JP2017173118A - 磁気センサ - Google Patents
磁気センサ Download PDFInfo
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- JP2017173118A JP2017173118A JP2016059004A JP2016059004A JP2017173118A JP 2017173118 A JP2017173118 A JP 2017173118A JP 2016059004 A JP2016059004 A JP 2016059004A JP 2016059004 A JP2016059004 A JP 2016059004A JP 2017173118 A JP2017173118 A JP 2017173118A
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- Prior art keywords
- magnetic
- magnetoresistive element
- magnetic body
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- magnetic sensor
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- 230000004907 flux Effects 0.000 claims abstract description 43
- 239000000696 magnetic material Substances 0.000 claims description 10
- 230000005415 magnetization Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 37
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000005389 magnetism Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 5
- 238000001514 detection method Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1253—Measuring galvano-magnetic properties
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
図1は、本発明の第1の実施形態による磁気センサ10Aの外観を示す略斜視図である。また、図2は磁気センサ10Aの上面図であり、図3は磁気センサ10Aの側面図である。
図7は、本発明の第2の実施形態による磁気センサ10B1の構成を示す上面図である。
20 センサチップ
21 基板
22 絶縁膜
31 第1の磁性体
32 第2の磁性体
41〜45 端子
51〜57 配線
58,59 貫通導体
60 フィードバック回路
61 オペアンプ
62 定電圧源
63 定電流源
64 抵抗
I 帰還電流
L1 第1の配線層
L2 第2の配線層
MR1 第1の磁気抵抗効果素子
MR2 第2の磁気抵抗効果素子
φ1〜φ3 磁束
Claims (10)
- 第1乃至第4の端子と、
前記第1及び第2の端子間に電気的に接続され、第1の方向に延在する第1の磁気抵抗効果素子と、
前記第3及び第4の端子間に電気的に接続され、前記第1の磁気抵抗効果素子に沿って前記第1の方向に延在する第1の磁性体と、を備え、
前記第1の磁気抵抗効果素子は、前記第1の方向と交差する第2の方向における前記第1の磁性体の中心位置に対してオフセットして配置されていることを特徴とする磁気センサ。 - 前記第1の磁気抵抗効果素子は、前記第1及び第2の方向と交差する第3の方向から見て、前記第1の磁性体と重ならない位置に配置されていることを特徴とする請求項1に記載の磁気センサ。
- 前記第1の磁性体の前記第1の方向における長さは、前記第1の磁気抵抗効果素子の前記第1の方向における長さ以上であることを特徴とする請求項1又は2に記載の磁気センサ。
- 第5の端子と、
前記第2及び第5の端子間に電気的に接続され、所定の方向に延在する第2の磁気抵抗効果素子と、
前記第3及び第4の端子間に電気的に接続され、前記第2の磁気抵抗効果素子に沿って前記所定の方向に延在する第2の磁性体と、をさらに備え、
前記第2の磁気抵抗効果素子は、前記所定の方向と交差する方向における前記第2の磁性体の中心位置に対してオフセットして配置されていることを特徴とする請求項1乃至3のいずれか一項に記載の磁気センサ。 - 前記第1の磁気抵抗効果素子はセンサチップの第1の配線層に形成され、前記第1の磁性体は前記センサチップの前記第1の配線層とは異なる第2の配線層に形成されていることを特徴とする請求項1乃至4のいずれか一項に記載の磁気センサ。
- 前記第1の磁性体は、前記第2の配線層に固定された磁性材料からなるブロック体であることを特徴とする請求項1乃至5のいずれか一項に記載の磁気センサ。
- 前記第1の磁性体は、前記第2の配線層に形成された磁性材料からなる薄膜であることを特徴とする請求項1乃至5のいずれか一項に記載の磁気センサ。
- 前記第1の磁性体は、軟磁性材料からなることを特徴とする請求項1乃至7のいずれか一項に記載の磁気センサ。
- 前記第1又は第2の端子に現れる電位に基づいて、前記第3の端子と前記第4の端子との間に帰還電流を流すフィードバック回路をさらに備えることを特徴とする請求項1乃至8のいずれか一項に記載の磁気センサ。
- 磁気抵抗効果素子と、
検出すべき磁束を集め、前記磁気抵抗効果素子の磁化固定方向と平行な方向に前記磁束を誘導する磁性体と、
前記磁気抵抗効果素子の抵抗値に応じて前記磁性体に帰還電流を流すフィードバック回路と、を備えることを特徴とする磁気センサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016059004A JP6724459B2 (ja) | 2016-03-23 | 2016-03-23 | 磁気センサ |
CN201680083885.3A CN108780130B (zh) | 2016-03-23 | 2016-10-20 | 磁传感器 |
DE112016006631.7T DE112016006631B4 (de) | 2016-03-23 | 2016-10-20 | Magnetsensor |
US16/085,706 US11022660B2 (en) | 2016-03-23 | 2016-10-20 | Magnetic sensor including a magnetic member offset from a magnetoresistive effect element |
PCT/JP2016/081108 WO2017163471A1 (ja) | 2016-03-23 | 2016-10-20 | 磁気センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016059004A JP6724459B2 (ja) | 2016-03-23 | 2016-03-23 | 磁気センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017173118A true JP2017173118A (ja) | 2017-09-28 |
JP6724459B2 JP6724459B2 (ja) | 2020-07-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016059004A Active JP6724459B2 (ja) | 2016-03-23 | 2016-03-23 | 磁気センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11022660B2 (ja) |
JP (1) | JP6724459B2 (ja) |
CN (1) | CN108780130B (ja) |
DE (1) | DE112016006631B4 (ja) |
WO (1) | WO2017163471A1 (ja) |
Cited By (1)
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---|---|---|---|---|
JP2021028596A (ja) * | 2019-08-09 | 2021-02-25 | ビフレステック株式会社 | ゼロフラックス型磁気センサ |
Families Citing this family (1)
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JP5382852B2 (ja) * | 2009-02-06 | 2014-01-08 | 株式会社オンチップ・バイオテクノロジーズ | 使い捨てチップ型フローセルとそれを用いたフローサイトメーター |
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- 2016-10-20 US US16/085,706 patent/US11022660B2/en active Active
- 2016-10-20 DE DE112016006631.7T patent/DE112016006631B4/de active Active
- 2016-10-20 CN CN201680083885.3A patent/CN108780130B/zh active Active
- 2016-10-20 WO PCT/JP2016/081108 patent/WO2017163471A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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DE112016006631B4 (de) | 2024-02-01 |
US20200300936A1 (en) | 2020-09-24 |
CN108780130B (zh) | 2020-09-15 |
CN108780130A (zh) | 2018-11-09 |
WO2017163471A1 (ja) | 2017-09-28 |
DE112016006631T5 (de) | 2018-12-06 |
US11022660B2 (en) | 2021-06-01 |
JP6724459B2 (ja) | 2020-07-15 |
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