JP2019196511A - 板処理装置及び板処理方法 - Google Patents

板処理装置及び板処理方法 Download PDF

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Publication number
JP2019196511A
JP2019196511A JP2018090122A JP2018090122A JP2019196511A JP 2019196511 A JP2019196511 A JP 2019196511A JP 2018090122 A JP2018090122 A JP 2018090122A JP 2018090122 A JP2018090122 A JP 2018090122A JP 2019196511 A JP2019196511 A JP 2019196511A
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JP
Japan
Prior art keywords
mark
plate
processing
work plate
marking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018090122A
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English (en)
Japanese (ja)
Inventor
礒　圭二
Keiji Iso
圭二 礒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP2018090122A priority Critical patent/JP2019196511A/ja
Priority to KR1020190044759A priority patent/KR102554316B1/ko
Priority to TW108113769A priority patent/TWI688487B/zh
Priority to CN201910329477.7A priority patent/CN110453221B/zh
Publication of JP2019196511A publication Critical patent/JP2019196511A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018090122A 2018-05-08 2018-05-08 板処理装置及び板処理方法 Pending JP2019196511A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018090122A JP2019196511A (ja) 2018-05-08 2018-05-08 板処理装置及び板処理方法
KR1020190044759A KR102554316B1 (ko) 2018-05-08 2019-04-17 판처리장치 및 판처리방법
TW108113769A TWI688487B (zh) 2018-05-08 2019-04-19 板處理裝置及板處理方法
CN201910329477.7A CN110453221B (zh) 2018-05-08 2019-04-23 板处理装置及板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018090122A JP2019196511A (ja) 2018-05-08 2018-05-08 板処理装置及び板処理方法

Publications (1)

Publication Number Publication Date
JP2019196511A true JP2019196511A (ja) 2019-11-14

Family

ID=68480610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018090122A Pending JP2019196511A (ja) 2018-05-08 2018-05-08 板処理装置及び板処理方法

Country Status (4)

Country Link
JP (1) JP2019196511A (zh)
KR (1) KR102554316B1 (zh)
CN (1) CN110453221B (zh)
TW (1) TWI688487B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114599149A (zh) * 2022-05-10 2022-06-07 四川英创力电子科技股份有限公司 一种用于hdi板的双面精密打靶的装置及方法

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JP2717707B2 (ja) * 1989-07-14 1998-02-25 株式会社村田製作所 スクリーン印刷方法、印刷版の製造方法及びそれらのための装置
JP2000008184A (ja) * 1998-06-24 2000-01-11 Toppan Printing Co Ltd 多層導電膜のエッチング方法
JP2001052605A (ja) * 1999-08-04 2001-02-23 Toppan Printing Co Ltd 高精細シャドウマスク及びその製造方法
JP2001068843A (ja) * 1999-08-30 2001-03-16 Taiyo Yuden Co Ltd 半田ペースト印刷方法，半田ペースト印刷装置及び半田ペースト印刷用マスク
JP4485667B2 (ja) * 2000-08-21 2010-06-23 パナソニック株式会社 部品実装装置のオフセット測定用基板及び部品実装装置のオフセット測定方法
JP2002322576A (ja) * 2001-04-24 2002-11-08 Toppan Printing Co Ltd シヤドウマスクの製造方法
JP3962713B2 (ja) * 2003-09-30 2007-08-22 キヤノン株式会社 アライメントマークの形成方法、およびデバイスが構成される基板
JP2006272625A (ja) * 2005-03-28 2006-10-12 Fujitsu Hitachi Plasma Display Ltd 印刷位置制御装置
JP5018062B2 (ja) * 2006-12-15 2012-09-05 株式会社日立プラントテクノロジー ハンダボール印刷装置
US8021563B2 (en) * 2007-03-23 2011-09-20 Alpha & Omega Semiconductor, Ltd Etch depth determination for SGT technology
CN100527000C (zh) * 2007-08-31 2009-08-12 上海微电子装备有限公司 对准***和对准标记
JP2009099939A (ja) * 2007-09-25 2009-05-07 Dainippon Screen Mfg Co Ltd アライメントマーク形成装置
JP2010003939A (ja) * 2008-06-23 2010-01-07 Fujitsu Ltd 基板の製造方法、基板の製造装置及び基板
CN102653391B (zh) * 2012-04-19 2015-02-25 苏州含光微纳科技有限公司 一种金属微小结构的加工方法
CN102681360A (zh) * 2012-04-24 2012-09-19 合肥芯硕半导体有限公司 激光成像***中实现电路板两面曝光图形对准的对位方法
JP5906398B2 (ja) * 2013-01-29 2016-04-20 パナソニックＩｐマネジメント株式会社 スクリーン印刷装置及びスクリーン印刷装置におけるマスク位置決め方法
JP5907110B2 (ja) 2013-04-12 2016-04-20 信越化学工業株式会社 スクリーン印刷方法及びスクリーン印刷装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114599149A (zh) * 2022-05-10 2022-06-07 四川英创力电子科技股份有限公司 一种用于hdi板的双面精密打靶的装置及方法

Also Published As

Publication number Publication date
KR20190128556A (ko) 2019-11-18
CN110453221A (zh) 2019-11-15
TW201946790A (zh) 2019-12-16
TWI688487B (zh) 2020-03-21
KR102554316B1 (ko) 2023-07-10
CN110453221B (zh) 2021-08-20

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