JP4599598B2 - 固体メモリ - Google Patents
固体メモリ Download PDFInfo
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- JP4599598B2 JP4599598B2 JP2009051072A JP2009051072A JP4599598B2 JP 4599598 B2 JP4599598 B2 JP 4599598B2 JP 2009051072 A JP2009051072 A JP 2009051072A JP 2009051072 A JP2009051072 A JP 2009051072A JP 4599598 B2 JP4599598 B2 JP 4599598B2
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- 239000007787 solid Substances 0.000 title claims description 5
- 230000008859 change Effects 0.000 claims description 34
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910018289 SbBi Inorganic materials 0.000 claims description 2
- 238000005191 phase separation Methods 0.000 abstract description 21
- 230000004044 response Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 136
- 239000010408 film Substances 0.000 description 49
- 239000013078 crystal Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 150000001786 chalcogen compounds Chemical class 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910001215 Te alloy Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 229910005872 GeSb Inorganic materials 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
- H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Description
一般的な自己抵抗加熱型の基本構成により、シリコン基板上に相分離RAMを作製した。
実施例1と同様に一般的な自己抵抗加熱型の基本構成で相変化RAMを作製した。記録膜にはGeSb5の1層膜を、GeとSbのターゲットを複数同時に用いて成膜した。膜厚は20.00nm形成した。セルと呼ばれる大きさは実施例と同じ100×100nm2である。上下の電極等はすべて実施例と同じくして比較サンプルを作製した。
Claims (5)
- 電気的パルスを与えることによってデータを記録又は消去する記録層を備える固体メモリであって、
上記記録層は、Sb原子を含む層とGe原子を含む層とが層間分離することにより電気抵抗値が変化する積層構造を含んでおり、
上記積層構造では、上記Sb原子を含む層と上記Ge原子を含む層とは、Sb原子とGe原子とが隣接するように、超格子構造を構成して積層されており、
上記Sb原子を含む層は、Sb単体膜、またはSbTi、SbBi、もしくはSbAsの合金膜であり、
上記Ge原子を含む層は、Ge単体膜、またはGeTi、GeSi、GeC、もしくはGeAlの合金膜であることを特徴とする固体メモリ。 - 上記積層構造では、上記Sb原子を含む層と上記Ge原子を含む層とが隣接して配置されていることを特徴とする請求項1に記載の固体メモリ。
- 上記Sb原子を含む層の層厚は、上記Ge原子を含む層の層厚の3倍以上20倍以下であることを特徴とする請求項1または2に記載の固体メモリ。
- 上記記録層の上下に各々配置された電極を備えており、
上記電極から上記記録層に電気的パルスを与えて、当該記録層を5%以下の体積変化率で上下方向に体積変化させることによって、データを記録又は消去することを特徴とする請求項1から3のいずれか1項に記載の固体メモリ。 - 上記Ge原子を含む層は、Ge原子が5原子以下の原子層からなり、
上記Sb原子を含む層は、Sb原子が奇数の原子層からなることを特徴とする請求項1から4のいずれか1項に記載の固体メモリ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009051072A JP4599598B2 (ja) | 2009-03-04 | 2009-03-04 | 固体メモリ |
PCT/JP2010/052860 WO2010101055A1 (ja) | 2009-03-04 | 2010-02-24 | 固体メモリ |
US13/138,545 US9129673B2 (en) | 2009-03-04 | 2010-02-24 | Superlattice recording layer for a phase change memory |
KR1020117022655A KR101249631B1 (ko) | 2009-03-04 | 2010-02-24 | 고체 메모리 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009051072A JP4599598B2 (ja) | 2009-03-04 | 2009-03-04 | 固体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010206017A JP2010206017A (ja) | 2010-09-16 |
JP4599598B2 true JP4599598B2 (ja) | 2010-12-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009051072A Active JP4599598B2 (ja) | 2009-03-04 | 2009-03-04 | 固体メモリ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9129673B2 (ja) |
JP (1) | JP4599598B2 (ja) |
KR (1) | KR101249631B1 (ja) |
WO (1) | WO2010101055A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020012916A1 (ja) | 2018-07-10 | 2020-01-16 | 国立研究開発法人産業技術総合研究所 | 積層構造体及びその製造方法並びに半導体デバイス |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI469408B (zh) * | 2012-05-07 | 2015-01-11 | Univ Feng Chia | 超薄與多層結構相變化記憶體元件 |
US8729519B2 (en) | 2012-10-23 | 2014-05-20 | Micron Technology, Inc. | Memory constructions |
US9812639B2 (en) | 2014-09-10 | 2017-11-07 | Toshiba Memory Corporation | Non-volatile memory device |
US9601689B2 (en) | 2014-09-11 | 2017-03-21 | Kabushiki Kaisha Toshiba | Memory device |
US9893280B2 (en) | 2015-02-06 | 2018-02-13 | Toshiba Memory Corporation | Memory device |
US9281473B1 (en) | 2015-03-13 | 2016-03-08 | Kabushiki Kaisha Toshiba | Memory device |
US10424731B2 (en) * | 2015-03-13 | 2019-09-24 | Toshiba Memory Corporation | Memory device |
US9564214B2 (en) | 2015-03-13 | 2017-02-07 | Kabushiki Kaisha Toshiba | Memory device |
CN104795494B (zh) * | 2015-04-27 | 2018-04-13 | 江苏理工学院 | 用于高速相变存储器的GeTe/Sb类超晶格相变薄膜材料及其制备方法 |
CN104934533B (zh) * | 2015-04-27 | 2018-04-13 | 江苏理工学院 | 用于高速低功耗相变存储器的Ge/Sb类超晶格相变薄膜材料及其制备方法 |
CN106654005B (zh) * | 2015-10-30 | 2019-04-16 | 中国科学院上海微***与信息技术研究所 | 相变材料层、相变存储器单元及其制备方法 |
CN108321295A (zh) * | 2015-12-07 | 2018-07-24 | 江苏理工学院 | 一种用于相变存储器的Si/Sb类超晶格相变薄膜材料 |
CN105514271B (zh) * | 2015-12-31 | 2018-06-08 | 江苏理工学院 | 用于相变存储器的铒掺杂Sn15Sb85基相变薄膜材料及薄膜制备方法 |
CN106601908A (zh) * | 2016-12-16 | 2017-04-26 | 同济大学 | 一种锑锗多层纳米复合相变材料及其制备和应用 |
KR20200104670A (ko) * | 2019-02-27 | 2020-09-04 | 삼성전자주식회사 | 티타늄계 비정질 합금 및 이를 적용한 상변화 메모리소자 |
JP2020155569A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 記憶装置 |
CN110571331B (zh) * | 2019-08-30 | 2021-01-01 | 华中科技大学 | 抗应力的超晶格相变存储单元、其制备方法与相变存储器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010050117A1 (ja) * | 2008-10-30 | 2010-05-06 | 独立行政法人産業技術総合研究所 | 固体メモリ |
WO2010050118A1 (ja) * | 2008-10-30 | 2010-05-06 | 独立行政法人産業技術総合研究所 | 固体メモリの製造方法 |
Family Cites Families (7)
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US6809401B2 (en) | 2000-10-27 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
JP4025527B2 (ja) | 2000-10-27 | 2007-12-19 | 松下電器産業株式会社 | メモリ、書き込み装置、読み出し装置およびその方法 |
JP3999549B2 (ja) * | 2002-04-01 | 2007-10-31 | 株式会社リコー | 相変化材料素子および半導体メモリ |
US7718987B2 (en) * | 2004-02-19 | 2010-05-18 | Agency For Science, Technology And Research | Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers |
JP4466315B2 (ja) | 2004-10-21 | 2010-05-26 | 株式会社日立製作所 | 相変化メモリ |
JP4621897B2 (ja) * | 2007-08-31 | 2011-01-26 | 独立行政法人産業技術総合研究所 | 固体メモリ |
JP4595125B2 (ja) * | 2007-08-31 | 2010-12-08 | 独立行政法人産業技術総合研究所 | 固体メモリ |
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2009
- 2009-03-04 JP JP2009051072A patent/JP4599598B2/ja active Active
-
2010
- 2010-02-24 US US13/138,545 patent/US9129673B2/en active Active
- 2010-02-24 KR KR1020117022655A patent/KR101249631B1/ko active IP Right Grant
- 2010-02-24 WO PCT/JP2010/052860 patent/WO2010101055A1/ja active Application Filing
Patent Citations (2)
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WO2010050117A1 (ja) * | 2008-10-30 | 2010-05-06 | 独立行政法人産業技術総合研究所 | 固体メモリ |
WO2010050118A1 (ja) * | 2008-10-30 | 2010-05-06 | 独立行政法人産業技術総合研究所 | 固体メモリの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020012916A1 (ja) | 2018-07-10 | 2020-01-16 | 国立研究開発法人産業技術総合研究所 | 積層構造体及びその製造方法並びに半導体デバイス |
Also Published As
Publication number | Publication date |
---|---|
KR101249631B1 (ko) | 2013-04-01 |
WO2010101055A1 (ja) | 2010-09-10 |
JP2010206017A (ja) | 2010-09-16 |
US9129673B2 (en) | 2015-09-08 |
KR20110127242A (ko) | 2011-11-24 |
US20110315942A1 (en) | 2011-12-29 |
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