JP2009542560A - III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 - Google Patents
III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 Download PDFInfo
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- JP2009542560A JP2009542560A JP2008558549A JP2008558549A JP2009542560A JP 2009542560 A JP2009542560 A JP 2009542560A JP 2008558549 A JP2008558549 A JP 2008558549A JP 2008558549 A JP2008558549 A JP 2008558549A JP 2009542560 A JP2009542560 A JP 2009542560A
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Abstract
Description
Claims (25)
- 基板の複数の部分を露出させるパターン化された複数の開口を有する選択成長マスクを基板上に形成する工程、
パターン化された各開口に露出された基板の複数の部分の各々において半導体材料を成長させるために選択非パルス状成長モードを使用する工程、
非パルス状成長モードからパルス状成長モードへの成長モードの転換を行う工程、及び
半導体材料のパルス状成長モードを継続することにより複数の半導体ナノワイヤーを形成する工程、を有するナノワイヤーの製造方法。 - 基板が、支持用基板面上に緩衝層を備え、そして半導体材料が緩衝層のパターン化された複数の開口を通って選択的に成長する請求項1記載の方法。
- 基板が、Si、SiC、サファイア、GaN及びGaAsよりなるグループから選定された1種又はそれ以上の材料からなる請求項1又は2記載の方法。
- 半導体材料の選択非パルス状成長より前に1回又はそれ以上の洗浄工程を更に有する請求項1又は2記載の方法。
- パターン化された複数の開口が、約10nmから約1000nmの直径及び約50nmから約10μmのピッチを有する六角形のアレイを形成する請求項1又は2記載の方法。
- 複数の半導体ナノワイヤーの各々とパターン化された複数の開口の各々との断面の特徴が実質的に同様である請求項1又は2記載の方法。
- 断面の特徴が、多角形、長方形、正方形、長円形、及び円形よりなるグループから選定された形状である請求項6記載の方法。
- 半導体材料の成長が選択成長マスクの頂部の上に突き出す前に、非パルス状成長モードからパルス状成長モードへの成長モードの転換を行う工程が行われる請求項6記載の方法。
- 複数の半導体ナノワイヤー用の半導体材料が、GaN、AlN、InN、InGaN、AlInGaN及びAlGaNよりなるグループから選定された1種又はそれ以上の材料よりなる請求項1又は2記載の方法。
- 選択成長が、約100から約500の範囲のIII族/V族の比を有するIII族及びV族の前駆物質ガスを有する請求項1又は2記載の方法。
- パルス状成長が、成長反応装置炉にIII族及びV族の半導体材料の前駆物質ガスを、1個又はそれ以上のシーケンスループで交互に導入することを有し、この際に、前駆物質ガスが約60から約300の範囲のIII族/V族の比を有する請求項1又は2記載の方法。
- パルス状成長が、約2μm/hr又はそれ以上の垂直方向成長速度を有する請求項1又は2記載の方法。
- 複数のナノワイヤーの各々が約10nmから約100μmの長さを有する請求項1又は2記載の方法。
- 選択成長マスクの表面に部分的に配置された複数の截頭ピラミッド状のナノ構造を形成するために、半導体材料の成長が選択成長マスクの頂部上に突き出た後で、非パルス状成長モードからパルス化成長モードへの転換の工程が行われ;更に
複数のナノワイヤーを形成する工程が、半導体ナノワイヤーの断面の特徴と複数のピラミッド状ナノ構造の各の頂部の面の特徴とが実質的に同様であるように半導体材料のパルス状成長を継続することにより、複数のピラミッド状ナノ構造の各々に半導体ナノワイヤーを形成することを有する
請求項1又は2記載の方法。 - 半導体ナノワイヤーが、パターン化された複数の開口の各々より小さい断面寸法を有する請求項14記載の方法。
- 多数の選定された表面領域を備えた支持体と、支持体の複数の選定された表面領域の各々に連結されかつこれから伸びているIII族窒化物ナノワイヤーとを有し、III族窒化物ナノワイヤーが単一の方向に沿って指向され、かつ複数の選定された表面領域の一つの断面の特徴を維持している、請求項1又は2記載の方法により形成されたIII族窒化物ナノワイヤーアレイ。
- (0001)結晶軸方向に沿って指向されたGaNナノワイヤーを更に有する請求項16記載のナノワイヤーアレイ。
- III族窒化物ナノワイヤーが、GaN、AlN、InN、InGaN、AlGaN、及びAlInGaNよりなるグループから選定された1種又はそれ以上の材料よりなる請求項16記載のナノワイヤーアレイ。
- III族窒化物ナノワイヤーが、多角形、長方形、正方形、長円形、及び円形よりなるグループから選定された1種又はそれ以上の断面形状を有する請求項16記載のナノワイヤーアレイ。
- III族窒化物ナノワイヤーが、約100又はそれ以上のアスペクト比及び約250nm又はそれ以下の断面寸法を更に有する請求項16記載のナノワイヤーアレイ。
- 支持体が、基板上に配置された選択成長マスクを通して基板の複数の部分の各々に配置されたIII族窒化物ナノワイヤーの核を有し、III族窒化物ナノワイヤーの核の表面が支持体の複数の選定された表面領域の一つを有する請求項16記載のナノワイヤーアレイ。
- 支持体が、III族窒化物ナノワイヤーの核から形成されかつ選択成長マスク上に部分的に配置されたピラミッド状のIII族窒化物ナノ構造を更に有し、ピラミッド状のIII族窒化物ナノ構造の頂部の面が支持体の複数の選定された表面領域の一つを有する請求項21記載のナノワイヤーアレイ。
- 基板、
基板の複数の部分を露出させるパターン化された複数の開口を有する前記基板上の選択成長マスク、及び
基板の多数の部分の各に連結されかつこれから伸びているIII族窒化物ナノワイヤーを有し、前記III族窒化物ナノワイヤーは、単一の方向に沿って指向されかつ多数の選定された表面領域の一つの断面の特徴を維持し、更に選択成長マスクの頂部の上に伸びているIII族窒化物ナノワイヤーアレイ。 - 複数のGaNナノワイヤーの各々が無欠陥である複数のGaNナノワイヤーを有する請求項1又は2記載の方法により形成されるナノワイヤーアレイ、及び
複数のGaNナノワイヤーから合体され約107/cm−2又はこれ以下の欠陥密度を有するGaN薄膜
を有するGaN基板構造。 - 請求項1又は2の方法により形成された多数のナノワイヤーを有する基板。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78083306P | 2006-03-10 | 2006-03-10 | |
US60/780,833 | 2006-03-10 | ||
US79833706P | 2006-05-08 | 2006-05-08 | |
US60/798,337 | 2006-05-08 | ||
US80815306P | 2006-05-25 | 2006-05-25 | |
US60/808,153 | 2006-05-25 | ||
US88936307P | 2007-02-12 | 2007-02-12 | |
US60/889,363 | 2007-02-12 | ||
PCT/US2007/063673 WO2008048704A2 (en) | 2006-03-10 | 2007-03-09 | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
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Families Citing this family (275)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7713352B2 (en) * | 2001-06-29 | 2010-05-11 | University Of Louisville Research Foundation, Inc. | Synthesis of fibers of inorganic materials using low-melting metals |
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US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
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US7192849B2 (en) * | 2003-05-07 | 2007-03-20 | Sensor Electronic Technology, Inc. | Methods of growing nitride-based film using varying pulses |
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EP1727216B1 (en) * | 2005-05-24 | 2019-04-24 | LG Electronics, Inc. | Rod type light emitting diode and method for fabricating the same |
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US7871912B2 (en) * | 2005-12-13 | 2011-01-18 | Versatilis Llc | Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures |
US7638416B2 (en) * | 2005-12-13 | 2009-12-29 | Versatilis Llc | Methods of making semiconductor-based electronic devices on a wire and articles that can be made using such devices |
US7700471B2 (en) * | 2005-12-13 | 2010-04-20 | Versatilis | Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby |
AU2007222162B2 (en) * | 2006-03-08 | 2013-03-07 | Qunano Ab | Method for metal-free synthesis of epitaxial semiconductor nanowires on Si |
US7968359B2 (en) * | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
KR101019941B1 (ko) | 2006-03-10 | 2011-03-09 | 에스티씨. 유엔엠 | Gan 나노선의 펄스 성장 및 ⅲ 족 질화물 반도체 기판 물질과 디바이스에서의 어플리케이션 |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
CN101454487B (zh) * | 2006-03-30 | 2013-01-23 | 晶体公司 | 氮化铝块状晶体的可控掺杂方法 |
US8483820B2 (en) * | 2006-10-05 | 2013-07-09 | Bioness Inc. | System and method for percutaneous delivery of electrical stimulation to a target body tissue |
US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
EP2126986B1 (en) | 2006-12-22 | 2019-09-18 | QuNano AB | Led with upstanding nanowire structure and method of producing such |
EP2091862B1 (en) * | 2006-12-22 | 2019-12-11 | QuNano AB | Elevated led and method of producing such |
US8183587B2 (en) * | 2006-12-22 | 2012-05-22 | Qunano Ab | LED with upstanding nanowire structure and method of producing such |
KR101549270B1 (ko) | 2007-01-12 | 2015-09-01 | 큐나노 에이비 | 질화물 나노와이어 및 이의 제조 방법 |
CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
JP5730484B2 (ja) * | 2007-01-26 | 2015-06-10 | クリスタル アイエス インコーポレイテッド | 厚みのある擬似格子整合型の窒化物エピタキシャル層 |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
WO2008115600A1 (en) * | 2007-03-21 | 2008-09-25 | Olambda, Inc. | Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography |
US8964020B2 (en) * | 2007-04-25 | 2015-02-24 | Stc.Unm | Solid-state microscope for selectively imaging a sample |
US9106056B1 (en) * | 2007-04-25 | 2015-08-11 | Stc.Unm | Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices |
US7759689B2 (en) * | 2007-05-07 | 2010-07-20 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Photonic crystal structures and methods of making and using photonic crystal structures |
US8088220B2 (en) | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
US8896100B2 (en) * | 2007-09-03 | 2014-11-25 | Sophia School Corporation | III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal |
KR100972842B1 (ko) * | 2007-09-11 | 2010-07-28 | 포항공과대학교 산학협력단 | 나노막대를 포함하는 나노디바이스 및 그 제조 방법 |
JP5015705B2 (ja) * | 2007-09-18 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置 |
US8652947B2 (en) | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
WO2009054804A1 (en) * | 2007-10-26 | 2009-04-30 | Qunano Ab | Nanowire growth on dissimilar material |
DE102007052071A1 (de) | 2007-10-30 | 2009-05-07 | Stada Arzneimittel Ag | Stabilisiertes Atorvastatin |
CN101971360A (zh) * | 2008-02-08 | 2011-02-09 | 清洁电池国际股份有限公司 | 用于发电的基于纳米棒的复合结构 |
GB2458442A (en) * | 2008-02-29 | 2009-09-23 | Univ Dublin City | Wide band gap nanostructured devices |
DE102008015333B4 (de) | 2008-03-20 | 2021-05-12 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Nanodraht-Strukturelement, Verfahren zu dessen Herstellung, Mikroreaktorsystem und Katalysatorsystem |
EP2285736A2 (en) * | 2008-05-06 | 2011-02-23 | Kyma Technologies, INC. | Group iii nitride templates and related heterostructures, devices, and methods for making them |
US8390005B2 (en) * | 2008-06-30 | 2013-03-05 | Hewlett-Packard Development Company, L.P. | Apparatus and method for nanowire optical emission |
CN103022282B (zh) | 2008-07-07 | 2016-02-03 | 格罗有限公司 | 纳米结构led |
US8138493B2 (en) * | 2008-07-09 | 2012-03-20 | Qunano Ab | Optoelectronic semiconductor device |
SE533090C2 (sv) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostrukturerad ljusdiod |
KR100956499B1 (ko) * | 2008-08-01 | 2010-05-07 | 주식회사 실트론 | 금속층을 가지는 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자 |
US8058627B2 (en) * | 2008-08-13 | 2011-11-15 | Wisys Technology Foundation | Addressable transmission electron microscope grid |
US20110140072A1 (en) * | 2008-08-21 | 2011-06-16 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
EP2333847B1 (en) * | 2008-09-01 | 2018-02-14 | Sophia School Corporation | Semiconductor optical element array and manufacturing method therefore |
JP5655228B2 (ja) * | 2008-09-01 | 2015-01-21 | 国立大学法人北海道大学 | 半導体構造物の製造方法 |
US8421052B2 (en) * | 2008-09-02 | 2013-04-16 | Georgia Tech Research Corporation | Transverse force, pressure and vibration sensors using piezoelectric nanostructures |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8229255B2 (en) * | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8889455B2 (en) * | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8890271B2 (en) * | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8384007B2 (en) | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8546742B2 (en) * | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US20110115041A1 (en) * | 2009-11-19 | 2011-05-19 | Zena Technologies, Inc. | Nanowire core-shell light pipes |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
US20100304061A1 (en) * | 2009-05-26 | 2010-12-02 | Zena Technologies, Inc. | Fabrication of high aspect ratio features in a glass layer by etching |
US8791470B2 (en) * | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
KR101515100B1 (ko) * | 2008-10-21 | 2015-04-24 | 삼성전자주식회사 | 발광 다이오드 및 그 제조 방법 |
WO2010062644A2 (en) * | 2008-10-28 | 2010-06-03 | The Regents Of The University Of California | Vertical group iii-v nanowires on si, heterostructures, flexible arrays and fabrication |
JP2010135185A (ja) * | 2008-12-04 | 2010-06-17 | Japan Science & Technology Agency | 電子放出素子の製造方法及び電子放出素子 |
WO2010065860A2 (en) | 2008-12-04 | 2010-06-10 | The Regents Of The Univerity Of California | Electron injection nanostructured semiconductor material anode electroluminescence method and device |
SE533531C2 (sv) | 2008-12-19 | 2010-10-19 | Glo Ab | Nanostrukturerad anordning |
KR20100073757A (ko) * | 2008-12-23 | 2010-07-01 | 삼성전자주식회사 | 마이크로 로드를 이용한 발광소자 및 그 제조방법 |
KR101563686B1 (ko) * | 2009-01-15 | 2015-10-27 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
CA2653581A1 (en) | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
WO2010099220A2 (en) | 2009-02-25 | 2010-09-02 | California Institute Of Technology | Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars |
CN102318039B (zh) * | 2009-03-03 | 2014-04-02 | 松下电器产业株式会社 | 氮化镓系化合物半导体的制造方法和半导体发光元件 |
US20100240167A1 (en) * | 2009-03-23 | 2010-09-23 | Neil Dasgupta | Quantum confinement solar cell fabricated by atomic layer deposition |
KR20120003463A (ko) * | 2009-03-25 | 2012-01-10 | 글로 에이비 | 쇼트키 장치 |
KR101562060B1 (ko) | 2009-04-06 | 2015-10-21 | 삼성전자주식회사 | 전기 에너지 발생 장치 및 그 제조 방법 |
WO2010118321A2 (en) * | 2009-04-10 | 2010-10-14 | Clean Cell International Inc. | Composite nanorod-based structures for generating electricity |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
US8299341B2 (en) * | 2009-05-13 | 2012-10-30 | The California Institute Of Technology | Fabrication of vertically aligned metallic nanopillars |
KR101061150B1 (ko) * | 2009-05-22 | 2011-08-31 | 서울대학교산학협력단 | 발광 디바이스와 이의 제조 방법 |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
US8080468B2 (en) * | 2009-06-26 | 2011-12-20 | California Institute Of Technology | Methods for fabricating passivated silicon nanowires and devices thus obtained |
TWM386591U (en) * | 2009-07-30 | 2010-08-11 | Sino American Silicon Prod Inc | Nano patterned substrate and epitaxial structure |
US20110068368A1 (en) * | 2009-09-18 | 2011-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device comprising a honeycomb heteroepitaxy |
AU2010300362A1 (en) * | 2009-10-02 | 2012-04-26 | South Dakota State University | Semiconductor nanoparticle/nanofiber composite electrodes |
JP5094824B2 (ja) * | 2009-10-19 | 2012-12-12 | シャープ株式会社 | 棒状構造発光素子、バックライト、照明装置および表示装置 |
KR101134840B1 (ko) | 2009-10-26 | 2012-04-13 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
WO2011063163A2 (en) * | 2009-11-19 | 2011-05-26 | California Institute Of Technology | Methods for fabricating self-aligning arrangements on semiconductors |
US9018684B2 (en) | 2009-11-23 | 2015-04-28 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
JP2011135058A (ja) * | 2009-11-30 | 2011-07-07 | Honda Motor Co Ltd | 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法 |
US9112085B2 (en) | 2009-11-30 | 2015-08-18 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices |
JP5943339B2 (ja) * | 2009-12-01 | 2016-07-05 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
US9306099B2 (en) | 2009-12-01 | 2016-04-05 | Samsung Electronics Co., Ltd. | Material including graphene and an inorganic material and method of manufacturing the material |
US20110140071A1 (en) * | 2009-12-14 | 2011-06-16 | Olga Kryliouk | Nano-spherical group iii-nitride materials |
TWI479688B (zh) * | 2010-01-15 | 2015-04-01 | Epistar Corp | 發光二極體裝置 |
US20110175126A1 (en) * | 2010-01-15 | 2011-07-21 | Hung-Chih Yang | Light-emitting diode structure |
US9263612B2 (en) | 2010-03-23 | 2016-02-16 | California Institute Of Technology | Heterojunction wire array solar cells |
JP5911856B2 (ja) * | 2010-06-18 | 2016-04-27 | グロ アーベーGlo Ab | ナノワイヤledの構造体およびそれを製作する方法 |
WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
KR101650720B1 (ko) * | 2010-08-04 | 2016-09-06 | 삼성전자주식회사 | 나노로드 기반의 반도체 발광 소자 및 그 제조 방법 |
CN101922015B (zh) * | 2010-08-25 | 2012-07-04 | 中国科学院半导体研究所 | 一种InGaN半导体光电极的制作方法 |
KR101636915B1 (ko) * | 2010-09-03 | 2016-07-07 | 삼성전자주식회사 | 그래핀 또는 탄소나노튜브를 이용한 반도체 화합물 구조체 및 그 제조방법과, 반도체 화합물 구조체를 포함하는 반도체 소자 |
FR2975532B1 (fr) | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
WO2012035243A1 (fr) * | 2010-09-14 | 2012-03-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a base de nanofils pour l'émission de lumière |
KR101691906B1 (ko) | 2010-09-14 | 2017-01-02 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광 소자 제조방법 |
KR101710159B1 (ko) | 2010-09-14 | 2017-03-08 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법 |
JP2013546181A (ja) * | 2010-10-28 | 2013-12-26 | ユニバーシティ オブ ユタ リサーチ ファウンデーション | Iii−v族半導体におけるp型ドーピングを強化する方法 |
WO2012059837A1 (en) * | 2010-11-04 | 2012-05-10 | Koninklijke Philips Electronics N.V. | Solid state light emitting devices based on crystallographically relaxed structures |
KR101762176B1 (ko) | 2010-11-23 | 2017-07-27 | 삼성전자 주식회사 | 나노로드 발광소자 |
TWI459460B (zh) * | 2010-11-24 | 2014-11-01 | Univ Nat Taiwan | 半導體微奈米柱的製作方法與應用 |
WO2012075461A1 (en) * | 2010-12-02 | 2012-06-07 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices based on repetitive multiple step growth-etch sequence |
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
KR101718067B1 (ko) * | 2010-12-15 | 2017-03-20 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
TWI540754B (zh) * | 2010-12-27 | 2016-07-01 | 鴻海精密工業股份有限公司 | 發光二極體及其形成方法 |
CN102593273B (zh) * | 2011-01-17 | 2015-09-30 | 晶元光电股份有限公司 | 发光二极管装置及基板结构的形成方法 |
US8143147B1 (en) | 2011-02-10 | 2012-03-27 | Intermolecular, Inc. | Methods and systems for forming thin films |
US20120217474A1 (en) * | 2011-02-25 | 2012-08-30 | Agency For Science, Technology And Research | Photonic device and method of making the same |
FR2973936B1 (fr) | 2011-04-05 | 2014-01-31 | Commissariat Energie Atomique | Procede de croissance selective sur une structure semiconductrice |
TW201246599A (en) * | 2011-05-06 | 2012-11-16 | Nanocrystal Asia Inc Taiwan | Semiconductor substrate and fabricating method thereof |
WO2013130027A1 (en) * | 2011-05-20 | 2013-09-06 | Zena Technologies, Inc. | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8895104B2 (en) * | 2011-07-01 | 2014-11-25 | International Business Machines Corporation | Thin film composite membranes embedded with molecular cage compounds |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
CN102916095A (zh) * | 2011-07-31 | 2013-02-06 | 华新丽华股份有限公司 | 发光二极管 |
US9178446B2 (en) * | 2011-08-30 | 2015-11-03 | Georgia Tech Research Corporation | Triboelectric generator |
US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
US8350249B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
US9035278B2 (en) | 2011-09-26 | 2015-05-19 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
JP5813448B2 (ja) * | 2011-10-07 | 2015-11-17 | シャープ株式会社 | 窒化物半導体素子の製造方法 |
TWI474507B (zh) * | 2011-10-18 | 2015-02-21 | Lextar Electronics Corp | 固態發光元件之製作方法 |
KR101279073B1 (ko) * | 2011-11-21 | 2013-06-26 | 포항공과대학교 산학협력단 | 발광 다이오드 및 그 제조방법 |
FR2983639B1 (fr) | 2011-12-01 | 2014-07-18 | Commissariat Energie Atomique | Dispositif optoelectronique comprenant des nanofils de structure coeur/coquille |
US8937297B2 (en) | 2011-12-02 | 2015-01-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optoelectronic device including nanowires with a core/shell structure |
CN103999200B (zh) * | 2011-12-23 | 2016-12-28 | 英特尔公司 | 具有包含不同材料取向或组成的纳米线或半导体主体的共衬底半导体器件 |
US8648328B2 (en) | 2011-12-27 | 2014-02-11 | Sharp Laboratories Of America, Inc. | Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces |
US8785905B1 (en) * | 2012-01-19 | 2014-07-22 | Sandia Corporation | Amber light-emitting diode comprising a group III-nitride nanowire active region |
KR101326056B1 (ko) * | 2012-02-15 | 2013-11-07 | 주식회사 칩테크놀러지 | 반도체 발광 다이오드 및 그의 제조 방법 |
KR101326058B1 (ko) * | 2012-02-15 | 2013-11-07 | 주식회사 칩테크놀러지 | 반도체 발광 다이오드 및 그의 제조 방법 |
US10090425B2 (en) * | 2012-02-21 | 2018-10-02 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
KR101356701B1 (ko) * | 2012-03-22 | 2014-02-04 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
WO2013152132A1 (en) | 2012-04-03 | 2013-10-10 | The California Institute Of Technology | Semiconductor structures for fuel generation |
TW201344749A (zh) * | 2012-04-23 | 2013-11-01 | Nanocrystal Asia Inc | 以塡膠燒結方式製造選擇性成長遮罩之方法 |
TW201411692A (zh) * | 2012-04-23 | 2014-03-16 | Nanocrystal Asia Inc | 以壓印方式製造選擇性成長遮罩之方法 |
US10937649B2 (en) | 2012-06-18 | 2021-03-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
TWI476953B (zh) | 2012-08-10 | 2015-03-11 | Univ Nat Taiwan | 半導體發光元件及其製作方法 |
CN103928582B (zh) * | 2012-08-28 | 2017-09-29 | 晶元光电股份有限公司 | 一种化合物半导体元件及其制备方法 |
JP2015532014A (ja) * | 2012-09-18 | 2015-11-05 | グロ アーベーGlo Ab | ナノピラミッドサイズ光電構造及びそれを製造するための方法 |
DE102012109594A1 (de) | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
EP2912698B1 (en) * | 2012-10-26 | 2018-04-04 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
KR101898680B1 (ko) * | 2012-11-05 | 2018-09-13 | 삼성전자주식회사 | 나노구조 발광 소자 |
KR20140064374A (ko) | 2012-11-20 | 2014-05-28 | 삼성전기주식회사 | 인듐 나노 와이어, 인듐 나노 와이어 소자 및 인듐 나노 와이어 제조 방법 |
US8896101B2 (en) * | 2012-12-21 | 2014-11-25 | Intel Corporation | Nonplanar III-N transistors with compositionally graded semiconductor channels |
KR101916274B1 (ko) | 2013-01-24 | 2018-11-07 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
US9553223B2 (en) | 2013-01-24 | 2017-01-24 | California Institute Of Technology | Method for alignment of microwires |
KR101554032B1 (ko) * | 2013-01-29 | 2015-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102022266B1 (ko) * | 2013-01-29 | 2019-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
WO2014143991A1 (en) | 2013-03-15 | 2014-09-18 | Glo Ab | Nanowire led structure with decreased leakage and method of making same |
WO2014151264A1 (en) | 2013-03-15 | 2014-09-25 | Crystal Is, Inc. | Planar contacts to pseudomorphic electronic and optoelectronic devices |
DE102013104273A1 (de) * | 2013-04-26 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Anordnung mit säulenartiger Struktur und einer aktiven Zone |
US9196787B2 (en) | 2013-06-07 | 2015-11-24 | Glo Ab | Nanowire LED structure with decreased leakage and method of making same |
CN103779400A (zh) * | 2013-06-09 | 2014-05-07 | 国家纳米科学中心 | 一种复合电极及其制备方法 |
US9224914B2 (en) | 2013-06-18 | 2015-12-29 | Glo Ab | Insulating layer for planarization and definition of the active region of a nanowire device |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
US9142745B2 (en) | 2013-08-27 | 2015-09-22 | Glo Ab | Packaged LED device with castellations |
TW201517323A (zh) | 2013-08-27 | 2015-05-01 | Glo Ab | 模製發光二極體封裝及其製造方法 |
US8999737B2 (en) | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
CN104465657B (zh) * | 2013-09-22 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | 互补tfet 及其制造方法 |
KR102075985B1 (ko) * | 2013-10-14 | 2020-02-11 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR101834785B1 (ko) | 2013-10-21 | 2018-03-06 | 센서 일렉트로닉 테크놀로지, 인크 | 합성물 반도체 층을 포함하는 이종 접합 구조 |
US9099573B2 (en) | 2013-10-31 | 2015-08-04 | Samsung Electronics Co., Ltd. | Nano-structure semiconductor light emitting device |
TW201525525A (zh) | 2013-12-09 | 2015-07-01 | Glo Ab | 光學顯示系統 |
US9972750B2 (en) | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
FR3016082B1 (fr) | 2013-12-30 | 2017-05-05 | Aledia | Dispositif optoelectronique a elements semiconducteurs et son procede de fabrication |
KR102070092B1 (ko) | 2014-01-09 | 2020-01-29 | 삼성전자주식회사 | 반도체 발광소자 |
KR102285786B1 (ko) | 2014-01-20 | 2021-08-04 | 삼성전자 주식회사 | 반도체 발광 소자 |
CN103943754A (zh) * | 2014-03-06 | 2014-07-23 | 京东方科技集团股份有限公司 | 一种电致发光器件及其制备方法和显示装置 |
KR102188497B1 (ko) * | 2014-03-27 | 2020-12-09 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102203461B1 (ko) | 2014-07-10 | 2021-01-18 | 삼성전자주식회사 | 나노 구조 반도체 발광 소자 |
US9773889B2 (en) * | 2014-07-18 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company Limited | Method of semiconductor arrangement formation |
US9921678B2 (en) | 2014-08-05 | 2018-03-20 | Georgia Tech Research Corporation | Self-powered, ultra-sensitive, flexible tactile sensors based on contact electrification |
WO2016022824A1 (en) | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
KR102227771B1 (ko) | 2014-08-25 | 2021-03-16 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102295966B1 (ko) | 2014-08-27 | 2021-09-01 | 삼성전자주식회사 | 나노와이어를 이용한 반도체 소자 형성 방법 |
US9343529B2 (en) | 2014-09-05 | 2016-05-17 | International Business Machines Corporation | Method of formation of germanium nanowires on bulk substrates |
JP2017533574A (ja) | 2014-09-18 | 2017-11-09 | インテル・コーポレーション | シリコンcmos互換性半導体装置における欠陥伝播制御のための傾斜側壁カット面を有するウルツ鉱ヘテロエピタキシャル構造物 |
JP6376575B2 (ja) | 2014-09-25 | 2018-08-22 | インテル・コーポレーション | 自立シリコンメサ上のiii−nエピタキシャル素子構造 |
WO2016049507A1 (en) | 2014-09-26 | 2016-03-31 | Glo Ab | Monolithic image chip for near-to-eye display |
KR102244218B1 (ko) | 2014-10-01 | 2021-04-27 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
US9917226B1 (en) | 2016-09-15 | 2018-03-13 | Sharp Kabushiki Kaisha | Substrate features for enhanced fluidic assembly of electronic devices |
US9892944B2 (en) | 2016-06-23 | 2018-02-13 | Sharp Kabushiki Kaisha | Diodes offering asymmetric stability during fluidic assembly |
US9755110B1 (en) | 2016-07-27 | 2017-09-05 | Sharp Laboratories Of America, Inc. | Substrate with topological features for steering fluidic assembly LED disks |
US10249599B2 (en) | 2016-06-29 | 2019-04-02 | eLux, Inc. | Laminated printed color conversion phosphor sheets |
US9985190B2 (en) | 2016-05-18 | 2018-05-29 | eLux Inc. | Formation and structure of post enhanced diodes for orientation control |
KR102212557B1 (ko) | 2014-11-03 | 2021-02-08 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102252993B1 (ko) | 2014-11-03 | 2021-05-20 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자의 제조방법 |
KR102333752B1 (ko) | 2014-11-18 | 2021-12-01 | 인텔 코포레이션 | n-채널 및 p-채널 갈륨 질화물 트랜지스터들을 사용하는 CMOS 회로들 |
DE102014117995A1 (de) * | 2014-12-05 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode |
WO2016099491A1 (en) * | 2014-12-17 | 2016-06-23 | Intel Corporation | Integrated circuit die having reduced defect group iii-nitride structures and methods associated therewith |
US10056456B2 (en) | 2014-12-18 | 2018-08-21 | Intel Corporation | N-channel gallium nitride transistors |
US9460921B2 (en) | 2015-04-06 | 2016-10-04 | The United States Of America, As Represented By The Secretary Of Commerce | Nanowire article and processes for making and using same |
KR102504576B1 (ko) | 2015-05-19 | 2023-02-28 | 인텔 코포레이션 | 융기된 도핑 결정성 구조체들을 가진 반도체 디바이스들 |
US10425018B2 (en) | 2015-05-19 | 2019-09-24 | Georgia Tech Research Corporation | Triboelectric nanogenerator for harvesting broadband kinetic impact energy |
CN104916713B (zh) * | 2015-05-28 | 2017-04-05 | 东南大学 | 一种以光子晶体作为入射窗的氮化镓基紫外探测器 |
US9590157B2 (en) | 2015-06-04 | 2017-03-07 | The Silanna Group Pty Ltd | Efficient dual metal contact formation for a semiconductor device |
EP3314659A4 (en) * | 2015-06-26 | 2019-01-23 | INTEL Corporation | HETEROSEPITAXIAL STRUCTURES WITH STABLE SUBSTRATE INTERFACE MATERIAL AT HIGH TEMPERATURE |
ES2821019T3 (es) | 2015-07-13 | 2021-04-23 | Crayonano As | Nanocables o nanopirámides cultivados sobre un sustrato grafítico |
EP3323152B1 (en) * | 2015-07-13 | 2021-10-27 | Crayonano AS | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
EP3127747A1 (fr) * | 2015-08-07 | 2017-02-08 | Valeo Vision | Dispositif d'éclairage et/ou de signalisation pour véhicule automobile |
EP3145038A1 (en) * | 2015-09-15 | 2017-03-22 | Technische Universität München | Nanowire laser structure and fabrication method |
EP3144957A1 (en) * | 2015-09-15 | 2017-03-22 | Technische Universität München | A method for fabricating a nanostructure |
FR3044469B1 (fr) * | 2015-11-30 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles a portion monocristalline elargie |
DE102015121554B4 (de) | 2015-12-10 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
US11322652B2 (en) | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
WO2017111869A1 (en) | 2015-12-24 | 2017-06-29 | Intel Corporation | Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers |
DE102016102876A1 (de) * | 2016-02-18 | 2017-08-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US10600354B2 (en) | 2016-04-22 | 2020-03-24 | Glo Ab | Small pitch direct view display and method of making thereof |
CN105957801A (zh) * | 2016-05-31 | 2016-09-21 | 中国科学院半导体研究所 | 氮化镓纳米锥和氮化镓纳米柱混合阵列的制作方法 |
FR3052915A1 (fr) * | 2016-06-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de fabrication d'une diode electroluminescente au nitrure de gallium |
US9627437B1 (en) | 2016-06-30 | 2017-04-18 | Sharp Laboratories Of America, Inc. | Patterned phosphors in through hole via (THV) glass |
CN106206212A (zh) * | 2016-07-25 | 2016-12-07 | 六盘水师范学院 | 一种生长可控AlN有序纳米阵列的方法 |
US10243097B2 (en) | 2016-09-09 | 2019-03-26 | eLux Inc. | Fluidic assembly using tunable suspension flow |
CN109863576A (zh) | 2016-10-19 | 2019-06-07 | 六边钻公司 | 形成iii-氮化物材料的平坦表面 |
US9837390B1 (en) | 2016-11-07 | 2017-12-05 | Corning Incorporated | Systems and methods for creating fluidic assembly structures on a substrate |
FR3061605B1 (fr) * | 2016-12-29 | 2019-05-31 | Aledia | Dispositif optoélectronique à diodes électroluminescentes |
US10998465B2 (en) * | 2017-01-09 | 2021-05-04 | Glo Ab | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
EP3352228B1 (en) * | 2017-01-24 | 2019-09-25 | OSRAM Opto Semiconductors GmbH | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
KR102587958B1 (ko) * | 2017-02-03 | 2023-10-11 | 삼성전자주식회사 | 메타 광학 소자 및 그 제조 방법 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN106981506B (zh) * | 2017-04-19 | 2023-09-29 | 华南理工大学 | 纳米线GaN高电子迁移率晶体管 |
US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
PL3460858T3 (pl) | 2017-09-20 | 2020-11-16 | Instytut Technologii Materialów Elektronicznych | Sposób wytwarzania kolumnowych struktur elektroluminescencyjnych UV i struktury wytworzone tym sposobem |
US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
CN108206130B (zh) * | 2018-01-11 | 2023-10-10 | 华南理工大学 | 生长在铝箔衬底上的氮化铟纳米柱外延片及其制备方法 |
EP3785289A1 (en) | 2018-04-22 | 2021-03-03 | Epinovatech AB | Reinforced thin-film device |
GB2575311B (en) * | 2018-07-06 | 2021-03-03 | Plessey Semiconductors Ltd | Monolithic LED array and a precursor thereto |
CN109148654B (zh) * | 2018-08-30 | 2020-04-07 | 芜湖德豪润达光电科技有限公司 | 非极性面ⅲ族氮化物外延结构及其制备方法 |
US11758716B2 (en) | 2018-09-05 | 2023-09-12 | Micron Technology, Inc. | Electronic devices including vertical memory cells and related methods |
KR102158176B1 (ko) * | 2018-11-09 | 2020-09-22 | 전남대학교산학협력단 | 미세기둥으로 연결된 GaN 계열 박막층을 가진 반도체 기판 및 이의 제조 방법 |
JP6891870B2 (ja) * | 2018-12-28 | 2021-06-18 | セイコーエプソン株式会社 | プロジェクター |
CN109979957B (zh) * | 2019-03-15 | 2024-05-17 | 广东省半导体产业技术研究院 | 半导体发光器件及其制作方法 |
JP6935657B2 (ja) * | 2019-03-26 | 2021-09-15 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
CN110190086B (zh) * | 2019-06-05 | 2021-07-27 | 广东省半导体产业技术研究院 | 高压直流led或交流led及其制造方法 |
CN110085714B (zh) * | 2019-06-05 | 2024-03-22 | 广东省半导体产业技术研究院 | 直流发光器件及其制作方法 |
EP3813240A1 (en) | 2019-10-25 | 2021-04-28 | Epinovatech AB | Ac-dc converter circuit |
WO2021108772A1 (en) * | 2019-11-29 | 2021-06-03 | Unm Rainforest Innovations | Devices comprising distributed bragg reflectors and methods of making the devices |
EP3836227A1 (en) | 2019-12-11 | 2021-06-16 | Epinovatech AB | Semiconductor layer structure |
CN111416044B (zh) * | 2020-01-20 | 2023-06-09 | 重庆科技学院 | 一种平铺式壳芯结构钙钛矿纳米线的芯层及其太阳能电池制作方法 |
US11695100B2 (en) | 2020-01-21 | 2023-07-04 | Nanosys, Inc. | Light emitting diode containing a grating and methods of making the same |
EP3866189B1 (en) | 2020-02-14 | 2022-09-28 | Epinovatech AB | A mmic front-end module |
EP3879706A1 (en) | 2020-03-13 | 2021-09-15 | Epinovatech AB | Field-programmable gate array device |
GB202007350D0 (en) | 2020-05-18 | 2020-07-01 | Univ Cork | Semiconductor heterostructure |
CN111969056A (zh) * | 2020-08-31 | 2020-11-20 | 华南师范大学 | 一种核壳结构AlGaN/GaN异质结纳米线基晶体管及其制备方法 |
CN112614775A (zh) * | 2020-12-16 | 2021-04-06 | 上海华力微电子有限公司 | 半导体器件及其制造方法 |
EP4101945B1 (en) | 2021-06-09 | 2024-05-15 | Epinovatech AB | A device for performing electrolysis of water, and a system thereof |
DE102021207298A1 (de) | 2021-07-09 | 2023-01-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303301A (ja) * | 2004-04-07 | 2005-10-27 | Samsung Electronics Co Ltd | ナノワイヤー発光素子及びその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030073680A1 (en) * | 1995-09-20 | 2003-04-17 | The Regents Of The University Of Michigan | Amino ceramide-like compounds and therapeutic methods of use |
RU2099808C1 (ru) | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
US5976957A (en) * | 1996-10-28 | 1999-11-02 | Sony Corporation | Method of making silicon quantum wires on a substrate |
WO1999023693A1 (en) * | 1997-10-30 | 1999-05-14 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
US6596377B1 (en) | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
AU2002307008C1 (en) * | 2001-03-30 | 2008-10-30 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
US7229498B2 (en) * | 2002-10-29 | 2007-06-12 | Midwest Research Institute | Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys |
US7355216B2 (en) * | 2002-12-09 | 2008-04-08 | The Regents Of The University Of California | Fluidic nanotubes and devices |
JP4428921B2 (ja) * | 2002-12-13 | 2010-03-10 | キヤノン株式会社 | ナノ構造体、電子デバイス、及びその製造方法 |
US7445742B2 (en) * | 2003-08-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Imprinting nanoscale patterns for catalysis and fuel cells |
US7306631B2 (en) * | 2004-03-30 | 2007-12-11 | The Procter & Gamble Company | Keratin dyeing compounds, keratin dyeing compositions containing them, and use thereof |
US7107940B2 (en) | 2004-07-29 | 2006-09-19 | Abinanti T Michael | Animal restraining apparatus |
US7407872B2 (en) * | 2004-08-20 | 2008-08-05 | Yale University | Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition |
TWI500072B (zh) * | 2004-08-31 | 2015-09-11 | Sophia School Corp | 發光元件之製造方法 |
JP2008511985A (ja) * | 2004-08-31 | 2008-04-17 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | ナノ構造体及びそれを製造する方法 |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7303631B2 (en) * | 2004-10-29 | 2007-12-04 | Sharp Laboratories Of America, Inc. | Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer |
US20060223211A1 (en) * | 2004-12-02 | 2006-10-05 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
US7309621B2 (en) * | 2005-04-26 | 2007-12-18 | Sharp Laboratories Of America, Inc. | Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition |
US8163575B2 (en) | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
US20070257264A1 (en) * | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
US7349613B2 (en) * | 2006-01-24 | 2008-03-25 | Hewlett-Packard Development Company, L.P. | Photonic crystal devices including gain material and methods for using the same |
US20080073743A1 (en) * | 2006-02-17 | 2008-03-27 | Lockheed Martin Corporation | Templated growth of semiconductor nanostructures, related devices and methods |
KR101019941B1 (ko) | 2006-03-10 | 2011-03-09 | 에스티씨. 유엔엠 | Gan 나노선의 펄스 성장 및 ⅲ 족 질화물 반도체 기판 물질과 디바이스에서의 어플리케이션 |
DE102006013245A1 (de) * | 2006-03-22 | 2007-10-04 | Infineon Technologies Ag | Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren |
-
2007
- 2007-03-09 KR KR1020087021861A patent/KR101019941B1/ko active IP Right Grant
- 2007-03-09 SG SG201101725-8A patent/SG170094A1/en unknown
- 2007-03-09 WO PCT/US2007/063673 patent/WO2008048704A2/en active Application Filing
- 2007-03-09 NZ NZ570678A patent/NZ570678A/en not_active IP Right Cessation
- 2007-03-09 US US11/684,264 patent/US7521274B2/en active Active
- 2007-03-09 EP EP07863327.8A patent/EP1994552B1/en active Active
- 2007-03-09 MX MX2008011275A patent/MX2008011275A/es active IP Right Grant
- 2007-03-09 MY MYPI20083234A patent/MY149865A/en unknown
- 2007-03-09 CA CA2643439A patent/CA2643439C/en active Active
- 2007-03-09 JP JP2008558549A patent/JP5592610B2/ja active Active
- 2007-03-09 AU AU2007313096A patent/AU2007313096B2/en active Active
-
2008
- 2008-09-02 IL IL193824A patent/IL193824A/en not_active IP Right Cessation
-
2009
- 2009-03-06 US US12/399,273 patent/US8039854B2/en active Active
-
2011
- 2011-09-13 US US13/231,559 patent/US8410496B2/en active Active
-
2013
- 2013-03-01 US US13/783,219 patent/US8716045B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303301A (ja) * | 2004-04-07 | 2005-10-27 | Samsung Electronics Co Ltd | ナノワイヤー発光素子及びその製造方法 |
Non-Patent Citations (2)
Title |
---|
JPN7012004487; G.Kipshidze etc: 'Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition' APPLIED PHYSICS LETTERS 86(2005), 20050111, 033104 * |
JPN7012004488; Jinichiro Noborisaka etc.: 'Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy' APPLIED PHYSICS LETTERS 86(2005), 20050516, 213102 * |
Cited By (71)
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US8390086B2 (en) | 2006-05-22 | 2013-03-05 | Hewlett-Packard Development Company, L.P. | Solar cell employing a nanowire |
US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
JP2011119618A (ja) * | 2009-12-07 | 2011-06-16 | Sharp Corp | 棒状構造発光素子の製造方法、棒状構造発光素子、バックライト、照明装置および表示装置 |
JP2011119617A (ja) * | 2009-12-07 | 2011-06-16 | Sharp Corp | 棒状構造発光素子の製造方法 |
JP2011119586A (ja) * | 2009-12-07 | 2011-06-16 | Sharp Corp | 棒状構造発光素子、バックライト、照明装置および表示装置 |
JP2011142293A (ja) * | 2010-01-08 | 2011-07-21 | Taiwan Semiconductor Manufacturing Co Ltd | ダイオードベースのデバイスとその製造方法 |
JP2013532621A (ja) * | 2010-06-24 | 2013-08-19 | グロ アーベー | 配向されたナノワイヤー成長用のバッファ層を有する基板 |
US9947829B2 (en) | 2010-06-24 | 2018-04-17 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
JP2012089900A (ja) * | 2010-09-01 | 2012-05-10 | Sharp Corp | 発光素子およびその製造方法 |
US9190590B2 (en) | 2010-09-01 | 2015-11-17 | Sharp Kabushiki Kaisha | Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode |
JPWO2012077513A1 (ja) * | 2010-12-08 | 2014-05-19 | エルシード株式会社 | Iii族窒化物半導体デバイス及びその製造方法 |
US9142619B2 (en) | 2010-12-08 | 2015-09-22 | El-Seed Corporation | Group III nitride semiconductor device and method for manufacturing the same |
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JP2013006761A (ja) * | 2011-06-24 | 2013-01-10 | Qinghua Univ | エピタキシャルベース及びエピタキシャル構造体の製造方法 |
JP2013110160A (ja) * | 2011-11-17 | 2013-06-06 | Fujitsu Ltd | 半導体ナノデバイス |
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US9036673B2 (en) | 2012-02-27 | 2015-05-19 | Fujitsu Limited | Semiconductor laser |
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US9214600B2 (en) | 2012-03-01 | 2015-12-15 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
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JP2014027168A (ja) * | 2012-07-27 | 2014-02-06 | Nippon Telegr & Teleph Corp <Ntt> | フォトニック結晶共振器の作製方法およびフォトニック結晶共振器 |
JP2018097367A (ja) * | 2012-10-04 | 2018-06-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 発光ダイオードディスプレイの製造方法および発光ダイオードディスプレイ |
US10770506B2 (en) | 2012-10-04 | 2020-09-08 | Osram Oled Gmbh | Method for producing a light-emitting diode display and light-emitting diode display |
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US9991342B2 (en) | 2012-10-26 | 2018-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device |
JP2016500925A (ja) * | 2012-10-26 | 2016-01-14 | グロ アーベーGlo Ab | ナノワイヤled構造及びその製造方法 |
US10636653B2 (en) | 2012-10-26 | 2020-04-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps |
JP2016503577A (ja) * | 2012-10-26 | 2016-02-04 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 半導体構造体の製造方法 |
JP2015536565A (ja) * | 2012-10-26 | 2015-12-21 | アルディア | 光電子デバイス、及び光電子デバイスを製造する方法 |
KR20140065980A (ko) * | 2012-11-22 | 2014-05-30 | 전북대학교산학협력단 | 다이오드의 제조방법 |
KR101938010B1 (ko) * | 2012-11-22 | 2019-01-14 | 전북대학교산학협력단 | 다이오드의 제조방법 |
US9496462B2 (en) | 2013-01-11 | 2016-11-15 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
JP2016510502A (ja) * | 2013-01-11 | 2016-04-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体チップ |
JP2014165205A (ja) * | 2013-02-21 | 2014-09-08 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
JP2016515991A (ja) * | 2013-03-14 | 2016-06-02 | キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー | 無欠陥単結晶薄層 |
JP2016519421A (ja) * | 2013-03-15 | 2016-06-30 | グロ アーベーGlo Ab | ナノワイヤledの抽出効率を向上させる高誘電体膜 |
US10079331B2 (en) | 2013-03-15 | 2018-09-18 | Glo Ab | High index dielectric film to increase extraction efficiency of nanowire LEDs |
JP2016526785A (ja) * | 2013-06-20 | 2016-09-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | キャリアを有する発光アセンブリ |
JP2015012267A (ja) * | 2013-07-02 | 2015-01-19 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
KR102249608B1 (ko) * | 2013-09-30 | 2021-05-07 | 알레디아 | 발광 다이오드를 포함하는 광전자 디바이스 |
US10937777B2 (en) | 2013-09-30 | 2021-03-02 | Aledia | Opto-electronic device with light-emitting diodes |
KR20160064109A (ko) * | 2013-09-30 | 2016-06-07 | 알레디아 | 발광 다이오드를 포함하는 광전자 디바이스 |
JP2016539493A (ja) * | 2013-09-30 | 2016-12-15 | アルディア | 発光ダイオードを含む光電デバイス |
JP2016535434A (ja) * | 2013-09-30 | 2016-11-10 | コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ | 発光ダイオードを備えた光電子デバイスを製造する方法 |
JP2016004942A (ja) * | 2014-06-18 | 2016-01-12 | 富士通株式会社 | 半導体ナノワイヤの製造方法及び半導体ナノワイヤ素子の製造方法 |
JP2016021556A (ja) * | 2014-07-11 | 2016-02-04 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 半導体発光素子の製造方法 |
US9537051B2 (en) | 2014-08-29 | 2017-01-03 | Samsung Electronics Co., Ltd. | Nanostructure semiconductor light emitting device |
JP2018526230A (ja) * | 2015-06-10 | 2018-09-13 | サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクCentre National De La Recherche Scientifique | ナノ構造体を製造する方法 |
US11085130B2 (en) | 2015-06-10 | 2021-08-10 | Centre National De La Recherche Scientifique | Method for producing nanostructures |
JP7009358B2 (ja) | 2015-07-31 | 2022-01-25 | クラヨナノ エーエス | グラファイト基板上でのナノワイヤ又はナノピラミッドの成長方法 |
JP2018529610A (ja) * | 2015-07-31 | 2018-10-11 | クラヨナノ エーエス | グラファイト基板上でのナノワイヤ又はナノピラミッドの成長方法 |
JP2019527470A (ja) * | 2016-06-28 | 2019-09-26 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | 三次元半導体素子のエピタキシャル成長に適した核形成構造 |
JP2020505782A (ja) * | 2017-02-03 | 2020-02-20 | ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー(エヌティーエヌユー) | グラフェン型基板上に成長させたナノワイヤをベースとしたレーザ又はled |
JP7229164B2 (ja) | 2017-02-03 | 2023-02-27 | ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー(エヌティーエヌユー) | グラフェン型基板上に成長させたナノワイヤをベースとしたレーザ又はled |
JP2019064873A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社小糸製作所 | 半導体成長用基板、半導体素子、半導体発光素子及び半導体成長用基板の製造方法 |
JP7053209B2 (ja) | 2017-10-02 | 2022-04-12 | 株式会社小糸製作所 | 半導体成長用基板、半導体素子、半導体発光素子及び半導体成長用基板の製造方法 |
JP2020030308A (ja) * | 2018-08-22 | 2020-02-27 | セイコーエプソン株式会社 | プロジェクター |
JP7188690B2 (ja) | 2018-08-22 | 2022-12-13 | セイコーエプソン株式会社 | プロジェクター |
JP2021086929A (ja) * | 2019-11-28 | 2021-06-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP7392426B2 (ja) | 2019-11-28 | 2023-12-06 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
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SG170094A1 (en) | 2011-04-29 |
MX2008011275A (es) | 2008-11-25 |
US20080036038A1 (en) | 2008-02-14 |
KR20090008182A (ko) | 2009-01-21 |
AU2007313096A1 (en) | 2008-04-24 |
EP1994552A2 (en) | 2008-11-26 |
US8039854B2 (en) | 2011-10-18 |
US20090169828A1 (en) | 2009-07-02 |
AU2007313096B2 (en) | 2011-11-10 |
JP5592610B2 (ja) | 2014-09-17 |
EP1994552A4 (en) | 2013-11-20 |
WO2008048704A2 (en) | 2008-04-24 |
US8410496B2 (en) | 2013-04-02 |
IL193824A (en) | 2013-08-29 |
US8716045B2 (en) | 2014-05-06 |
US7521274B2 (en) | 2009-04-21 |
KR101019941B1 (ko) | 2011-03-09 |
EP1994552B1 (en) | 2020-12-30 |
US20130175501A1 (en) | 2013-07-11 |
WO2008048704A3 (en) | 2008-07-03 |
NZ570678A (en) | 2010-10-29 |
CA2643439A1 (en) | 2008-04-24 |
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US20120001153A1 (en) | 2012-01-05 |
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