | 接合体の製造方法、遷移的液相焼結用組成物、焼結体及び接合体 |
JP6631547B2 (ja) * | 2016-12-09 | 2020-01-15 | 株式会社村田製作所 | 積層セラミックコンデンサ |
US11217554B2 (en) * | 2017-06-12 | 2022-01-04 | Ormet Circuits, Inc. | Metallic adhesive compositions having good work lives and thermal conductivity, methods of making same and uses thereof |
JP6915556B2 (ja) | 2018-01-24 | 2021-08-04 | 三菱マテリアル株式会社 | 半導体モジュールの接合層、半導体モジュール及びその製造方法 |
JP6969466B2 (ja) * | 2018-03-20 | 2021-11-24 | 三菱マテリアル株式会社 | 接合用成形体の製造方法及びこの方法で得た接合用成形体を用いた接合方法 |
US11764183B2 (en) | 2018-11-08 | 2023-09-19 | Mitsubishi Electric Corporation | Joint structure, semiconductor device, and method of manufacturing same |
WO2023190080A1 (ja) * | 2022-03-30 | 2023-10-05 | 三井金属鉱業株式会社 | 接合体の製造方法及び被接合体の接合方法 |
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TWI248842B (en) * | 2000-06-12 | 2006-02-11 | Hitachi Ltd | Semiconductor device and semiconductor module |
JP2013038330A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
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Cited By (3)
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US11038317B2 (en) | 2018-06-14 | 2021-06-15 | Nichia Corporation | Semiconductor device and method of manufacturing the semiconductor device |
US11581699B2 (en) | 2018-06-14 | 2023-02-14 | Nichia Corporation | Semiconductor device and method of manufacturing the semiconductor device |
US11949209B2 (en) | 2018-06-14 | 2024-04-02 | Nichia Corporation | Semiconductor device and method of manufacturing the semiconductor device |
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