SE9901575L - Halvledarelement - Google Patents

Halvledarelement

Info

Publication number
SE9901575L
SE9901575L SE9901575A SE9901575A SE9901575L SE 9901575 L SE9901575 L SE 9901575L SE 9901575 A SE9901575 A SE 9901575A SE 9901575 A SE9901575 A SE 9901575A SE 9901575 L SE9901575 L SE 9901575L
Authority
SE
Sweden
Prior art keywords
layer
connections
conductive type
contact areas
insulating
Prior art date
Application number
SE9901575A
Other languages
Unknown language ( )
English (en)
Other versions
SE9901575D0 (sv
Inventor
Klas-Haakan Eklund
Original Assignee
Eklund Klas Haakan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eklund Klas Haakan filed Critical Eklund Klas Haakan
Priority to SE9901575A priority Critical patent/SE9901575L/sv
Publication of SE9901575D0 publication Critical patent/SE9901575D0/sv
Priority to EP00930012A priority patent/EP1192664A1/en
Priority to AU47912/00A priority patent/AU4791200A/en
Priority to PCT/SE2000/000854 priority patent/WO2000067329A1/en
Priority to JP2000616078A priority patent/JP2002543626A/ja
Priority to US09/959,744 priority patent/US8053835B1/en
Publication of SE9901575L publication Critical patent/SE9901575L/sv
Priority to JP2008265103A priority patent/JP2009016876A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
SE9901575A 1999-05-03 1999-05-03 Halvledarelement SE9901575L (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9901575A SE9901575L (sv) 1999-05-03 1999-05-03 Halvledarelement
EP00930012A EP1192664A1 (en) 1999-05-03 2000-05-03 A semiconductor element
AU47912/00A AU4791200A (en) 1999-05-03 2000-05-03 A semiconductor element
PCT/SE2000/000854 WO2000067329A1 (en) 1999-05-03 2000-05-03 A semiconductor element
JP2000616078A JP2002543626A (ja) 1999-05-03 2000-05-03 半導体要素
US09/959,744 US8053835B1 (en) 1999-05-03 2000-05-03 Lateral semiconductor device comprising two layers of mutually opposite conductivity-type materials between source and drain
JP2008265103A JP2009016876A (ja) 1999-05-03 2008-10-14 半導体要素

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901575A SE9901575L (sv) 1999-05-03 1999-05-03 Halvledarelement

Publications (2)

Publication Number Publication Date
SE9901575D0 SE9901575D0 (sv) 1999-05-03
SE9901575L true SE9901575L (sv) 2000-11-04

Family

ID=20415428

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901575A SE9901575L (sv) 1999-05-03 1999-05-03 Halvledarelement

Country Status (6)

Country Link
US (1) US8053835B1 (sv)
EP (1) EP1192664A1 (sv)
JP (2) JP2002543626A (sv)
AU (1) AU4791200A (sv)
SE (1) SE9901575L (sv)
WO (1) WO2000067329A1 (sv)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852347B2 (ja) * 1980-02-04 1983-11-22 株式会社日立製作所 高耐圧半導体装置
US5059547A (en) * 1986-12-20 1991-10-22 Kabushiki Kaisha Toshiba Method of manufacturing double diffused mosfet with potential biases
JP2896141B2 (ja) * 1987-02-26 1999-05-31 株式会社東芝 高耐圧半導体素子
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JP2565999B2 (ja) * 1989-01-12 1996-12-18 日産自動車株式会社 横型絶縁ゲートバイポーラトランジスタ
US5146298A (en) * 1991-08-16 1992-09-08 Eklund Klas H Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
US5313082A (en) * 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
JP3250419B2 (ja) * 1994-06-15 2002-01-28 株式会社デンソー 半導体装置およびその製造方法
US5874768A (en) * 1994-06-15 1999-02-23 Nippondenso Co., Ltd. Semiconductor device having a high breakdown voltage
US5482888A (en) * 1994-08-12 1996-01-09 United Microelectronics Corporation Method of manufacturing a low resistance, high breakdown voltage, power MOSFET
EP0702411B1 (en) * 1994-09-16 2002-11-27 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device with a buried MOS-gate structure
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
US5731603A (en) * 1995-08-24 1998-03-24 Kabushiki Kaisha Toshiba Lateral IGBT
SE513283C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M MOS-transistorstruktur med utsträckt driftregion
SE513284C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M Halvledarkomponent med linjär ström-till-spänningskarasterik
US5943579A (en) * 1997-02-14 1999-08-24 Micron Technology, Inc. Method for forming a diffusion region in a semiconductor device
DE19811604B4 (de) * 1997-03-18 2007-07-12 Kabushiki Kaisha Toshiba, Kawasaki Halbleitervorrichtung
US6211551B1 (en) * 1997-06-30 2001-04-03 Matsushita Electric Works, Ltd. Solid-state relay
JPH1154748A (ja) * 1997-08-04 1999-02-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000332247A (ja) * 1999-03-15 2000-11-30 Toshiba Corp 半導体装置
US6303492B1 (en) * 1999-08-12 2001-10-16 Micron Technology, Inc. Expanded implantation of contact holes
JP3602751B2 (ja) * 1999-09-28 2004-12-15 株式会社東芝 高耐圧半導体装置
US6191453B1 (en) * 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology

Also Published As

Publication number Publication date
JP2009016876A (ja) 2009-01-22
JP2002543626A (ja) 2002-12-17
WO2000067329A1 (en) 2000-11-09
EP1192664A1 (en) 2002-04-03
SE9901575D0 (sv) 1999-05-03
US8053835B1 (en) 2011-11-08
AU4791200A (en) 2000-11-17

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