JPWO2015072052A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2015072052A1 JPWO2015072052A1 JP2015547604A JP2015547604A JPWO2015072052A1 JP WO2015072052 A1 JPWO2015072052 A1 JP WO2015072052A1 JP 2015547604 A JP2015547604 A JP 2015547604A JP 2015547604 A JP2015547604 A JP 2015547604A JP WO2015072052 A1 JPWO2015072052 A1 JP WO2015072052A1
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- 230000005684 electric field Effects 0.000 claims abstract description 169
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims description 99
- 239000012535 impurity Substances 0.000 claims description 49
- 230000001681 protective effect Effects 0.000 claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000002040 relaxant effect Effects 0.000 description 6
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000004088 simulation Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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Abstract
Description
まず、この発明の実施の形態1における半導体装置の素子構造を説明する。図1は、この発明の実施の形態1に係る半導体装置を示す上面図であり、図2は、この発明の実施の形態1に係る半導体装置を示す断面図である。尚、図2は、図1の上面図におけるAA断面図に相当し、MOSFETセルの形成領域を示している。本実施の形態では、半導体装置の一例として、絶縁ゲート型の炭化珪素半導体装置であるトレンチゲート型のMOSFETを示す。
図16は、本実施の形態2に係る半導体装置を示す断面図である。本実施の形態に係る半導体装置は、トレンチ7の底部に上面が接するように第2導電型の保護拡散領域8を備えたことを特徴とする。それ以外については、実施の形態1と同様である。本実施の形態によれば、トレンチ7底部のゲート絶縁膜9に印加される電界をより緩和する効果が得られる。
図17は、本実施の形態3に係る半導体装置を示す断面図である。本実施の形態に係る半導体装置は、ベース領域4及び電界緩和ウェル25の下方に、第1導電型の電流拡散層5を備えたことを特徴とする。それ以外については、実施の形態1または2と同様である。本実施の形態によれば、オン抵抗の増大を抑制できる効果がより大きく得られる。
図19は、本実施の形態4に係る半導体装置を示す断面図である。本実施の形態に係る半導体装置は、横方向に濃度プロファイルを有する電流拡散層5を備えたことを特徴とする。それ以外については、実施の形態1から3と同様である。本実施の形態によれば、オン抵抗の増大を抑制できる効果がより大きく得られる。
図20は、本実施の形態5に係る半導体装置を示す断面図である。本実施の形態に係る半導体装置は、電流拡散層5がトレンチ7側壁と離間して形成されていることを特徴とする。それ以外については、実施の形態1から4と同様である。本実施の形態によれば、ゲート絶縁膜9の電界をより緩和する効果が得られる。
Claims (11)
- 基板と、
前記基板上に設けられた第1導電型のドリフト層と、
前記ドリフト層上に形成された第2導電型のベース領域と、
前記ベース領域内に位置する第1導電型のソース領域と、
前記ベース領域と前記ソース領域とを貫通するトレンチと、
前記トレンチと離間して、前記ベース領域より深い位置に形成された第2導電型の電界緩和ウェルと、
前記トレンチの内壁に形成されたゲート絶縁膜と、
前記トレンチ内に前記ゲート絶縁膜を介して埋め込まれたゲート電極と、
を備え、
前記電界緩和ウェルは、横方向の幅が底部から上部に向かって拡がる形状である、
半導体装置。 - 前記電界緩和ウェルは、側面の少なくとも一部がテーパー形状であること
を特徴とする請求項1に記載の半導体装置。 - 前記電界緩和ウェルは、底面と側面とのなす角度が110°以上160°以下であるテーパー形状を有すること
を特徴とする請求項2に記載の半導体装置。 - 前記トレンチの底部の下方に形成された第2導電型の保護拡散領域を備えたこと
を特徴とする請求項1から3のいずれか1項に記載の半導体装置。 - 前記電界緩和ウェルは、底部が前記保護拡散領域の底部より浅い位置に形成されていること
を特徴とする請求項4に記載の半導体装置。 - 前記ベース領域及び前記電界緩和ウェルの下方に形成され、前記ドリフト層よりも高い不純物濃度を有する第1導電型の電流拡散層を備えたこと
を特徴とする請求項1から5のいずれか1項に記載の半導体装置。 - 前記電流拡散層は、底面が、前記トレンチの底部より浅い位置において前記トレンチの側壁に接するように形成されていること
を特徴とする請求項6に記載の半導体装置。 - 前記電流拡散層は、前記トレンチの側壁から離間して形成されていること
を特徴とする請求項6に記載の半導体装置。 - 前記電流拡散層は、前記トレンチの側壁に近い領域より遠い領域において不純物濃度が高いこと
を特徴とする請求項6から8のいずれか1項に記載の半導体装置。 - 前記トレンチと離間して、横方向の幅が底部から上部に向かって拡がる形状の掘り込み部を備え、
前記電界緩和ウェルが前記掘り込み部の下方に位置すること
を特徴とする請求項1から9のいずれか1項に記載の半導体装置。 - 前記基板は炭化珪素からなること
を特徴とする請求項1から10のいずれか1項に記載の半導体装置。
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JP6485299B2 (ja) * | 2015-06-05 | 2019-03-20 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
JP6490305B2 (ja) * | 2016-04-27 | 2019-03-27 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP6625938B2 (ja) * | 2016-07-22 | 2019-12-25 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
CN112271218A (zh) * | 2020-10-16 | 2021-01-26 | 湖南国芯半导体科技有限公司 | 功率半导体器件及其制备方法 |
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JP2013214658A (ja) * | 2012-04-03 | 2013-10-17 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
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JP6290526B2 (ja) * | 2011-08-24 | 2018-03-07 | ローム株式会社 | 半導体装置およびその製造方法 |
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JP2013145770A (ja) * | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP5807597B2 (ja) * | 2012-03-26 | 2015-11-10 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
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JPH08250731A (ja) * | 1994-12-30 | 1996-09-27 | Siliconix Inc | 高いブレークダウン電圧と低いオン抵抗を兼ね備えたトレンチ型mosfet |
JP2009141243A (ja) * | 2007-12-10 | 2009-06-25 | Toshiba Corp | 半導体装置 |
JP2009260253A (ja) * | 2008-03-26 | 2009-11-05 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2013214658A (ja) * | 2012-04-03 | 2013-10-17 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
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