JP2008166349A - 半導体基板および半導体装置 - Google Patents
半導体基板および半導体装置 Download PDFInfo
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- JP2008166349A JP2008166349A JP2006351436A JP2006351436A JP2008166349A JP 2008166349 A JP2008166349 A JP 2008166349A JP 2006351436 A JP2006351436 A JP 2006351436A JP 2006351436 A JP2006351436 A JP 2006351436A JP 2008166349 A JP2008166349 A JP 2008166349A
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- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 123
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 41
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 229910002601 GaN Inorganic materials 0.000 description 35
- 238000000034 method Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明は、Si基板10上に設けられたAlN層12と、AlN層12上に設けられたAlの組成比が0.3以上かつ0.6以下のAlGaN層14と、AlGaN層14上に設けられたGaN層16と、を具備する半導体基板および半導体装置である。本発明よれば、AlGaN層14のAl組成比を0.6以下とすることによりウエハの反りが小さくなり、0.3以上とすることによりGaN層の結晶性が向上する。
【選択図】図4
Description
12 AlN層
14 AlGaN層
16 GaN層
18 電子供給層
Claims (6)
- Si基板上に設けられたAlN層と、
前記AlN層上に設けられたAlの組成比が0.3以上かつ0.6以下のAlGaN層と、
前記AlGaN層上に設けられたGaN層と、を具備することを特徴とする半導体基板。 - 前記AlN層は1000℃以上で形成されてなることを特徴とする請求項1記載の半導体基板。
- Si基板上に設けられたAlN層と、
前記AlN層上に設けられたAlの組成比が0.3以上かつ0.6以下のAlGaN層と、
前記AlGaN層上に設けられたGaN層と、
前記GaN層上に設けられた動作層と、を具備することを特徴とする半導体装置。 - 前記AlN層は1000℃以上で形成されてなることを特徴とする請求項3記載の半導体装置。
- 前記AlN層、前記AlGaN層および前記GaN層は、MOCVD法で成長されてなることを特徴とする請求項3記載の半導体装置。
- 前記半導体装置は、HEMT、LD、LEDおよびVCSELのいずれかであることを特徴とする請求項3記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006351436A JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
US11/965,302 US8232557B2 (en) | 2006-12-27 | 2007-12-27 | Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same |
Applications Claiming Priority (1)
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JP2006351436A JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008166349A true JP2008166349A (ja) | 2008-07-17 |
JP2008166349A5 JP2008166349A5 (ja) | 2010-02-18 |
JP5383974B2 JP5383974B2 (ja) | 2014-01-08 |
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JP2006351436A Active JP5383974B2 (ja) | 2006-12-27 | 2006-12-27 | 半導体基板および半導体装置 |
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US (1) | US8232557B2 (ja) |
JP (1) | JP5383974B2 (ja) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010232377A (ja) * | 2009-03-26 | 2010-10-14 | Sumitomo Electric Device Innovations Inc | 半導体素子 |
JP2012099539A (ja) * | 2010-10-29 | 2012-05-24 | Sanken Electric Co Ltd | 半導体ウエーハ及び半導体素子 |
JP2012164886A (ja) * | 2011-02-08 | 2012-08-30 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体電子デバイス、エピタキシャル基板、及びiii族窒化物半導体電子デバイスを作製する方法 |
US8283240B2 (en) | 2010-06-30 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
JP2013514661A (ja) * | 2009-12-16 | 2013-04-25 | ナショナル セミコンダクター コーポレーション | 半導体基板上のラージエリアガリウム窒化物又は他の窒化物ベース構造のための応力補償 |
US8546813B2 (en) | 2010-06-30 | 2013-10-01 | Sumitomo Electric Industrires, Ltd. | Semiconductor substrate and semiconductor device |
US8629479B2 (en) | 2010-07-29 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
JP2014512681A (ja) * | 2011-09-29 | 2014-05-22 | 東芝テクノセンター株式会社 | 転位密度維持バッファ層を有する発光素子 |
US8742426B2 (en) | 2010-07-28 | 2014-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US8754419B2 (en) | 2010-06-30 | 2014-06-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US8785943B2 (en) | 2011-09-08 | 2014-07-22 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
US8987015B2 (en) | 2010-06-30 | 2015-03-24 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
US8993416B2 (en) | 2010-07-30 | 2015-03-31 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor device |
US9257548B2 (en) | 2010-11-16 | 2016-02-09 | Rohm Co., Ltd. | Nitride semiconductor element and nitride semiconductor package |
US9287369B2 (en) | 2012-03-08 | 2016-03-15 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
JP2016199436A (ja) * | 2015-04-10 | 2016-12-01 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP2018107156A (ja) * | 2016-12-22 | 2018-07-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
JP2018117064A (ja) * | 2017-01-19 | 2018-07-26 | 住友電気工業株式会社 | 窒化物半導体デバイス及び窒化物半導体デバイスの製造方法 |
JP2021166308A (ja) * | 2019-04-16 | 2021-10-14 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
Families Citing this family (12)
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JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
GB2469451A (en) | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | P-Type Semiconductor Devices |
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US8802516B2 (en) | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
EP2622630A1 (en) * | 2010-09-30 | 2013-08-07 | Freescale Semiconductor, Inc. | Methods for processing a semiconductor wafer, a semiconductor wafer and a semiconductor device |
US10546949B2 (en) | 2012-12-26 | 2020-01-28 | Agency For Science, Technology And Research | Group III nitride based high electron mobility transistors |
JP2014220407A (ja) * | 2013-05-09 | 2014-11-20 | ローム株式会社 | 窒化物半導体素子 |
US20140335666A1 (en) | 2013-05-13 | 2014-11-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics |
US10692839B2 (en) * | 2015-06-26 | 2020-06-23 | Intel Corporation | GaN devices on engineered silicon substrates |
JP6039026B1 (ja) * | 2015-09-04 | 2016-12-07 | Dowaエレクトロニクス株式会社 | n型オーミック電極の製造方法、ならびにn型オーミック電極、n型電極およびIII族窒化物半導体発光素子 |
TWI631668B (zh) | 2017-11-22 | 2018-08-01 | 聯鈞光電股份有限公司 | 氮化物半導體結構 |
Citations (5)
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JPH10242586A (ja) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Iii 族窒化物半導体装置およびその製造方法 |
JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
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Patent Citations (5)
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JPH10242586A (ja) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Iii 族窒化物半導体装置およびその製造方法 |
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JP2004119405A (ja) * | 2002-09-20 | 2004-04-15 | Sharp Corp | GaNP結晶の成長方法及びGaNP結晶を備えた半導体装置 |
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Cited By (24)
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JP2010232377A (ja) * | 2009-03-26 | 2010-10-14 | Sumitomo Electric Device Innovations Inc | 半導体素子 |
JP2013514661A (ja) * | 2009-12-16 | 2013-04-25 | ナショナル セミコンダクター コーポレーション | 半導体基板上のラージエリアガリウム窒化物又は他の窒化物ベース構造のための応力補償 |
US8987015B2 (en) | 2010-06-30 | 2015-03-24 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
US8283240B2 (en) | 2010-06-30 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
US8546813B2 (en) | 2010-06-30 | 2013-10-01 | Sumitomo Electric Industrires, Ltd. | Semiconductor substrate and semiconductor device |
US8754419B2 (en) | 2010-06-30 | 2014-06-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US8742426B2 (en) | 2010-07-28 | 2014-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US8629479B2 (en) | 2010-07-29 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US8993416B2 (en) | 2010-07-30 | 2015-03-31 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor device |
JP2012099539A (ja) * | 2010-10-29 | 2012-05-24 | Sanken Electric Co Ltd | 半導体ウエーハ及び半導体素子 |
US9905419B2 (en) | 2010-11-16 | 2018-02-27 | Rohm Co., Ltd. | Nitride semiconductor element and nitride semiconductor package |
US9257548B2 (en) | 2010-11-16 | 2016-02-09 | Rohm Co., Ltd. | Nitride semiconductor element and nitride semiconductor package |
US9472623B2 (en) | 2010-11-16 | 2016-10-18 | Rohm Co., Ltd. | Nitride semiconductor element and nitride semiconductor package |
US10062565B2 (en) | 2010-11-16 | 2018-08-28 | Rohm Co., Ltd. | Nitride semiconductor element and nitride semiconductor package |
JP2012164886A (ja) * | 2011-02-08 | 2012-08-30 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体電子デバイス、エピタキシャル基板、及びiii族窒化物半導体電子デバイスを作製する方法 |
US8785943B2 (en) | 2011-09-08 | 2014-07-22 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
US9130068B2 (en) | 2011-09-29 | 2015-09-08 | Manutius Ip, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
JP2014512681A (ja) * | 2011-09-29 | 2014-05-22 | 東芝テクノセンター株式会社 | 転位密度維持バッファ層を有する発光素子 |
US9287369B2 (en) | 2012-03-08 | 2016-03-15 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
US9508804B2 (en) | 2012-03-08 | 2016-11-29 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
JP2016199436A (ja) * | 2015-04-10 | 2016-12-01 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP2018107156A (ja) * | 2016-12-22 | 2018-07-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
JP2018117064A (ja) * | 2017-01-19 | 2018-07-26 | 住友電気工業株式会社 | 窒化物半導体デバイス及び窒化物半導体デバイスの製造方法 |
JP2021166308A (ja) * | 2019-04-16 | 2021-10-14 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
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US8232557B2 (en) | 2012-07-31 |
JP5383974B2 (ja) | 2014-01-08 |
US20080210949A1 (en) | 2008-09-04 |
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