JP2009260253A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 270
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 148
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000005684 electric field Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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Abstract
【解決手段】第1n型導体層11、第2n型半導体層12、p型半導体層13、n型半導体領域14、トレンチ3、ゲート電極41およびゲート絶縁層5、を備えた半導体装置A1であって、境界側部K1と境界底部K2,K3とを備える、第2n型半導体層12とp型半導体層13との境界は、トレンチ3の側面に接する第1の部分と、幅方向yにおいて、トレンチ3の側面から離間している第2の部分と、を有しており、深さ方向xにおいて、上記第1の部分、ゲート電極41の底部、トレンチ3の底部および上記第2の部分が、この順番に存在している。
【選択図】 図1
Description
11 第1n型半導体層
12 第2n型半導体層
13 p型半導体層
131 第1p型半導体層
132 第2p型半導体層
13a 高濃度p型半導体領域
14 n型半導体領域
15 (追加の)p型半導体領域
3,3’ トレンチ
41 ゲート電極
42 ソース電極
43 ドレイン電極
5 ゲート絶縁層
6 層間絶縁膜
m 二酸化珪素層
ps,ps1,ps2,ps3 ポリシリコン層
T1 溝
T2 凹部
K1 境界側部
K2,K3 境界底部
x 深さ方向
y 幅方向
Claims (8)
- 第1の導電型をもつ第1半導体層と、
この第1半導体層上に設けられ、上記第1の導電型と反対の第2の導電型を持つ第2半導体層と、
この第2半導体層を貫通して上記第1半導体層に達するトレンチと、
上記トレンチの表面に沿って、上記トレンチの底部および側部に形成された絶縁層と、
この絶縁層により上記第1半導体層および上記第2半導体層と絶縁されており、少なくとも一部が上記トレンチ内部に形成されたゲート電極と、
上記第2半導体層上に、かつ、上記トレンチの周囲に形成された上記第1の導電型をもつ半導体領域と、
を備えた半導体装置であって、
上記第1半導体層と上記第2半導体層との境界は、上記トレンチの側面に接する第1の部分と、上記トレンチの深さ方向と垂直である幅方向において、上記トレンチの側面から離間している第2の部分と、を有しており、
上記トレンチの深さ方向において、上記第1の部分、上記ゲート電極の底部、上記トレンチの底部および上記第2の部分が、この順番に存在していることを特徴とする、半導体装置。 - 上記第2半導体層は、上記トレンチに沿っており、かつ、上記第1半導体層および上記半導体領域に接するチャネル領域を有し、
このチャネル領域における不純物濃度は、上記第2半導体層における上記第2の部分に接する部分の不純物濃度よりも小さい、請求項1に記載の半導体装置。 - 上記第1半導体層、上記第2半導体層または上記半導体領域に、凹部が形成されており、
上記第2の部分と、上記凹部とが、上記幅方向において重なっている、請求項1または2に記載の半導体装置。 - 上記第2の導電型をもつ追加の半導体領域をさらに有し、
この追加の半導体領域は、上記第1半導体層内に形成されているとともに上記第2半導体層と離間している、請求項1ないし3のいずれかに記載の半導体装置。 - 上記追加の半導体領域は、上記トレンチの底部と接している、請求項4に記載の半導体装置。
- 上記追加の半導体領域は、上記トレンチの底部から上記トレンチの側面にわたって接するように形成されている、請求項4または5に記載の半導体装置。
- 上記追加の半導体領域は、上記トレンチと接しており、
上記追加の半導体領域と上記トレンチとの境界は、上記トレンチの深さ方向視において、上記トレンチの開口部の内側にのみ存在する、請求項4ないし6のいずれかに記載の半導体装置。 - 第1の導電型をもつ第1半導体層と、
この第1半導体層上に設けられ、上記第1の導電型と反対の第2の導電型を持つ第2半導体層と、
この第2半導体層を貫通して上記第1半導体層に達するトレンチと、
上記トレンチの表面に沿って、上記トレンチの内部に形成された絶縁層と、
この絶縁層により上記第1半導体層および上記第2半導体層と絶縁されており、少なくとも一部が上記トレンチ内部に形成されたゲート電極と、
上記第2半導体層上に、かつ、上記トレンチの周囲に形成された上記第1の導電型をもつ半導体領域と、
を備えた半導体装置の製造方法であって、
上記第1の導電型をもつ半導体基板を用い、
この基板表面に、上記トレンチを形成する工程と、
上記基板表面における、上記トレンチの開口部と離間した位置に、凹部を形成する工程と、
上記凹部の底面または側面にイオンを照射して、上記第2半導体層の一部を形成する工程と、
を有することを特徴とする、半導体装置の製造方法。
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JP2008333530A JP5721308B2 (ja) | 2008-03-26 | 2008-12-26 | 半導体装置 |
US12/934,012 US8283721B2 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device, and method for manufacturing the same |
PCT/JP2009/056109 WO2009119735A1 (ja) | 2008-03-26 | 2009-03-26 | 半導体装置およびその製造方法 |
DE202009019196.6U DE202009019196U1 (de) | 2008-03-26 | 2009-03-26 | Halbleitervorrichtung |
EP09724334A EP2276066A4 (en) | 2008-03-26 | 2009-03-26 | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
EP15181700.4A EP2966690B1 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device and method for manufacturing the same |
CN2009801104895A CN101981701B (zh) | 2008-03-26 | 2009-03-26 | 半导体装置及其制造方法 |
EP24169273.0A EP4372824A2 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device, and method for manufacturing the same |
EP23207308.0A EP4297097A3 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device, and method for manufacturing the same |
EP22179241.9A EP4095928A1 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device and method for manufacturing the same |
EP20152069.9A EP3660925A1 (en) | 2008-03-26 | 2009-03-26 | Semiconductor device, and method for manufacturing the same |
US13/614,510 US9166038B2 (en) | 2008-03-26 | 2012-09-13 | Semiconductor device, and method for manufacturing the same |
US14/854,752 US9496387B2 (en) | 2008-03-26 | 2015-09-15 | Semiconductor device, and method for manufacturing the same |
US15/332,624 US10290733B2 (en) | 2008-03-26 | 2016-10-24 | Semiconductor device, and method for manufacturing the same |
US16/379,038 US10686067B2 (en) | 2008-03-26 | 2019-04-09 | Semiconductor device, and method for manufacturing the same |
US15/930,784 US11127851B2 (en) | 2008-03-26 | 2020-05-13 | Semiconductor device, and method for manufacturing the same |
US17/410,661 US12034073B2 (en) | 2008-03-26 | 2021-08-24 | Semiconductor device, and method for manufacturing the same |
US18/466,875 US12009420B2 (en) | 2008-03-26 | 2023-09-14 | Semiconductor device, and method for manufacturing the same |
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