JP4488167B2 - フィルタ - Google Patents
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- JP4488167B2 JP4488167B2 JP2003420586A JP2003420586A JP4488167B2 JP 4488167 B2 JP4488167 B2 JP 4488167B2 JP 2003420586 A JP2003420586 A JP 2003420586A JP 2003420586 A JP2003420586 A JP 2003420586A JP 4488167 B2 JP4488167 B2 JP 4488167B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- resonators
- filter
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 claims description 210
- 239000010408 film Substances 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 230000001902 propagating effect Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 description 19
- 230000004048 modification Effects 0.000 description 19
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
1995 IEEE ULTRASONICS SYMPOSIUM P905〜908/SOLIDLY MOUNTED RESONATORS AND FILTERS
さらに、本発明によれば、圧電薄膜共振器の間隔を狭くすることができ、面積効率の向上を図ることが可能になる。
11 素子基板
12 音響反射膜
12a AlN膜
12b SiO2膜
13,113 下部電極(第1の電極膜)
14 圧電薄膜
15 上部電極(第2の電極膜)
16,116 フィルタ
17,117 入力電極パッド
18,118 出力電極パッド
19,20,119,120 接地電極パッド
21,121 第1の配線部
22a,22b,122a,122b 第2の配線部
Claims (4)
- 圧電薄膜を第1の電極膜と第2の電極膜とで挟んだ構造を有して前記第1の電極膜、前記圧電薄膜および前記第2の電極膜が相互に重なり合う領域で構成され、前記圧電薄膜の内部を伝搬するバルク波により所定の共振周波数の信号を得る圧電薄膜共振器が複数設けられたフィルタであって、
複数の前記圧電薄膜共振器を構成する圧電薄膜はそれぞれ楕円形状を呈して相互に独立しており、
何れか1つの前記圧電薄膜共振器の長軸またはその延長線が、当該圧電薄膜共振器に隣接する他の前記圧電薄膜共振器の長軸またはその延長線と交差することを特徴とするフィルタ。 - 圧電薄膜を第1の電極膜と第2の電極膜とで挟んだ構造を有して前記第1の電極膜、前記圧電薄膜および前記第2の電極膜が相互に重なり合う領域で構成され、前記圧電薄膜の内部を伝搬するバルク波により所定の共振周波数の信号を得る圧電薄膜共振器が複数設けられたフィルタであって、
何れか1つの圧電薄膜共振器と当該圧電薄膜共振器に隣接する他の圧電薄膜共振器との対向する外周部の少なくとも一部が、間隔が一定となる曲線または折れ線で形成されていることを特徴とするフィルタ。 - 入力電極パッドと出力電極パッドとの間に形成された第1の配線部と、
前記第1の配線部と接地電極パッドとの間に形成された少なくとも1つの第2の配線部とをさらに備え、
何れか1つの前記圧電薄膜共振器が前記第1の配線部に配置され、
前記第1の配線部に配置された前記圧電薄膜共振器に隣接する他の圧電薄膜共振器が前記第2の配線部に配置されて、前記第1の配線部に配置された前記圧電薄膜共振器の共振周波数とほぼ一致する***振周波数を有していることを特徴とする請求項1または2記載のフィルタ。 - 前記接地電極パッドは、矩形形状を有する素子基板の相互に最も離間した2カ所の隅部近傍にそれぞれ配置されていることを特徴とする請求項3記載のフィルタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003420586A JP4488167B2 (ja) | 2003-12-18 | 2003-12-18 | フィルタ |
US11/009,021 US7116040B2 (en) | 2003-12-18 | 2004-12-13 | Electronic component and filter including the same |
CNB2004101013698A CN100488046C (zh) | 2003-12-18 | 2004-12-17 | 电子部件和包含该电子部件的滤波器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003420586A JP4488167B2 (ja) | 2003-12-18 | 2003-12-18 | フィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005184303A JP2005184303A (ja) | 2005-07-07 |
JP4488167B2 true JP4488167B2 (ja) | 2010-06-23 |
Family
ID=34708701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003420586A Expired - Fee Related JP4488167B2 (ja) | 2003-12-18 | 2003-12-18 | フィルタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7116040B2 (ja) |
JP (1) | JP4488167B2 (ja) |
CN (1) | CN100488046C (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006129195A (ja) * | 2004-10-29 | 2006-05-18 | Kyocera Kinseki Corp | 圧電薄膜素子 |
JP4687345B2 (ja) * | 2005-09-09 | 2011-05-25 | ソニー株式会社 | 薄膜バルク音響共振器 |
US7889027B2 (en) | 2005-09-09 | 2011-02-15 | Sony Corporation | Film bulk acoustic resonator shaped as an ellipse with a part cut off |
JP4252584B2 (ja) * | 2006-04-28 | 2009-04-08 | 富士通メディアデバイス株式会社 | 圧電薄膜共振器およびフィルタ |
US7629865B2 (en) * | 2006-05-31 | 2009-12-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters |
JP4968900B2 (ja) * | 2006-10-17 | 2012-07-04 | 太陽誘電株式会社 | ラダー型フィルタの製造方法 |
JP5013227B2 (ja) | 2007-04-11 | 2012-08-29 | 株式会社村田製作所 | 圧電薄膜フィルタ |
JPWO2009013938A1 (ja) * | 2007-07-20 | 2010-09-30 | 株式会社村田製作所 | 圧電共振子及び圧電フィルタ装置 |
JP5184179B2 (ja) * | 2008-03-28 | 2013-04-17 | 京セラ株式会社 | 薄膜共振子、フィルタおよびデュプレクサ |
JP4586897B2 (ja) * | 2008-06-24 | 2010-11-24 | 株式会社村田製作所 | 分波器 |
JP5200716B2 (ja) * | 2008-07-14 | 2013-06-05 | 株式会社村田製作所 | 分波器 |
JP5229945B2 (ja) * | 2008-09-09 | 2013-07-03 | 太陽誘電株式会社 | フィルタ、デュープレクサ、および通信装置 |
WO2019028288A1 (en) * | 2017-08-03 | 2019-02-07 | Akoustis, Inc. | ELLIPTICAL STRUCTURE FOR VOLUME ACOUSTIC WAVE RESONATOR |
JP7245849B2 (ja) * | 2018-01-19 | 2023-03-24 | 武漢衍熙微器件有限公司 | 薄膜圧電共振器 |
CN111010102B (zh) * | 2019-03-18 | 2023-12-15 | 天津大学 | 考虑形状的薄膜封装的mems器件组件及电子设备 |
US11552613B2 (en) | 2019-04-19 | 2023-01-10 | Akoustis, Inc. | Resonator shapes for bulk acoustic wave (BAW) devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2641571B1 (de) * | 1976-09-15 | 1977-06-08 | Siemens Ag | Als obertonquarz verwendeter dickenscherungsschwinger |
JPS55140314A (en) * | 1979-04-19 | 1980-11-01 | Noto Denshi Kogyo Kk | Piezoelectric vibrator |
US4584499A (en) * | 1985-04-12 | 1986-04-22 | General Electric Company | Autoresonant piezoelectric transformer signal coupler |
US6946772B2 (en) * | 2002-05-14 | 2005-09-20 | Tdk Corporation | Saw element, saw device and branching filter |
KR100506729B1 (ko) * | 2002-05-21 | 2005-08-08 | 삼성전기주식회사 | 박막 벌크 어코스틱 공진기(FBARs)소자 및 그제조방법 |
US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
-
2003
- 2003-12-18 JP JP2003420586A patent/JP4488167B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-13 US US11/009,021 patent/US7116040B2/en active Active
- 2004-12-17 CN CNB2004101013698A patent/CN100488046C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100488046C (zh) | 2009-05-13 |
US7116040B2 (en) | 2006-10-03 |
US20050146242A1 (en) | 2005-07-07 |
JP2005184303A (ja) | 2005-07-07 |
CN1630188A (zh) | 2005-06-22 |
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