JP2005056984A - 気相成長装置及び気相成長方法 - Google Patents
気相成長装置及び気相成長方法 Download PDFInfo
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- JP2005056984A JP2005056984A JP2003284912A JP2003284912A JP2005056984A JP 2005056984 A JP2005056984 A JP 2005056984A JP 2003284912 A JP2003284912 A JP 2003284912A JP 2003284912 A JP2003284912 A JP 2003284912A JP 2005056984 A JP2005056984 A JP 2005056984A
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- Prior art keywords
- single crystal
- susceptor
- vapor phase
- crystal substrate
- phase growth
- Prior art date
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- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000013078 crystal Substances 0.000 claims description 62
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】 気相成長装置100は、直径300mm以上のシリコン単結晶基板Wを両面から加熱しつつシリコン単結晶基板Wの主表面上にシリコンエピタキシャル層を気相成長させる装置である。この気相成長装置100は、シリコン単結晶基板Wを載置するためのサセプタ2を備えている。サセプタ2には、シリコン単結晶基板Wの裏面を支持する外周側部分20と、外周側部分20の内側にこの外周側部分20よりも窪んだ状態に保たれた内周側部分21とを備えた座ぐり2cが形成されている。そして、サセプタ2は、逆U字状に反った断面形状を有する。
【選択図】図2
Description
座ぐりは、シリコン単結晶基板の裏面を支持する外周側部分と、外周側部分の内側に該外周側部分よりも窪んだ状態に保たれた内周側部分とを有し、
サセプタは、逆U字状に反った縦断面形状を有することを特徴とする。
2b サセプタの裏面
2c 座ぐり
20 外周側部分
21 内周側部分
21a 座ぐりの底面(座ぐりの内周側部分の底面)
100 気相成長装置
W シリコン単結晶基板
Claims (4)
- サセプタに形成された座ぐり上に載置したシリコン単結晶基板を両面から加熱しつつ、該シリコン単結晶基板の主表面上にシリコンエピタキシャル層を気相成長させる気相成長装置において、
前記座ぐりは、前記シリコン単結晶基板の裏面を支持する外周側部分と、前記外周側部分の内側に該外周側部分よりも窪んだ状態に保たれた内周側部分とを有し、
前記サセプタは、逆U字状に反った縦断面形状を有することを特徴とする気相成長装置。 - 前記座ぐりは、
直径300mm以上のシリコン単結晶基板用に形成されてなり、
前記座ぐりの前記内周側部分の底面と前記シリコン単結晶基板の裏面との最大距離が0.4mm未満であることを特徴とする請求項1記載の気相成長装置。 - 前記サセプタは枚葉型であり、該サセプタの裏面側の曲率は、1.75×10-5mm-1以下であることを特徴とする請求項1または2記載の気相成長装置。
- 請求項1〜3の何れか一項に記載の気相成長装置を用いて、シリコン単結晶基板の主表面上にシリコンエピタキシャル層を気相成長させることを特徴とする気相成長方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003284912A JP4599816B2 (ja) | 2003-08-01 | 2003-08-01 | シリコンエピタキシャルウェーハの製造方法 |
DE602004028126T DE602004028126D1 (de) | 2003-08-01 | 2004-04-26 | Verfahren zur herstellung eines epitaktischen siliciumwafers |
KR1020067002089A KR101079175B1 (ko) | 2003-08-01 | 2004-04-26 | 실리콘 에피택셜 웨이퍼의 제조 방법 |
PCT/JP2004/006007 WO2005013343A1 (ja) | 2003-08-01 | 2004-04-26 | 気相成長装置及び気相成長方法 |
US10/565,653 US7591908B2 (en) | 2003-08-01 | 2004-04-26 | Vapor deposition apparatus and vapor deposition method |
EP04729522A EP1650788B1 (en) | 2003-08-01 | 2004-04-26 | Method for manufacturing a silicon epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003284912A JP4599816B2 (ja) | 2003-08-01 | 2003-08-01 | シリコンエピタキシャルウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005056984A true JP2005056984A (ja) | 2005-03-03 |
JP4599816B2 JP4599816B2 (ja) | 2010-12-15 |
Family
ID=34113856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003284912A Expired - Fee Related JP4599816B2 (ja) | 2003-08-01 | 2003-08-01 | シリコンエピタキシャルウェーハの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7591908B2 (ja) |
EP (1) | EP1650788B1 (ja) |
JP (1) | JP4599816B2 (ja) |
KR (1) | KR101079175B1 (ja) |
DE (1) | DE602004028126D1 (ja) |
WO (1) | WO2005013343A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010053648A2 (en) * | 2008-11-06 | 2010-05-14 | Asm America, Inc. | Substrate holder with varying density |
JP2016535432A (ja) * | 2013-09-27 | 2016-11-10 | エルピーイー ソシエタ ペル アチオニ | 支持エレメントを有するサセプタ |
JPWO2018207942A1 (ja) * | 2017-05-12 | 2020-03-12 | 東洋炭素株式会社 | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 |
JP7296914B2 (ja) | 2020-04-17 | 2023-06-23 | 三菱電機株式会社 | サテライトおよび炭化珪素半導体装置の製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016312A (ja) * | 2008-07-07 | 2010-01-21 | Sumco Corp | エピタキシャルウェーハの製造方法 |
EP2338164A4 (en) * | 2008-08-29 | 2012-05-16 | Veeco Instr Inc | VARIABLE THERMAL RESISTANCE PLATE HOLDER |
JP5521561B2 (ja) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
US9650726B2 (en) * | 2010-02-26 | 2017-05-16 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
CN101979721A (zh) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | 硅芯棒及用于多晶硅生长的硅芯结构 |
TWI541928B (zh) * | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | 晶圓載具 |
US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
CN102828238B (zh) * | 2012-08-24 | 2015-11-04 | 东莞市中镓半导体科技有限公司 | 用于改良外延过程中衬底晶片表面温场的方法 |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
US9799548B2 (en) * | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
DE102014100024A1 (de) | 2014-01-02 | 2015-07-02 | Aixtron Se | Vorrichtung zur Anordnung von Substraten, insbesondere Suszeptor eines CVD-Reaktors |
WO2015119744A1 (en) * | 2014-02-07 | 2015-08-13 | Applied Materials, Inc. | Chucking capability for bowed wafers on dsa |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0555151A (ja) * | 1991-08-23 | 1993-03-05 | Fujitsu Ltd | 半導体製造装置 |
JPH06302550A (ja) * | 1993-04-13 | 1994-10-28 | Hitachi Ltd | 半導体製造装置 |
JP2000269150A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Ceramics Co Ltd | 半導体ウエハ加熱処理用治具及びこれを用いた半導体ウエハ加熱処理用装置 |
JP2000315656A (ja) * | 1999-04-28 | 2000-11-14 | Toshiba Ceramics Co Ltd | エピタキシャルシリコン基板の製造方法 |
JP2000355766A (ja) * | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
JP2002134484A (ja) * | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
JP2003203866A (ja) * | 2001-10-24 | 2003-07-18 | Shin Etsu Handotai Co Ltd | 気相成長装置およびエピタキシャルウェーハの製造方法 |
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-
2003
- 2003-08-01 JP JP2003284912A patent/JP4599816B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-26 KR KR1020067002089A patent/KR101079175B1/ko active IP Right Grant
- 2004-04-26 DE DE602004028126T patent/DE602004028126D1/de not_active Expired - Lifetime
- 2004-04-26 WO PCT/JP2004/006007 patent/WO2005013343A1/ja active Application Filing
- 2004-04-26 EP EP04729522A patent/EP1650788B1/en not_active Expired - Fee Related
- 2004-04-26 US US10/565,653 patent/US7591908B2/en not_active Expired - Lifetime
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JPH0555151A (ja) * | 1991-08-23 | 1993-03-05 | Fujitsu Ltd | 半導体製造装置 |
JPH06302550A (ja) * | 1993-04-13 | 1994-10-28 | Hitachi Ltd | 半導体製造装置 |
JP2000269150A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Ceramics Co Ltd | 半導体ウエハ加熱処理用治具及びこれを用いた半導体ウエハ加熱処理用装置 |
JP2000315656A (ja) * | 1999-04-28 | 2000-11-14 | Toshiba Ceramics Co Ltd | エピタキシャルシリコン基板の製造方法 |
JP2000355766A (ja) * | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
JP2002134484A (ja) * | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
JP2003203866A (ja) * | 2001-10-24 | 2003-07-18 | Shin Etsu Handotai Co Ltd | 気相成長装置およびエピタキシャルウェーハの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010053648A2 (en) * | 2008-11-06 | 2010-05-14 | Asm America, Inc. | Substrate holder with varying density |
WO2010053648A3 (en) * | 2008-11-06 | 2010-07-15 | Asm America, Inc. | Substrate holder with varying density |
JP2016535432A (ja) * | 2013-09-27 | 2016-11-10 | エルピーイー ソシエタ ペル アチオニ | 支持エレメントを有するサセプタ |
JPWO2018207942A1 (ja) * | 2017-05-12 | 2020-03-12 | 東洋炭素株式会社 | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 |
JP7233361B2 (ja) | 2017-05-12 | 2023-03-06 | 東洋炭素株式会社 | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 |
JP7296914B2 (ja) | 2020-04-17 | 2023-06-23 | 三菱電機株式会社 | サテライトおよび炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060180076A1 (en) | 2006-08-17 |
JP4599816B2 (ja) | 2010-12-15 |
KR20060052948A (ko) | 2006-05-19 |
US7591908B2 (en) | 2009-09-22 |
KR101079175B1 (ko) | 2011-11-02 |
DE602004028126D1 (de) | 2010-08-26 |
WO2005013343A1 (ja) | 2005-02-10 |
EP1650788A1 (en) | 2006-04-26 |
EP1650788A4 (en) | 2006-10-11 |
EP1650788B1 (en) | 2010-07-14 |
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