JP2012144421A - グラフェン配線構造 - Google Patents
グラフェン配線構造 Download PDFInfo
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- JP2012144421A JP2012144421A JP2011163193A JP2011163193A JP2012144421A JP 2012144421 A JP2012144421 A JP 2012144421A JP 2011163193 A JP2011163193 A JP 2011163193A JP 2011163193 A JP2011163193 A JP 2011163193A JP 2012144421 A JP2012144421 A JP 2012144421A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 255
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 234
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
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- 239000011347 resin Substances 0.000 claims abstract description 77
- 229920005989 resin Polymers 0.000 claims abstract description 77
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- 238000000034 method Methods 0.000 description 15
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
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- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
Abstract
【解決手段】グラフェン配線構造10は、絶縁樹脂層12,22,32,42とグラフェン層16,26,36とが繰り返し積層されている。グラフェン層16の上下には絶縁樹脂層12,22が存在し、グラフェン層26の上下には絶縁樹脂層22,32が存在し、グラフェン層36の上下には絶縁樹脂層32,42が存在する。また、絶縁樹脂層12とグラフェン層16との間には触媒金属層14が介在し、絶縁樹脂層22とグラフェン層26との間には触媒金属層24が介在し、絶縁樹脂層32とグラフェン層36との間には触媒金属層34が介在する。触媒金属層14,24,34は、グラフェン化を促進する機能を有する。各グラフェン層16,26,36は、いずれも奇数枚(ここでは3枚)のグラフェンシートを積層したものである。
【選択図】図2
Description
図1はグラフェン配線構造10の斜視図、図2は図1のA−A断面図である。
図5はグラフェン配線構造60の斜視図、図6は図5のB−B断面図である。
上述した第1実施形態では、グラフェン配線構造10の両端に電極を形成するにあたり、グラフェン配線構造10の絶縁樹脂層12,22,32,42の両端を除去し、グラフェン層16,26,36及び触媒金属層14,24,34を露出させ、その露出した部分を金属で被覆したが、図3に示す製造工程図の絶縁樹脂層12の代わりに、金属部分12a,12bを有する絶縁樹脂層12を使用してもよい。この場合、他の絶縁樹脂層22,32,42も同様の構成とする。こうすれば、絶縁樹脂層42を形成した時点で、図4に示す両端に電極を有するグラフェン配線構造10が得られる。
Claims (3)
- 絶縁樹脂層とグラフェン層とが繰り返し積層され、各グラフェン層の上下には前記絶縁樹脂層が存在する、グラフェン配線構造。
- 前記絶縁樹脂層と前記グラフェン層との間には、グラフェン化を促進する機能を有する触媒金属層が介在する、請求項1に記載のグラフェン配線構造。
- 各グラフェン層は、いずれも奇数枚のグラフェンシートを積層したものであるか、又は、いずれも偶数枚のグラフェンシートを積層したものである、
請求項1又は2に記載のグラフェン配線構造。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011163193A JP5783530B2 (ja) | 2010-12-21 | 2011-07-26 | グラフェン配線構造 |
PCT/JP2012/065131 WO2012173145A1 (ja) | 2011-06-14 | 2012-06-13 | グラフェン素材の製造方法、グラフェン素材及びグラフェン配線構造 |
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JP2010284762 | 2010-12-21 | ||
JP2010284762 | 2010-12-21 | ||
JP2011163193A JP5783530B2 (ja) | 2010-12-21 | 2011-07-26 | グラフェン配線構造 |
Publications (2)
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JP2012144421A true JP2012144421A (ja) | 2012-08-02 |
JP5783530B2 JP5783530B2 (ja) | 2015-09-24 |
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JP2011029429A Withdrawn JP2012144415A (ja) | 2010-12-21 | 2011-02-15 | グラフェン素材の製造方法及びグラフェン素材 |
JP2011131743A Active JP5783526B2 (ja) | 2010-12-21 | 2011-06-14 | グラフェン素材の製造方法及びグラフェン素材 |
JP2011149418A Active JP5783529B2 (ja) | 2010-12-21 | 2011-07-05 | グラフェン素材の製造方法 |
JP2011163193A Active JP5783530B2 (ja) | 2010-12-21 | 2011-07-26 | グラフェン配線構造 |
JP2012549828A Active JP5688775B2 (ja) | 2010-12-21 | 2011-12-20 | グラフェン素材の製造方法 |
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JP2011029429A Withdrawn JP2012144415A (ja) | 2010-12-21 | 2011-02-15 | グラフェン素材の製造方法及びグラフェン素材 |
JP2011131743A Active JP5783526B2 (ja) | 2010-12-21 | 2011-06-14 | グラフェン素材の製造方法及びグラフェン素材 |
JP2011149418A Active JP5783529B2 (ja) | 2010-12-21 | 2011-07-05 | グラフェン素材の製造方法 |
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WO (2) | WO2012086233A1 (ja) |
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WO2013129312A1 (ja) * | 2012-02-27 | 2013-09-06 | 学校法人 名城大学 | 触媒金属層の製造方法及びグラフェン素材の製造方法 |
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JP5763597B2 (ja) * | 2012-07-23 | 2015-08-12 | 日本電信電話株式会社 | グラフェンの製造方法 |
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JP2012144419A (ja) | 2012-08-02 |
WO2012086641A1 (ja) | 2012-06-28 |
JP5783529B2 (ja) | 2015-09-24 |
JP2012144420A (ja) | 2012-08-02 |
JP5688775B2 (ja) | 2015-03-25 |
JP2012144415A (ja) | 2012-08-02 |
JPWO2012086641A1 (ja) | 2014-05-22 |
JP5783526B2 (ja) | 2015-09-24 |
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