JP2019176287A - 定電流回路、半導体装置、電子機器および半導体装置の製造方法 - Google Patents
定電流回路、半導体装置、電子機器および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 7
- 239000012535 impurity Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- G—PHYSICS
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- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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Abstract
Description
図1は第1実施形態である定電流回路の構成を示す回路図である。本実施形態は、第1の導電型をNチャネル、第2の導電型をPチャネルとするものである。
I=(1/2)・μn・Cox・(W/L)・Vthn2 ……(1)
L=4056μm ……(2)
I1
=(1/2)・μn・Cox・(W1/L1)・(VGS1−Vthn)2
=(1/2)・μn・Cox・(W1/L1)・(0V−|Vthp|−Vthn)2
……(3)
I1
=(1/2)・μn・Cox・(W1/L1)・(|Vthn|−|Vthp|)2
……(4)
、加工ルールで決まる最小寸法のW1=0.6μm、電流I1=10nAを上記式(4)に対し、L1について解くと次のようになる。
L1=24[μm] ……(5)
従って、製造ばらつきに起因した式(4)の|Vthn|−|Vthp|のばらつきを少なくし、定電流値のばらつきを低減することができる。
図4は第2実施形態である定電流回路の構成を示す回路図である。本実施形態は、第1の導電型をPチャネル、第2の導電型をNチャネルとするものである。
図4において、第1のトランジスターM21は、導電型がPチャネルであり、かつ、デプレッション型のトランジスターである。第1のトランジスターM21は、ゲートが基準ノードNSに接続され、ドレインが電流出力ノードNDに接続されている。また、この第1のトランジスターM21のドレインおよびソースが形成されたNウェルは高電位電源VDDに接続されている。基準ノードNSは、例えば高電位電源VDD等の定電圧源に接続されている。
以上、第1および第2実施形態について説明したが、他にも実施形態が考えられる。例えば次の通りである。
Claims (6)
- 第1の導電型を有し、ゲートが基準ノードに接続され、ドレインが電流出力ノードに接続されたデプレッション型の第1のトランジスターと、
前記第1の導電型の逆の第2の導電型を有し、ゲートとドレインとが前記基準ノードに接続され、ソースが前記第1のトランジスターのソースに接続されたエンハンスメント型の第2のトランジスターと
を具備することを特徴とする定電流回路。 - 前記第1の導電型がNチャネル、前記第2の導電型がPチャネルであることを特徴とする請求項1に記載の定電流回路。
- 前記第1の導電型がPチャネル、前記第2の導電型がNチャネルであることを特徴とする請求項1に記載の定電流回路。
- 請求項1〜3のいずれか1項に記載の定電流回路を具備することを特徴とする半導体装置。
- 請求項4に記載の半導体装置を具備することを特徴とする電子機器。
- 第1の導電型を有し、ゲートが基準ノードに接続され、ドレインが電流出力ノードに接続されたデプレッション型の第1のトランジスターと、
前記第1の導電型の逆の第2の導電型を有し、ゲートとドレインとが前記基準ノードに接続され、ソースが前記第1のトランジスターのソースに接続されたエンハンスメント型の第2のトランジスターとを具備する定電流回路を含む半導体装置の製造方法であって、
前記第1のトランジスターのチャネルドープ層と前記第2のトランジスターのチャネルドープ層を共通のマスクを使用して共通の工程において形成することを特徴とする製造方法。
Priority Applications (3)
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JP2018061452A JP7106931B2 (ja) | 2018-03-28 | 2018-03-28 | 定電流回路、半導体装置、電子機器および半導体装置の製造方法 |
CN201910227219.8A CN110324016B (zh) | 2018-03-28 | 2019-03-25 | 恒流电路、半导体装置及其制造方法、电子设备 |
US16/365,767 US10635126B2 (en) | 2018-03-28 | 2019-03-27 | Constant current circuit, semiconductor device, electronic apparatus, and method of manufacturing semiconductor device |
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JP2018061452A JP7106931B2 (ja) | 2018-03-28 | 2018-03-28 | 定電流回路、半導体装置、電子機器および半導体装置の製造方法 |
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JP2019176287A true JP2019176287A (ja) | 2019-10-10 |
JP7106931B2 JP7106931B2 (ja) | 2022-07-27 |
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Citations (5)
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JPS5781622A (en) * | 1980-11-07 | 1982-05-21 | Nec Corp | Current source |
JPH06224383A (ja) * | 1993-01-27 | 1994-08-12 | Oki Electric Ind Co Ltd | エッチング方法 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP2010170533A (ja) * | 2008-12-22 | 2010-08-05 | Seiko Instruments Inc | 基準電圧回路及び半導体装置 |
JP2011250287A (ja) * | 2010-05-28 | 2011-12-08 | Asahi Kasei Electronics Co Ltd | オペレイショナル・トランスコンダクタンス・アンプ |
Family Cites Families (14)
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JP2730071B2 (ja) | 1988-08-18 | 1998-03-25 | セイコーエプソン株式会社 | 半導体回路 |
EP0561469A3 (en) * | 1992-03-18 | 1993-10-06 | National Semiconductor Corporation | Enhancement-depletion mode cascode current mirror |
US6005378A (en) * | 1998-03-05 | 1999-12-21 | Impala Linear Corporation | Compact low dropout voltage regulator using enhancement and depletion mode MOS transistors |
JP2001119252A (ja) * | 1999-10-19 | 2001-04-27 | Matsushita Electric Ind Co Ltd | ゲート接地アンプおよびパターン情報読み取り装置およびその駆動方法 |
JP4194637B2 (ja) * | 1999-12-28 | 2008-12-10 | 株式会社リコー | 電界効果トランジスタを用いた電圧発生回路及び基準電圧源回路 |
JP4032608B2 (ja) | 2000-05-11 | 2008-01-16 | 富士電機デバイステクノロジー株式会社 | 基準電圧回路 |
JP4023991B2 (ja) * | 2000-09-14 | 2007-12-19 | 株式会社リコー | 基準電圧発生回路及び電源装置 |
JP4477373B2 (ja) | 2004-02-05 | 2010-06-09 | Necエレクトロニクス株式会社 | 定電流回路 |
TWI334687B (en) * | 2006-10-31 | 2010-12-11 | G Time Electronic Co Ltd | A stable oscillator having a reference voltage independent from the temperature and the voltage source |
JP5078502B2 (ja) * | 2007-08-16 | 2012-11-21 | セイコーインスツル株式会社 | 基準電圧回路 |
CN101552598B (zh) * | 2008-04-03 | 2011-08-03 | 晶豪科技股份有限公司 | 切换式功率晶体管的栅极驱动电路 |
JP5257271B2 (ja) * | 2009-06-26 | 2013-08-07 | ソニー株式会社 | 光電変換装置および光電変換装置の駆動方法、並びに放射線撮像装置および放射線撮像装置の駆動方法 |
US9450568B1 (en) * | 2015-09-25 | 2016-09-20 | Raytheon Company | Bias circuit having second order process variation compensation in a current source topology |
JP7075172B2 (ja) * | 2017-06-01 | 2022-05-25 | エイブリック株式会社 | 基準電圧回路及び半導体装置 |
-
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- 2018-03-28 JP JP2018061452A patent/JP7106931B2/ja active Active
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- 2019-03-25 CN CN201910227219.8A patent/CN110324016B/zh active Active
- 2019-03-27 US US16/365,767 patent/US10635126B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5781622A (en) * | 1980-11-07 | 1982-05-21 | Nec Corp | Current source |
JPH06224383A (ja) * | 1993-01-27 | 1994-08-12 | Oki Electric Ind Co Ltd | エッチング方法 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP2010170533A (ja) * | 2008-12-22 | 2010-08-05 | Seiko Instruments Inc | 基準電圧回路及び半導体装置 |
JP2011250287A (ja) * | 2010-05-28 | 2011-12-08 | Asahi Kasei Electronics Co Ltd | オペレイショナル・トランスコンダクタンス・アンプ |
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US10635126B2 (en) | 2020-04-28 |
CN110324016B (zh) | 2023-06-30 |
US20190302823A1 (en) | 2019-10-03 |
CN110324016A (zh) | 2019-10-11 |
JP7106931B2 (ja) | 2022-07-27 |
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