JP2007300430A - 圧電薄膜共振器およびフィルタ - Google Patents
圧電薄膜共振器およびフィルタ Download PDFInfo
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- JP2007300430A JP2007300430A JP2006127017A JP2006127017A JP2007300430A JP 2007300430 A JP2007300430 A JP 2007300430A JP 2006127017 A JP2006127017 A JP 2006127017A JP 2006127017 A JP2006127017 A JP 2006127017A JP 2007300430 A JP2007300430 A JP 2007300430A
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明は、基板(10)と、基板上に設けられた下部電極(12)と、下部電極上に設けられた圧電膜(14)と、圧電膜を挟み下部電極と対向する部分(22)を有するように圧電膜上に設けられた上部電極(16)と、を具備し、対向する部分における圧電膜の外周の少なくとも一部は、上部電極と下部電極とが対向する領域(R)の外周より内側に設けられていることを特徴とする圧電薄膜共振子およびフィルタである。
【選択図】図2
Description
12 下部電極
14 圧電膜
15 圧電膜の外周
16 上部電極
17 上部電極の外周
18 空隙
22 共振部
24 圧電膜の端面
25 上部電極の下面
26 上部電極の端面
27 圧電膜の下面
R 上部電極と下部電極とが対向する領域
Claims (12)
- 基板と、該基板上に設けられた下部電極と、該下部電極上に設けられた圧電膜と、前記圧電膜を挟み前記下部電極と対向する部分を有するように前記圧電膜上に設けられた上部電極と、を具備し、
前記対向する部分における前記圧電膜の外周の少なくとも一部は、前記上部電極と前記下部電極とが対向する領域の外周より内側に設けられていることを特徴とする圧電薄膜共振子。 - 前記対向する領域を形成する前記上部電極の端面の少なくとも一部は、前記上部電極の下面から傾いていることを特徴とする請求項1記載の圧電薄膜共振子。
- 前記上部電極の前記端面と前記上部電極の前記下面との内角は15°以上であることを特徴とする請求項2記載の圧電薄膜共振子。
- 前記上部電極の前記端面と前記上部電極の前記下面との内角は28°以上90°未満であることを特徴とする請求項2記載の圧電薄膜共振子。
- 前記対向する領域における前記圧電膜の端面と前記圧電膜の下面との内角は55°以上であることを特徴とする請求項2から4のいずれか一項記載の圧電薄膜共振子。
- 基板と、該基板上に設けられた下部電極と、該下部電極上に設けられた圧電膜と、前記圧電膜を挟み前記下部電極と対向する部分を有するように前記圧電膜上に設けられた上部電極と、を具備し、
前記上部電極と前記下部電極とが対向する領域における前記圧電膜の端面と前記圧電膜の下面との内角は90°より大きいことを特徴とする圧電薄膜共振子。 - 前記圧電膜を挟み前記下部電極と前記上部電極とが対向する部分の外周の一部が楕円形の一部の辺であることを特徴とする請求項1から6のいずれか一項記載の圧電薄膜共振子。
- 前記圧電膜を挟み前記下部電極と前記上部電極とが対向する部分は非平行からなる多角形であることを特徴とする請求項1から6のいずれか一項記載の圧電薄膜共振子。
- 前記圧電膜は窒化アルミニウムを含むことを特徴とする請求項1から8のいずれか一項記載の圧電薄膜共振子。
- 前記下部電極および前記上部電極の少なくとも一方はルテニウム膜を含むことを特徴とする請求項1から9のいずれか一項記載の圧電薄膜共振子。
- 前記圧電膜を挟み前記下部電極と前記上部電極とが対向する部分の前記下部電極は、前記基板に設けられた空隙上に設けられている、または前記基板上に空隙を介し設けられていることを特徴とする請求項1から10のいずれか一項記載の圧電薄膜共振子。
- 請求項1から11のいずれか一項記載圧電薄膜共振子を有することを特徴とするフィルタ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006127017A JP4252584B2 (ja) | 2006-04-28 | 2006-04-28 | 圧電薄膜共振器およびフィルタ |
EP20070106869 EP1850478B1 (en) | 2006-04-28 | 2007-04-24 | Piezoelectric thin-film resonator and filter using the same |
KR20070040985A KR100857966B1 (ko) | 2006-04-28 | 2007-04-26 | 압전 박막 공진기 및 필터 |
US11/790,806 US7567023B2 (en) | 2006-04-28 | 2007-04-27 | Piezoelectric thin-film resonator and filter using the same |
CNB2007101077424A CN100557969C (zh) | 2006-04-28 | 2007-04-28 | 压电薄膜谐振器及采用该压电薄膜谐振器的滤波器 |
Applications Claiming Priority (1)
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JP2006127017A JP4252584B2 (ja) | 2006-04-28 | 2006-04-28 | 圧電薄膜共振器およびフィルタ |
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JP2007300430A true JP2007300430A (ja) | 2007-11-15 |
JP4252584B2 JP4252584B2 (ja) | 2009-04-08 |
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JP2006127017A Active JP4252584B2 (ja) | 2006-04-28 | 2006-04-28 | 圧電薄膜共振器およびフィルタ |
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US (1) | US7567023B2 (ja) |
EP (1) | EP1850478B1 (ja) |
JP (1) | JP4252584B2 (ja) |
KR (1) | KR100857966B1 (ja) |
CN (1) | CN100557969C (ja) |
Cited By (11)
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JP2007324823A (ja) * | 2006-05-31 | 2007-12-13 | Fujitsu Media Device Kk | フィルタ |
JP2010045437A (ja) * | 2008-08-08 | 2010-02-25 | Fujitsu Ltd | 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器 |
JP2010087578A (ja) * | 2008-09-29 | 2010-04-15 | Kyocera Corp | バルク音響波共振子および電子部品 |
JP2010226171A (ja) * | 2009-03-19 | 2010-10-07 | Taiyo Yuden Co Ltd | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
JP2011160232A (ja) * | 2010-02-01 | 2011-08-18 | Ube Industries Ltd | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
US8125123B2 (en) | 2007-07-13 | 2012-02-28 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonant element and circuit component using the same |
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2007
- 2007-04-24 EP EP20070106869 patent/EP1850478B1/en active Active
- 2007-04-26 KR KR20070040985A patent/KR100857966B1/ko active IP Right Grant
- 2007-04-27 US US11/790,806 patent/US7567023B2/en active Active
- 2007-04-28 CN CNB2007101077424A patent/CN100557969C/zh active Active
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JP2010045437A (ja) * | 2008-08-08 | 2010-02-25 | Fujitsu Ltd | 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器 |
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US8240015B2 (en) | 2009-03-19 | 2012-08-14 | Taiyo Yuden Co., Ltd. | Method of manufacturing thin film resonator |
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JP2013038658A (ja) * | 2011-08-09 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波デバイス |
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JP2013168748A (ja) * | 2012-02-14 | 2013-08-29 | Taiyo Yuden Co Ltd | 弾性波デバイス |
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JP2018207376A (ja) * | 2017-06-07 | 2018-12-27 | 太陽誘電株式会社 | 弾性波デバイス |
Also Published As
Publication number | Publication date |
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EP1850478A2 (en) | 2007-10-31 |
EP1850478B1 (en) | 2012-04-11 |
CN101064499A (zh) | 2007-10-31 |
CN100557969C (zh) | 2009-11-04 |
KR100857966B1 (ko) | 2008-09-10 |
KR20070106430A (ko) | 2007-11-01 |
JP4252584B2 (ja) | 2009-04-08 |
EP1850478A3 (en) | 2009-12-02 |
US7567023B2 (en) | 2009-07-28 |
US20070252476A1 (en) | 2007-11-01 |
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