JP2008166349A5 - - Google Patents

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Publication number
JP2008166349A5
JP2008166349A5 JP2006351436A JP2006351436A JP2008166349A5 JP 2008166349 A5 JP2008166349 A5 JP 2008166349A5 JP 2006351436 A JP2006351436 A JP 2006351436A JP 2006351436 A JP2006351436 A JP 2006351436A JP 2008166349 A5 JP2008166349 A5 JP 2008166349A5
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JP
Japan
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JP2006351436A
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JP5383974B2 (ja
JP2008166349A (ja
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Priority to JP2006351436A priority Critical patent/JP5383974B2/ja
Priority claimed from JP2006351436A external-priority patent/JP5383974B2/ja
Priority to US11/965,302 priority patent/US8232557B2/en
Publication of JP2008166349A publication Critical patent/JP2008166349A/ja
Publication of JP2008166349A5 publication Critical patent/JP2008166349A5/ja
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JP2006351436A 2006-12-27 2006-12-27 半導体基板および半導体装置 Active JP5383974B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006351436A JP5383974B2 (ja) 2006-12-27 2006-12-27 半導体基板および半導体装置
US11/965,302 US8232557B2 (en) 2006-12-27 2007-12-27 Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006351436A JP5383974B2 (ja) 2006-12-27 2006-12-27 半導体基板および半導体装置

Publications (3)

Publication Number Publication Date
JP2008166349A JP2008166349A (ja) 2008-07-17
JP2008166349A5 true JP2008166349A5 (ja) 2010-02-18
JP5383974B2 JP5383974B2 (ja) 2014-01-08

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JP2006351436A Active JP5383974B2 (ja) 2006-12-27 2006-12-27 半導体基板および半導体装置

Country Status (2)

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US (1) US8232557B2 (ja)
JP (1) JP5383974B2 (ja)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5634681B2 (ja) * 2009-03-26 2014-12-03 住友電工デバイス・イノベーション株式会社 半導体素子
GB2469451A (en) 2009-04-14 2010-10-20 Qinetiq Ltd P-Type Semiconductor Devices
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
WO2011084269A2 (en) * 2009-12-16 2011-07-14 National Semiconductor Corporation Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
US8802516B2 (en) 2010-01-27 2014-08-12 National Semiconductor Corporation Normally-off gallium nitride-based semiconductor devices
JP5668339B2 (ja) 2010-06-30 2015-02-12 住友電気工業株式会社 半導体装置の製造方法
JP2012015303A (ja) 2010-06-30 2012-01-19 Sumitomo Electric Ind Ltd 半導体基板および半導体装置
JP5614130B2 (ja) 2010-06-30 2014-10-29 住友電気工業株式会社 半導体装置の製造方法
JP2012015304A (ja) 2010-06-30 2012-01-19 Sumitomo Electric Ind Ltd 半導体装置
JP2012033575A (ja) 2010-07-28 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置
JP5707767B2 (ja) 2010-07-29 2015-04-30 住友電気工業株式会社 半導体装置
JP2012033708A (ja) 2010-07-30 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
EP2622630A1 (en) * 2010-09-30 2013-08-07 Freescale Semiconductor, Inc. Methods for processing a semiconductor wafer, a semiconductor wafer and a semiconductor device
JP5660373B2 (ja) * 2010-10-29 2015-01-28 サンケン電気株式会社 半導体ウエーハ及び半導体素子
JP5781292B2 (ja) 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
JP5482682B2 (ja) * 2011-02-08 2014-05-07 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、エピタキシャル基板、及びｉｉｉ族窒化物半導体電子デバイスを作製する方法
JP5127978B1 (ja) 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
US10546949B2 (en) 2012-12-26 2020-01-28 Agency For Science, Technology And Research Group III nitride based high electron mobility transistors
JP2014220407A (ja) * 2013-05-09 2014-11-20 ローム株式会社 窒化物半導体素子
US20140335666A1 (en) 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
JP6480244B2 (ja) * 2015-04-10 2019-03-06 株式会社ニューフレアテクノロジー 気相成長方法
US10692839B2 (en) * 2015-06-26 2020-06-23 Intel Corporation GaN devices on engineered silicon substrates
JP6039026B1 (ja) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 ｎ型オーミック電極の製造方法、ならびにｎ型オーミック電極、ｎ型電極およびＩＩＩ族窒化物半導体発光素子
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP6729416B2 (ja) * 2017-01-19 2020-07-22 住友電気工業株式会社 窒化物半導体デバイス及び窒化物半導体デバイスの製造方法
TWI631668B (zh) 2017-11-22 2018-08-01 聯鈞光電股份有限公司 氮化物半導體結構
JP2020177965A (ja) * 2019-04-16 2020-10-29 日機装株式会社 窒化物半導体発光素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242586A (ja) * 1997-02-24 1998-09-11 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体装置およびその製造方法
JP2000277441A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体構造とそれを備えた半導体素子及び結晶成長方法
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP4145108B2 (ja) * 2002-09-20 2008-09-03 シャープ株式会社 ＧａＮＰ結晶の成長方法
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
US7247889B2 (en) * 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
JP2006286741A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置およびその製造方法並びにその半導体装置製造用基板

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