JP3925867B2 - 多孔質層付きシリコン基板を製造する方法 - Google Patents
多孔質層付きシリコン基板を製造する方法 Download PDFInfo
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- JP3925867B2 JP3925867B2 JP2003419064A JP2003419064A JP3925867B2 JP 3925867 B2 JP3925867 B2 JP 3925867B2 JP 2003419064 A JP2003419064 A JP 2003419064A JP 2003419064 A JP2003419064 A JP 2003419064A JP 3925867 B2 JP3925867 B2 JP 3925867B2
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- 239000000758 substrate Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052710 silicon Inorganic materials 0.000 title claims description 22
- 239000010703 silicon Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021426 porous silicon Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000003487 electrochemical reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 description 1
- -1 CF 4 Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
そこで従来、結晶系太陽電池においては、基板の表面をアルカリにより選択エッチングして多数のピラミッドが連なった所謂テクスチャー形状とすることにより、エネルギー変換効率の向上が図られていた。これは、基板表面が平坦である場合と異なり、一旦はピラミッドの斜面で反射した光であっても隣のピラミッドの斜面が受光してそこでの屈折により入射させるという光閉じ込め効果を利用したものである。
それ故、この発明の課題は、多孔質層付きのシリコン基板を安価に且つ環境に悪影響を及ぼすことなく製造する方法を提供することにある。
金属イオンを含有する、酸化剤とフッ化水素酸の混合水溶液に、シリコン基板を浸すことにより、基板の表面に多孔質シリコン層を形成することを特徴とする。
金属イオンとしては、銀、銅、ニッケル、白金、パラジウム及び金のうちから選ばれる1種以上のイオンが挙げられる。この発明の方法によれば、金属イオンを含む液中で金属がシリコン基板表面に析出し、その金属が過酸化水素等の酸化剤の還元触媒として働き、酸化剤がシリコン基板から速やかに電子を受け取る。それによって、基板内に正孔が残る。この正孔が基板材料の酸化及び液中への溶解を促進する。その結果、基板の表面が、直径数nm程度の多数の小さな孔からなる多孔質層とその下に位置する直径数百nm程度の多数の大きな孔からなる多孔質層との二重層となる。
Claims (3)
- 銀、銅、ニッケル、白金、パラジウム及び金のうちから選ばれる1種以上の金属イオンを含有する、酸化剤とフッ化水素酸の混合水溶液に、シリコン基板を浸すことにより、基板の表面に多孔質シリコン層を形成することを特徴とする多孔質層付きシリコン基板の製造方法。
- 前記酸化剤が、過酸化水素、酸素及びオゾンのうちから選ばれる1種以上である請求項1に記載の方法。
- 前記シリコン基板を前記混合水溶液に浸した後、アルカリ水溶液に浸す請求項1に記載の方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003419064A JP3925867B2 (ja) | 2003-12-17 | 2003-12-17 | 多孔質層付きシリコン基板を製造する方法 |
PCT/JP2004/018354 WO2005059985A1 (ja) | 2003-12-17 | 2004-12-09 | 多孔質層付きシリコン基板を製造する方法 |
Applications Claiming Priority (1)
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JP2003419064A JP3925867B2 (ja) | 2003-12-17 | 2003-12-17 | 多孔質層付きシリコン基板を製造する方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005183505A JP2005183505A (ja) | 2005-07-07 |
JP3925867B2 true JP3925867B2 (ja) | 2007-06-06 |
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JP2003419064A Expired - Fee Related JP3925867B2 (ja) | 2003-12-17 | 2003-12-17 | 多孔質層付きシリコン基板を製造する方法 |
Country Status (2)
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JP (1) | JP3925867B2 (ja) |
WO (1) | WO2005059985A1 (ja) |
Cited By (2)
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WO2009054076A1 (ja) | 2007-10-24 | 2009-04-30 | Mitsubishi Electric Corporation | 太陽電池の製造方法 |
WO2012150669A1 (ja) | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | シリコン基板の洗浄方法および太陽電池の製造方法 |
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WO2005117138A1 (ja) * | 2004-05-28 | 2005-12-08 | Sharp Kabushiki Kaisha | 太陽電池用半導体基板とその製造方法および太陽電池 |
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US8815104B2 (en) | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
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US20090236317A1 (en) * | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
WO2011060193A1 (en) | 2009-11-11 | 2011-05-19 | Alliance For Sustainable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
WO2011099216A1 (ja) | 2010-02-15 | 2011-08-18 | Kobayashi Hikaru | 半導体装置の製造方法、半導体装置、並びに転写用部材 |
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JP5724718B2 (ja) * | 2011-07-25 | 2015-05-27 | 株式会社Sumco | 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法 |
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JP5724614B2 (ja) * | 2011-05-17 | 2015-05-27 | 株式会社Sumco | 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法 |
WO2013024746A1 (ja) * | 2011-08-12 | 2013-02-21 | Kobayashi Hikaru | 半導体装置の製造方法、半導体装置の製造装置、半導体装置、半導体装置の製造プログラム、半導体用処理剤、並びに転写用部材 |
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JP2013131723A (ja) * | 2011-12-22 | 2013-07-04 | Mitsubishi Electric Corp | 半導体基板の改質方法 |
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JPS61163286A (ja) * | 1985-01-14 | 1986-07-23 | Mitsubishi Heavy Ind Ltd | 保油性のある摺動面の形成方法 |
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JPH05267270A (ja) * | 1992-03-18 | 1993-10-15 | Takashi Katoda | 多孔質半導体の作成方法及び多孔質半導体基板 |
JP3337735B2 (ja) * | 1993-01-18 | 2002-10-21 | キヤノン株式会社 | 半導体基板の製造方法 |
JPH1154478A (ja) * | 1997-06-05 | 1999-02-26 | Tokai Rika Co Ltd | シリコン基板における陽極化成方法及び表面型の加速度センサの製造方法 |
JP2002252202A (ja) * | 2001-02-27 | 2002-09-06 | Takashi Matsuura | 半導体基材表面への微細構造形成方法およびその方法により微細構造を形成した半導体基材ならびにそれを用いたデバイス |
-
2003
- 2003-12-17 JP JP2003419064A patent/JP3925867B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-09 WO PCT/JP2004/018354 patent/WO2005059985A1/ja active Application Filing
Cited By (4)
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WO2009054076A1 (ja) | 2007-10-24 | 2009-04-30 | Mitsubishi Electric Corporation | 太陽電池の製造方法 |
US8119438B2 (en) | 2007-10-24 | 2012-02-21 | Mitsubishi Electric Corporation | Method of manufacturing solar cell |
WO2012150669A1 (ja) | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | シリコン基板の洗浄方法および太陽電池の製造方法 |
US8865509B2 (en) | 2011-05-02 | 2014-10-21 | Mitsubishi Electric Corporation | Cleaning method of silicon substrate and manufacturing method of solar battery |
Also Published As
Publication number | Publication date |
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WO2005059985A1 (ja) | 2005-06-30 |
JP2005183505A (ja) | 2005-07-07 |
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