JP2007509027A - 化学気相堆積を用いるカーボンナノチューブ直径の制御 - Google Patents
化学気相堆積を用いるカーボンナノチューブ直径の制御 Download PDFInfo
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- H—ELECTRICITY
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- H01J9/02—Manufacture of electrodes or electrode systems
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- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
Abstract
Description
式中、
p=圧力(気圧)
tr=反応器の容積(ccm3)
Q=総マスフロー(sccm)
である。
Claims (20)
- 化学気相堆積により成長させたカーボンナノチューブの直径を0.2〜100ナノメートルの範囲で制御するための方法であって、触媒基板を成長反応器に導入するステップと、反応器室温度を所望の成長温度まで増大させるステップと、カーボン含有前駆体を含む反応ガスを反応器内に流すステップと、カーボンナノチューブの直径を制御するために反応器中でのカーボン含有前駆体の滞留時間を制御するステップとを含む方法。
- 反応器中でのカーボン含有前駆体の滞留時間は、制御圧力を反応室中で設定し、カーボン前駆体のガス流量を調節することにより制御される請求項1に記載の方法。
- 反応器中でのカーボン含有前駆体の滞留時間は、反応器中へ流れる制御ガス流量を設定し、反応器中の圧力を調節することにより制御される請求項1に記載の方法。
- 反応器中でのカーボン含有前駆体の滞留時間は、ガス流量および反応器の成長圧力を調節することにより制御される請求項1に記載の方法。
- 成長温度は、400〜1200℃である請求項1、2、3または4のいずれか1項に記載の方法。
- 触媒は、遷移金属粒子を含有する請求項1、2、3または4のいずれか1項に記載の方法。
- 触媒は、Fe、Mo、Co、Ni、Ti、Cr、Ru、Mn、Re、Rh、Pd、Vまたはそれらの合金から成る群から選ばれる少なくとも1種を含む請求項6に記載の方法。
- 触媒粒子は、0.2ナノメートル〜100ナノメートルのサイズを有する請求項1、2、3および4のいずれか1項に記載の方法。
- カーボン含有前駆体は、脂肪族炭化水素、芳香族炭化水素、カルボニル、ハロゲン化炭化水素、シリル化炭化水素、アルコール、エーテル、アルデヒド、ケトン、酸、フェノール、エステル、アミン、アルキルニトリル、チオエーテル、シアネート、ニトロアルキル、アルキルナイトレート、およびそれらの混合物から成る群から選ばれる少なくとも1種を含む請求項1、2、3、および4のいずれか1項に記載の方法。
- カーボン含有前駆体は、メタン、エタン、プロパン、ブタン、エチレン、アセチレン、一酸化炭素およびベンゼンから成る群から選ばれる少なくとも1種を含む請求項1、2、3または4のいずれか1項に記載の方法。
- キャリアガスをカーボン前駆体と共に用いるステップを含む請求項1、2、3または4のいずれか1項に記載の方法。
- キャリアガスは、アルゴン、窒素、ヘリウム、水素およびアンモニウムから成る群から選ばれる少なくとも1種を含む請求項11に記載の方法。
- 流量または圧力あるいはその両方は、カーボンナノチューブの直径を調整するために、反応器中での滞留時間を1分から20分の範囲で可変するように調節される請求項1、2、および3または4のいずれか1項に記載の方法。
- 流量または圧力あるいはその両方は、カーボンナノチューブの直径を調整するために、滞留時間を1.2分〜10分の範囲で可変するように調節される請求項1、2、および3または4のいずれか1項に記載の方法。
- カーボンナノチューブの直径は、触媒の粒径よりも小さい請求項1、2、および3または4のいずれか1項に記載の方法。
- 請求項1、2、および3または4のいずれか1項に記載の方法により得られるカーボンナノチューブまたはカーボンナノチューブのアレイ。
- 触媒の皮膜を堆積させるステップと、触媒の皮膜をリソグラフィによってパターニングするステップと、リソグラフィックパターニングにより画定された不要な触媒を除去するステップと、ナノチューブを成長させるために用いられる反応器中のガスの滞留時間を制御することにより0.2ナノメートル〜100ナノメートルの範囲で良好に調整された直径を有するナノチューブを成長させるステップとを含むプロセスにより形成されるリソグラフィによって画定される起点を有する単独のカーボンナノチューブまたはカーボンナノチューブのアレイを含む構造体。
- 触媒は、Fe、Mo、Co、Ni、Ti、Cr、Ru、W、Mn、Re、Rh、Pd、Vまたはそれらの合金から成る群から選ばれる少なくとも1種を含む請求項17に記載の構造体。
- 触媒の皮膜を堆積させるステップと、ソース領域またはドレイン領域あるいはその両方にのみ触媒を設けるために触媒の皮膜をリソグラフィによってパターニングするステップと、リソグラフィックパターニングにより画定されたチャネル領域から不要な触媒を除去するステップと、ナノチューブを成長させるために用いられる反応器中のガスの滞留時間を制御することにより0.2ナノメートル〜100ナノメートルの範囲で調整された直径を有するナノチューブを成長させるステップとを含むプロセスにより得られ、ソース領域およびドレイン領域ならびにソース領域とドレイン領域との間に位置し、ソース領域からドレイン領域まで延びるチャネル領域を含むFET。
- 請求項19に記載のFETを1つ以上含む集積回路。
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US10/689,675 US7628974B2 (en) | 2003-10-22 | 2003-10-22 | Control of carbon nanotube diameter using CVD or PECVD growth |
PCT/EP2004/052547 WO2005040453A2 (en) | 2003-10-22 | 2004-10-14 | Control of carbon nanotube diameter using cvd or pecvd growth |
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JP2007509027A true JP2007509027A (ja) | 2007-04-12 |
JP4658947B2 JP4658947B2 (ja) | 2011-03-23 |
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US (2) | US7628974B2 (ja) |
EP (1) | EP1713951A2 (ja) |
JP (1) | JP4658947B2 (ja) |
KR (1) | KR20060094958A (ja) |
TW (1) | TWI318248B (ja) |
WO (1) | WO2005040453A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007513760A (ja) * | 2003-12-15 | 2007-05-31 | ダニエル イー. リサスコ, | 単層カーボンナノチューブの生成のためのレニウム触媒および方法 |
JP2009214021A (ja) * | 2008-03-11 | 2009-09-24 | Japan Fine Ceramics Center | カーボンナノコイル製造用触媒及びその製造方法並びにカーボンナノコイルの製造方法 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9056783B2 (en) | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
US8958917B2 (en) | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
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US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
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US20050147746A1 (en) * | 2003-12-30 | 2005-07-07 | Dubin Valery M. | Nanotube growth and device formation |
US7105428B2 (en) * | 2004-04-30 | 2006-09-12 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
JP5374801B2 (ja) * | 2004-08-31 | 2013-12-25 | 富士通株式会社 | 炭素元素からなる線状構造物質の形成体及び形成方法 |
CN100337909C (zh) | 2005-03-16 | 2007-09-19 | 清华大学 | 一种碳纳米管阵列的生长方法 |
CN100376477C (zh) * | 2005-03-18 | 2008-03-26 | 清华大学 | 一种碳纳米管阵列生长装置及多壁碳纳米管阵列的生长方法 |
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CN100337910C (zh) * | 2005-03-31 | 2007-09-19 | 清华大学 | 一种碳纳米管阵列的生长方法 |
KR100707199B1 (ko) * | 2005-07-12 | 2007-04-13 | 삼성전자주식회사 | H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 |
US7491962B2 (en) | 2005-08-30 | 2009-02-17 | Micron Technology, Inc. | Resistance variable memory device with nanoparticle electrode and method of fabrication |
CN1955112A (zh) * | 2005-10-27 | 2007-05-02 | 鸿富锦精密工业(深圳)有限公司 | 碳纳米管制备方法 |
CN1988100B (zh) * | 2005-12-20 | 2010-09-29 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射阴极的制备方法 |
KR20080069705A (ko) * | 2005-12-22 | 2008-07-28 | 쇼와 덴코 가부시키가이샤 | 기상성장 탄소섬유 및 그 제조방법 |
CN1988101A (zh) * | 2005-12-23 | 2007-06-27 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射阴极的制备方法 |
AU2006343556B2 (en) * | 2005-12-29 | 2012-06-21 | Oned Material, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
CN101001515B (zh) * | 2006-01-10 | 2011-05-04 | 鸿富锦精密工业(深圳)有限公司 | 板式散热管及其制造方法 |
JP2009530214A (ja) * | 2006-01-30 | 2009-08-27 | 本田技研工業株式会社 | カーボン単層ナノチューブの成長のための触媒 |
US7635503B2 (en) * | 2006-02-21 | 2009-12-22 | Intel Corporation | Composite metal films and carbon nanotube fabrication |
US20070237706A1 (en) | 2006-04-10 | 2007-10-11 | International Business Machines Corporation | Embedded nanoparticle films and method for their formation in selective areas on a surface |
KR100806129B1 (ko) * | 2006-08-02 | 2008-02-22 | 삼성전자주식회사 | 탄소 나노 튜브의 형성 방법 |
EP2082419A4 (en) * | 2006-11-07 | 2014-06-11 | SYSTEMS AND METHODS FOR NANOWIL GROWTH | |
US20080135482A1 (en) * | 2006-11-27 | 2008-06-12 | Kripal Singh | Polyamide nanofiltration membrane useful for the removal of phospholipids |
JP4692520B2 (ja) * | 2007-06-13 | 2011-06-01 | 株式会社デンソー | カーボンナノチューブ製造方法 |
US20090117026A1 (en) * | 2007-10-01 | 2009-05-07 | Denso Corporation | Method for manufacturing carbon nano-tube |
US8010914B2 (en) * | 2007-11-14 | 2011-08-30 | Inotera Memories, Inc. | Circuit structure of integrated circuit |
US20090250731A1 (en) * | 2008-04-02 | 2009-10-08 | Tsung-Yeh Yang | Field-effect transistor structure and fabrication method thereof |
WO2009126846A1 (en) * | 2008-04-11 | 2009-10-15 | Sandisk 3D, Llc | Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom |
US20100012914A1 (en) * | 2008-07-18 | 2010-01-21 | Sandisk 3D Llc | Carbon-based resistivity-switching materials and methods of forming the same |
JP2012508159A (ja) * | 2008-11-18 | 2012-04-05 | ユニバーシティ サインス マレーシア | カーボンナノチューブ(carbonnanotubes,CNTs)を生成するプロセス |
FR2939422B1 (fr) * | 2008-12-08 | 2011-05-06 | Centre Nat Rech Scient | Procede de synthese de nanotubes de carbone sur materiaux micrometriques longs et particulaires |
KR101603774B1 (ko) * | 2009-05-14 | 2016-03-15 | 삼성전자주식회사 | 탄소나노튜브 소자 어레이의 제조방법 |
JP2012530663A (ja) * | 2009-06-17 | 2012-12-06 | マサチューセッツ インスティテュート オブ テクノロジー | アルキンによって補助されたカーボンナノ構造物の成長 |
US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
US9045343B2 (en) * | 2011-07-27 | 2015-06-02 | California Institute Of Technology | Carbon nanotube foams with controllable mechanical properties |
TWI479547B (zh) * | 2011-05-04 | 2015-04-01 | Univ Nat Cheng Kung | 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 |
CN102847953A (zh) * | 2011-06-30 | 2013-01-02 | 中国科学院过程工程研究所 | 一种球形纳米钨粉的制备方法 |
US9505615B2 (en) | 2011-07-27 | 2016-11-29 | California Institute Of Technology | Method for controlling microstructural arrangement of nominally-aligned arrays of carbon nanotubes |
US9776859B2 (en) | 2011-10-20 | 2017-10-03 | Brigham Young University | Microscale metallic CNT templated devices and related methods |
US9616635B2 (en) | 2012-04-20 | 2017-04-11 | California Institute Of Technology | Multilayer foam structures of nominally-aligned carbon nanotubes (CNTS) |
US20130285019A1 (en) * | 2012-04-26 | 2013-10-31 | Postech Academy-Industry Foundation | Field effect transistor and method of fabricating the same |
US10357765B2 (en) * | 2012-06-22 | 2019-07-23 | The University Of Tokyo | Carbon-containing metal catalyst particles for carbon nanotube synthesis and method of producing the same, catalyst carrier support, and method of producing carbon nanotubes |
WO2014039509A2 (en) | 2012-09-04 | 2014-03-13 | Ocv Intellectual Capital, Llc | Dispersion of carbon enhanced reinforcement fibers in aqueous or non-aqueous media |
KR101596088B1 (ko) * | 2013-06-05 | 2016-02-26 | 주식회사 엘지화학 | 탄소나노섬유 제조방법 및 이에 따라 제조된 탄소나노섬유 |
JP5890367B2 (ja) * | 2013-09-24 | 2016-03-22 | トヨタ自動車株式会社 | 燃料電池用セパレータ、燃料電池、及び、燃料電池用セパレータの製造方法 |
CN104099661B (zh) * | 2014-07-12 | 2016-08-17 | 吉林大学 | 一种低温、自组织生长非晶碳杂合单晶纳米石墨的制备方法 |
WO2017171736A1 (en) * | 2016-03-30 | 2017-10-05 | Intel Corporation | Nanowire for transistor integration |
KR102133623B1 (ko) | 2016-10-12 | 2020-07-13 | 주식회사 엘지화학 | 단일벽 탄소나노튜브 섬유 집합체 제조 방법 |
KR102650036B1 (ko) * | 2017-09-27 | 2024-03-20 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 천연 고무로부터 탄소 나노튜브를 제조하는 방법 |
CN110339842A (zh) * | 2019-06-26 | 2019-10-18 | 江西铜业技术研究院有限公司 | 一种生长碳纳米管的复合催化剂及其制备方法 |
KR102230246B1 (ko) * | 2020-11-09 | 2021-03-19 | (주)케이에이치 케미컬 | 탄소나노튜브의 연속 합성 방법 |
KR102230243B1 (ko) * | 2020-11-09 | 2021-03-19 | (주)케이에이치 케미컬 | 탄소나노튜브의 제조 방법 |
CN114267492B (zh) * | 2021-12-31 | 2023-07-25 | 大连工业大学 | 一种具有长管束碳纳米管且均匀透明的导电薄膜及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002118248A (ja) * | 2000-07-18 | 2002-04-19 | Lg Electronics Inc | カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ |
US20030004058A1 (en) * | 2001-05-21 | 2003-01-02 | Trustees Of Boston College | Varied morphology carbon nanotubes and method for their manufacture |
WO2003027011A2 (en) * | 2001-06-04 | 2003-04-03 | Ut-Battelle, Llc | Catalyst-induced growth of carbon nanotubes on tips of cantilevers and nanowires |
WO2003068676A1 (en) * | 2002-02-13 | 2003-08-21 | Toudai Tlo, Ltd. | Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube |
JP2006505483A (ja) * | 2002-11-26 | 2006-02-16 | カーボン ナノテクノロジーズ インコーポレーテッド | カーボンナノチューブ微粒子、組成物及びその使用法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6156256A (en) * | 1998-05-13 | 2000-12-05 | Applied Sciences, Inc. | Plasma catalysis of carbon nanofibers |
US6346189B1 (en) * | 1998-08-14 | 2002-02-12 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube structures made using catalyst islands |
EP1059266A3 (en) * | 1999-06-11 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition |
KR100582170B1 (ko) | 2003-04-14 | 2006-05-23 | 재단법인서울대학교산학협력재단 | 자기세정력을 가지는 탄소나노튜브 어레이 |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002118248A (ja) * | 2000-07-18 | 2002-04-19 | Lg Electronics Inc | カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ |
US20030004058A1 (en) * | 2001-05-21 | 2003-01-02 | Trustees Of Boston College | Varied morphology carbon nanotubes and method for their manufacture |
WO2003027011A2 (en) * | 2001-06-04 | 2003-04-03 | Ut-Battelle, Llc | Catalyst-induced growth of carbon nanotubes on tips of cantilevers and nanowires |
WO2003068676A1 (en) * | 2002-02-13 | 2003-08-21 | Toudai Tlo, Ltd. | Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube |
EP1481946A1 (en) * | 2002-02-13 | 2004-12-01 | TOUDAI TLO, Ltd. | Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube |
JP2006505483A (ja) * | 2002-11-26 | 2006-02-16 | カーボン ナノテクノロジーズ インコーポレーテッド | カーボンナノチューブ微粒子、組成物及びその使用法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007513760A (ja) * | 2003-12-15 | 2007-05-31 | ダニエル イー. リサスコ, | 単層カーボンナノチューブの生成のためのレニウム触媒および方法 |
JP2009214021A (ja) * | 2008-03-11 | 2009-09-24 | Japan Fine Ceramics Center | カーボンナノコイル製造用触媒及びその製造方法並びにカーボンナノコイルの製造方法 |
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US7628974B2 (en) | 2009-12-08 |
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JP4658947B2 (ja) | 2011-03-23 |
US20050089467A1 (en) | 2005-04-28 |
KR20060094958A (ko) | 2006-08-30 |
US20090278114A1 (en) | 2009-11-12 |
US8101150B2 (en) | 2012-01-24 |
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WO2005040453A2 (en) | 2005-05-06 |
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