JP5783526B2 - グラフェン素材の製造方法及びグラフェン素材 - Google Patents
グラフェン素材の製造方法及びグラフェン素材 Download PDFInfo
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y40/00—Manufacture or treatment of nanostructures
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
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- H01L21/02104—Forming layers
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Description
(a)グラフェン化を促進する機能を有する所定形状の触媒金属層を基板本体上に形成する工程と、
(b)前記触媒金属層の表面に炭素源を供給してグラフェンを成長させる工程と、
(c)前記触媒金属層から前記グラフェンをグラフェン素材として取り出す工程と、
を含み、
前記工程(c)で前記グラフェンをグラフェン素材として取り出す前又は後に、下地をなすTi層とMo,Ni,Ta及びWからなる群より選ばれた金属を主成分とする保護層とをこの順で積層した構造を持つ電極端子を形成するものである。
Claims (7)
- (a)グラフェン化を促進する機能を有する所定形状の触媒金属層を基板本体上に形成する工程と、
(b)前記触媒金属層の表面に炭素源を供給してグラフェンを成長させる工程と、
(c)前記触媒金属層から前記グラフェンをグラフェン素材として取り出す工程と、
を含み、
前記工程(c)で前記グラフェンをグラフェン素材として取り出す前又は後に、下地をなすTi層とMo,Ni,Ta及びWからなる群より選ばれた金属を主成分とする保護層とをこの順で積層した構造を持つ電極端子を形成する、
グラフェン素材の製造方法。 - 前記工程(a)では、前記触媒金属層として一筆書きが可能な形状のものを形成する、請求項1に記載のグラフェン素材の製造方法。
- 前記工程(a)では、前記一筆書きが可能な形状はジグザグ状、渦巻き状又は螺旋状である、請求項2に記載のグラフェン素材の製造方法。
- 前記工程(c)では、前記触媒金属層からジグザグ状、渦巻き状又は螺旋状のグラフェンを取り出したあと両端を把持して伸ばすことにより線状のグラフェン素材を得る、請求項2又は3に記載のグラフェン素材の製造方法。
- 前記工程(c)では、前記触媒金属層から前記グラフェン素材として取り出すにあたり、前記触媒金属層を溶かして前記グラフェン素材を取り出すか、又は、前記触媒金属層から前記グラフェン素材を引き剥がす、請求項1〜4のいずれか1項に記載のグラフェン素材の製造方法。
- 前記電極端子として、前記Ti層と前記保護層とAu又はSnからなる表層とをこの順で積層した構造を持つものを形成する、
請求項1〜5のいずれか1項に記載のグラフェン素材の製造方法。 - ジグザグ状、渦巻き状又は螺旋状の自立したグラフェン素材であって、
両端に、下地をなすTi層とMo,Ni,Ta及びWからなる群より選ばれた金属を主成分とする保護層とをこの順で積層した構造を持つ電極端子を有する、
グラフェン素材。
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PCT/JP2012/065131 WO2012173145A1 (ja) | 2011-06-14 | 2012-06-13 | グラフェン素材の製造方法、グラフェン素材及びグラフェン配線構造 |
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JP2011131743A Active JP5783526B2 (ja) | 2010-12-21 | 2011-06-14 | グラフェン素材の製造方法及びグラフェン素材 |
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JP5727017B2 (ja) * | 2010-09-16 | 2015-06-03 | グラフェンシック・エービーGraphensic AB | グラフェンの成長のための方法 |
KR101271951B1 (ko) * | 2011-05-27 | 2013-06-07 | 포항공과대학교 산학협력단 | 탄소 박막 제조 방법 |
WO2013129312A1 (ja) * | 2012-02-27 | 2013-09-06 | 学校法人 名城大学 | 触媒金属層の製造方法及びグラフェン素材の製造方法 |
CN103378247B (zh) | 2012-04-25 | 2016-12-14 | 清华大学 | 外延结构体 |
JP5763597B2 (ja) * | 2012-07-23 | 2015-08-12 | 日本電信電話株式会社 | グラフェンの製造方法 |
JP6074270B2 (ja) * | 2013-01-15 | 2017-02-01 | 東京エレクトロン株式会社 | グラフェンのパターニング方法、及びパターンニング用部材 |
US11033862B2 (en) | 2013-05-01 | 2021-06-15 | Koninklijke Philips N.V. | Method of manufacturing partially freestanding two-dimensional crystal film and device comprising such a film |
JP2015024937A (ja) * | 2013-07-26 | 2015-02-05 | 住友電気工業株式会社 | グラファイト膜の製造方法およびグラファイト構造体 |
JP2015040156A (ja) * | 2013-08-23 | 2015-03-02 | 日本電信電話株式会社 | グラフェン形成方法および形成装置 |
CN103738939B (zh) * | 2013-10-21 | 2016-04-13 | 华中科技大学 | 一种石墨烯快速剥离的方法 |
CN105206318A (zh) * | 2014-06-24 | 2015-12-30 | 美特科技(苏州)有限公司 | 一种锦丝线 |
JP6339976B2 (ja) * | 2015-07-13 | 2018-06-06 | 日本電信電話株式会社 | 炭素微小電極の製造方法 |
KR101850107B1 (ko) * | 2016-05-30 | 2018-04-20 | 주식회사 엔젤 | 전자석 및 그 제조방법 |
JP6748033B2 (ja) * | 2017-06-08 | 2020-08-26 | 日本電信電話株式会社 | カーボンチューブの製造方法 |
CN110745815B (zh) * | 2018-07-24 | 2022-08-16 | 南开大学 | 制备石墨烯-金属复合线材的方法 |
US11694895B2 (en) * | 2019-02-14 | 2023-07-04 | The Government of the United States of America, as represented by the Secretarv of the Navy | Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film |
CN110152705B (zh) * | 2019-05-06 | 2021-11-23 | 杭州电子科技大学 | 一种TaON@Ni@石墨烯三元异质结光催化材料的制备方法 |
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CN101449374B (zh) * | 2006-06-08 | 2011-11-09 | 国际商业机器公司 | 高热传导性柔软片及其制造方法 |
JP2009070911A (ja) * | 2007-09-11 | 2009-04-02 | Fujitsu Ltd | 配線構造体、半導体装置および配線構造体の製造方法 |
JP5470610B2 (ja) * | 2007-10-04 | 2014-04-16 | 国立大学法人福井大学 | グラフェンシートの製造方法 |
KR100923304B1 (ko) * | 2007-10-29 | 2009-10-23 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
KR101344493B1 (ko) * | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
JP5353009B2 (ja) * | 2008-01-08 | 2013-11-27 | 富士通株式会社 | 半導体装置の製造方法および半導体装置 |
JP5403644B2 (ja) * | 2008-01-25 | 2014-01-29 | ニッタ株式会社 | カーボンファイバ製造方法 |
JP5303957B2 (ja) * | 2008-02-20 | 2013-10-02 | 株式会社デンソー | グラフェン基板及びその製造方法 |
WO2009119641A1 (ja) * | 2008-03-26 | 2009-10-01 | 学校法人早稲田大学 | 単原子膜の製造方法 |
FR2937343B1 (fr) * | 2008-10-17 | 2011-09-02 | Ecole Polytech | Procede de croissance controlee de film de graphene |
JP4970619B2 (ja) * | 2009-03-27 | 2012-07-11 | 独立行政法人科学技術振興機構 | グラフェン膜の製造方法、電子素子の製造方法および基板へのグラフェン膜の転写方法 |
JP2011213090A (ja) * | 2009-09-29 | 2011-10-27 | Sekisui Chem Co Ltd | 樹脂積層板 |
JP5708493B2 (ja) * | 2009-11-13 | 2015-04-30 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR20120058127A (ko) * | 2010-11-29 | 2012-06-07 | 삼성전기주식회사 | 다층 배선기판용 절연 수지 조성물 및 이를 포함하는 다층 배선기판 |
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