JP2019055414A - 接合材 - Google Patents
接合材 Download PDFInfo
- Publication number
- JP2019055414A JP2019055414A JP2017181702A JP2017181702A JP2019055414A JP 2019055414 A JP2019055414 A JP 2019055414A JP 2017181702 A JP2017181702 A JP 2017181702A JP 2017181702 A JP2017181702 A JP 2017181702A JP 2019055414 A JP2019055414 A JP 2019055414A
- Authority
- JP
- Japan
- Prior art keywords
- bonding material
- metal particles
- melting point
- point metal
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 71
- 238000002844 melting Methods 0.000 claims abstract description 55
- 230000008018 melting Effects 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 49
- 239000002923 metal particle Substances 0.000 claims abstract description 48
- 230000004907 flux Effects 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 11
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 4
- 239000003870 refractory metal Substances 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000010949 copper Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 239000012190 activator Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 9
- -1 salt organic compounds Chemical class 0.000 description 9
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 150000001298 alcohols Chemical class 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 239000003963 antioxidant agent Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000003078 antioxidant effect Effects 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000002530 phenolic antioxidant Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- MHVJRKBZMUDEEV-UHFFFAOYSA-N (-)-ent-pimara-8(14),15-dien-19-oic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)C=C1CC2 MHVJRKBZMUDEEV-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- OADIZUFHUPTFAG-UHFFFAOYSA-N 2-[2-(2-ethylhexoxy)ethoxy]ethanol Chemical compound CCCCC(CC)COCCOCCO OADIZUFHUPTFAG-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QUUCYKKMFLJLFS-UHFFFAOYSA-N Dehydroabietan Natural products CC1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 QUUCYKKMFLJLFS-UHFFFAOYSA-N 0.000 description 2
- NFWKVWVWBFBAOV-UHFFFAOYSA-N Dehydroabietic acid Natural products OC(=O)C1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 NFWKVWVWBFBAOV-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- NFWKVWVWBFBAOV-MISYRCLQSA-N dehydroabietic acid Chemical compound OC(=O)[C@]1(C)CCC[C@]2(C)C3=CC=C(C(C)C)C=C3CC[C@H]21 NFWKVWVWBFBAOV-MISYRCLQSA-N 0.000 description 2
- 229940118781 dehydroabietic acid Drugs 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- MXYATHGRPJZBNA-KRFUXDQASA-N isopimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@@](C=C)(C)CC2=CC1 MXYATHGRPJZBNA-KRFUXDQASA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- 239000003021 water soluble solvent Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MHVJRKBZMUDEEV-APQLOABGSA-N (+)-Pimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@](C=C)(C)C=C2CC1 MHVJRKBZMUDEEV-APQLOABGSA-N 0.000 description 1
- MELXIJRBKWTTJH-ONEGZZNKSA-N (e)-2,3-dibromobut-2-ene-1,4-diol Chemical compound OC\C(Br)=C(/Br)CO MELXIJRBKWTTJH-ONEGZZNKSA-N 0.000 description 1
- DSESGJJGBBAHNW-UHFFFAOYSA-N (e)-[amino(anilino)methylidene]-phenylazanium;bromide Chemical compound Br.C=1C=CC=CC=1N=C(N)NC1=CC=CC=C1 DSESGJJGBBAHNW-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229940051269 1,3-dichloro-2-propanol Drugs 0.000 description 1
- DEWLEGDTCGBNGU-UHFFFAOYSA-N 1,3-dichloropropan-2-ol Chemical compound ClCC(O)CCl DEWLEGDTCGBNGU-UHFFFAOYSA-N 0.000 description 1
- PSSRAPMBSMSACN-UHFFFAOYSA-N 1,4-dibromobutan-2-ol Chemical compound BrCC(O)CCBr PSSRAPMBSMSACN-UHFFFAOYSA-N 0.000 description 1
- CKNNDWZSFAPUJS-UHFFFAOYSA-N 1,4-dichlorobutan-2-ol Chemical compound ClCC(O)CCCl CKNNDWZSFAPUJS-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- SHROKONEDGZYDR-UHFFFAOYSA-N 2,3-dibromobutane-1,1-diol Chemical compound CC(Br)C(Br)C(O)O SHROKONEDGZYDR-UHFFFAOYSA-N 0.000 description 1
- FJWGRXKOBIVTFA-UHFFFAOYSA-N 2,3-dibromobutanedioic acid Chemical compound OC(=O)C(Br)C(Br)C(O)=O FJWGRXKOBIVTFA-UHFFFAOYSA-N 0.000 description 1
- QWVCIORZLNBIIC-UHFFFAOYSA-N 2,3-dibromopropan-1-ol Chemical compound OCC(Br)CBr QWVCIORZLNBIIC-UHFFFAOYSA-N 0.000 description 1
- ZMYAKSMZTVWUJB-UHFFFAOYSA-N 2,3-dibromopropanoic acid Chemical compound OC(=O)C(Br)CBr ZMYAKSMZTVWUJB-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- GOLGILSVWFKZRQ-UHFFFAOYSA-N 2-amino-5-iodobenzoic acid Chemical compound NC1=CC=C(I)C=C1C(O)=O GOLGILSVWFKZRQ-UHFFFAOYSA-N 0.000 description 1
- QUBNFZFTFXTLKH-UHFFFAOYSA-N 2-aminododecanoic acid Chemical compound CCCCCCCCCCC(N)C(O)=O QUBNFZFTFXTLKH-UHFFFAOYSA-N 0.000 description 1
- XRXMNWGCKISMOH-UHFFFAOYSA-N 2-bromobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1Br XRXMNWGCKISMOH-UHFFFAOYSA-N 0.000 description 1
- IKCLCGXPQILATA-UHFFFAOYSA-N 2-chlorobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1Cl IKCLCGXPQILATA-UHFFFAOYSA-N 0.000 description 1
- SWDNKOFGNPGRPI-UHFFFAOYSA-N 2-hydroxy-5-iodobenzoic acid Chemical compound OC(=O)C1=CC(I)=CC=C1O SWDNKOFGNPGRPI-UHFFFAOYSA-N 0.000 description 1
- WBJWXIQDBDZMAW-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carbonyl chloride Chemical compound C1=CC=CC2=C(C(Cl)=O)C(O)=CC=C21 WBJWXIQDBDZMAW-UHFFFAOYSA-N 0.000 description 1
- KIHBGTRZFAVZRV-UHFFFAOYSA-N 2-hydroxyoctadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)C(O)=O KIHBGTRZFAVZRV-UHFFFAOYSA-N 0.000 description 1
- CJNZAXGUTKBIHP-UHFFFAOYSA-N 2-iodobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1I CJNZAXGUTKBIHP-UHFFFAOYSA-N 0.000 description 1
- KZLYQYPURWXOEW-UHFFFAOYSA-N 2-iodopropanoic acid Chemical compound CC(I)C(O)=O KZLYQYPURWXOEW-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- BFBZHSOXKROMBG-UHFFFAOYSA-N 3,5-dibromo-2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC(Br)=CC(Br)=C1O BFBZHSOXKROMBG-UHFFFAOYSA-N 0.000 description 1
- QEJPOEGPNIVDMK-UHFFFAOYSA-N 3-bromo-2,2-bis(bromomethyl)propan-1-ol Chemical compound OCC(CBr)(CBr)CBr QEJPOEGPNIVDMK-UHFFFAOYSA-N 0.000 description 1
- LRHWMCDZEISUCQ-UHFFFAOYSA-N 3-cyclopropylpyridine-2-carboxylic acid Chemical compound OC(=O)C1=NC=CC=C1C1CC1 LRHWMCDZEISUCQ-UHFFFAOYSA-N 0.000 description 1
- DXOSJQLIRGXWCF-UHFFFAOYSA-N 3-fluorocatechol Chemical compound OC1=CC=CC(F)=C1O DXOSJQLIRGXWCF-UHFFFAOYSA-N 0.000 description 1
- KVBWBCRPWVKFQT-UHFFFAOYSA-N 3-iodobenzoic acid Chemical compound OC(=O)C1=CC=CC(I)=C1 KVBWBCRPWVKFQT-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- MXYATHGRPJZBNA-UHFFFAOYSA-N 4-epi-isopimaric acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)CC1=CC2 MXYATHGRPJZBNA-UHFFFAOYSA-N 0.000 description 1
- AHWPLVADYFRELA-UHFFFAOYSA-N 6-cyclobutylpyridine-2-carboxylic acid Chemical compound OC(=O)C1=CC=CC(C2CCC2)=N1 AHWPLVADYFRELA-UHFFFAOYSA-N 0.000 description 1
- LTUUGSGSUZRPRV-UHFFFAOYSA-N 6-methylpyridine-2-carboxylic acid Chemical compound CC1=CC=CC(C(O)=O)=N1 LTUUGSGSUZRPRV-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- 241000132023 Bellis perennis Species 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGMPVYSXXIOGJY-UHFFFAOYSA-N Fusaric acid Chemical compound CCCCC1=CC=C(C(O)=O)N=C1 DGMPVYSXXIOGJY-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- KGMSWPSAVZAMKR-UHFFFAOYSA-N Me ester-3, 22-Dihydroxy-29-hopanoic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(=C(C)C)C=C1CC2 KGMSWPSAVZAMKR-UHFFFAOYSA-N 0.000 description 1
- KGMSWPSAVZAMKR-ONCXSQPRSA-N Neoabietic acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CCC(=C(C)C)C=C2CC1 KGMSWPSAVZAMKR-ONCXSQPRSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 229910009071 Sn—Zn—Bi Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- PYHXGXCGESYPCW-UHFFFAOYSA-N alpha-phenylbenzeneacetic acid Natural products C=1C=CC=CC=1C(C(=O)O)C1=CC=CC=C1 PYHXGXCGESYPCW-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- AOGYCOYQMAVAFD-UHFFFAOYSA-N chlorocarbonic acid Chemical compound OC(Cl)=O AOGYCOYQMAVAFD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- QOHWJRRXQPGIQW-UHFFFAOYSA-N cyclohexanamine;hydron;bromide Chemical compound Br.NC1CCCCC1 QOHWJRRXQPGIQW-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 125000001664 diethylamino group Chemical class [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 150000007970 thio esters Chemical class 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- UFTFJSFQGQCHQW-UHFFFAOYSA-N triformin Chemical compound O=COCC(OC=O)COC=O UFTFJSFQGQCHQW-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 235000014393 valine Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
- B23K35/288—Al as the principal constituent with Sn or Zn
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3613—Polymers, e.g. resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13399—Coating material
- H01L2224/134—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13411—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29411—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0263—Details about a collection of particles
- H05K2201/0272—Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10015—Non-printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/1003—Non-printed inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10053—Switch
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
【課題】本明細書が開示する技術は、ウィスカが発生し難い接合材を提供する。【解決手段】本明細書が開示する接合材は、高融点金属粒子と、低融点金属粒子と、熱硬化性を有するフラックス樹脂を含んでいる。高融点金属粒子と低融点金属粒子の総質量に対する高融点金属粒子の質量割合は、55〜75%である。さらには、高融点金属粒子の質量割合は、65〜75%の範囲が好ましい。高融点金属粒子は、Cu、Cu合金、Al、Ag、Auのいずれかであり、その粒径が5〜30μmであることが好ましい。低融点金属粒子は、Sn合金であり、その粒径が20〜40μmであることが好ましい。【選択図】なし
Description
本明細書が開示する技術は、接合材に関する。特に、ウィスカが発生し難い接合材に関する。
銅(Cu)などの高融点金属粒子と、スズ合金(Sn合金)などの低融点金属粒子を混合した接合材(はんだ材)が知られている(例えば特許文献1、2)。そのような接合材は、遷移的液相焼結法(Transient Liquid Phase Sintering; TLPS)に適している。上記の接合材は、半導体モジュールの基板への実装など、2回のリフロー工程が必要な実装工程の1次リフローに用いられる。
接合材を用いる場合、ウィスカの抑制が課題である。本明細書が開示する技術は、高融点金属粒子と低融点金属粒子の配合比を限定するとともに、熱硬化性を有するフラックス樹脂を配合することで、ウィスカを抑制することのできる接合材を提供する。
本明細書が開示する接合材は、高融点金属粒子と、低融点金属粒子と、熱硬化性を有するフラックス樹脂を含んでいる接合材である。「高融点金属」とは、「低融点金属」との比較で融点が高い金属を意味する。なお、高融点金属は、特に、Sn−Ag−Cu系の接合材の融点よりも高いことが望ましい。「低融点金属」とは、「高融点金属」との比較で融点が低い金属を意味する。高融点金属粒子と低融点金属粒子の総質量に対する高融点金属粒子の質量割合は、55〜75%である(したがって、低融点金属粒子の質量割合は45〜25%となる)。
上記の質量割合と、熱硬化性を有するフラックス樹脂の配合により、ウィスカの原因となるSn成分は全て高融点金属との合金化に使われ、リフロー後にSn成分は残存しなくなる。それゆえ、ウィスカの発生を抑制することができる。高融点金属粒子の質量割合が55%未満であると、焼結後に低融点金属が残存する。残存する低融点金属はウィスカの発生要因となる。他方、高融点金属粒子の質量割合が75%を超えると、接合材の全体に合金化が進行せず、接合強度不足を生じるおそれがある。なお、高融点金属粒子の質量割合は、65〜75%であることが好ましい。そのような範囲であると、ウィスカの抑制効果と、接合強度の点でバランスがよい。実施例において、ウィスカ抑制効果を確かめた試験の結果を示す。
本明細書が開示する技術の詳細とさらなる改良は以下の「発明を実施するための形態」にて説明する。
本明細書が開示する接合材は、遷移的液相焼結法を利用した導電性接合材であり、260℃以下の温度でリフローすることで焼結が可能である。この接合材は、焼結後は、260℃では再溶融せず、また、ウィスカの発生を抑制できる。本明細書が開示する接合材によれば、従来よりも1次リフローの低温化が可能である。また、本明細書が開示する接合材は、ウィスカの発生を抑えることができる。即ち、焼結後に長時間放置しても導電性のひげが発生しない。それゆえ、焼結後の合金の表面に絶縁樹脂等のコーティング剤を塗布するなどの絶縁対策が不要となる。
本明細書が開示する接合材の技術要素を以下に記す。なお、以下の技術要素は、それぞれ独立した技術要素であって、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。
本明細書が開示する複合材のイメージを図1と図2に示す。図1は、焼結前の接合材10aのイメージ図であり、図2は、焼結後の接合材10bのイメージ図である。焼結前の接合材10aでは、高融点金属粒子12と、低融点金属粒子13aと、熱硬化性を有するフラックス樹脂14aを含んでいる。高融点金属粒子12は、例えば、粒径が5〜15μmのCu粒子である。低融点金属粒子13aは、例えば、粒径が20〜40μmのSn合金である。高融点金属粒子12と低融点金属粒子13aの総質量に対する高融点金属粒子12の質量割合は、例えば65%である。フラックス樹脂14aは、流動性を有しており、高融点金属粒子12と低融点金属粒子13aを包み込んでいる。フラックス樹脂14aが流動性を有しているので、焼結前の接合材10aは、ペースト状である。
焼結後の接合材(図2)では、低融点金属粒子は溶融し、高融点金属粒子の一部と合金化する。図2の符号13bが、合金を表している。固まった合金13bは、高融点金属の残留粒子の全体を覆っており、焼結後の接合材10bは焼結する。また、フラックス樹脂14bは熱硬化する。ウィスカの原因となる低融点金属(図1の低融点金属粒子13a)は、全て合金に使われるので、ウィスカが発生しない。
高融点金属粒子は、Sn−Ag−Cu系の接合材よりも融点が高い金属(金属合金)であればよい。高融点金属粒子は、Cu、Cu合金、Al、Ag、Auのいずれかであり、その粒径が5〜35μmであるとよい。高融点金属粒子は、特にCu粒子であることが望ましい。また、粒子径が5μm未満であると、粒子の凝集力が上昇し、接合材のペーストを製造する際、粘度が高くなりすぎるおそれが生じる。他方、粒径が30μmを超えると、接合材中の金属密度が低下するため、接合強度不足のおそれが生じる。なお、本明細書が開示する接合材は、高融点金属粒子として、Cu、Cu合金、Al、Ag、Auのいずれか1種類の金属のみを含むものであってもよいし、複数種類の金属を含むものであってもよい。高融点金属粒子の表面がSnまたはSn合金でめっきされていてもよい。
低融点金属粒子は、Sn合金であればよいが、Sn−Ag系、Sn−Ag−Cu系、Sn−In−Ag−Bi系、Sn−Zn系、Sn−Zn−Bi系、Sn−Bi系、Sn−In系などの中温系から低温系のはんだ材であることが望ましい。本明細書が開示する接合材は、低融点金属粒子として、1種類のSn合金のみを含むものであってもよいし、複数種類のSn合金を含むものであってもよい。
低融点金属粒子は、Sn合金であり、その粒径が20〜40μmであることが望ましい。粒径が20μm未満であると、高融点金属粒子への濡れ拡がり性が低下し、リフロー後に接合材の表面に現れる高融点金属を覆いきれない可能性が残る。その結果、接合不良のおそれが生じる。粒径が40μmを超えると、接合材を基板に印刷するときの精度が低下するおそれが生じる。
接合材に配合されるフラックス樹脂は、熱硬化性を有するエポキシ樹脂を含んでいるとよい。特に、フラックス樹脂は、エポキシ樹脂、活性剤、ロジン、チキソ剤、溶剤等を均一に混合したものを用いるのが好ましい。また、上記以外に、硬化促進剤、酸化防止剤、粉末表面処理剤、カップリング剤等を含んでいてもよく、これらはフラックス樹脂の樹脂組成に対して0.01−5.0質量%の範囲であることが好ましい。
エポキシ樹脂については、特に制限はないが、例えばビスフェノールA型、ビスフェノールF型、ビフェニル型、ナフタレン型等のものが使用可能である。エポキシ樹脂は、常温で液状のものが好ましい。固形のものを使用する場合は、液状のものと併用することが好ましい。
活性剤は、金属表面に存在する金属酸化物を除去する作用を有するものであれば制限はないが、有機酸、非解離性のハロゲン化化合物からなる非解離型活性剤、アミン系活性剤などが好ましい。有機酸としては、コハク酸、グルタル酸、アジピン酸、ピコリン酸、6−メチルピコリン酸、3−シクロプロピルピコリン酸、5−ブチルピコリン酸、6−シクロブチルピコリン酸、安息香酸、「1,2−アミノドデカン酸」、セバシン酸、ジフェニル酢酸、「3,5−ジブロモサリチル酸」、p−アニス酸などが挙げられる。
非解離性のハロゲン化化合物からなる非解離型活性剤としては、例えば、特開2015−160234号公報に記載されているような、ハロゲン原子が共有結合により結合した非塩系の有機化合物が挙げられる。このハロゲン化化合物としては、塩素化物、臭素化物、フッ化物のように塩素、臭素、フッ素の各単独元素の共有結合による化合物でもよいが、塩素、臭素およびフッ素の任意の2つまたは全部のそれぞれの共有結合を有する化合物でもよい。これらの化合物は、水性溶媒に対する溶解性を向上させるために、例えばハロゲン化アルコールやハロゲン化カルボキシルのように水酸基やカルボキシル基などの極性基を有することが好ましい。ハロゲン化アルコールとしては、例えば、2,3−ジブロモプロパノール/2,3−ジブロモブタンジオール/トランス−2,3−ジブロモ−2−ブテン−1,4−ジオール/1,4−ジブロモ−2−ブタノール/トリブロモネオペンチルアルコールなどの臭素化アルコール/1,3−ジクロロ−2−プロパノール/1,4−ジクロロ−2−ブタノールなどの塩素化アルコール/3−フルオロカテコールなどのフッ素化アルコール/その他これらに類する化合物が挙げられる。ハロゲン化カルボキシルとしては、2−ヨード安息香酸、3−ヨード安息香酸、2−ヨードプロピオン酸、5−ヨードサリチル酸、5−ヨードアントラニル酸などのヨウ化カルボキシル、2−クロロ安息香酸、3−クロロプロピオン酸などの塩化カルボキシル、2,3−ジブロモプロピオン酸、2,3−ジブロモコハク酸、2−ブロモ安息香酸などの臭素化カルボキシル、その他これらに類する化合物が挙げられる。これらの活性剤は、1種類を単独で用いてもよく、あるいは、2種類以上の活性剤を混合して用いてもよい。
アミン系活性剤としては、例えば、特開2015−160234号公報に記載されているような、下記の活性剤が挙げられる。アミン系活性剤としては、アミン類(エチレンジアミンなどのポリアミンなど)、アミン塩類(トリメチロールアミン、シクロヘキシルアミン、ジエチルアミンなどのアミンやアミノアルコールなどの有機酸塩や無機酸塩(塩酸、硫酸、臭化水素酸など))、アミノ酸類(グリシン、アラニン、アスパラギン酸、グルタミン酸、バリンなど)、アミド系化合物などが挙げられる。具体的には、ジフェニルグアニジン臭化水素酸塩、シクロヘキシルアミン臭化水素酸塩、ジエチルアミン塩(塩酸塩、コハク酸塩、アジピン酸塩、セバシン酸塩など)、トリエタノールアミン、モノエタノールアミン、これらのアミンの臭化水素酸塩などが挙げられる。これらの活性剤も、1種類を単独で用いてもよく、あるいは、2種類以上の活性剤を混合して用いてもよい。
活性剤は、フラックス樹脂の組成に対して0.5〜10.0質量%の範囲で混合するのが好ましい。0.5%未満では低融点金属粒子の溶解後の濡れ性が低下し、焼結性が不足する傾向がある。また、10質量%を超えると、フラックス組成物の絶縁性が低下する傾向がある。
ロジンについては、カルボキシル基を有する松脂などの天然ロジン、重合ロジンであれば、特に制限はない。例えば、アビエチン酸、ネオアビエチン酸、パラストリン酸、ピマール酸、イソピマール酸、デヒドロアビエチン酸などの天然ロジンや、アクリル化ロジン、水添ロジン、マレイン化ロジン等の重合ロジンが好ましい。これらのロジンは1種類を単独で用いてもよく、2種類以上を混合して用いてもよい。
溶剤については、比較的に高沸点で水溶性の溶剤を用いることが好ましい。例えば、特開2015−160234号公報に記載された、次の溶剤が挙げられる。そのような溶剤としては、沸点170℃以上の水溶性溶剤を用いることが好ましい。そのような溶剤としては、例えば、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、ヘキシレングリコール、ヘキシルジグリコール、1,5−ペンタンジオール、メチルカルビトール、ブチルカルビトール、2−エチルヘキシルジグリコール(EHDG)、オクタンジオール、フェニルグリコール、ジエチレングリコールモノヘキシルエーテル、テトラエチレングリコールジメチルエーテルが挙げられる。これらの溶剤は1種を単独で用いてもよく、2種以上を混合して用いてもよい。
酸化防止剤については、フラックス中に含まれていてもよく、フェノール系酸化防止剤、硫黄系酸化防止剤などが挙げられる。フェノール系酸化防止剤としては、分子内に置換または無置換のフェノール基を有するフェノール系酸化防止剤であり、ヒンダードフェノール構造またはハーフヒンダードフェノール構造を有するものであってよい。硫黄系酸化防止剤としては、分子内に硫黄およびエステル結合を有するチオエステル系酸化防止剤などが挙げられる。これらの酸化防止剤は、1種類を単独で用いてもよく、2種類以上を混合して用いてもよい。
導電性の接合材のペースト中の金属粒子とフラックス樹脂の割合は、金属の組成および粒径、フラックス樹脂の種類などに適合させて適切な範囲から選択可能であり、ペースト全体(接合材全体)の質量に対して、金属粒子が85〜95質量%が好ましく、88〜93質量%であることが特に好ましい。85質量%未満では、接合材の印刷形状不良や、加熱時のダレ等が発生する。また、95質量%を超えると、フラックス樹脂中に金属粒子が十分に混合しなくなる。
本明細書が開示する接合材を用いて、表面実装用の部品をプリント基板に接合することも好適である。プリント基板の材料としては、紙フェノール系、ガラスエポキシ系、ポリイミド系、ビスマレイミドトリアジン系、液晶ポリマー系、ポリテトラフルオロエチレンおよびポリエーテルエーテルケトン等の熱硬化樹脂系、セラミック系、金属系を使用したものを用いてもよい。表面実装用の部品は、チップ部品、半導体部品、小型実装部品のいずれでもよい。チップ部品の例は、コンデンサ、抵抗、ダイオードなどの電子部品である。半導体部品の例は、QFP(Quad Flat Package)、TSOP(Thin Small Outline Package)、SOP(Small Outline Package)、CSP(Chip Size Package)、BGA(Ball Grid Array)などがある。小型実装部品の例は、アルミ電解コンデンサ、トランジスタ、トリマ、リレー、トランスなどがある。
図3に、本明細書が開示する接合材を用いた部品実装工程の説明図を示す。図3(A)は、回路基板3にペースト状の接合材2の印刷工程を説明する図である。導電性のペースト状の接合材2は、メタルマスクなどを用いて回路基板3の上の銅配線4の上に印刷される。図3(B)は、部品の載置工程を説明する図である。チップ部品5は、電子部品実装機(チップマウンタ)等で、印刷された接合材2の上に実装される。図3(C)は、リフロー工程を説明する図である。図3(C)は、リフロー加熱後の基板を示している。チップ部品5を実装した回路基板3は、リフロー炉などで加熱することで、接合材2が合金化し、全体がペースト状から固化し、実装が完了する。なお、図3(C)では、接合材2が図3(B)の状態から変化し、合金化したことを模式的に表すために、接合材2にハッチングを施してある。
2回のリフローを行って半導体モジュール実装基板や部品内蔵基板などの部品実装を行う場合において、本明細書が開示する接合材を1次リフローに用いると、次の利点が得られる。
(1)従来よりも低温(≦260℃)で部品を実装可能である。
(2)2次リフロー(約260℃)の際に再溶融しない。
(3)環境への負荷が小さい(Pbフリーに対応)。
(4)接合部からウィスカが発生しない。ウィスカが発生しないので、接合後の接合箇所に絶縁樹脂などのコーティング剤を塗布する必要がなくなる。
(1)従来よりも低温(≦260℃)で部品を実装可能である。
(2)2次リフロー(約260℃)の際に再溶融しない。
(3)環境への負荷が小さい(Pbフリーに対応)。
(4)接合部からウィスカが発生しない。ウィスカが発生しないので、接合後の接合箇所に絶縁樹脂などのコーティング剤を塗布する必要がなくなる。
以下、実施例を説明する。配合を変えて9種類の評価サンプルと3種類の比較例を作成し、(1)再溶融するか否か、(2)せん断強度、(3)ウィスカの発生の有無、を評価した。実施方法は以下の通りである。図4、図5に、実施例1−9と比較例1−3の組成と評価結果(特性)を示す。
<フラックス樹脂の調整>(手法は共有)
液状エポキシ樹脂(製品名「jER828」/「jER806」、ビスフェノールA型/F型エポシキ樹脂、三菱化学(株)製)、ロジン(デヒドロアビエチン酸)、活性剤(グルタル酸)、チキソ剤(1,2−ヒドロキシステアリン酸トリグリセリド)、溶剤(ブチルカルビトール)を良く混合し、フラックス樹脂を調整した。
液状エポキシ樹脂(製品名「jER828」/「jER806」、ビスフェノールA型/F型エポシキ樹脂、三菱化学(株)製)、ロジン(デヒドロアビエチン酸)、活性剤(グルタル酸)、チキソ剤(1,2−ヒドロキシステアリン酸トリグリセリド)、溶剤(ブチルカルビトール)を良く混合し、フラックス樹脂を調整した。
<導電性ペースト(接合材)の調整>(手法は共通)
フラックス樹脂と市販の銅粉末(平均粒径10μm)とはんだ粉末(SAC305、平均粒径30μm)とをソフナーで混練し、導電性ペーストの接合材を調整した。SAC305は、合金の組成がSn−3.0Ag−0.5Cuのはんだ材である。
フラックス樹脂と市販の銅粉末(平均粒径10μm)とはんだ粉末(SAC305、平均粒径30μm)とをソフナーで混練し、導電性ペーストの接合材を調整した。SAC305は、合金の組成がSn−3.0Ag−0.5Cuのはんだ材である。
<評価サンプル(実施例と比較例)作成>
表面に銅箔ランドが形成されたガラスエポキシ基板の上に上記した接合材を、0.8mm×1.5mm×100μmのメタルマスクを用いてメタルスキージで印刷した。その後、Snめっきの1005チップを銅箔ランドの印刷膜上に20個搭置した。プリヒート180℃、ピーク温度250℃のリフロー条件でチップ部品を実装し、評価サンプルとした。
表面に銅箔ランドが形成されたガラスエポキシ基板の上に上記した接合材を、0.8mm×1.5mm×100μmのメタルマスクを用いてメタルスキージで印刷した。その後、Snめっきの1005チップを銅箔ランドの印刷膜上に20個搭置した。プリヒート180℃、ピーク温度250℃のリフロー条件でチップ部品を実装し、評価サンプルとした。
<260℃での再溶融評価>
作成した評価サンプルを260℃に設定したはんだ槽に1分間浮かべ、接合部が再溶融したか否かを目視で観察した。
作成した評価サンプルを260℃に設定したはんだ槽に1分間浮かべ、接合部が再溶融したか否かを目視で観察した。
<せん断強度評価>
作成した評価サンプルをシェアテスタ(「万能型ボンドテスター4000」、デイジ・ジャパン(株)製)を用いて、チップ接合部のせん断強度を測定した。
作成した評価サンプルをシェアテスタ(「万能型ボンドテスター4000」、デイジ・ジャパン(株)製)を用いて、チップ接合部のせん断強度を測定した。
<ウィスカの発生評価>
作成した評価サンプルを85℃、85RHの高温高湿条件に200時間投入し、その後常温で24時間放置する。これを5回繰り返した後、顕微鏡でウィスカが発生しているか否かを観察した。上記条件の5回の繰り返しは、高温高湿放置1000時間に相当する。
作成した評価サンプルを85℃、85RHの高温高湿条件に200時間投入し、その後常温で24時間放置する。これを5回繰り返した後、顕微鏡でウィスカが発生しているか否かを観察した。上記条件の5回の繰り返しは、高温高湿放置1000時間に相当する。
実施例1−9と比較例1―3の組成の技術的意味は以下の通りである。
実施例1:標準組成(Cu粒子の含有比率:65Wt%)
実施例2:Cu粒子の質量比の下限(Cu粒子の含有比率:55Wt%)
実施例3:Cu粒子の質量比の上限(Cu粒子の含有比率:75Wt%)
実施例4:Cu粒子に代えてAg粒子を採用
実施例5:Cu粒子の表面にSnめっき有
実施例6:はんだ粉末SAC305と、Sn−Bi粒子の混合組成
実施例7:フラックスの組成比を変更
実施例8:エポキシ樹脂を2種類混合
実施例9:金属とフラックスの混合比を変更
比較例1:Cu粒子含有量過少(Cu粒子の含有比率:50Wt%)
比較例2:Cu粒子含有量過多(Cu粒子の含有比率:80Wt%)
比較例3:エポキシ樹脂無
実施例1:標準組成(Cu粒子の含有比率:65Wt%)
実施例2:Cu粒子の質量比の下限(Cu粒子の含有比率:55Wt%)
実施例3:Cu粒子の質量比の上限(Cu粒子の含有比率:75Wt%)
実施例4:Cu粒子に代えてAg粒子を採用
実施例5:Cu粒子の表面にSnめっき有
実施例6:はんだ粉末SAC305と、Sn−Bi粒子の混合組成
実施例7:フラックスの組成比を変更
実施例8:エポキシ樹脂を2種類混合
実施例9:金属とフラックスの混合比を変更
比較例1:Cu粒子含有量過少(Cu粒子の含有比率:50Wt%)
比較例2:Cu粒子含有量過多(Cu粒子の含有比率:80Wt%)
比較例3:エポキシ樹脂無
評価結果も図4、図5に示してある。図4、図5の結果から、実施例1−9は、260℃での再溶融はなく、ウィスカの発生もなかった。実施例1−9では、せん断強度は14.6〜17.0[N]の良好な強度が得られた。これらの実施例に対して、Cu粒子の組成比が50質量%の比較例1は、Cu粒子の組成比が低いために、リフロー後にはんだ材SAC305(Sn)の残存によるウィスカの発生が見られた。
また、Cu粒子の組成比が80質量%の比較例2は、はんだ材SAC305が不足するため、せん断強度が大幅に低下した。さらに、Cu粒子が比較的に多く、また、フラックス組成中にエポキシ樹脂を含有していない比較例3は、フラックス樹脂が熱硬化しないため、せん断強度の低下がみられた。
高融点金属粒子(Cu粒子)と低融点金属粒子(はんだ材SAC305)の総質量に対する高融点金属粒子(Cu粒子)の質量割合は、55%(実施例2)〜75%(実施例3)で良好な結果が得られている。特に、高融点金属粒子(Cu粒子)の質量割合が65%(実施例1、4−9)〜75%(実施例3)で良好な結果が得られた。
実施例で説明した技術に関する留意点を述べる。上記の記載中に使用した金属記号の意味を以下に記す。Cu:銅、Sn:スズ、Al:アルミニウム、Au:金、Ag:銀、Bi:ビスマス、In:インジウム、Zn:亜鉛である。
以上、本発明の具体例を詳細に説明したが、これらは例示に過ぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成し得るものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
Claims (6)
- 高融点金属粒子と、低融点金属粒子と、熱硬化性を有するフラックス樹脂を含んでいる接合材であり、
前記高融点金属粒子と前記低融点金属粒子の総質量に対する前記高融点金属粒子の質量割合が55〜75%である、接合材。 - 前記高融点金属粒子の前記質量割合が65〜75%である、請求項1に記載の接合材。
- 前記高融点金属粒子は、Cu、Cu合金、Al、Ag、Auのいずれかであり、その粒径が5〜30μmである、請求項1または2に記載の接合材。
- 前記低融点金属粒子は、Sn合金であり、その粒径が20〜40μmである、請求項1から3のいずれか1項に記載の接合材。
- 前記高融点金属粒子の表面がSnまたはSn合金でめっきされている、請求項1から3のいずれか1項に記載の接合材。
- 前記フラックス樹脂は、エポキシ樹脂を含んでいる、請求項1から5のいずれか1項に記載の接合材。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017181702A JP2019055414A (ja) | 2017-09-21 | 2017-09-21 | 接合材 |
CN201811042895.XA CN109530957A (zh) | 2017-09-21 | 2018-09-07 | 接合材料 |
US16/127,464 US20190084093A1 (en) | 2017-09-21 | 2018-09-11 | Bonding material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017181702A JP2019055414A (ja) | 2017-09-21 | 2017-09-21 | 接合材 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019055414A true JP2019055414A (ja) | 2019-04-11 |
Family
ID=65721249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017181702A Pending JP2019055414A (ja) | 2017-09-21 | 2017-09-21 | 接合材 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190084093A1 (ja) |
JP (1) | JP2019055414A (ja) |
CN (1) | CN109530957A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021060126A1 (ja) * | 2019-09-25 | 2021-04-01 | Dowaエレクトロニクス株式会社 | 接合材、接合材の製造方法、接合方法及び半導体装置 |
WO2021066026A1 (ja) * | 2019-09-30 | 2021-04-08 | 昭和電工マテリアルズ株式会社 | 接合用銅ペースト、接合体の製造方法及び接合体 |
JP2021063262A (ja) * | 2019-10-11 | 2021-04-22 | 昭和電工マテリアルズ株式会社 | 接合用金属ペースト、接合体の製造方法、及び接合体 |
WO2024009723A1 (ja) * | 2022-07-05 | 2024-01-11 | パナソニックIpマネジメント株式会社 | 接合材料及び接合構造体 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110961831B (zh) * | 2018-09-28 | 2022-08-19 | 株式会社田村制作所 | 成形软钎料及成形软钎料的制造方法 |
US11581239B2 (en) | 2019-01-18 | 2023-02-14 | Indium Corporation | Lead-free solder paste as thermal interface material |
CN111590234B (zh) * | 2020-06-11 | 2022-06-14 | 中山翰华锡业有限公司 | 一种应用于自动焊接的高熔点环保超细焊锡丝及其制备方法 |
US20220108965A1 (en) * | 2020-10-06 | 2022-04-07 | Jabil Inc. | Low temperature, reworkable, and no-underfill attach process for fine pitch ball grid arrays having solder balls with epoxy and solder material |
JP7014991B1 (ja) | 2021-03-31 | 2022-02-02 | 千住金属工業株式会社 | プリフォームはんだ及びその製造方法、並びにはんだ継手の製造方法 |
US20230241725A1 (en) * | 2022-01-19 | 2023-08-03 | Ning-Cheng Lee | Solder pastes and methods of using the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261105A (ja) * | 2000-06-12 | 2002-09-13 | Hitachi Ltd | 電子機器 |
JP2012174332A (ja) * | 2011-02-17 | 2012-09-10 | Fujitsu Ltd | 導電性接合材料、導体の接合方法、及び半導体装置の製造方法 |
JP2013510220A (ja) * | 2009-11-05 | 2013-03-21 | ドクサンテコピア カンパニーリミテッド | 導電性接着剤とその製造方法及びそれを含む電子装置 |
JP2013220466A (ja) * | 2012-04-19 | 2013-10-28 | Asahi Kasei E-Materials Corp | 熱硬化性樹脂組成物を用いたはんだペースト |
WO2016174584A1 (en) * | 2015-04-28 | 2016-11-03 | Ormet Circuits, Inc. | Sintering pastes with high metal loading for semiconductor die attach applications |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57177551A (en) * | 1981-04-27 | 1982-11-01 | Hitachi Ltd | Semiconductor device and manufacturing method therefor |
JPH0241794A (ja) * | 1988-07-29 | 1990-02-09 | Hitachi Ltd | はんだ合金およびこれを用いた電子回路装置 |
US6054761A (en) * | 1998-12-01 | 2000-04-25 | Fujitsu Limited | Multi-layer circuit substrates and electrical assemblies having conductive composition connectors |
JP3473601B2 (ja) * | 2000-12-26 | 2003-12-08 | 株式会社デンソー | プリント基板およびその製造方法 |
US6458472B1 (en) * | 2001-01-08 | 2002-10-01 | Henkel Loctite Corporation | Fluxing underfill compositions |
TWI436710B (zh) * | 2011-02-09 | 2014-05-01 | Murata Manufacturing Co | Connection structure |
JP6346757B2 (ja) * | 2014-02-27 | 2018-06-20 | 株式会社タムラ製作所 | プリント配線基板の製造方法 |
-
2017
- 2017-09-21 JP JP2017181702A patent/JP2019055414A/ja active Pending
-
2018
- 2018-09-07 CN CN201811042895.XA patent/CN109530957A/zh active Pending
- 2018-09-11 US US16/127,464 patent/US20190084093A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261105A (ja) * | 2000-06-12 | 2002-09-13 | Hitachi Ltd | 電子機器 |
JP2013510220A (ja) * | 2009-11-05 | 2013-03-21 | ドクサンテコピア カンパニーリミテッド | 導電性接着剤とその製造方法及びそれを含む電子装置 |
JP2012174332A (ja) * | 2011-02-17 | 2012-09-10 | Fujitsu Ltd | 導電性接合材料、導体の接合方法、及び半導体装置の製造方法 |
JP2013220466A (ja) * | 2012-04-19 | 2013-10-28 | Asahi Kasei E-Materials Corp | 熱硬化性樹脂組成物を用いたはんだペースト |
WO2016174584A1 (en) * | 2015-04-28 | 2016-11-03 | Ormet Circuits, Inc. | Sintering pastes with high metal loading for semiconductor die attach applications |
JP2018515348A (ja) * | 2015-04-28 | 2018-06-14 | オルメット・サーキッツ・インコーポレイテッド | 半導体ダイ接着用途のための高金属負荷量の焼結ペースト |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021060126A1 (ja) * | 2019-09-25 | 2021-04-01 | Dowaエレクトロニクス株式会社 | 接合材、接合材の製造方法、接合方法及び半導体装置 |
WO2021066026A1 (ja) * | 2019-09-30 | 2021-04-08 | 昭和電工マテリアルズ株式会社 | 接合用銅ペースト、接合体の製造方法及び接合体 |
JP2021063262A (ja) * | 2019-10-11 | 2021-04-22 | 昭和電工マテリアルズ株式会社 | 接合用金属ペースト、接合体の製造方法、及び接合体 |
WO2024009723A1 (ja) * | 2022-07-05 | 2024-01-11 | パナソニックIpマネジメント株式会社 | 接合材料及び接合構造体 |
Also Published As
Publication number | Publication date |
---|---|
US20190084093A1 (en) | 2019-03-21 |
CN109530957A (zh) | 2019-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2019055414A (ja) | 接合材 | |
JP5387732B2 (ja) | 接続対象物の接続方法および電子装置の製造方法 | |
JP5553181B2 (ja) | 無洗浄鉛フリーソルダペースト | |
JP6402213B2 (ja) | はんだ組成物および電子基板 | |
WO2011027659A1 (ja) | ソルダペースト、それを用いた接合方法、および接合構造 | |
JP5722302B2 (ja) | 鉛フリーはんだ合金と、これを用いたソルダペースト及び実装品 | |
CA3068816C (en) | Flux and solder material | |
US10906137B2 (en) | Solder composition and electronic board | |
JP5698447B2 (ja) | はんだ接合剤組成物 | |
JP2017064761A (ja) | フラックス組成物、はんだ組成物および電子基板 | |
JP2008062253A (ja) | はんだ付け用フラックスおよびはんだペースト組成物 | |
JP6402127B2 (ja) | 電子部品の接合方法 | |
JP2018083211A (ja) | ソルダペースト、フラックスおよび電子回路基板 | |
EP4025379A1 (en) | Solder alloy and solder paste containing said alloy | |
JP2020055035A (ja) | はんだ組成物および電子基板 | |
JP2019212577A (ja) | 接合剤 | |
JP2016167561A (ja) | 電子部品の接合方法、並びに、その方法に用いるはんだ組成物および前処理剤 | |
JP5160576B2 (ja) | ソルダペーストと、これを用いたピングリッドアレイパッケージ用基板及びピングリッドアレイパッケージ、並びにピングリッドアレイパッケージ用基板の製造方法 | |
JP2013221143A (ja) | 熱硬化性樹脂組成物及びこれを用いた導電性ペースト | |
JP7133579B2 (ja) | はんだ組成物および電子基板 | |
CN102489899A (zh) | 无铅助焊膏及其制备方法 | |
JP7437677B2 (ja) | はんだ組成物 | |
JP2017087248A (ja) | はんだペースト組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200714 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210329 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210511 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20211102 |