HK1182842A1 - 減小功耗的 柵極驅動器 - Google Patents
減小功耗的 柵極驅動器Info
- Publication number
- HK1182842A1 HK1182842A1 HK13109921.0A HK13109921A HK1182842A1 HK 1182842 A1 HK1182842 A1 HK 1182842A1 HK 13109921 A HK13109921 A HK 13109921A HK 1182842 A1 HK1182842 A1 HK 1182842A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- mosfet
- power loss
- gate drive
- reduced power
- mosfet gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
- H03K2217/9401—Calibration techniques
- H03K2217/94031—Calibration involving digital processing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93109707P | 2007-05-21 | 2007-05-21 | |
US11/890,942 US7812647B2 (en) | 2007-05-21 | 2007-08-08 | MOSFET gate drive with reduced power loss |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1182842A1 true HK1182842A1 (zh) | 2013-12-06 |
Family
ID=40071824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK13109921.0A HK1182842A1 (zh) | 2007-05-21 | 2013-08-26 | 減小功耗的 柵極驅動器 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7812647B2 (zh) |
EP (1) | EP2156558A4 (zh) |
JP (1) | JP5261777B2 (zh) |
KR (1) | KR101222793B1 (zh) |
CN (2) | CN103152022B (zh) |
HK (1) | HK1182842A1 (zh) |
TW (1) | TWI369846B (zh) |
WO (1) | WO2008153631A1 (zh) |
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-
2007
- 2007-08-08 US US11/890,942 patent/US7812647B2/en not_active Expired - Fee Related
-
2008
- 2008-04-30 WO PCT/US2008/005543 patent/WO2008153631A1/en active Application Filing
- 2008-04-30 CN CN201310021711.2A patent/CN103152022B/zh not_active Expired - Fee Related
- 2008-04-30 CN CN2008800256665A patent/CN101785187B/zh not_active Expired - Fee Related
- 2008-04-30 KR KR1020097026341A patent/KR101222793B1/ko not_active IP Right Cessation
- 2008-04-30 JP JP2010509331A patent/JP5261777B2/ja not_active Expired - Fee Related
- 2008-04-30 EP EP08767451A patent/EP2156558A4/en not_active Withdrawn
- 2008-05-14 TW TW097117729A patent/TWI369846B/zh not_active IP Right Cessation
-
2010
- 2010-09-22 US US12/924,164 patent/US7994827B2/en not_active Expired - Fee Related
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2013
- 2013-08-26 HK HK13109921.0A patent/HK1182842A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2156558A1 (en) | 2010-02-24 |
KR20100029209A (ko) | 2010-03-16 |
WO2008153631A1 (en) | 2008-12-18 |
US20080290911A1 (en) | 2008-11-27 |
JP2010528575A (ja) | 2010-08-19 |
EP2156558A4 (en) | 2012-04-11 |
US7994827B2 (en) | 2011-08-09 |
CN103152022B (zh) | 2016-03-09 |
TW200903969A (en) | 2009-01-16 |
US20110018593A1 (en) | 2011-01-27 |
CN101785187A (zh) | 2010-07-21 |
CN103152022A (zh) | 2013-06-12 |
TWI369846B (en) | 2012-08-01 |
CN101785187B (zh) | 2013-02-27 |
JP5261777B2 (ja) | 2013-08-14 |
US7812647B2 (en) | 2010-10-12 |
KR101222793B1 (ko) | 2013-01-15 |
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PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20210503 |