JP2009016876A - 半導体要素 - Google Patents
半導体要素 Download PDFInfo
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- JP2009016876A JP2009016876A JP2008265103A JP2008265103A JP2009016876A JP 2009016876 A JP2009016876 A JP 2009016876A JP 2008265103 A JP2008265103 A JP 2008265103A JP 2008265103 A JP2008265103 A JP 2008265103A JP 2009016876 A JP2009016876 A JP 2009016876A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000010410 layer Substances 0.000 claims description 71
- 239000002344 surface layer Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
【解決手段】半導体要素は第1の導電型式の電気接点接続部を含む絶縁外層(1)を含む。これらの接続部は、その接続部の少なくとも1つが第1の導電型式である絶縁面層より下位に位置づけられた接点領域(5、6)に接続されている。上記接点領域(5、6)の少なくとも1つおよび上記接点領域(5、6)の間に配置され相互に対して相違する導電型式の材料の2枚の層からなる別の領域(9、10)が第2の導電型式の材料の層(8)によって包囲されている。この第2の層(8)の方は面層から遠い側において少なくとも絶縁層(11)によって被覆されている。
【選択図】図1
Description
Claims (6)
- 複数の電気接点接続部が設けられている絶縁面層(1)を含み、前記複数の電気接点接続部が、前記絶縁面層(1)より下に位置し且つ前記絶縁面層(1)の内向きの面に沿って相互に離れて配置される第一と第二の接点領域(5、6)にそれぞれ接続されている、半導体要素であって、
少なくとも前記第一の接点領域は第1の導電型式材料であり、前記第二の接点領域は第2の導電型式材料であり、前記絶縁面層(1)より下に位置した相互に異なる導電型式材料の二つの層により別の領域が形成され、
前記別の領域は、前記第一と第二の接点領域の間に配置され且つ前記第一と第二の接点領域の各々から配置され、
前記第一と第二の接点領域の少なくとも一方の内向きの面と、前記別の領域の内向きの面とは、前記第2の導電型式材料の覆い層を含み、
前記第2の導電型式材料の覆い層は、前記第2の導電型式材料の覆い層の前記絶縁面層から離れて配置される側上に、内二酸化シリコン絶縁層を含み、前記内二酸化シリコン絶縁層は、cm2当たり約1017のドーピング比を備えて前記第2の導電型式材料の覆い層がより薄くなって前記第2の導電型式材料のドーピングを増加させ且つ半導体要素の寸法を減少させるのに有効である、半導体要素。 - ドレインコネクタを通過する対称線を有し、前記対称線のそれぞれの側に配置される対応して形成されるソース領域とゲート領域と別の領域とを伴う、対称構造である、請求項1に記載の半導体要素。
- 前記内二酸化シリコン絶縁層は、最外方電気接続部の横方向外方に延び且つ前記絶縁面層に接触して、前記第2の導電型式材料の覆い層が前記絶縁面層と前記内二酸化シリコン絶縁層との間に囲まれる、請求項1に記載の半導体要素。
- 複数の電気接点接続部が設けられている絶縁面層(1)を含み、前記複数の電気接点接続部が、前記絶縁面層(1)より下に位置し且つ前記絶縁面層(1)の内向きの面に沿って相互に離れて配置される第一と第二の接点領域(5、6)にそれぞれ接続されている、半導体要素であって、
少なくとも前記第一の接点領域は第1の導電型式材料であり、前記第二の接点領域は第2の導電型式材料であり、
前記絶縁面層(1)より下に位置した相互に異なる導電型式材料の二つの層により別の領域が形成され、
前記別の領域は、前記第一と第二の接点領域の間に配置され且つ前記第一と第二の接点領域の各々から配置され、
前記第一と第二の接点領域の少なくとも一方の内向きの面と、前記別の領域の内向きの面とは、前記第2の導電型式材料の覆い層を含み、
前記覆い層は、前記絶縁面層から離れて配置される当該覆い層の側上に、内二酸化シリコン絶縁層を含み、前記内二酸化シリコン絶縁層は、cm2当たり約1017のドーピング比を備えて前記第2の導電型式材料の覆い層がより薄くなって前記第2の導電型式材料のドーピング比を増加させ且つ半導体要素の寸法を減少させるのに有効であり、
更に、前記第2の導電型式材料の覆い層と前記内二酸化シリコン絶縁層との間に導電材料の追加層を有し、前記追加層は前記第一と第二の接点領域の内向きの面と前記別の領域との上を覆う、半導体要素。 - ドレインコネクタを通過する対称線を有し、前記対称線のそれぞれの側に配置される対応して形成されるソース領域とゲート領域と別の領域とを伴う、対称構造である、請求項4に記載の半導体要素。
- 前記内二酸化シリコン絶縁層は、最外方電気接続部の横方向外方に延び且つ前記絶縁面層に接触して、前記第2の導電型式材料の覆い層が前記絶縁面層と前記内二酸化シリコン絶縁層との間に囲まれる、請求項4に記載の半導体要素。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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SE9901575A SE9901575L (sv) | 1999-05-03 | 1999-05-03 | Halvledarelement |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2000616078A Division JP2002543626A (ja) | 1999-05-03 | 2000-05-03 | 半導体要素 |
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JP2009016876A true JP2009016876A (ja) | 2009-01-22 |
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JP2000616078A Pending JP2002543626A (ja) | 1999-05-03 | 2000-05-03 | 半導体要素 |
JP2008265103A Pending JP2009016876A (ja) | 1999-05-03 | 2008-10-14 | 半導体要素 |
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JP2000616078A Pending JP2002543626A (ja) | 1999-05-03 | 2000-05-03 | 半導体要素 |
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US (1) | US8053835B1 (ja) |
EP (1) | EP1192664A1 (ja) |
JP (2) | JP2002543626A (ja) |
AU (1) | AU4791200A (ja) |
SE (1) | SE9901575L (ja) |
WO (1) | WO2000067329A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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SE533026C2 (sv) * | 2008-04-04 | 2010-06-08 | Klas-Haakan Eklund | Fälteffekttransistor med isolerad gate seriekopplad med en JFET |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
US5059547A (en) * | 1986-12-20 | 1991-10-22 | Kabushiki Kaisha Toshiba | Method of manufacturing double diffused mosfet with potential biases |
JP2896141B2 (ja) * | 1987-02-26 | 1999-05-31 | 株式会社東芝 | 高耐圧半導体素子 |
US5241210A (en) * | 1987-02-26 | 1993-08-31 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
JP2565999B2 (ja) * | 1989-01-12 | 1996-12-18 | 日産自動車株式会社 | 横型絶縁ゲートバイポーラトランジスタ |
US5146298A (en) * | 1991-08-16 | 1992-09-08 | Eklund Klas H | Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor |
US5306652A (en) * | 1991-12-30 | 1994-04-26 | Texas Instruments Incorporated | Lateral double diffused insulated gate field effect transistor fabrication process |
DE4244272A1 (de) * | 1992-12-28 | 1994-06-30 | Daimler Benz Ag | Feldeffektgesteuertes Halbleiterbauelement |
US5313082A (en) * | 1993-02-16 | 1994-05-17 | Power Integrations, Inc. | High voltage MOS transistor with a low on-resistance |
US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
JP3250419B2 (ja) * | 1994-06-15 | 2002-01-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
US5874768A (en) * | 1994-06-15 | 1999-02-23 | Nippondenso Co., Ltd. | Semiconductor device having a high breakdown voltage |
US5482888A (en) * | 1994-08-12 | 1996-01-09 | United Microelectronics Corporation | Method of manufacturing a low resistance, high breakdown voltage, power MOSFET |
EP0702411B1 (en) * | 1994-09-16 | 2002-11-27 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device with a buried MOS-gate structure |
JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
US5731603A (en) * | 1995-08-24 | 1998-03-24 | Kabushiki Kaisha Toshiba | Lateral IGBT |
SE513283C2 (sv) * | 1996-07-26 | 2000-08-14 | Ericsson Telefon Ab L M | MOS-transistorstruktur med utsträckt driftregion |
SE513284C2 (sv) * | 1996-07-26 | 2000-08-14 | Ericsson Telefon Ab L M | Halvledarkomponent med linjär ström-till-spänningskarasterik |
US5943579A (en) * | 1997-02-14 | 1999-08-24 | Micron Technology, Inc. | Method for forming a diffusion region in a semiconductor device |
DE19811604B4 (de) * | 1997-03-18 | 2007-07-12 | Kabushiki Kaisha Toshiba, Kawasaki | Halbleitervorrichtung |
US6211551B1 (en) * | 1997-06-30 | 2001-04-03 | Matsushita Electric Works, Ltd. | Solid-state relay |
JPH1154748A (ja) * | 1997-08-04 | 1999-02-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2000332247A (ja) * | 1999-03-15 | 2000-11-30 | Toshiba Corp | 半導体装置 |
US6303492B1 (en) * | 1999-08-12 | 2001-10-16 | Micron Technology, Inc. | Expanded implantation of contact holes |
JP3602751B2 (ja) * | 1999-09-28 | 2004-12-15 | 株式会社東芝 | 高耐圧半導体装置 |
US6191453B1 (en) * | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
-
1999
- 1999-05-03 SE SE9901575A patent/SE9901575L/ not_active IP Right Cessation
-
2000
- 2000-05-03 JP JP2000616078A patent/JP2002543626A/ja active Pending
- 2000-05-03 US US09/959,744 patent/US8053835B1/en not_active Expired - Fee Related
- 2000-05-03 EP EP00930012A patent/EP1192664A1/en not_active Ceased
- 2000-05-03 AU AU47912/00A patent/AU4791200A/en not_active Abandoned
- 2000-05-03 WO PCT/SE2000/000854 patent/WO2000067329A1/en active Application Filing
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2008
- 2008-10-14 JP JP2008265103A patent/JP2009016876A/ja active Pending
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Publication number | Publication date |
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JP2002543626A (ja) | 2002-12-17 |
WO2000067329A1 (en) | 2000-11-09 |
EP1192664A1 (en) | 2002-04-03 |
SE9901575L (sv) | 2000-11-04 |
SE9901575D0 (sv) | 1999-05-03 |
US8053835B1 (en) | 2011-11-08 |
AU4791200A (en) | 2000-11-17 |
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