JP2014072296A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014072296A JP2014072296A JP2012215970A JP2012215970A JP2014072296A JP 2014072296 A JP2014072296 A JP 2014072296A JP 2012215970 A JP2012215970 A JP 2012215970A JP 2012215970 A JP2012215970 A JP 2012215970A JP 2014072296 A JP2014072296 A JP 2014072296A
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Abstract
【解決手段】 第1半導体層および第1絶縁体層を貫通して第1導電体層と第2導電体層とを接続する導電部材をさらに備え、導電部材は、第1半導体層に対する拡散係数が、第1半導体層に対する酸素の拡散係数よりも大きい金属を含有する第1領域を有し、金属とは異なる材料を含有する第2領域が、少なくとも第1領域と第1半導体層との間および第1領域と第1絶縁体層との間に位置しており、材料に対する金属の拡散係数が、第1半導体層に対する金属の拡散係数および第1絶縁体層に対する金属の拡散係数よりも低い。
【選択図】 図2
Description
特許文献1には、部品に相当する半導体基板(31、45)同士の電気的接続を得るための導電部材として、基板間配線(68)を設けることが記載されている。
本実施形態の半導体装置の一例としての光電変換装置を、図1を用いて説明する。図1(a)は半導体装置の主要部である半導体デバイス1の斜視図である。図1(b)、(c)は半導体デバイス1の一例の分解斜視図である。図1(d)は半導体デバイス1を含む半導体装置3を備える電子機器5の模式図である。
本実施形態は、拡散バリア領域682が、導電層と絶縁層とで構成された形態である。このような場合の製造方法を説明する。
本実施形態は、第1配線部31と第2配線部51との間に第1素子部30が位置する形態である。第2貫通部66が第1半導体層33および絶縁体層39eを貫通しており、第1貫通部65は絶縁体層39eを貫通しているものの第1半導体層33を貫通していない。
30 第1素子部
31 第1配線部
20 第2部分
50 第2素子部
51 第2配線部
681 易拡散性金属領域
682 拡散バリア領域
65 第1貫通部
66 第2貫通部
67 連結部
68 導電部材
Claims (15)
- 第1半導体層を含む第1素子部と、
第1導電体層および前記第1半導体層と前記第1導電体層との間に位置する第1絶縁体層を含む第1配線部と、
第2半導体層を含む第2素子部と、
第2導電体層および前記第2半導体層と前記第2導電体層との間に位置する第2絶縁体層を含む第2配線部と、を備え、
前記第2配線部が、前記第1素子部と前記第2素子部の間であって、前記第1配線部と前記第2素子部の間に位置する半導体装置であって、
前記第1半導体層および前記第1絶縁体層を貫通して前記第1導電体層と前記第2導電体層とを接続する導電部材をさらに備え、
前記導電部材は、前記第1半導体層に対する拡散係数が、前記第1半導体層に対する酸素の拡散係数よりも大きい金属を含有する第1領域を有し、
前記金属とは異なる材料を含有する第2領域が、少なくとも前記第1領域と前記第1半導体層との間および前記第1領域と前記第1絶縁体層との間に位置しており、
前記材料に対する前記金属の拡散係数が、前記第1半導体層に対する前記金属の前記拡散係数および前記第1絶縁体層に対する前記金属の拡散係数よりも低いことを特徴とする半導体装置。 - 前記第2領域は前記第1導電体層および前記第2導電体層の少なくとも一方に接触する請求項1に記載の半導体装置。
- 前記第2領域は前記第1導電体層および前記第2導電体層の少なくとも一方と前記第1領域との間に位置する請求項1または2に記載の半導体装置。
- 前記導電部材は前記第1導電体層と前記第2導電体層との間に位置する第3絶縁体層を貫通し、前記第2領域は前記第1領域と前記第3絶縁体層との間に位置する請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記導電部材は、前記第1半導体層を貫通し前記第1導電体層に接触する第1貫通部と、前記第1半導体層を貫通し前記第2導電体層に接触する第2貫通部とを有し、前記第1貫通部および前記第2貫通部の各々が前記第1領域および前記第2領域を有する請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第1貫通部と前記第2貫通部とを連結する連結部とを有し、前記連結部が前記第1領域および前記第2領域を有する請求項5に記載の半導体装置。
- 前記第1配線部は、前記第1絶縁体層よりも厚みが小さく、前記第1絶縁体層とは異なる絶縁体からなる絶縁体層を有する請求項1乃至6のいずれか1項に記載の半導体装置。
- 前記第2領域は、前記導電部材の一部を成す導電層と、前記導電層と前記第1半導体層の間に位置する絶縁層とを含む、請求項1乃至7のいずれか1項に記載の半導体装置。
- 前記第2領域と前記第1半導体層との間に絶縁体の領域が設けられている、または、前記第1半導体層に前記導電部材を囲む気体または真空の領域が設けられている請求項1乃至8のいずれか1項に記載の半導体装置。
- 前記第1導電体層および前記第2導電体層の少なくとも一方はアルミニウム層である請求項1乃至9のいずれか1項に記載の半導体装置。
- 前記金属は、金、銀および銅の少なくともいずれかであり、前記材料は、タンタル、窒化タンタル、炭化タンタル、チタン、窒化チタン、炭化チタン、タングステン、窒化タングステン、炭化タングステン、マンガン、窒化シリコン、炭化シリコンの少なくともいずれかであり、前記第1半導体層はシリコン層であり、前記第1絶縁体層は酸化シリコン層である請求項1乃至10のいずれか1項に記載の半導体装置。
- 前記第2領域は前記導電部材の一部を成す導電層を有し、前記第1配線部は、前記金属と原子番号が同じ金属を含有し、バリアメタルを有するビアプラグが設けられた配線を有し、前記バリアメタルの厚みをT1、前記ビアプラグと同じ高さにおける前記導電層の厚みをT0として、T1<T0である請求項1乃至11のいずれか1項に記載の半導体装置。
- 前記第2領域は前記導電部材の一部を成す導電層を有し、前記第1配線部は、前記金属と原子番号が同じ金属を含有し、バリアメタルを有するビアプラグが設けられた配線を有し、前記ビアプラグの幅をD1、前記バリアメタルの厚みをT1、前記ビアプラグと同じ高さにおける前記導電部材の幅をD0、前記ビアプラグと同じ高さにおける前記導電層の厚みをT0として、T0/D0<T1/D1である請求項1乃至11のいずれか1項に記載の半導体装置。
- 前記第2領域は前記導電部材の一部を成す導電層を有し、前記第1配線部に設けられたコンタクトプラグの幅をD1C、前記第2配線部に設けられたコンタクトプラグの幅をD2C、前記配線部に設けられた前記コンタクトプラグと同じ高さにおける前記導電層の厚みをTCとして、TC<D1CかつD2C<D1Cである請求項1乃至11のいずれか1項に記載の半導体装置。
- 前記第1半導体層には光電変換素子が設けられている請求項1乃至14のいずれか1項に記載の半導体装置。
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US20160284755A1 (en) | 2016-09-29 |
US10229948B2 (en) | 2019-03-12 |
US20140091414A1 (en) | 2014-04-03 |
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US10998368B2 (en) | 2021-05-04 |
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