JP3925867B2 - Method for manufacturing a silicon substrate with a porous layer - Google Patents
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- JP3925867B2 JP3925867B2 JP2003419064A JP2003419064A JP3925867B2 JP 3925867 B2 JP3925867 B2 JP 3925867B2 JP 2003419064 A JP2003419064 A JP 2003419064A JP 2003419064 A JP2003419064 A JP 2003419064A JP 3925867 B2 JP3925867 B2 JP 3925867B2
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- 239000000758 substrate Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052710 silicon Inorganic materials 0.000 title claims description 22
- 239000010703 silicon Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021426 porous silicon Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000003487 electrochemical reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 description 1
- -1 CF 4 Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
この発明は、多孔質層付きシリコン基板を製造する方法に属し、特にテクスチャー構造の必要な太陽電池用シリコン基板を効率よく形成する方法に関する。 The present invention belongs to a method for producing a silicon substrate with a porous layer, and particularly relates to a method for efficiently forming a silicon substrate for a solar cell that requires a texture structure.
太陽電池においてセルとなるシリコン基板に太陽光が達した場合、基板内部に進入する光と基板表面で反射する光とに分かれる。このうち内部に進入する光のみが光起電力効果に寄与する。
そこで従来、結晶系太陽電池においては、基板の表面をアルカリにより選択エッチングして多数のピラミッドが連なった所謂テクスチャー形状とすることにより、エネルギー変換効率の向上が図られていた。これは、基板表面が平坦である場合と異なり、一旦はピラミッドの斜面で反射した光であっても隣のピラミッドの斜面が受光してそこでの屈折により入射させるという光閉じ込め効果を利用したものである。
When sunlight reaches a silicon substrate that is a cell in a solar battery, light is divided into light that enters the substrate and light that is reflected from the substrate surface. Of these, only light entering the interior contributes to the photovoltaic effect.
Thus, conventionally, in a crystalline solar cell, energy conversion efficiency has been improved by forming a so-called textured shape in which a large number of pyramids are connected by selectively etching the surface of a substrate with alkali. Unlike the case where the substrate surface is flat, even if the light is once reflected by the pyramid slope, it utilizes the light confinement effect that the adjacent pyramid slope receives light and enters it by refraction. is there.
上記のテクスチャー形状を多結晶シリコン基板、非晶質シリコン基板などのように単結晶でないシリコン基板に形成する方法として、機械加工法（特許文献１）および反応性イオンエッチング法（特許文献２）が知られている。また、多孔質シリコンをテクスチャー構造として利用するという技術も提案されている。多孔質シリコンをシリコン基板に作製する方法として、電気化学反応法（特許文献４）、化学エッチング法（特許文献３及び５）などが知られている。電気化学反応法とは、フッ化水素酸水溶液にシリコン基板を浸し、シリコン基板を電極として電気化学反応を起こさせるものである。これにより電極となったシリコン基板の表面のシリコンが溶出して多孔質層が形成される。化学エッチング法とは、硝酸、クロム酸、金属レドックス対等の酸化剤を含むフッ化水素酸水溶液にシリコン基板を浸すことにより、多孔質層を形成する方法である。更にまた近年、金属イオンによる酸化作用を利用した方法（非特許文献１及び２）も提案されている。 As a method of forming the texture shape on a silicon substrate that is not a single crystal such as a polycrystalline silicon substrate or an amorphous silicon substrate, a machining method (Patent Document 1) and a reactive ion etching method (Patent Document 2) are available. Are known. A technique of using porous silicon as a texture structure has also been proposed. As a method for producing porous silicon on a silicon substrate, an electrochemical reaction method (Patent Document 4), a chemical etching method (Patent Documents 3 and 5), and the like are known. In the electrochemical reaction method, a silicon substrate is immersed in an aqueous hydrofluoric acid solution, and an electrochemical reaction is caused using the silicon substrate as an electrode. As a result, silicon on the surface of the silicon substrate serving as an electrode is eluted to form a porous layer. The chemical etching method is a method of forming a porous layer by immersing a silicon substrate in an aqueous hydrofluoric acid solution containing an oxidizing agent such as nitric acid, chromic acid, or a metal redox pair. Furthermore, in recent years, methods using an oxidation action by metal ions (Non-Patent Documents 1 and 2) have also been proposed.
しかし、機械加工法では１枚ずつ切削する必要上、所望の多数の溝を形成するには時間がかかりすぎてコスト高となる。反応性イオンエッチング法は、エッチング室に導入される上記のＳＦ6、ＣＦ4、Ｃｌ2などのガスが腐食性であることから、これらに対して耐える材料で装置を構成しなければならないうえ、一度の処理枚数が少量であるから、結局コスト高となる。多孔質シリコンを利用する方法のうち、電気化学反応法は、電流発生装置の必要があり、コストが高い。化学エッチング法や金属イオンによる酸化作用を利用した方法では、硝酸、クロム酸、金属レドックス対や金属イオンを多量に消費するので、コストが高い。
それ故、この発明の課題は、多孔質層付きのシリコン基板を安価に且つ環境に悪影響を及ぼすことなく製造する方法を提供することにある。
However, in the machining method, it is necessary to cut one sheet at a time, and it takes too much time to form a desired number of grooves, resulting in high costs. In the reactive ion etching method, the gas such as SF 6 , CF 4 , and Cl 2 introduced into the etching chamber is corrosive. Since the number of sheets processed at one time is small, the cost is high. Among the methods using porous silicon, the electrochemical reaction method requires a current generator and is expensive. The chemical etching method and the method using the oxidation action by metal ions are expensive because they consume a large amount of nitric acid, chromic acid, metal redox couples and metal ions.
Therefore, an object of the present invention is to provide a method for producing a silicon substrate with a porous layer at low cost and without adversely affecting the environment.
その課題を解決するために、この発明の多孔質層付きシリコン基板の製造方法は、
金属イオンを含有する、酸化剤とフッ化水素酸の混合水溶液に、シリコン基板を浸すことにより、基板の表面に多孔質シリコン層を形成することを特徴とする。
金属イオンとしては、銀、銅、ニッケル、白金、パラジウム及び金のうちから選ばれる１種以上のイオンが挙げられる。この発明の方法によれば、金属イオンを含む液中で金属がシリコン基板表面に析出し、その金属が過酸化水素等の酸化剤の還元触媒として働き、酸化剤がシリコン基板から速やかに電子を受け取る。それによって、基板内に正孔が残る。この正孔が基板材料の酸化及び液中への溶解を促進する。その結果、基板の表面が、直径数ｎｍ程度の多数の小さな孔からなる多孔質層とその下に位置する直径数百ｎｍ程度の多数の大きな孔からなる多孔質層との二重層となる。
In order to solve the problem, a method for producing a silicon substrate with a porous layer of the present invention includes
A porous silicon layer is formed on the surface of the substrate by immersing the silicon substrate in a mixed aqueous solution of an oxidizing agent and hydrofluoric acid containing metal ions.
Examples of the metal ion include one or more ions selected from silver, copper, nickel, platinum, palladium, and gold. According to the method of the present invention, a metal is deposited on the surface of a silicon substrate in a liquid containing metal ions, the metal acts as a reduction catalyst for an oxidizing agent such as hydrogen peroxide, and the oxidizing agent promptly emits electrons from the silicon substrate. receive. Thereby, holes remain in the substrate. This hole promotes the oxidation and dissolution of the substrate material in the liquid. As a result, the surface of the substrate is a double layer of a porous layer composed of a large number of small holes with a diameter of about several nanometers and a porous layer composed of a large number of large holes with a diameter of about several hundreds of nm located thereunder.
この発明の方法によれば、金属イオンは析出して触媒として機能するだけであるので、少量で足りる。しかも、同じ溶液中に多数の基板を一度に浸すことが可能であるから、量産性に富むし、高価な装置や手間がかからない。従って、安価に多孔質層を形成することができる。また、反応は緩やかに進行するので、多孔質層の厚さを制御しやすい。更に、酸化剤として過酸化水素、酸素あるいはオゾンを用いれば、それらの還元反応による副生物は水だけである（H2O2 + 2H+ + 2e → 2H2O、O2+ 4H+ + 4e → 2H2O、O3+ 2H+ + 2e → H2O+O2）ので、環境を汚染しない。 According to the method of the present invention, metal ions are merely precipitated and function as a catalyst, so that a small amount is sufficient. Moreover, since it is possible to immerse a large number of substrates in the same solution at the same time, the mass productivity is high, and expensive equipment and labor are not required. Therefore, the porous layer can be formed at a low cost. Further, since the reaction proceeds slowly, it is easy to control the thickness of the porous layer. Furthermore, by using hydrogen peroxide, oxygen or ozone as an oxidizing agent, by-products due to their reduction reaction is only water (H 2 O 2 + 2H + + 2e → 2H 2 O, O 2 + 4H + + 4e → 2H 2 O, O 3 + 2H + + 2e → H 2 O + O 2 ), so it does not pollute the environment.
上記の二重層を有する基板は、ガスセンサ、バイオセンサ、低誘電率膜、発光素子または電子放出素子として用いることができる。また、上方の多孔質層を反射防止膜として太陽電池に利用することもできるし、その上方の多孔質層をアルカリ水溶液で溶かすと、直径数百ｎｍ程度の多数の凹凸からなるテクスチャー面となり、いずれにしても太陽電池用基板に適する。 The substrate having the above double layer can be used as a gas sensor, a biosensor, a low dielectric constant film, a light emitting element, or an electron emitting element. Further, the upper porous layer can be used for a solar cell as an antireflection film, and when the upper porous layer is dissolved with an alkaline aqueous solution, it becomes a textured surface consisting of a large number of irregularities with a diameter of about several hundred nm, Anyway, it is suitable for a substrate for a solar cell.
ホウ素ドープされたｐ型多結晶シリコン基板であって、平均厚さ３５０μｍに薄切りされたものを準備した。薄切り時に刃物により損傷を受けた層は、８０℃の６％ＮａＯＨ水溶液に１０分間浸すことにより除去した。比抵抗は０．５〜２Ωｃｍであった。この基板をアセトン中で５分間超音波洗浄した後、純水で洗浄した。次に、１０-4Ｍの過塩素酸銀ＡｇＣｌＯ4を含有する、１０％フッ化水素酸と３０％過酸化水素との１０対１混合水溶液に基板を１０分間浸した。得られた基板の表面を走査型電子顕微鏡で観察した結果を図１に示す。 A boron-doped p-type polycrystalline silicon substrate was prepared which was sliced to an average thickness of 350 μm. The layer damaged by the blade during slicing was removed by immersing in a 6% NaOH aqueous solution at 80 ° C. for 10 minutes. The specific resistance was 0.5-2 Ωcm. The substrate was ultrasonically cleaned in acetone for 5 minutes and then washed with pure water. Next, the substrate was immersed for 10 minutes in a 10: 1 mixed aqueous solution of 10% hydrofluoric acid and 30% hydrogen peroxide containing 10 −4 M silver perchlorate AgClO 4 . The result of having observed the surface of the obtained board | substrate with the scanning electron microscope is shown in FIG.
図１に見られるように、基板の表面には直径数ｎｍ程度の多数の小さな孔からなる多孔質層が形成されていた。得られた基板について、紫外可視分光光度計（UV-2450）と反射スペクトル測定用の積分球を用いて３００ｎｍから８００ｎｍの波長における反射率を測定した。対照として上記混合水溶液に浸していない基板についても同様に測定した。測定結果を図２に示す。図中、実線がこの実施例、破線が対照である。図２に見られるように、多孔質層を形成することにより、形成する前よりも反射率が著しく低下した。 As can be seen in FIG. 1, a porous layer composed of a large number of small holes having a diameter of about several nanometers was formed on the surface of the substrate. About the obtained board | substrate, the reflectance in the wavelength of 300 nm to 800 nm was measured using the ultraviolet-visible spectrophotometer (UV-2450) and the integrating sphere for reflection spectrum measurement. As a control, the same measurement was performed on a substrate not immersed in the above mixed aqueous solution. The measurement results are shown in FIG. In the figure, the solid line is the embodiment, and the broken line is the control. As can be seen in FIG. 2, the reflectance was significantly reduced by forming the porous layer than before the formation.
実施例１で得られた基板を更に純水で洗浄し、１％ＮａＯＨ水溶液に１０分間浸すことにより、上方の多孔質層を除去した。次に、再び純水で洗浄後、３０％硝酸に３０分間浸すことにより表面に残留している銀を取り除いた。こうして得られた基板の表面を走査型電子顕微鏡で観察した結果を図３に示す。 The substrate obtained in Example 1 was further washed with pure water and immersed in a 1% aqueous NaOH solution for 10 minutes to remove the upper porous layer. Next, after washing with pure water again, the silver remaining on the surface was removed by immersing in 30% nitric acid for 30 minutes. The result of observing the surface of the substrate thus obtained with a scanning electron microscope is shown in FIG.
図３に見られるように、基板の表面には直径５００ｎｍ〜１μｍ程度の多数の孔からなる多孔質層が形成されていた。この基板についても実施例１と同様に反射率を測定した。測定結果を図４に示す。比較のために、上記混合水溶液に１０分間浸すことに代えて、イソプロピルアルコールを0.8 mol/L 含有する、８０℃の６％ＮａＯＨ水溶液に１０分間浸した（アルカリエッチング法）以外は、実施例１と同一条件で処理した基板についても反射率を測定した。図中、実線がこの実施例、破線が実施例１で記載した対照、細実線が上記比較例である。図３及び図４に見られるように、上方の多孔質層を除去して下方の多孔質層を露出させることにより、表面にテクスチャー構造が形成されるとともに、アルカリエッチング法による比較例のテクスチャー構造よりも反射率が低下した。 As seen in FIG. 3, a porous layer composed of a large number of pores having a diameter of about 500 nm to 1 μm was formed on the surface of the substrate. The reflectance was also measured for this substrate in the same manner as in Example 1. The measurement results are shown in FIG. For comparison, Example 1 was used except that it was immersed in a 6% NaOH aqueous solution at 80 ° C. containing 0.8 mol / L of isopropyl alcohol for 10 minutes instead of being immersed in the above mixed aqueous solution for 10 minutes (alkali etching method). The reflectance was also measured for the substrate treated under the same conditions as in Example 1. In the figure, the solid line is this example, the broken line is the control described in Example 1, and the thin solid line is the comparative example. As shown in FIGS. 3 and 4, the upper porous layer is removed to expose the lower porous layer, whereby a texture structure is formed on the surface and a texture structure of a comparative example by an alkali etching method is formed. The reflectivity was lower than.
この発明によれば、シリコン基板表面に多孔質層を量産性に適した方法で安価に形成することができるので、各種センサや太陽電池の普及に有益である。 According to the present invention, the porous layer can be formed on the surface of the silicon substrate at a low cost by a method suitable for mass productivity, which is useful for the spread of various sensors and solar cells.
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| WO2009054076A1 (en) | 2007-10-24 | 2009-04-30 | Mitsubishi Electric Corporation | Process for manufacturing solar cell |
| US8119438B2 (en) | 2007-10-24 | 2012-02-21 | Mitsubishi Electric Corporation | Method of manufacturing solar cell |
| WO2012150669A1 (en) | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | Method for cleaning silicon substrate, and method for producing solar cell |
| US8865509B2 (en) | 2011-05-02 | 2014-10-21 | Mitsubishi Electric Corporation | Cleaning method of silicon substrate and manufacturing method of solar battery |
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