JP4635236B2 - 固体メモリの製造方法 - Google Patents
固体メモリの製造方法 Download PDFInfo
- Publication number
- JP4635236B2 JP4635236B2 JP2008280134A JP2008280134A JP4635236B2 JP 4635236 B2 JP4635236 B2 JP 4635236B2 JP 2008280134 A JP2008280134 A JP 2008280134A JP 2008280134 A JP2008280134 A JP 2008280134A JP 4635236 B2 JP4635236 B2 JP 4635236B2
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- solid
- state memory
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 230000009466 transformation Effects 0.000 claims description 21
- 229910052787 antimony Inorganic materials 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 14
- 238000010030 laminating Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 229910005900 GeTe Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 66
- 239000010408 film Substances 0.000 description 44
- 229910052714 tellurium Inorganic materials 0.000 description 26
- 239000013078 crystal Substances 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 150000001786 chalcogen compounds Chemical class 0.000 description 5
- 229910001215 Te alloy Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910017139 AlTe Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Manufacturing Optical Record Carriers (AREA)
Description
一般的な自己抵抗加熱型の基本構成により相変化RAMを作製した。
実施例1と同様に一般的な自己抵抗加熱型の基本構成により相変化RAMを作製した。成膜時の基板温度を150℃として、記録膜にはGe2Sb7Te8の単層膜を25nm形成した。セルの大きさは、100nm×100nmであった。
Claims (2)
- 相変態により電気特性が変化する記録層を備える固体メモリの製造方法であり、
固体状態間で相変態を生じる膜を2以上隣接して積層させて超格子構造を構成させることにより、前記記録層を形成する記録層形成工程を含み、
前記記録層形成工程を、記録層を構成する前記各層の結晶化相転移温度の中で最も高い温度以上、且つ当該各層の融点の中で一番低い温度以下の範囲内で行い、
前記記録層は、Ge及びSbを含み、Teを主成分としていることを特徴とする固体メモリの製造方法。 - 前記記録層形成工程では、GeTeからなる膜と、Sb2Te3からなる膜とをそれぞれ隣接して積層させることにより、前記記録層を形成することを特徴とする請求項1に記載の固体メモリの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008280134A JP4635236B2 (ja) | 2008-10-30 | 2008-10-30 | 固体メモリの製造方法 |
US12/998,482 US8530314B2 (en) | 2008-10-30 | 2009-09-28 | Solid-state memory manufacturing method |
PCT/JP2009/004938 WO2010050118A1 (ja) | 2008-10-30 | 2009-09-28 | 固体メモリの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008280134A JP4635236B2 (ja) | 2008-10-30 | 2008-10-30 | 固体メモリの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010109177A JP2010109177A (ja) | 2010-05-13 |
JP4635236B2 true JP4635236B2 (ja) | 2011-02-23 |
Family
ID=42128492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008280134A Expired - Fee Related JP4635236B2 (ja) | 2008-10-30 | 2008-10-30 | 固体メモリの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8530314B2 (ja) |
JP (1) | JP4635236B2 (ja) |
WO (1) | WO2010050118A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160086402A (ko) | 2013-11-15 | 2016-07-19 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 스핀 전자 메모리, 정보 기록 방법 및 정보 재생 방법 |
KR20160143787A (ko) | 2014-05-12 | 2016-12-14 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법 |
US10543545B2 (en) | 2015-03-16 | 2020-01-28 | National Institute Of Advanced Industrial Science And Technology | Method of initializing multiferroic element |
WO2023062918A1 (ja) | 2021-10-15 | 2023-04-20 | 国立研究開発法人産業技術総合研究所 | 結晶化積層構造体の製造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4599598B2 (ja) * | 2009-03-04 | 2010-12-15 | 独立行政法人産業技術総合研究所 | 固体メモリ |
US8946666B2 (en) * | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
JP5705689B2 (ja) * | 2011-09-05 | 2015-04-22 | 株式会社アルバック | 相変化メモリの形成方法、及び相変化メモリの形成装置 |
US8729519B2 (en) | 2012-10-23 | 2014-05-20 | Micron Technology, Inc. | Memory constructions |
CN103855301B (zh) * | 2012-12-05 | 2016-09-14 | 中国科学院上海微***与信息技术研究所 | 多级电阻转换存储单元及存储器 |
CN104934533B (zh) * | 2015-04-27 | 2018-04-13 | 江苏理工学院 | 用于高速低功耗相变存储器的Ge/Sb类超晶格相变薄膜材料及其制备方法 |
US9917252B2 (en) | 2015-06-19 | 2018-03-13 | Macronix International Co., Ltd. | GaSbGe phase change memory materials |
US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
US11264568B2 (en) | 2016-07-29 | 2022-03-01 | Micron Technology, Inc. | Textured memory cell structures |
US10050196B1 (en) | 2017-05-04 | 2018-08-14 | Macronix International Co., Ltd. | Dielectric doped, Sb-rich GST phase change memory |
US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
CN113611798B (zh) * | 2021-07-02 | 2023-08-29 | 深圳大学 | 多层相变薄膜及其相变存储器单元的制备方法 |
Citations (2)
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WO1980001411A1 (en) * | 1978-12-29 | 1980-07-10 | Hughes Aircraft Co | Automatic blast actuated positive release missile detent |
JP2008235863A (ja) * | 2006-12-21 | 2008-10-02 | Qimonda North America Corp | ピラー相変化メモリセル |
Family Cites Families (7)
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JPH066393B2 (ja) * | 1984-03-07 | 1994-01-26 | 株式会社日立製作所 | 情報の記録・消去方法 |
US6716514B2 (en) * | 1998-01-26 | 2004-04-06 | The Procter & Gamble Company | Disposable article with enhanced texture |
US6809401B2 (en) | 2000-10-27 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
JP4025527B2 (ja) | 2000-10-27 | 2007-12-19 | 松下電器産業株式会社 | メモリ、書き込み装置、読み出し装置およびその方法 |
US7718987B2 (en) * | 2004-02-19 | 2010-05-18 | Agency For Science, Technology And Research | Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers |
WO2008001411A1 (fr) * | 2006-06-23 | 2008-01-03 | Renesas Technology Corp. | Procédé de production de dispositif mémoire à semi-conducteur |
JP5023072B2 (ja) * | 2006-11-30 | 2012-09-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
-
2008
- 2008-10-30 JP JP2008280134A patent/JP4635236B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-28 WO PCT/JP2009/004938 patent/WO2010050118A1/ja active Application Filing
- 2009-09-28 US US12/998,482 patent/US8530314B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001411A1 (en) * | 1978-12-29 | 1980-07-10 | Hughes Aircraft Co | Automatic blast actuated positive release missile detent |
JP2008235863A (ja) * | 2006-12-21 | 2008-10-02 | Qimonda North America Corp | ピラー相変化メモリセル |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160086402A (ko) | 2013-11-15 | 2016-07-19 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 스핀 전자 메모리, 정보 기록 방법 및 정보 재생 방법 |
US9984745B2 (en) | 2013-11-15 | 2018-05-29 | National Institute Of Advanced Industrial Science And Technology | Spin electronic memory, information recording method and information reproducing method |
KR20160143787A (ko) | 2014-05-12 | 2016-12-14 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법 |
US10090460B2 (en) | 2014-05-12 | 2018-10-02 | National Institute Of Advanced Industrial Science & Technology | Crystal orientation layer laminated structure, electronic memory and method for manufacturing crystal orientation layer laminated structure |
US10543545B2 (en) | 2015-03-16 | 2020-01-28 | National Institute Of Advanced Industrial Science And Technology | Method of initializing multiferroic element |
WO2023062918A1 (ja) | 2021-10-15 | 2023-04-20 | 国立研究開発法人産業技術総合研究所 | 結晶化積層構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010050118A1 (ja) | 2010-05-06 |
US8530314B2 (en) | 2013-09-10 |
US20110207284A1 (en) | 2011-08-25 |
JP2010109177A (ja) | 2010-05-13 |
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