JP2009059421A - 固体メモリ - Google Patents
固体メモリ Download PDFInfo
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- JP2009059421A JP2009059421A JP2007225978A JP2007225978A JP2009059421A JP 2009059421 A JP2009059421 A JP 2009059421A JP 2007225978 A JP2007225978 A JP 2007225978A JP 2007225978 A JP2007225978 A JP 2007225978A JP 2009059421 A JP2009059421 A JP 2009059421A
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- Prior art keywords
- thin film
- solid
- recording
- film containing
- state memory
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- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- 238000005191 phase separation Methods 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 3
- 239000007787 solid Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 150000001786 chalcogen compounds Chemical class 0.000 abstract description 10
- 230000009466 transformation Effects 0.000 abstract description 2
- 230000007704 transition Effects 0.000 abstract description 2
- 230000000704 physical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009812 interlayer coupling reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- BPDQXJZWVBPDSN-UHFFFAOYSA-N tellanylideneantimony;tellurium Chemical compound [Te].[Te]=[Sb].[Te]=[Sb] BPDQXJZWVBPDSN-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
- H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/18—Selenium or tellurium only, apart from doping materials or other impurities
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Semiconductor Memories (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
【解決手段】本願発明は、Sbを含む薄膜とTeを含む薄膜を超格子構造により固体メモリを作成し、上記課題を解決し、繰り返し記録消去回数を1015回とした。
【選択図】図4
Description
実施例1と同様に一般的な自己抵抗加熱型の基本構成で相変化RAMを作成した。記録膜にはSb2Teの一層膜を20ナノメートル形成した。セルと呼ばれる大きさは100X100nm2である。このデバイスに、電圧をプログラム的に与えて、記録及び消去時の電流値を測定した。
Claims (5)
- 固体メモリであって、物質の相分離に起因して電気特性が変化するものであり、データの記録及び再生材料が該相分離により該電気特性に変化が発生する人工的な超格子の積層構造により構成されていることを特徴とする固体メモリ。
- 請求項1に記載の固体メモリにおいて、前記積層構造は、アンチモン(Sb)原子を含む合金薄膜とテルル(Te)原子を含む合金薄膜とから構成されることを特徴とする固体メモリ。
- 請求項1又は2に記載の固体メモリにおいて、前記薄膜の膜厚は、0.3nm以上2nm以下であることを特徴とする固体メモリ。
- 請求項2に記載の固体メモリにおいて、前記アンチモン(Sb)原子を含む合金薄膜と前記テルル(Te)を含む合金薄膜との界面で一次元的な異方性分離状態を形成することによりデータを記録することを特徴とする固体メモリ
- 請求項2に記載の固体メモリにおいて、前記アンチモン(Sb)原子を含む合金薄膜と前記テルル(Te)を含む合金薄膜との界面で一次元的な異方性分離した状態を再結合させてデータを消去することを特徴とする固体メモリ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225978A JP4595125B2 (ja) | 2007-08-31 | 2007-08-31 | 固体メモリ |
KR1020107006527A KR101072748B1 (ko) | 2007-08-31 | 2008-06-13 | 고체 메모리 |
PCT/JP2008/060856 WO2009028249A1 (ja) | 2007-08-31 | 2008-06-13 | 固体メモリ |
US12/733,295 US20100207090A1 (en) | 2007-08-31 | 2008-06-13 | Solid memory |
TW97133302A TWI470784B (zh) | 2007-08-31 | 2008-08-29 | 固態記憶體 |
US13/923,447 US9224460B2 (en) | 2007-08-31 | 2013-06-21 | Solid memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225978A JP4595125B2 (ja) | 2007-08-31 | 2007-08-31 | 固体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009059421A true JP2009059421A (ja) | 2009-03-19 |
JP4595125B2 JP4595125B2 (ja) | 2010-12-08 |
Family
ID=40386978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007225978A Active JP4595125B2 (ja) | 2007-08-31 | 2007-08-31 | 固体メモリ |
Country Status (5)
Country | Link |
---|---|
US (2) | US20100207090A1 (ja) |
JP (1) | JP4595125B2 (ja) |
KR (1) | KR101072748B1 (ja) |
TW (1) | TWI470784B (ja) |
WO (1) | WO2009028249A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101924181A (zh) * | 2009-06-11 | 2010-12-22 | 尔必达存储器株式会社 | 固态存储器、数据处理***和数据处理装置 |
JP2012219330A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 相変化メモリの形成装置、及び相変化メモリの形成方法 |
JP2013055257A (ja) * | 2011-09-05 | 2013-03-21 | Ulvac Japan Ltd | 相変化メモリの形成方法、及び相変化メモリの形成装置 |
JP2014175528A (ja) * | 2013-03-11 | 2014-09-22 | National Institute Of Advanced Industrial & Technology | 相変化メモリおよび半導体記録再生装置 |
JP2015072977A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社日立製作所 | 不揮発性半導体記憶装置及びその製造方法 |
CN108598256A (zh) * | 2015-04-27 | 2018-09-28 | 江苏理工学院 | 一种用于相变存储器的Ge/Sb类超晶格相变薄膜材料的制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4595125B2 (ja) | 2007-08-31 | 2010-12-08 | 独立行政法人産業技術総合研究所 | 固体メモリ |
JP4621897B2 (ja) | 2007-08-31 | 2011-01-26 | 独立行政法人産業技術総合研究所 | 固体メモリ |
JP4599598B2 (ja) * | 2009-03-04 | 2010-12-15 | 独立行政法人産業技術総合研究所 | 固体メモリ |
JP2010263131A (ja) * | 2009-05-08 | 2010-11-18 | Elpida Memory Inc | 超格子デバイス及びその製造方法、並びに、超格子デバイスを含む固体メモリ、データ処理システム及びデータ処理装置 |
JP5957375B2 (ja) * | 2012-11-30 | 2016-07-27 | 株式会社日立製作所 | 相変化メモリ |
CN104795494B (zh) * | 2015-04-27 | 2018-04-13 | 江苏理工学院 | 用于高速相变存储器的GeTe/Sb类超晶格相变薄膜材料及其制备方法 |
US10580976B2 (en) | 2018-03-19 | 2020-03-03 | Sandisk Technologies Llc | Three-dimensional phase change memory device having a laterally constricted element and method of making the same |
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JP4621897B2 (ja) * | 2007-08-31 | 2011-01-26 | 独立行政法人産業技術総合研究所 | 固体メモリ |
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JP2010171196A (ja) * | 2009-01-22 | 2010-08-05 | Elpida Memory Inc | 固体メモリ及び半導体装置 |
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CN101924181A (zh) * | 2009-06-11 | 2010-12-22 | 尔必达存储器株式会社 | 固态存储器、数据处理***和数据处理装置 |
JP2012219330A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 相変化メモリの形成装置、及び相変化メモリの形成方法 |
JP2013055257A (ja) * | 2011-09-05 | 2013-03-21 | Ulvac Japan Ltd | 相変化メモリの形成方法、及び相変化メモリの形成装置 |
JP2014175528A (ja) * | 2013-03-11 | 2014-09-22 | National Institute Of Advanced Industrial & Technology | 相変化メモリおよび半導体記録再生装置 |
JP2015072977A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社日立製作所 | 不揮発性半導体記憶装置及びその製造方法 |
CN108598256A (zh) * | 2015-04-27 | 2018-09-28 | 江苏理工学院 | 一种用于相变存储器的Ge/Sb类超晶格相变薄膜材料的制备方法 |
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WO2009028249A1 (ja) | 2009-03-05 |
TW200931658A (en) | 2009-07-16 |
US20130286725A1 (en) | 2013-10-31 |
US20100207090A1 (en) | 2010-08-19 |
TWI470784B (zh) | 2015-01-21 |
KR20100047330A (ko) | 2010-05-07 |
JP4595125B2 (ja) | 2010-12-08 |
US9224460B2 (en) | 2015-12-29 |
KR101072748B1 (ko) | 2011-10-11 |
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