JP2008160166A - 窒化物系半導体素子の製造方法 - Google Patents
窒化物系半導体素子の製造方法 Download PDFInfo
- Publication number
- JP2008160166A JP2008160166A JP2008076844A JP2008076844A JP2008160166A JP 2008160166 A JP2008160166 A JP 2008160166A JP 2008076844 A JP2008076844 A JP 2008076844A JP 2008076844 A JP2008076844 A JP 2008076844A JP 2008160166 A JP2008160166 A JP 2008160166A
- Authority
- JP
- Japan
- Prior art keywords
- back surface
- nitride
- semiconductor layer
- type gan
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 196
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 238000005498 polishing Methods 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 98
- 238000005530 etching Methods 0.000 abstract description 83
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 35
- 239000013078 crystal Substances 0.000 description 31
- 230000007547 defect Effects 0.000 description 30
- 238000001020 plasma etching Methods 0.000 description 25
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 22
- 239000000460 chlorine Substances 0.000 description 20
- 108091006149 Electron carriers Proteins 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 9
- 238000010306 acid treatment Methods 0.000 description 8
- 238000005253 cladding Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】この窒化物系半導体レーザ素子の製造方法は、ウルツ鉱構造を有するn型GaN基板1の裏面(窒素面)をRIE法によりエッチングする工程と、その後、エッチングされたn型GaN基板1の裏面(窒素面)上に、n側電極8を形成する工程とを備えている。
【選択図】図5
Description
8 n側電極
Claims (5)
- n型の窒化物系半導体層および窒化物系半導体基板のいずれかからなる第1半導体層の上面上に、活性層を含む窒化物半導体層からなる第2半導体層を形成する第1工程と、
前記第1半導体層の裏面を研磨することにより厚み加工する第2工程と、
前記研磨により発生した転位を含む前記第1半導体層の裏面近傍の領域を除去して前記第1半導体層の裏面の転位密度を1×109cm−2以下とする第3工程と、
その後、前記転位を含む前記第1半導体層の裏面近傍の領域が除去された第1半導体層の裏面上に、n側電極を形成する第4工程とを備え、
前記第1半導体層と前記n側電極とのコンタクト抵抗を0.05Ωcm2以下とする、窒化物系半導体素子の製造方法。 - 前記第1半導体層の裏面は、前記第1半導体層の窒素面を含む、請求項1に記載の窒化物系半導体素子の製造方法。
- 前記第3工程により、前記転位密度は、1×106cm−2以下に低減される、請求項1又は2に記載の窒化物系半導体素子の製造方法。
- 前記第3工程により、前記転位を含む前記第1半導体層の裏面近傍の領域が0.5μm以上除去される、請求項1〜3のいずれかに記載の窒化物系半導体素子の製造方法。
- 前記基板は、成長用基板上に成長することを利用して形成されている、請求項1〜4のいずれかに記載の窒化物系半導体素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008076844A JP4180107B2 (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002085085 | 2002-03-26 | ||
JP2008076844A JP4180107B2 (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006348161A Division JP4148976B2 (ja) | 2002-03-26 | 2006-12-25 | 窒化物系半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008160166A true JP2008160166A (ja) | 2008-07-10 |
JP4180107B2 JP4180107B2 (ja) | 2008-11-12 |
Family
ID=28449238
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008076847A Expired - Lifetime JP5025540B2 (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子 |
JP2008076845A Pending JP2008211228A (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子の製造方法 |
JP2008076844A Expired - Lifetime JP4180107B2 (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子の製造方法 |
JP2011226265A Pending JP2012028812A (ja) | 2002-03-26 | 2011-10-13 | 窒化物系半導体素子 |
JP2013162967A Pending JP2013243400A (ja) | 2002-03-26 | 2013-08-06 | 窒化物系半導体素子 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008076847A Expired - Lifetime JP5025540B2 (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子 |
JP2008076845A Pending JP2008211228A (ja) | 2002-03-26 | 2008-03-24 | 窒化物系半導体素子の製造方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011226265A Pending JP2012028812A (ja) | 2002-03-26 | 2011-10-13 | 窒化物系半導体素子 |
JP2013162967A Pending JP2013243400A (ja) | 2002-03-26 | 2013-08-06 | 窒化物系半導体素子 |
Country Status (3)
Country | Link |
---|---|
US (9) | US6791120B2 (ja) |
JP (5) | JP5025540B2 (ja) |
CN (3) | CN1271766C (ja) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8352400B2 (en) | 1991-12-23 | 2013-01-08 | Hoffberg Steven M | Adaptive pattern recognition based controller apparatus and method and human-factored interface therefore |
US7966078B2 (en) | 1999-02-01 | 2011-06-21 | Steven Hoffberg | Network media appliance system and method |
US6791120B2 (en) * | 2002-03-26 | 2004-09-14 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
US7795707B2 (en) | 2002-04-30 | 2010-09-14 | Cree, Inc. | High voltage switching devices and process for forming same |
US6864502B2 (en) * | 2002-09-18 | 2005-03-08 | Toyoda Gosei Co., Ltd. | III group nitride system compound semiconductor light emitting element |
JP3841092B2 (ja) * | 2003-08-26 | 2006-11-01 | 住友電気工業株式会社 | 発光装置 |
EP1679740A4 (en) * | 2003-10-27 | 2009-09-02 | Sumitomo Electric Industries | GALLIUM NITRIDE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR PRODUCING THE SAME |
JP2005191530A (ja) * | 2003-12-03 | 2005-07-14 | Sumitomo Electric Ind Ltd | 発光装置 |
CN100521120C (zh) | 2003-12-09 | 2009-07-29 | 加利福尼亚大学董事会 | 经表面粗化的高效(B,Al,Ga,In)N基发光二极管 |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
JP4379208B2 (ja) * | 2004-06-03 | 2009-12-09 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
JP2006128558A (ja) * | 2004-11-01 | 2006-05-18 | Sony Corp | 半導体レーザ、半導体レーザの実装方法、半導体レーザ実装構造体および光ディスク装置 |
JP5065574B2 (ja) * | 2005-01-12 | 2012-11-07 | 住友電気工業株式会社 | GaN基板の研磨方法 |
EP1681712A1 (en) | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
JP4916434B2 (ja) | 2005-03-16 | 2012-04-11 | パナソニック株式会社 | 窒化物半導体装置及びその製造方法 |
US7606276B2 (en) * | 2005-05-19 | 2009-10-20 | Panasonic Corporation | Nitride semiconductor device and method for fabricating the same |
JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
JP2008042157A (ja) * | 2006-07-12 | 2008-02-21 | Sumitomo Electric Ind Ltd | 3族窒化物基板の製造方法、および3族窒化物基板 |
US7585772B2 (en) * | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
KR100755656B1 (ko) * | 2006-08-11 | 2007-09-04 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
JP2010510655A (ja) * | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | N面GaN、InNおよびAlNならびにそれらの合金を用いた発光ダイオードおよびレーザダイオード |
US8193020B2 (en) * | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
EP2087507A4 (en) * | 2006-11-15 | 2010-07-07 | Univ California | METHOD FOR THE HETEROEPITAXIAL GROWTH OF QUALITATIVELY HIGH-QUALITY N-SIDE-GAN, INN AND AIN AND THEIR ALLOYS THROUGH METALLORGANIC CHEMICAL IMMUNE |
US20080111144A1 (en) * | 2006-11-15 | 2008-05-15 | The Regents Of The University Of California | LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS |
US8026115B2 (en) * | 2006-11-17 | 2011-09-27 | 3M Innovative Properties Company | Optical bonding composition for LED light source |
WO2008064068A2 (en) * | 2006-11-17 | 2008-05-29 | 3M Innovative Properties Company | Planarized led with optical extractor |
KR101450929B1 (ko) * | 2006-11-20 | 2014-10-14 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Led 광원용 광학 접합 조성물 |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動***置測位装置 |
JP2009190936A (ja) * | 2008-02-14 | 2009-08-27 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法 |
US8343824B2 (en) * | 2008-04-29 | 2013-01-01 | International Rectifier Corporation | Gallium nitride material processing and related device structures |
JP4730422B2 (ja) * | 2008-10-24 | 2011-07-20 | 住友電気工業株式会社 | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法、及びiii族窒化物半導体エピタキシャルウエハ |
JP2011103400A (ja) * | 2009-11-11 | 2011-05-26 | Sumitomo Electric Ind Ltd | 化合物半導体素子 |
JP2011187579A (ja) * | 2010-03-05 | 2011-09-22 | Sony Corp | モードロック半導体レーザ素子及びその駆動方法 |
RU2434315C1 (ru) | 2010-03-15 | 2011-11-20 | Юрий Георгиевич Шретер | Светоизлучающее устройство с гетерофазными границами |
CN102136435B (zh) * | 2010-04-08 | 2013-05-15 | 上海卓骋电子科技有限公司 | 高性能半导体结构的制造方法 |
JP2012231087A (ja) * | 2011-04-27 | 2012-11-22 | Mitsubishi Chemicals Corp | 窒化物系ledの製造方法 |
JP5598437B2 (ja) * | 2011-07-12 | 2014-10-01 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
WO2013039003A1 (ja) | 2011-09-12 | 2013-03-21 | 三菱化学株式会社 | 発光ダイオード素子 |
CN103579428B (zh) * | 2012-07-30 | 2016-08-17 | 比亚迪股份有限公司 | 一种led外延片及其制备方法 |
JP2013128150A (ja) * | 2013-03-26 | 2013-06-27 | Toyoda Gosei Co Ltd | Iii族窒化物半導体からなる発光素子の製造方法 |
JP6151135B2 (ja) | 2013-09-03 | 2017-06-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6255874B2 (ja) * | 2013-10-09 | 2018-01-10 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
CN105706282B (zh) | 2013-11-06 | 2018-05-01 | 瓦特燃料电池公司 | 气态燃料cpox重整器和cpox重整方法 |
CN105814244B (zh) * | 2013-12-20 | 2018-06-29 | 日本碍子株式会社 | 包含氮化镓层的基板及其制造方法 |
CN104752306B (zh) * | 2013-12-31 | 2018-03-09 | 北京北方华创微电子装备有限公司 | 在氮化镓层上刻蚀隔离槽的处理方法 |
WO2015146069A1 (ja) * | 2014-03-28 | 2015-10-01 | パナソニックIpマネジメント株式会社 | 発光ダイオード素子 |
CN105355550B (zh) * | 2015-12-02 | 2018-05-01 | 中国科学院微电子研究所 | Iii族氮化物低损伤刻蚀方法 |
CN107460546B (zh) * | 2017-07-18 | 2019-06-25 | 成都新柯力化工科技有限公司 | 一种规模化制备led用半导体材料氮化镓薄膜的方法 |
CN109755356B (zh) * | 2017-11-07 | 2020-08-21 | 山东浪潮华光光电子股份有限公司 | 一种提升GaN基发光二极管内置欧姆接触性能的方法 |
JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して1つ以上の素子のバーを除去するための方法 |
JP2021012900A (ja) * | 2019-07-03 | 2021-02-04 | パナソニックIpマネジメント株式会社 | Iii族窒化物系半導体レーザ素子 |
US11538849B2 (en) * | 2020-05-28 | 2022-12-27 | X Display Company Technology Limited | Multi-LED structures with reduced circuitry |
CN112548845B (zh) * | 2021-02-19 | 2021-09-14 | 清华大学 | 一种基板加工方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330622A (ja) * | 1998-05-21 | 1999-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2000068553A (ja) * | 1998-08-21 | 2000-03-03 | Anritsu Corp | スーパールミネッセントダイオード |
JP2000332343A (ja) * | 1999-05-21 | 2000-11-30 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP2001322899A (ja) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体基板及びその製造方法 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4555877A (en) * | 1982-10-13 | 1985-12-03 | Fausto Libra | Prefabricated multi-story building |
JPH09103172A (ja) | 1985-07-12 | 1997-04-22 | Iseki & Co Ltd | 脱穀装置 |
JPH05299693A (ja) * | 1992-04-21 | 1993-11-12 | Victor Co Of Japan Ltd | 端面発光型半導体装置 |
JPH06275911A (ja) | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | 半導体レーザ装置とその製造方法 |
US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
JP3165374B2 (ja) | 1995-08-31 | 2001-05-14 | 株式会社東芝 | 化合物半導体の電極の形成方法 |
JP3754120B2 (ja) * | 1996-02-27 | 2006-03-08 | 株式会社東芝 | 半導体発光装置 |
JPH09266352A (ja) * | 1996-03-28 | 1997-10-07 | Fuji Photo Film Co Ltd | 半導体発光素子 |
JP3495866B2 (ja) | 1996-12-24 | 2004-02-09 | キヤノン株式会社 | 光電変換装置 |
JPH10190059A (ja) | 1996-12-26 | 1998-07-21 | Nec Corp | 窒化化合物半導体素子及びその製造方法 |
JPH10294531A (ja) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | 窒化物化合物半導体発光素子 |
EP2234142A1 (en) * | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
JP3395631B2 (ja) | 1997-04-17 | 2003-04-14 | 日亜化学工業株式会社 | 窒化物半導体素子及び窒化物半導体素子の製造方法 |
KR19990014304A (ko) * | 1997-07-30 | 1999-02-25 | 아사구사 나오유끼 | 반도체 레이저, 반도체 발광 소자 및 그 제조 방법 |
US6493577B1 (en) * | 1997-09-23 | 2002-12-10 | Auckland Uniservices Ltd. | Method and system for detecting white matter neural injury and predicting neurological outcome particularly for preterm infants |
JP3932466B2 (ja) * | 1997-09-25 | 2007-06-20 | 富士フイルム株式会社 | 半導体レーザ |
JP3925753B2 (ja) * | 1997-10-24 | 2007-06-06 | ソニー株式会社 | 半導体素子およびその製造方法ならびに半導体発光素子 |
JP3456413B2 (ja) | 1997-11-26 | 2003-10-14 | 日亜化学工業株式会社 | 窒化物半導体の成長方法及び窒化物半導体素子 |
JP3360812B2 (ja) | 1998-05-26 | 2003-01-07 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP3788104B2 (ja) | 1998-05-28 | 2006-06-21 | 住友電気工業株式会社 | 窒化ガリウム単結晶基板及びその製造方法 |
TW428331B (en) * | 1998-05-28 | 2001-04-01 | Sumitomo Electric Industries | Gallium nitride single crystal substrate and method of producing the same |
JP4005701B2 (ja) * | 1998-06-24 | 2007-11-14 | シャープ株式会社 | 窒素化合物半導体膜の形成方法および窒素化合物半導体素子 |
JP3397141B2 (ja) * | 1998-07-28 | 2003-04-14 | 住友電気工業株式会社 | 白色led |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
KR100277968B1 (ko) * | 1998-09-23 | 2001-03-02 | 구자홍 | 질화갈륨 기판 제조방법 |
JP2001015852A (ja) * | 1999-04-26 | 2001-01-19 | Sharp Corp | p型のIII族窒化物半導体層上の電極構造とその形成方法 |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
JP4077137B2 (ja) | 2000-06-15 | 2008-04-16 | 東芝電子エンジニアリング株式会社 | 半導体発光素子及びその製造方法 |
JP2001068786A (ja) | 1999-06-24 | 2001-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子およびその製造方法 |
JP4282173B2 (ja) * | 1999-09-03 | 2009-06-17 | シャープ株式会社 | 窒素化合物半導体発光素子およびその製造方法 |
US6455877B1 (en) * | 1999-09-08 | 2002-09-24 | Sharp Kabushiki Kaisha | III-N compound semiconductor device |
JP4424840B2 (ja) * | 1999-09-08 | 2010-03-03 | シャープ株式会社 | Iii−n系化合物半導体装置 |
JP3733008B2 (ja) | 1999-09-08 | 2006-01-11 | シャープ株式会社 | Iii−n系化合物半導体装置 |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
JP2001102678A (ja) * | 1999-09-29 | 2001-04-13 | Toshiba Corp | 窒化ガリウム系化合物半導体素子 |
JP2001176823A (ja) | 1999-12-17 | 2001-06-29 | Sharp Corp | 窒化物半導体チップの製造方法 |
JP4618836B2 (ja) | 2000-01-04 | 2011-01-26 | シャープ株式会社 | 窒化物系化合物半導体基板およびその製造方法 |
JP2001345266A (ja) | 2000-02-24 | 2001-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置,その製造方法及び半導体基板の製造方法 |
US6566231B2 (en) * | 2000-02-24 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region |
JP3636976B2 (ja) * | 2000-03-17 | 2005-04-06 | 日本電気株式会社 | 窒化物半導体素子およびその製造方法 |
US6738403B2 (en) * | 2000-04-06 | 2004-05-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element and semiconductor laser |
JP2001308460A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 窒化物半導体レーザ素子とその光ピックアップ装置 |
JP2001339101A (ja) * | 2000-05-26 | 2001-12-07 | Sharp Corp | 窒化ガリウム系化合物半導体素子 |
JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
JP2002026456A (ja) | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体装置、半導体レーザ及びその製造方法並びにエッチング方法 |
JP2002026438A (ja) | 2000-07-05 | 2002-01-25 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP2002033305A (ja) | 2000-07-13 | 2002-01-31 | Hitachi Ltd | 半導体装置の製造方法およびそれを用いて製造した半導体装置 |
TW451504B (en) * | 2000-07-28 | 2001-08-21 | Opto Tech Corp | Compound semiconductor device and method for making the same |
JP4416297B2 (ja) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置 |
JP2002158393A (ja) | 2000-09-11 | 2002-05-31 | Fuji Photo Film Co Ltd | 半導体レーザ素子および半導体レーザ装置 |
JP2002094189A (ja) * | 2000-09-14 | 2002-03-29 | Sharp Corp | 窒化物半導体レーザ素子およびそれを用いた光学装置 |
JP2002141552A (ja) * | 2000-10-31 | 2002-05-17 | Ricoh Co Ltd | 3族窒化物半導体、半導体基板、該半導体を用いたレーザおよび半導体装置 |
JP2001313441A (ja) | 2001-03-30 | 2001-11-09 | Rohm Co Ltd | 半導体発光素子 |
JP3812356B2 (ja) | 2001-03-30 | 2006-08-23 | 松下電器産業株式会社 | 半導体発光素子およびその製造方法 |
JP2002324913A (ja) * | 2001-04-25 | 2002-11-08 | Ricoh Co Ltd | Iii族窒化物半導体およびその作製方法および半導体装置およびその作製方法 |
KR100387242B1 (ko) | 2001-05-26 | 2003-06-12 | 삼성전기주식회사 | 반도체 발광소자의 제조방법 |
US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
US6791120B2 (en) * | 2002-03-26 | 2004-09-14 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
JP3933592B2 (ja) | 2002-03-26 | 2007-06-20 | 三洋電機株式会社 | 窒化物系半導体素子 |
-
2003
- 2003-03-24 US US10/394,260 patent/US6791120B2/en not_active Expired - Lifetime
- 2003-03-26 CN CNB031088279A patent/CN1271766C/zh not_active Expired - Lifetime
- 2003-03-26 CN CN2006100959057A patent/CN1913104B/zh not_active Expired - Lifetime
- 2003-03-26 CN CNB2005101286986A patent/CN100448039C/zh not_active Expired - Lifetime
-
2004
- 2004-09-09 US US10/936,499 patent/US6890779B2/en not_active Expired - Lifetime
-
2005
- 2005-04-26 US US11/114,193 patent/US7655484B2/en not_active Expired - Lifetime
-
2006
- 2006-12-04 US US11/607,896 patent/US20070077669A1/en not_active Abandoned
-
2007
- 2007-06-04 US US11/806,709 patent/US20070235750A1/en not_active Abandoned
- 2007-10-30 US US11/928,185 patent/US20080067541A1/en not_active Abandoned
- 2007-10-30 US US11/928,077 patent/US20080179601A1/en not_active Abandoned
- 2007-10-30 US US11/927,905 patent/US20080069162A1/en not_active Abandoned
-
2008
- 2008-03-24 JP JP2008076847A patent/JP5025540B2/ja not_active Expired - Lifetime
- 2008-03-24 JP JP2008076845A patent/JP2008211228A/ja active Pending
- 2008-03-24 JP JP2008076844A patent/JP4180107B2/ja not_active Expired - Lifetime
- 2008-06-16 US US12/139,807 patent/US7629623B2/en not_active Expired - Lifetime
-
2011
- 2011-10-13 JP JP2011226265A patent/JP2012028812A/ja active Pending
-
2013
- 2013-08-06 JP JP2013162967A patent/JP2013243400A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330622A (ja) * | 1998-05-21 | 1999-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2000068553A (ja) * | 1998-08-21 | 2000-03-03 | Anritsu Corp | スーパールミネッセントダイオード |
JP2000332343A (ja) * | 1999-05-21 | 2000-11-30 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP2001322899A (ja) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体基板及びその製造方法 |
Non-Patent Citations (5)
Title |
---|
JPN3014000577; 河東田隆 編著: '半導体評価技術' 集積回路プロセス技術シリーズ (抜粋) 初版第4刷, 19940530, 産業図書(株) |
JPN3014000578; 先端電子材料事典編集委員会 編: 先端電子材料事典 第1刷, 19910315, PAGES 194-195, 654-655, (株)シーエムシー |
JPN3014000579; 電気学会通信教育会: '電子材料工学' 電気学会大学講座 初版第2刷, 19831125, PAGES 288-291, (社)電気学会 |
JPN3014000580; (社)電子情報通信学会 編: 情報通信の新時代を拓く- 高周波・光半導体デバイス 初版第2刷, 20010315, PAGES 22-25, (社)電子情報通信学会 |
JPN3014000581; MORKOC H: 'NITRIDE SEMICONDUCTORS AND DEVICES' SPRINGER SERIES IN MATERIAL SCIENCE 及び抄訳 , 1999, PAGES V, 196-197, SPRINGER |
Also Published As
Publication number | Publication date |
---|---|
US20070077669A1 (en) | 2007-04-05 |
CN1797803A (zh) | 2006-07-05 |
US20050029539A1 (en) | 2005-02-10 |
CN1447485A (zh) | 2003-10-08 |
JP5025540B2 (ja) | 2012-09-12 |
JP2013243400A (ja) | 2013-12-05 |
JP2008160167A (ja) | 2008-07-10 |
US20080069162A1 (en) | 2008-03-20 |
CN1271766C (zh) | 2006-08-23 |
JP4180107B2 (ja) | 2008-11-12 |
US7629623B2 (en) | 2009-12-08 |
CN1913104A (zh) | 2007-02-14 |
US6890779B2 (en) | 2005-05-10 |
US6791120B2 (en) | 2004-09-14 |
JP2012028812A (ja) | 2012-02-09 |
JP2008211228A (ja) | 2008-09-11 |
US20050191775A1 (en) | 2005-09-01 |
US20080179601A1 (en) | 2008-07-31 |
US20040012032A1 (en) | 2004-01-22 |
US7655484B2 (en) | 2010-02-02 |
US20080067541A1 (en) | 2008-03-20 |
CN1913104B (zh) | 2010-05-12 |
CN100448039C (zh) | 2008-12-31 |
US20080315221A1 (en) | 2008-12-25 |
US20070235750A1 (en) | 2007-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4180107B2 (ja) | 窒化物系半導体素子の製造方法 | |
JP3933592B2 (ja) | 窒化物系半導体素子 | |
US9786810B2 (en) | Method of fabricating optical devices using laser treatment | |
US8283677B2 (en) | Nitride semiconductor light-emitting device | |
JP3662806B2 (ja) | 窒化物系半導体層の製造方法 | |
JPWO2006041134A1 (ja) | 窒化化合物半導体素子およびその製造方法 | |
KR20110110846A (ko) | 레이저 패시트들을 위한 광전기화학 식각 | |
JP2002185085A (ja) | 窒化物系半導体レーザ素子及びチップ分割方法 | |
JP3920910B2 (ja) | 窒化物系半導体素子およびその製造方法 | |
JP2007273844A (ja) | 半導体素子 | |
WO2009087855A1 (ja) | 半導体デバイスの製造方法 | |
JP4148976B2 (ja) | 窒化物系半導体素子の製造方法 | |
JP2007116192A (ja) | 窒化物系半導体装置 | |
JP4017654B2 (ja) | 窒化物系半導体素子 | |
JP3896149B2 (ja) | 窒化物系半導体素子およびその製造方法 | |
JP4078380B2 (ja) | 窒化物系半導体素子の製造方法 | |
JP4171511B2 (ja) | 窒化物系半導体素子の製造方法 | |
JP2002026438A (ja) | 窒化物系半導体素子およびその製造方法 | |
JP2010027670A (ja) | 半導体構造の加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080418 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080418 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20080418 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080527 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080620 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20080716 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080729 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080826 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110905 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120905 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120905 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130905 Year of fee payment: 5 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
RVTR | Cancellation due to determination of trial for invalidation |