JP7233361B2 - サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 - Google Patents
サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 Download PDFInfo
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Description
また、支持面及び規制面が例えば黒鉛である場合、エピタキシャル層の形成時に支持面及び規制面に生じたSiCがSiC基板に付着することがあるが、炭化タンタルにすることで、SiCの付着を防止できる。また、凹部の表面をSiCで構成した場合、エピタキシャル層の形成時にこのSiCが昇華するため、サセプタの寿命が短くなる可能性がある。これに対し、上記の構成は、凹部の表面に加えて、支持面及び規制面も炭化タンタルであるため、SiC基板をセットする部分の略全体において昇華を防止できる。これにより、サセプタの寿命を長くすることができる。
また、サセプタのコストを軽減しつつ、選択的に特定の部位で同様の効果(SiC基板の表面荒れの抑制)を発揮させることができる。
また、サセプタの全体を炭化タンタル層で被覆する場合は、炭化タンタル層の上にSiCが析出して、その析出したSiCがSiC基板に付着するおそれがある。この点、上記のようにサセプタ上面及びサセプタ側面をSiC層で被覆することで、炭化タンタルの上にSiCが析出されにくいので、SiC基板の汚れを防止できる。
14 基板載置部
20 上段部
21 規制面
22 支持面
30 凹部
31 凹部側面
32 凹部底面
50 SiC基板
Claims (4)
- SiC基板の主面にエピタキシャル層を形成する際に当該SiC基板を載せるサセプタにおいて、
基材の少なくとも一部に異なる組成の層を被覆することで構成されており、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層の形成処理時において前記SiC基板の裏面と接触しない深さの凹部と、
前記支持面の径方向の外側に形成されており、前記SiC基板の径方向の移動を規制する規制面と、
が形成されており、
前記凹部の径方向の中央における深さである中央凹部深さが100μm以上200μm以下であり、
前記支持面及び前記規制面の少なくとも表面が炭化タンタルであり、
前記凹部は、前記基材の凹形状部分に炭化タンタル層を形成した構成であり、
前記基材が黒鉛であり、少なくともサセプタ上面とサセプタ側面にSiC層が形成されていることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
前記凹部は全体にわたって深さが同じであることを特徴とするサセプタ。 - 請求項2に記載のサセプタであって、
前記凹部は、基板厚み方向に平行な面である凹部側面と、基板厚み方向に垂直な面である凹部底面と、で構成されていることを特徴とするサセプタ。 - SiC基板の主面にエピタキシャル層が形成されたエピタキシャル基板の製造方法において、
サセプタに前記SiC基板を載せて化学蒸着法によりエピタキシャル層を形成するエピタキシャル層形成工程を含み、
前記エピタキシャル層形成工程で用いる前記サセプタは、基材の少なくとも一部に異なる組成の層を被覆することで構成されており、
前記サセプタには、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層形成工程での処理時において前記SiC基板と接触しない深さの凹部と、
前記支持面の径方向の外側に形成されており、前記SiC基板の径方向の移動を規制する規制面と、
が形成されており、
前記凹部の径方向の中央における深さである中央凹部深さが100μm以上200μm以下であり、
前記支持面及び前記規制面の少なくとも表面が炭化タンタルであり、
前記凹部は、前記基材の凹形状部分に炭化タンタル層を形成した構成であり、
前記基材が黒鉛であり、少なくともサセプタ上面とサセプタ側面にSiC層が形成されていることを特徴とするエピタキシャル基板の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2017096003 | 2017-05-12 | ||
JP2017096003 | 2017-05-12 | ||
PCT/JP2018/018437 WO2018207942A1 (ja) | 2017-05-12 | 2018-05-11 | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 |
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JPWO2018207942A1 JPWO2018207942A1 (ja) | 2020-03-12 |
JP7233361B2 true JP7233361B2 (ja) | 2023-03-06 |
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JP2005056984A (ja) | 2003-08-01 | 2005-03-03 | Shin Etsu Handotai Co Ltd | 気相成長装置及び気相成長方法 |
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- 2018-05-11 TW TW107116144A patent/TW201907050A/zh unknown
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JP2011146506A (ja) | 2010-01-14 | 2011-07-28 | Sumco Corp | 気相成長装置用サセプタ及び気相成長装置 |
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US20210040643A1 (en) | 2021-02-11 |
TW201907050A (zh) | 2019-02-16 |
JPWO2018207942A1 (ja) | 2020-03-12 |
WO2018207942A1 (ja) | 2018-11-15 |
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